| MoSys, Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120068339 | VLSI Package for High Performance Integrated Circuit - A packaged integrated circuit is presented for placement on a printed circuit board (PCB) layer providing power lines and data access channels. The packaged integrated circuit includes; a package substrate having data channels and power lines; a circuit substrate having functional components, wherein (a) the power lines and the data channels in the package substrate are coupled to the functional components of the substrate by conducting bumps, (b) the conducting balls coupling the data access channels in the PCB to the data channels in the package substrate are located along the edges of the package substrate; and (c) the conducting balls coupling the power lines in the PCB and the power lines in the package substrate are located in an interior portion of the package substrate. Also, an integrated circuit may further include a circuit substrate having active components, including a SerDes circuit at a center portion of the substrate. | 03-22-2012 |
| 20120056257 | Non-Volatile Memory System with Modified Memory Cells - A method and system in which an embedded memory is fabricated in accordance with a conventional logic process includes one or more non-volatile memory cells, each having an access transistor and a capacitor, which share a common floating gate electrode. The coupling capacitor is provided with a dielectric layer having a thickness greater than the dielectric layer of the access transistor. Regions under the capacitor are implanted with a high dose implant to form an electrically shorted doped area in the channel region of the capacitor. The high dose implant improves the coupling ratio of the capacitor and enhances the uniformity of the capacitor's oxide layer. | 03-08-2012 |
| 20120047260 | Data Synchronization For Circuit Resources Without Using A Resource Buffer - A resource synchronizer synchronizes transmission of data to a SerDes of a device so that the SerDes is capable of providing the data to a resource of the device without buffering the data between the SerDes and the resource. | 02-23-2012 |
| 20120025397 | Semiconductor Chip Layout - A chip layout for a high speed semiconductor device is disclosed. The chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. A serial interface is centrally located to reduce latency, power and propagation delays. Stacked die that contain one or more devices with the chip layout are characterized by having improved latency, bandwidth, power consumption, and propagation delays. | 02-02-2012 |
| 20120025347 | Method of forming a MIM capacitor - An embedded memory system includes an array of dynamic random access memory (DRAM) cells, on the same substrate as an array of logic transistors. Each DRAM cell includes an access transistor and a capacitor structure. The capacitor structure is fabricated by forming a metal-insulator-metal capacitor in a dielectric layer. The eDRAM system includes fewer metal layers in the logic area than in the memory area | 02-02-2012 |
| 20120025285 | SYSTEM WITH LOGIC AND EMBEDDED MIM CAPACITOR - An embedded memory system includes an array of random access memory (RAM) cells, on the same substrate as an array of logic transistors. Each RAM cell includes an access transistor and a capacitor structure. The capacitor structure is fabricated by forming a metal-insulator-metal capacitor in a dielectric layer. The embedded RAM system includes fewer metal layers in the logic region than in the memory region | 02-02-2012 |
| 20110234282 | Method And Circuit For Testing And Characterizing High Speed Signals Using An ON-Chip Oscilloscope - A method and structure for characterizing signals used to operate high speed circuitry on an integrated circuit chip. Signals to be characterized, such as column select signals, sense amplifier enable signals and word line signals, are generated on the chip. Each of these signals has an identical corresponding pattern during successive cycles of an input clock signal. These signals are sampled on the chip with successively delayed versions of the input clock signal, thereby generating a plurality of data samples that represent the patterns of the signals over a cycle of the input clock signal. The data samples are stored in a memory block on the chip, and are subsequently serialized and transferred to a location external to the chip. | 09-29-2011 |
| 20110216596 | Reliability Protection for Non-Volatile Memories - A non-volatile memory cell having enhanced protection against mobile ions. The electric field within the memory cell is controlled in a manner that minimizes migration of mobile ions toward the floating gate. Each conductive layer in the memory cell is biased to reduce the flow of mobile ions toward the floating gate. The memory cell is preferably manufactured using a conventional logic process. | 09-08-2011 |
| 20110209002 | Programmable Test Engine (PCDTE) For Emerging Memory Technologies - A programmable characterization-debug-test engine (PCDTE) on an integrated circuit chip. The PCDTE includes an instruction memory that receives and stores instructions provided on a chip interface, and a configuration memory that receives and stores configuration values provided on the chip interface. The PCDTE also includes a controller that configures a plurality of address counters and data registers in response to the configuration values. The controller also executes the instructions, wherein read/write addresses and write data are retrieved from the counters in response to the instructions. The retrieved read/write addresses and write data are used to access a memory under test. Multiple ports of the memory under test may be simultaneously accessed. Multiple instructions may be linked. The instructions may specify special counting functions within the counters and/or specify integrated (linked) counters. The PCDTE may transmit information off of the chip to exercise transmit/receive circuitry of the chip. | 08-25-2011 |
| 20110191619 | Reducing Latency in Serializer-Deserializer Links - A system for increasing the efficiency of data transfer through a serializer-deserializer (SerDes) link, and for reducing data latency caused by differences between arrival times of the data on the SerDes link and the system clock with which the device operates. | 08-04-2011 |
| 20110191564 | Hierarchical Organization Of Large Memory Blocks - A multi-bank memory system includes one or more levels of logical memory hierarchy to increase the available random cyclic transaction rate of the memory system. The memory system includes a plurality of multi-bank partitions, each having a corresponding partition interface. Each partition interface accesses the corresponding multi-bank partition at a first frequency. A global interface may access the partition interfaces at a second frequency, which is equal to the first frequency times the number of partition interfaces. Alternately, a plurality of cluster interfaces may access corresponding groups of the partition interfaces, wherein each cluster interface accesses the corresponding group of partition interfaces at a second frequency that is faster than the first frequency. A global interface accesses the cluster interfaces at a third frequency that is greater than the second frequency. | 08-04-2011 |
| 20110191548 | High Utilization Multi-Partitioned Serial Memory - A memory device that includes an input interface that receives instructions and input data on a first plurality of serial links. The instructions and input data are deserialized on the memory device, and are provided to a memory controller. The memory controller initiates accesses to a memory core in response to the received instructions. The memory core includes a plurality of memory partitions, which are accessed in a cyclic and overlapping manner. This allows each memory partition to operate at a slower frequency than the serial links, while properly servicing the received instructions. Accesses to the memory device are performed in a synchronous manner, wherein each access exhibits a known fixed latency. | 08-04-2011 |
| 20110188335 | Hierarchical Multi-Bank Multi-Port Memory Organization - A memory system includes multiple (N) memory banks and multiple (M) ports, wherein N is greater than or equal to M. Each of the memory banks is coupled to each of the ports. Access requests are transmitted simultaneously on each of the ports. However, each of the simultaneous access requests specifies a different memory bank. Each memory bank monitors the access requests on the ports, and determines whether any of the access requests specify the memory bank. Upon determining that an access request specifies the memory bank, the memory bank performs an access to an array of single-port memory cells. Simultaneous accesses are performed in multiple memory banks, providing a bandwidth equal to the bandwidth of one memory bank times the number of ports. An additional level of hierarchy may be provided, which allows further multiplication of the number of simultaneously accessed ports, with minimal area overhead. | 08-04-2011 |
| 20110149673 | Three State Word Line Driver ForA DRAM Memory Device - A memory bank includes an array of memory cells, word lines for accessing the memory cells, and word line drivers coupled to the word lines. When the memory bank is being accessed, the word line drivers are coupled to receive a first supply voltage, which is applied to the non-selected word lines of the memory bank. The first supply voltage turns off access transistors of the memory cells coupled to the non-selected word lines. When the memory bank is not being accessed, the word line drivers are coupled to receive a second supply voltage, which is applied to each of the word lines of the memory bank. The second supply voltage turns off the access transistors of the memory cells coupled of the word lines. The first and second supply voltages are selected such that the first supply voltage turns off the access transistors harder than the second supply voltage. | 06-23-2011 |
| 20110141812 | Method and Apparatus for Restoring Data in a Non-Volatile Memory - A method and apparatus for selectively restoring data in a non-volatile memory array based on failure type. Weakened data and erroneous data are identified by performing two readings of a specific memory section. Alternatively, an error correction code is used after a first reading of data to identify erroneous data. The manner in which data is restored will depend on whether the data changed because of an erase failure or a program failure. If only a program failure occurred then the data will be reprogrammed without an intervening erase step. If the data experienced an erase failure, then the data will be erased prior to being programmed with correct data. | 06-16-2011 |
| 20110085398 | Multiple Cycle Memory Write Completion - A memory system that reduces the memory cycle time of a memory cell by performing an incomplete write operation. The voltage on a storage node of the memory cell does not reach a full supply voltage during the incomplete write operation. The incomplete write operation is subsequently completed by one or more additional accesses, wherein the voltage on the storage node is pulled to a full supply voltage. The incomplete write operation may be completed by: subsequently writing the same data to the memory cell during an idle cycle; subsequently writing data to other memory cells in the same row as the memory cell; subsequently reading data from the row that includes the memory cell; or refreshing the row that includes the memory cell during an idle cycle. One or more idle cycles may be forced to cause the incomplete write operation to be completed in a timely manner. | 04-14-2011 |
| 20100275170 | Porting Analog Circuit Designs - A computer-based method of converting an analog integrated circuit design from a source technology to a target technology, by providing a computer readable source schematic file and a computer readable source layout file for the analog integrated circuit design in the source technology, providing a computer readable technology transfer file that includes conversion tables between properties of the source technology and properties of the target technology, converting the source schematic file in the source technology to a target schematic file in the target technology with the computer using the technology transfer file, and converting the source layout file in the source technology to a target layout file in the target technology with the computer using the technology transfer file. | 10-28-2010 |
| 20100271094 | Signal Alignment System - Through the use of a multi-step sweep, the present invention is capable of increasing the speed and improving the error resistance of a signal alignment. In a specific embodiment of the invention, a method for the signal alignment of a target signal and an adjustable signal is disclosed. The target signal is sampled using three or more phase shifted versions of the adjustable signal to obtain a group of target signal state values. Next, through reference to the group of target signal state values it is determined that an edge of the target signal lies between a first phase shifted version and a second consecutive phase shifted version. In response, the first phase shifted version is selected as the starting point for a second sweep. During the second sweep, the phase of the first phase shifted version is sequentially adjusted in relatively small incremental steps to minimize the phase difference relative to the target signal. | 10-28-2010 |
| 20100235590 | Multi-bank Multi-port Architecture - A memory system including a plurality of ports and a memory core having a plurality of memory banks. Access requests received at the ports are broadcast to the memory banks. Multiple memory banks may be concurrently accessed in response to access requests received on different ports. A memory controller provides the access requests to the memory system, and ensures that a single memory bank is not concurrently accessed by different ports. All access requests are processed with the same latency. If the memory banks include memory cells that must be periodically refreshed, then the memory controller also provides refresh requests to the memory banks. Because multiple memory banks may be concurrently accessed in response to access requests provided on different ports, the memory banks can operate at a lower frequency than the ports. | 09-16-2010 |
| 20100208530 | Two Bits Per Cell Non-Volatile Memory Architecture - A memory circuit for holding a single binary value. A first bit cell holds one of a logical high value and a logical low value, and a second bit cell also holds one of a logical high value and a logical low value. Circuitry is provided for placing a logical high value in the first bit cell when the binary value in the memory circuit is to be a logical high value, and circuitry is provided for placing a logical high value in the second bit cell when the binary value in the memory circuit is to be a logical low value. In this manner, a logical high value exists within the memory circuit, whether the single binary value within the memory circuit is a logical high value or a logical low value. The difference between the two values of the binary value is which of the two bit cells holds the logical high value. Thus, this memory circuit can be sensed without the use of a sense amplifier. | 08-19-2010 |
| 20100205504 | Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process - A method for selectively refreshing data in a nonvolatile memory array based on failure type detected by an error correction code. If the page is determined to be error-free, no refresh operation takes place. Otherwise, if single-error words on a page contain erased and programmed bit errors, then a refresh operation, consisting of an erase and program, takes place. The erase operation is skipped if single-error words on a page solely contain a program failure. | 08-12-2010 |
| 20100202203 | Data restoration method for a non-volatile memory - A method and apparatus for selectively restoring data in a non-volatile memory array based on failure type. Weakened data and erroneous data are identified by performing two readings of a specific memory section. Alternatively, an error correction code is used after a first reading of data to identify erroneous data. The manner in which data is restored will depend on whether the data changed because of an erase failure or a program failure. If only a program failure occurred then the data will be reprogrammed without an intervening erase step. If the data experienced an erase failure, then the data will be erased prior to being programmed with correct data. | 08-12-2010 |
| 20100140680 | Double Polysilicon Process for Non-Volatile Memory - A process flow for creating a non-volatile memory cell, the process flow including the steps of forming a doped well in a semiconducting portion of a substrate, forming a gate dielectric layer on top of the substrate, depositing a first polysilicon layer on top of the gate dielectric layer, patterning and etching the first polysilicon layer, selectively oxidizing the first polysilicon layer, implanting lightly-doped source/drain regions into the well, forming sidewall spacers adjacent the first polysilicon layer, implanting source/drain regions into the well, thereby forming a channel area, depositing a dielectric layer on top of the first polysilicon layer, depositing a second polysilicon layer on top of the dielectric layer, forming a masking layer on the second polysilicon layer, and etching both the second polysilicon layer and the dielectric layer using the masking layer. | 06-10-2010 |
| 20100120213 | Embedded DRAM with multiple gate oxide thicknesses - A method of forming an embedded DRAM cell having multiple-thickness gate dielectrics. An oxidation-enhancing dopant is selectively implanted into a well region in an area that is exposed by a first mask. A thermal oxidation step simultaneously produces the field dielectric for two distinct devices each having a different oxide thickness. The method is applicable to quad-density DRAM cells using fewer oxidation steps. The method is also applicable to planar DRAM cells, and does not require increasing the number of masks during the fabrication of planar DRAM cells. | 05-13-2010 |
| 20100118596 | Embedded DRAM with bias-independent capacitance - An embedded memory system that includes DRAM cells and logic transistors. The capacitor of the embedded memory responds to a positive bias voltage of ½ Vdd. The wordline driver of a p-channel access transistor applying the positive power supply voltage when the p-channel access FET is not being accessed and a voltage lower than the threshold voltage of the p-channel access FET is being accessed. For DRAM cells containing an n-channel access FET, the wordline driver applies either a negative voltage or the ground voltage to the n-channel access FET when the DRAM cell is not being accessed. A second voltage composed of Vdd and a boosted voltage is applied to the n-channel FET when the DRAM cell is being accessed. | 05-13-2010 |
| 20080209303 | Error Detection/Correction Method - A method for error detection and correction (EDC) includes: generating a complete EDC code in response to a data packet; distributing the complete EDC code among the data packet to create a plurality of bytes, each including a data portion from the data packet and an EDC code portion from the complete EDC code; storing the bytes in a memory module; retrieving the bytes from the memory module; forwarding the data portions of the bytes retrieved from the memory module to a requesting device; providing the data portions of the bytes retrieved from the memory module to an EDC functional block; providing the EDC code portions of the bytes retrieved from the memory module to the EDC functional block; and performing error checking and correction in the EDC functional block upon receiving the complete EDC code from the provided EDC code portions. | 08-28-2008 |
