NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA Patent applications |
Patent application number | Title | Published |
20150368832 | GaN SUBSTRATE, AND METHOD FOR MANUFACTURING GaN SUBSTRATE - Provided is a technology capable of simply manufacturing a GaN substrate, which is constituted by a GaN crystal having a substantially uniform dislocation density distribution, without using a complicated process, at low cost and at a high yield ratio. | 12-24-2015 |
20150076662 | COMPOSITE SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR ELEMENT MANUFACTURING METHOD, COMPOSITE SUBSTRATE, AND SEMICONDUCTOR ELEMENT - Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured. | 03-19-2015 |
20140217458 | METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT, AND LIGHT-EMITTING ELEMENT - Provided are a method of manufacturing a light-emitting element by which a light-emitting element ( | 08-07-2014 |
20130022773 | SINGLE-CRYSTAL SUBSTRATE,SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM,CRYSTALLINE FILM,METHOD FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM,METHOD FOR PRODUCING CRYSTLLINE SUBSTRATE,AND METHOD FOR PRODUCING ELEMENT - Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate. | 01-24-2013 |
20100065986 | NANOIMPRINT METHOD AND APPARATUS - There is provided a nanoimprint apparatus. The nanoimprint apparatus transfers a pattern formed on a surface of a mold to a transfer layer which is formed partially or entirely on a side surface of a substantially cylindrical or columnar substrate. The nanoimprint apparatus includes: a first jig which is in contact with the substrate | 03-18-2010 |
20090199644 | VIBRATION ACTUATOR - [Object] A vibration actuator having a simple small-sized structure capable of obtaining vibration enough to sense without use of suspension or the like is provided. | 08-13-2009 |