| 20090127535 | PHASE CHANGE MEMORY ELEMENT AND METHOD FOR FABRICATING THE SAME - A phase change memory device is disclosed, including a substrate. The phase change memory also includes a bottom electrode. A conductive structure with a cavity is provided to electrically contact the bottom electrode, wherein the conductive structure includes sidewalls with different thicknesses. A phase change spacer is formed to cross the sidewalls with different thicknesses. A top electrode is electrically contacted to the phase change spacer. | 05-21-2009 |
