NANTONG FUJITSU MICROELECTRONICS CO., LTD.
|NANTONG FUJITSU MICROELECTRONICS CO., LTD. Patent applications|
|Patent application number||Title||Published|
|20140124929||SEMICONDUCTOR DEVICE AND FABRICATION METHOD - Semiconductor devices and methods are provided. The semiconductor device can include a semiconductor substrate, a plurality of solder pads disposed on the semiconductor substrate, a first insulating layer disposed over the semiconductor substrate, a columnar electrode disposed over the solder pad, and a solder ball disposed on the columnar electrode. The first insulating layer can include a first opening to expose a solder pad of the plurality of solder pads. The columnar electrode can include a bulk material and a through hole in the bulk material. The through hole can expose at least a surface portion of the solder pad. The solder ball can include a convex metal head on a top surface of the bulk material of the columnar electrode, and a filling part filled in the through hole.||05-08-2014|
|20140124928||SEMICONDUCTOR PACKAGING STRUCTURE AND METHOD FOR FORMING THE SAME - Various embodiments provide semiconductor packaging structures and methods for forming the same. In an exemplary method, a chip having a metal interconnect structure thereon can be provided. An insulating layer can be formed on the chip to expose the metal interconnect structure. A columnar electrode can be formed on the metal interconnect structure. A portion of the metal interconnect structure surrounding a bottom of the columnar electrode can be exposed. A diffusion barrier layer can be formed on sidewalls and a top surface of the columnar electrode, and on the exposed portion of the metal interconnect structure surrounding the bottom of the columnar electrode. A solder ball can then be formed on the diffusion barrier layer. The solder ball can wrap at least the sidewalls and the top surface of the columnar electrode.||05-08-2014|
|20140124927||SEMICONDUCTOR IC PACKAGING METHODS AND STRUCTURES - An IC packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a metal pad and an insulating layer and the insulating layer has an opening to expose the meal pad. The method also includes forming an under-the-ball meal electrode on the exposed metal pad. The under-the-ball metal electrode has an electrode body and an electrode tail, the electrode body is located at a bottom portion of the under-the-ball metal electrode and is in contact with the metal pad, and the electrode tail is located at a top portion of the under-the-ball meal electrode. Further, the method includes forming a solder ball on the under-the-ball metal electrode.||05-08-2014|
|20140124914||SEMICONDUCTOR PACKAGING STRUCTURE AND METHOD - A semiconductor packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a first surface and a second surface, and an electroplating seed layer on the first surface of the semiconductor substrate. The method also includes forming a plurality of columnar electrodes over the electroplating seed layer, where the columnar electrodes include first columnar electrodes and second columnar electrodes. Further, the method includes forming a diffusion barrier layer over the first columnar electrodes and the second columnar electrodes, forming a plurality of first solder balls over the diffusion barrier layer on the first columnar electrodes. The method also includes providing a packaging substrate having solder terminals corresponding to the first solder balls, and mounting the semiconductor substrate onto the packaging substrate in a flipped position, such that the first solder balls are connected with the solder terminals.||05-08-2014|
|20130320535||THREE-DIMENSIONAL SYSTEM-LEVEL PACKAGING METHODS AND STRUCTURES - A 3D system-level packaging method includes providing a packaging substrate, forming a glue layer on the substrate, and attaching a first chip layer at an opposite side of a functional surface of the first chip layer on the packaging substrate through the glue layer. The method also includes forming a first sealant layer on the packaging substrate at a same side attached with the first chip layer and exposing bonding pads of the first chip layer. The method also includes forming first vias in the first sealant layer, forming first vertical metal wiring in the first vias, and forming a first horizontal wiring layer on the sealant layer interconnecting the first chip layer and the first vertical metal wiring. Further, the method includes forming a plurality of package layers on the first sealant layer, and each of the plurality of package layers includes a chip layer, a sealant layer covering the chip layer, and vertical metal wiring and a horizontal wiring layer interconnecting adjacent package layers.||12-05-2013|
|20130302947||PACKAGING METHOD - The present invention relates to a packaging method including the steps: a cementing layer is formed on a carrier board; the functional sides of chips and passive devices are attached to the cementing layer; a sealing material layer is formed on the side of the carrier board to which the chips and the passive devices are attached, and packaging and curing are performed; and the carrier board and the cementing layer are removed. Compared to the prior art, the system-level fan-out wafer packaging method claimed by the present invention first integrates chips and passive devices and then packages the chips and the passive devices together, thereby forming a final packaged product having not single-chip functionality but integrated-system functionality. Compared to current system-level packaging, highly integrated wafer-level packaging reduces such interfering factors as system-internal electric resistance and inductance, and accommodates the growing demand for lighter, thinner, shorter, and smaller semiconductor packaging.||11-14-2013|
|20130301228||PACKAGING STRUCTURE - The present invention relates a packaging structure including: a carrier board and a cementing layer on the surface of the carrier board; chips and passive devices having functional side thereof attached to the cementing layer; and a sealing material layer for packaging and curing, the sealing material being formed on the carrier board on the side attached to the chips and the passive devices. The present invention integrates chips and passive devices and then packages the chips and the passive devices together, and is therefore a packaged product having not single-chip functionality but integrated-system functionality. The present invention is highly integrated, reduces interfering factors such as system-internal electric resistance and inductance, and accommodates growing demand for lighter, thinner, shorter, and smaller semiconductor packaging.||11-14-2013|
|20130280904||METHOD FOR CHIP PACKAGING - Provided is a method for chip packaging, including the steps of: providing a semi-packaged wafer which has a cutting trail and a metal bonding pad of the chip; forming a first protective layer on the cutting trail; forming on the metal bonding pad a sub-ball metal electrode; forming a solder ball on the sub-ball metal electrode; dicing the wafer along the cutting trail. The first protective layer according to the present invention can prevent the metal in the cutting trail from being separated by electroplating, and protect the lateral sides of a discrete chip after cutting. The process flow thereof is simple, and enhances the efficiency of the packaging as well as its yield.||10-24-2013|
Patent applications by NANTONG FUJITSU MICROELECTRONICS CO., LTD.