NATCORE TECHNOLOGY INC.
Red Bank, NJ US
|NATCORE TECHNOLOGY INC. Patent applications|
|Patent application number||Title||Published|
|20160020343||LASER-TRANSFERRED IBC SOLAR CELLS - A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized to ablate, transfer material, and/or laser-dope or laser fire contacts. Laser ablation can be utilized to remove and pattern openings in a passivated or emitter layer. Laser transferring may then be utilized to transfer dopant and/or contact materials to the patterned openings, thereby forming an interdigitated finger pattern. The laser processing system may also be utilized to plate a conductive material on top of the transferred dopant or contact materials.||01-21-2016|
|20150357506||EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON - In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.||12-10-2015|
|20150056818||SYSTEM AND METHOD FOR BLACK SILICON ETCHING UTILIZING THIN FLUID LAYERS - Systems and methods for etching the surface of a substrate may utilize a thin layer of fluid to etch a substrate for improved anti-reflective properties. The substrate may be secured with a holding fixture that is capable of positioning the substrate. A fluid comprising an acid and an oxidizer for etching may be prepared, which may optionally include a metal catalyst. An amount of fluid necessary to form a thin layer contacting the surface of the substrate to be etched may be dispensed. The fluid may be spread into the thin layer utilizing a tray that the substrate is dipped into, a plate that is placed near the surface of the substrate to be etched, or a spray or coating device.||02-26-2015|
|20140322906||Method for Patterned Doping of a Semiconductor - A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of the barrier layer is defined by the polymeric material. The method further comprises removing the polymeric material, and doping the substrate. The barrier layer substantially prevents or reduces doping of the substrate to allow patterned doping regions to be formed on the substrate. The method can be repeated to allow additional doping regions to be formed on the substrate.||10-30-2014|
|20140322858||Solar Cells with Patterned Antireflective Surfaces - Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.||10-30-2014|
|20140199857||Method of Controlling Silicon Oxide Film Thickness - A deposition process for coating a substrate with films of varying thickness on a substrate can be achieve. The thickness of the film deposition can be controlled by the separation between the substrate and a curtain. Different separation distances between the substrate and curtain in the same chemical bath will result in different film thicknesses depositing on the substrate.||07-17-2014|
|20120252228||METHOD OF CONTROLLING SILICON OXIDE FILM THICKNESS - A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain.||10-04-2012|
|20120214319||METHOD OF IMPROVING THE PASSIVATION EFFECT OF FILMS ON A SUBSTRATE - A film deposited on substrate may originally has a high surface recombination velocity (SRV). In order to suppress the SRV and increase the minority carrier lifetime, the substrate may be treated annealing at a high temperature in gas ambient containing O||08-23-2012|
|20120207932||SYSTEMS AND METHODS FOR RAPID LIQUID PHASE DEPOSITION OF FILMS - A rapid liquid phase deposition (LPD) process of coating a substrate provides improved deposition rates. The LPD process may include the following steps: incubation of acids with corresponding oxides, sulfide, or selenide for a predetermined period of time; removing the undissolved oxides, sulfide, or selenide; liquid phase deposition of the oxide, sulfide, or selenide film or coating at an elevated temperature; and removing the substrate from the growth solution. Further, the growth solution can be prepared for re-use by cooling to a desired temperature and adding extra oxides, sulfides, or selenides.||08-16-2012|
|20120119162||Coated Fullerenes, Compositions And Dielectrics Made Therefrom - The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics, and/or inorganic oxides. A coated fullerene interconnect device where at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.||05-17-2012|
Patent applications by NATCORE TECHNOLOGY INC.