NANTERO, INC. Patent applications |
Patent application number | Title | Published |
20150086771 | SCALABLE NANOTUBE FABRICS AND METHODS FOR MAKING SAME - The present disclosure provides scalable nanotube fabrics and methods for controlling or otherwise adjusting the nanotube length distribution of a nanotube application solution in order to realize scalable nanotube fabrics. In one aspect of the present disclosure, one or more filtering operations are used to remove relatively long nanotube elements from a nanotube solution until nanotube length distribution of the nanotube solution conforms to a preselected or desired nanotube length distribution profile. In another aspect of the present disclosure, a sono-chemical cutting process is used to break up relatively long nanotube elements within a nanotube application solution into relatively short nanotube elements to realize a pre-selected or desired nanotube length distribution profile. | 03-26-2015 |
20140329430 | Low Defect Nanotube Application Solutions and Fabrics and Methods for Making Same - The present disclosure provides methods for removing defects nanotube application solutions and providing low defect, highly uniform nanotube fabrics. In one aspect, a degassing process is performed on a suspension of nanotubes to remove air bubbles present in the solution. In another aspect, a continuous flow centrifugation (CFC) process is used to remove small scale defects from the solution. In another aspect, a depth filter is used to remove large scale defects from the solution. According to the present disclosure, these three methods can be used alone or combined to realize a low defect nanotube application solutions and fabrics. | 11-06-2014 |
20140166959 | CARBON BASED NONVOLATILE CROSS POINT MEMORY INCORPORATING CARBON BASED DIODE SELECT DEVICES AND MOSFET SELECT DEVICES FOR MEMORY AND LOGIC APPLICATIONS - The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers. | 06-19-2014 |
20140045316 | SWITCHING MATERIALS COMPRISING MIXED NANOSCOPIC PARTICLES AND CARBON NANOTUBES AND METHODS OF MAKING AND USING THE SAME - An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed. | 02-13-2014 |
20140001433 | METHODS FOR PASSIVATING A CARBONIC NANOLAYER | 01-02-2014 |
20130243954 | NANOTUBE SOLUTIONS WITH HIGH CONCENTRATION AND LOW CONTAMINATION AND METHODS FOR PURIFIYING NANOTUBE SOLUTIONS - Solutions of carbon nanotubes and methods for purifying the solutions are provided. The methods include mixing, for example, at least one complexing agents, at least one ionic species, and/or at least one buffer oxide etch (BOE) with a liquid medium containing carbon nanotubes and different types of contaminants, such as metal impurities, amorphous carbon, and/or silica particles, and performing a filtration process to the liquid medium so as to remove or reduce the contaminants in the liquid medium. As a result, carbon nanotube solutions of low contaminants are produced. In some embodiments, the solutions of this disclosure include a high concentration of carbon nanotubes and are substantially free from metal, amorphous carbon, and/or silica impurities. | 09-19-2013 |
20130224934 | NANOTUBE SOLUTION TREATED WITH MOLECULAR ADDITIVE, NANOTUBE FILM HAVING ENHANCED ADHESION PROPERTY, AND METHODS FOR FORMING THE NANOTUBE SOLUTION AND THE NANOTUBE FILM - The present disclosure provides a nanotube solution being treated with a molecular additive, a nanotube film having enhanced adhesion property due to the treatment of the molecular additive, and methods for forming the nanotube solution and the nanotube film. The nanotube solution includes a liquid medium, nanotubes in the liquid medium, and a molecular additive in the liquid medium, wherein the molecular additive includes molecules that provide source elements for forming a group IV oxide within the nanotube solution. The molecular additive can introduce silicon (Si) and/or germanium (Ge) in the liquid medium, such that nominal silicon and/or germanium concentrations of the nanotube solution ranges from about 5 ppm to about 60 ppm. | 08-29-2013 |
20130181189 | Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same - Inverter circuits and NAND circuits comprising nanotube based FETs and methods of making the same are described. Such circuits can be fabricating using field effect transistors comprising a source, a drain, a channel region, and a gate, wherein the first channel region includes a fabric of semiconducting nanotubes of a given conductivity type. Such FETs can be arranged to provide inverter circuits in either two-dimension or three-dimensional (stacked) layouts. Design equations based upon consideration of the electrical characteristics of the nanotubes are described which permit optimization of circuit design layout based upon constants that are indicative of the current carrying capacity of the nanotube fabrics of different FETs. | 07-18-2013 |
20130134393 | Nanotube Field Effect Devices and Methods of Making Same - Methods of making non-volatile field effect devices and arrays of same. Under one embodiment, a method of making a non-volatile field effect device includes providing a substrate with a field effect device formed therein. The field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. An electromechanically-deflectable, nanotube switching element is formed over the field effect device. Terminals and corresponding interconnect are provided to correspond to each of the source, drain and gate such that the nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal, and such that the others of said source, drain and gate are directly connected to their corresponding terminals. | 05-30-2013 |
20130133718 | Photovoltaic Devices Using Semiconducting Nanotube Layers - Photovoltaic (PV) devices employing layers of semiconducting carbon nanotubes as light absorption elements are disclosed. In one aspect a layer of p-type carbon nanotubes and a layer of n-type carbon nanotubes are used to form a p-n junction PV device. In another aspect a mixed layer of p-type and n-type carbon nanotubes are used to form a bulk hetero-junction PV device. In another aspect a metal such as a low work function metal electrode is formed adjacent to a layer of semiconducting nanotubes to form a Schottky barrier PV device. In another aspect various material deposition techniques well suited to working with nanotube layers are employed to realize a practical metal-insulator-semiconductor (MIS) PV device. In another aspect layers of metallic nanotubes are used to provide flexible electrode elements for PV devices. In another aspect layers of metallic nanotubes are used to provide transparent electrode elements for PV devices. | 05-30-2013 |
20130009109 | Spin-Coatable Liquid for Formation of High Purity Nanotube Films - Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×10 | 01-10-2013 |
20120056149 | METHODS FOR ADJUSTING THE CONDUCTIVITY RANGE OF A NANOTUBE FABRIC LAYER - Methods for adjusting and/or limiting the conductivity range of a nanotube fabric layer are disclosed. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via wet chemistry techniques. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via plasma treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via CVD treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via an inert ion gas implant. | 03-08-2012 |
20110291315 | METHODS FOR ARRANGING NANOSCOPIC ELEMENTS WITHIN NETWORKS, FABRICS, AND FILMS - A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed. | 12-01-2011 |
20110244121 | METHODS FOR ARRANGING NANOTUBE ELEMENTS WITHIN NANOTUBE FABRICS AND FILMS - A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed. | 10-06-2011 |
20110220859 | Two-Terminal Nanotube Devices And Systems And Methods Of Making Same - A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device. | 09-15-2011 |
20110211313 | CARBON NANOTUBES FOR THE SELECTIVE TRANSFER OF HEAT FROM ELECTRONICS - Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the reservoir, the nanotube article including a non-woven fabric of nanotubes in contact with other nanotubes to define a plurality of thermal pathways along the article, the nanotube article having a nanotube density and a shape selected such that the nanotube article is capable of transferring heat from the circuit element to the thermal reservoir. | 09-01-2011 |
20110176359 | CARBON NANOTUBE-BASED NEURAL NETWORKS AND METHODS OF MAKING AND USING SAME - Physical neural networks based nanotechnology include dendrite circuits that comprise non-volatile nanotube switches. A first terminal of the non-volatile nanotube switches is able to receive an electrical signal and a second terminal of the non-volatile nanotube switches is coupled to a common node that sums any electrical signals at the first terminals of the nanotube switches. The neural networks further includes transfer circuits to propagate the electrical signal, synapse circuits, and axon circuits. | 07-21-2011 |
20110163290 | METHODS FOR PASSIVATING A CARBONIC NANOLAYER - Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nano-scopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer. | 07-07-2011 |
20110096587 | DYNAMIC SENSE CURRENT SUPPLY CIRCUIT AND ASSOCIATED METHOD FOR READING AND CHARACTERIZING A RESISTIVE MEMORY ARRAY - A dynamic sense current supply circuit and an associated method for rapidly characterizing a resistive memory array is disclosed. In one embodiment, the disclosed circuit comprises a first and second dynamically programmable current mirror sub-circuit. Responsive to a bank of control signals, each dynamically programmable current mirror sub-circuit provides a dynamically adjustable current scaling factor. These scaling factors are used to scale a supplied reference current to generate a plurality of sense currents which can be used within a plurality of read operations on a resistive memory array. A digital circuit is also provided to sense and store the result of each read operation. | 04-28-2011 |
20110083319 | METHODS OF MAKING NANOTUBE SWITCHES - Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment. The ESD circuit may be repeatedly programmed between the activated and deactivated states so as to repeatedly activate and deactivate ESD protection of the protected circuit. The nanotube switch provides protection based on the magnitude of the signal on the input pad. | 04-14-2011 |
20110062993 | NANOTUBE-BASED SWITCHING ELEMENTS AND LOGIC CIRCUITS - Nanotube-based switching elements and logic circuits are disclosed. Under one embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function. | 03-17-2011 |
20110057717 | TWO-TERMINAL NANOTUBE DEVICES INCLUDING A NANOTUBE BRIDGE AND METHODS OF MAKING SAME - Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate. Nantoube articles are suspended over the void or form a bottom surface of a void. The nanotube articles are arranged to permanently contact at least a portion of the conductive terminals. An electrical stimulus circuit in communication with the conductive terminals is used to generate and apply selected waveforms to induce a change in resistance of the device between relatively high and low resistance values. Relatively high and relatively low resistance values correspond to states of the device. A single conductive terminal and a interconnect line may be used. The nanotube article may comprise a patterned region of nanotube fabric, having an active region with a relatively high or relatively low resistance value. Methods of making each device are disclosed. | 03-10-2011 |
20110044091 | TWO-TERMINAL NANOTUBE DEVICES AND SYSTEMS AND METHODS OF MAKING SAME - A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device. | 02-24-2011 |
20110038195 | METHOD FOR RESETTING A RESISTIVE CHANGE MEMORY ELEMENT - A method of resetting a resistive change memory element is disclosed. The method comprises performing a series of programming operations—for example, a programming pulse of a predetermined voltage level and pulse width—on a resistive change memory element in order to incrementally increase the resistance of the memory element above some predefined threshold. Prior to each programming operation, the resistive state of the memory element is measured and used to determine the parameters used in that programming operation. If this measured resistance value is above a first threshold value, the memory element is determined to already be in a reset state and no further programming operation is performed. If this measured resistance value is below a second threshold value, this second threshold value being less than the first threshold value, a first set of programming parameters are used within the programming operation. If this initial value is above the second threshold value but below the first threshold value, a second set of programming parameters are used within the programming operation. | 02-17-2011 |
20110034008 | METHOD FOR FORMING A TEXTURED SURFACE ON A SEMICONDUCTOR SUBSTRATE USING A NANOFABRIC LAYER - A method of forming a textured surface on a substrate or material layer within a semiconductor fabrication process. In one aspect of the disclosure, a sacrificial nanofabric layer is deposited over a material layer and an etch process is used to transfer the surface texture of the nanofabric layer downward to the material layer. In another aspect of the disclosure, a thin material layer is deposited over a nanofabric layer such that the surface texture of the nanofabric layer is transferred upward to the material layer. Within both aspects, varying the porosity of nanofabric layer provides a measure of control over the degree of texturization of the material layer. | 02-10-2011 |
20110027497 | ANISOTROPIC NANOTUBE FABRIC LAYERS AND FILMS AND METHODS OF FORMING SAME - Methods for forming anisotropic nanotube fabrics are disclosed. In one aspect, a nanotube application solution is rendered into a nematic state prior to its application over a substrate. In another aspect, a pump and narrow nozzle assembly are employed to realize a flow induced alignment of a plurality of individual nanotube elements as they are deposited onto a substrate element. In another aspect, nanotube adhesion promoter materials are used to form a patterned nanotube application layer, providing narrow channels over which nanotube elements will self align during an application process. Specific dip coating processes which are well suited for aiding in the creation of anisotropic nanotube fabrics are also disclosed. | 02-03-2011 |
20110027491 | ANISOTROPIC NANOTUBE FABRIC LAYERS AND FILMS AND METHODS OF FORMING SAME - Methods for forming anisotropic nanotube fabrics are disclosed. In one aspect, a nanotube application solution is rendered into a nematic state prior to its application over a substrate. In another aspect, a pump and narrow nozzle assembly are employed to realize a flow induced alignment of a plurality of individual nanotube elements as they are deposited onto a substrate element. In another aspect, nanotube adhesion promoter materials are used to form a patterned nanotube application layer, providing narrow channels over which nanotube elements will self align during an application process. Specific dip coating processes which are well suited for aiding in the creation of anisotropic nanotube fabrics are also disclosed. | 02-03-2011 |
20110025577 | MICROSTRIP ANTENNA ELEMENTS AND ARRAYS COMPRISING A SHAPED NANOTUBE FABRIC LAYER AND INTEGRATED TWO TERMINAL NANOTUBE SELECT DEVICES - A nanotube based microstrip antenna element is provided along with arrays of same. The nanotube based microstrip antenna element comprises a dielectric substrate layer sandwiched between a ground plane layer and a conductive nanotube layer, the conductive nanotube layer shaped to form a radiating structure. In more advanced embodiments, the nanotube based microstrip antenna element further includes an integrated two terminal nanotube switch device such as to provide a selectability function to such microstrip antenna elements and reconfigurable arrays of same. Anisotropic nanotube fabric layers are also used to provide substantially transparent microstrip antenna structures which can be deposited over display screens and the like. | 02-03-2011 |
20100327247 | METHOD AND SYSTEM OF USING NANOTUBE FABRICS AS JOULE HEATING ELEMENTS FOR MEMORIES AND OTHER APPLICATIONS - Methods and systems of using nanotube elements as joule heating elements for memories and other applications. Under one aspect, a method includes providing an electrical stimulus, regulated by a drive circuit, through a nanotube element in order to heat an adjacent article. Further, a detection circuit electrically gauges the state of the article. The article heated by the nanotube element is, in preferred embodiments, a phase changing material, hi memory applications, the invention may be used as a small-scale CRAM capable of employing small amounts of current to induce rapid, large temperature changes in a chalcogenide material. Under various embodiments of the disclosed invention, the nanotube element is composed of a non-woven nanotube fabric which is either suspended from supports and positioned adjacent to the phase change material or is disposed on a substrate and in direct contact with the phase change material. A plurality of designs using various geometric orientations of nanotube fabrics, phase change materials, and drive and detection circuitry is disclosed. Additionally, methods of fabricating nanotube heat emitters are disclosed. | 12-30-2010 |
20100283528 | NANOTUBE-ON-GATE FET STRUCTURES AND APPLICATIONS - Under one aspect, non-volatile transistor device includes a source and drain with a channel in between; a gate structure made of a semiconductive or conductive material disposed over an insulator over the channel; a control gate made of a semiconductive or conductive material; and an electromechanically-deflectable nanotube switching element in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. | 11-11-2010 |
20100148277 | ISOLATED METAL PLUG PROCESS FOR USE IN FABRICATING CARBON NANOTUBE MEMORY CELLS - The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers. The memory cell further includes an electrode that overlies the crossbar element such that electrical signals can activate the electrode to attract or repel the crossbar element to set a memory state for the transistor. | 06-17-2010 |
20100147657 | NANOTUBE ESD PROTECTIVE DEVICES AND CORRESPONDING NONVOLATILE AND VOLATILE NANOTUBE SWITCHES - Device design methods for use with non-volatile nanotube switches are disclosed. In a first aspect of the present disclosure, a plurality of nonconductive nanoparticles is adhered to a nanotube element such as to provide an isolation barrier from a control electrode and further provide a switching gap above that element. In a second aspect of the present disclosure, conductive nanoparticles are dispersed and adhered to either a control electrode or to a nanotube element positioned over said electrode element such that the interface area (that is, the area of the nanotube element which comes into contact with the control electrode) is minimized. In a third aspect of the present disclosure, a monolayer network of nonconductive nanotubes is used to provide an isolation barrier between a control electrode and a nanotube element. Voids or spaces in said monolayer network further provides switching gaps. | 06-17-2010 |
20100134141 | NONVOLATILE NANOTUBE PROGRAMMABLE LOGIC DEVICES AND A NONVOLATILE NANOTUBE FIELD PROGRAMMABLE GATE ARRAY USING SAME - Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate. | 06-03-2010 |
20100078723 | NONVOLATILE NANOTUBE PROGRAMMABLE LOGIC DEVICES AND A NONVOLATILE NANOTUBE FIELD PROGRAMMABLE GATE ARRAY USING SAME - Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate. | 04-01-2010 |
20100072459 | NONVOLATILE NANOTUBE PROGRAMMABLE LOGIC DEVICES AND A NONVOLATILE NANOTUBE FIELD PROGRAMMABLE GATE ARRAY USING SAME - Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate. | 03-25-2010 |
20100039138 | NONVOLATILE NANOTUBE PROGRAMMABLE LOGIC DEVICES AND A NONVOLATILE NANOTUBE FIELD PROGRAMMABLE GATE ARRAY USING SAME - Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate. | 02-18-2010 |
20100038625 | NONVOLATILE NANOTUBE PROGRAMMABLE LOGIC DEVICES AND A NONVOLATILE NANOTUBE FIELD PROGRAMMABLE GATE ARRAY USING SAME - Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate. | 02-18-2010 |
20100025659 | NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME - Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain. | 02-04-2010 |
20100022045 | SENSOR PLATFORM USING A NON-HORIZONTALLY ORIENTED NANOTUBE ELEMENT - Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements. | 01-28-2010 |
20100012927 | DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME - Electro-mechanical switches and memory cells using vertically-oriented nanofabric articles and methods of making the same. Under one aspect, a nanotube device includes a substantially horizontal substrate having a vertically oriented feature; and a nanotube film substantially conforming to a horizontal feature of the substrate and also to at least the vertically oriented feature. Under another aspect, an electromechanical device includes a structure having a major horizontal surface and a channel formed therein, the channel having first and second wall electrodes defining at least a portion of first and second vertical walls of the channel; first and second nanotube articles vertically suspended in the channel and in spaced relation to a corresponding first and second wall electrode, and electromechanically deflectable in a horizontal direction toward or away from the corresponding first and second wall electrode in response to electrical stimulation. | 01-21-2010 |
20100012925 | HYBRID CARBON NANOTUBE FET (CNFET)-FET STATIC RAM (SRAM) AND METHOD OF MAKING SAME - Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET. | 01-21-2010 |
20100001267 | NRAM ARRAYS WITH NANOTUBE BLOCKS, NANOTUBE TRACES, AND NANOTUBE PLANES AND METHODS OF MAKING SAME - NRAM arrays with nanotube blocks, traces and planes, and methods of making the same are disclosed. In some embodiments, a nanotube memory array includes a nanotube fabric layer disposed in electrical communication with first and second conductor layers. A memory operation circuit including a circuit for generating and applying a select signal on first and second conductor layers to induce a change in the resistance of the nanotube fabric layer between the first and second conductor layers is provided. At least two adjacent memory cells are formed in at least two selected cross sections of the nanotube fabric and conductor layers such that each memory cell is uniquely addressable and programmable. For each cell, a change in resistance corresponds to a change in an informational state of the memory cell. Some embodiments include bit lines, word lines, and reference lines. In some embodiments, 6F | 01-07-2010 |
20090314530 | METHOD OF ALIGNING NANOTUBES AND WIRES WITH AN ETCHED FEATURE - A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer contacts portions of the side and overlaps a portion of the top of the etched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature. | 12-24-2009 |
20090294754 | NOVEL TECHNIQUES FOR PRECISION PATTERN TRANSFER OF CARBON NANOTUBES FROM PHOTO MASK TO WAFERS - A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer). Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using C1, F plasma) the portions of the hard mask which have been already partially etched away. | 12-03-2009 |
20090283745 | METHODS OF MAKING CARBON NANOTUBE FILMS, LAYERS, FABRICS, RIBBONS, ELEMENTS AND ARTICLES - Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density. | 11-19-2009 |
20090271971 | METHODS OF MAKING NANOTUBE-BASED SWITCHING ELEMENTS AND LOGIC CIRCUITS - Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function. | 11-05-2009 |
20090243102 | METHOD OF ALIGNING DEPOSITED NANOTUBES ONTO AN ETCHED FEATURE USING A SPACER - A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature. | 10-01-2009 |
20090173964 | METHOD OF FORMING A CARBON NANOTUBE-BASED CONTACT TO SEMICONDUCTOR - Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided. | 07-09-2009 |
20090154218 | MEMORY ARRAYS USING NANOTUBE ARTICLES WITH REPROGRAMMABLE RESISTANCE - A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell. | 06-18-2009 |
20090140213 | METHOD OF MAKING AN APPLICATOR LIQUID FOR ELECTRONICS FABRICATION PROCESS - Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A method of making an applicator liquid containing nanotubes for use in an electronics fabrication process includes characterizing an electronic fabrication process according to fabrication compatible solvents and allowable levels of metallic and particle impurities; providing nanotubes that satisfy the allowable impurities criteria for the electronics fabrication process; providing a solvent that meets the fabrication compatible solvents and allowable impurities criteria for the electronic fabrication process; and dispersing the nanotubes into the solvent at a concentration of at least one milligram of nanotubes per liter solvent to form an applicator liquid. | 06-04-2009 |
20090115305 | TRIODES USING NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME - Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications. | 05-07-2009 |
20090087630 | CARBON NANOTUBE FILMS, LAYERS, FABRICS, RIBBONS, ELEMENTS AND ARTICLES - Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. To make a nanofabric, a substrate is provided. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes wherein the non-woven fabric is substantially uniform density. The nanofabrics and articles have characteristics desirable for various electrical systems such as memory circuits and conductive traces and pads. | 04-02-2009 |
20090052246 | NON-VOLATILE SHADOW LATCH USING A NANOTUBE SWITCH - A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device. | 02-26-2009 |
20090045473 | Devices having horizontally-disposed nanofabric articles and methods of making the same - New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. | 02-19-2009 |
20080290423 | NANOTUBE-BASED SWITCHING ELEMENT - Nanotube-based switching elements and logic circuits. Under one aspect, a switching element includes an input node; an output node; a nanotube channel element comprising a ribbon of nanotube fabric; and a control electrode disposed in relation to the nanotube channel element to form an electrically conductive channel between the input node and the output node, wherein the electrically conductive channel at least includes the nanotube channel element. Under another aspect, a switching element includes an input node; an output node; a nanotube channel element comprising at least one electrically conductive nanotube, the nanotube being clamped at both ends by a clamping structure; and a control electrode disposed in relation to the nanotube channel element to form an electrically conductive channel between the input node and the output node, wherein the electrically conductive channel at least includes the nanotube channel element. | 11-27-2008 |
20080280038 | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles - Methods of using thin metal layers to make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate, including one or more thin layers of metal. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density. | 11-13-2008 |
20080231413 | RESISTIVE ELEMENTS USING CARBON NANOTUBES - Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable. | 09-25-2008 |
20080231320 | TRI-STATE CIRCUIT USING NANOTUBE SWITCHING ELEMENTS - Nanotube-based logic circuitry is disclosed. Tri-stating elements add an enable/disable function to the circuitry. The tri-stating elements may be provided by nanotube-based switching devices. In the disabled state, the outputs present a high impedance, i.e., are tri-stated, which state allows interconnection to a common bus or other shared communication lines. In embodiments wherein the components are non-volatile, the inverter state and the control state are maintained in the absence of power. Such an inverter may be used in conjunction with and in the absence of diodes, resistors and transistors or as part of or as a replacement to CMOS, biCMOS, bipolar and other transistor level technologies. | 09-25-2008 |
20080225572 | CIRCUIT ARRAYS HAVING CELLS WITH COMBINATIONS OF TRANSISTORS AND NANOTUBE SWITCHING ELEMENTS - Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements. | 09-18-2008 |
20080224126 | Spin-coatable liquid for formation of high purity nanotube films - Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×10 | 09-18-2008 |
20080212361 | NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME - Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell. | 09-04-2008 |