| MOSAID Technologies Incorporated Patent applications |
| Patent application number | Title | Published |
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| 20120137070 | METHOD AND APPARATUS FOR PROVIDING A PACKET BUFFER RANDOM ACCESS MEMORY - The present invention generally provides a packet buffer random access memory (PBRAM) device including a memory array, a plurality of input ports, and a plurality of serial registers associated with the input ports. The plurality of input ports permit multiple devices to concurrently access the memory in a non-blocking manner. The serial registers enable receiving data from the input ports and concurrently packet data to the memory array. The memory performs all management of network data queues so that all port requests can be satisfied within the real-time constraints of network packet switching. | 05-31-2012 |
| 20120134194 | BRIDGE DEVICE ARCHITECTURE FOR CONNECTING DISCRETE MEMORY DEVICES TO A SYSTEM - A bridge device architecture for connecting discrete memory devices. The bridge device is used in conjunction with a composite memory device including at least one discrete memory device. The bridge device includes a local control interface for connecting to the at least one discrete memory device, a local input/output interface for connecting to the at least one discrete memory device, and a global input/output interface. The global input/output interface receives and provides global memory control signals and also receives and provides write data to and read data from the at least one discrete memory device. | 05-31-2012 |
| 20120127798 | METHOD AND APPARATUS FOR SHARING INTERNAL POWER SUPPLIES IN INTEGRATED CIRCUIT DEVICES - A method, system and apparatus for sharing internal power supplies in integrated circuit devices is described. A multiple device integrated circuit | 05-24-2012 |
| 20120120549 | Mixed Composition Interface Layer and Method of Forming - An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. | 05-17-2012 |
| 20120118938 | WIRING METHOD AND DEVICE - To permanently apply lead terminals to corresponding electrodes of electronic or electro-optic components, the following steps are carried out: a. providing a frame including at least one tensioned wire, b. providing a holding jig including at least one seat in which a respective one of the components can be removably and temporarily retained, c. applying the components to the seats with the respective electrodes aligned along a respective longitudinal direction; in this way a row of aligned components is obtained, each component having a corresponding electrode aligned to the subsequent one in the row, d. applying the holding jig to the frame and orienting the same so that the longitudinal direction corresponds to the direction of the tensioned wire, the tensioned wire being thereby brought substantially in contact with (all) the electrode(s) aligned to each other on a corresponding row of components, e. electrically and mechanically bonding the tensioned wire to the corresponding electrodes; in this way all components are simultaneously bonded to the wire, and f. cutting the wire to separate the components from each other thereby forming a respective lead terminal for each electrode. | 05-17-2012 |
| 20120113721 | FLEXIBLE MEMORY OPERATIONS IN NAND FLASH DEVICES - A flash memory device having at least two bank, where the each bank has an independently configurable page size and core controller. The core controller is local to each bank, and governs memory access operations for the bank that include read, program and erase operations. Each core controller controls timing and activation of row circuits, column circuits, voltage generators, and local input/output path circuits for a corresponding memory access operation of the bank. Concurrent operations are executable in multiple banks to improve performance. Each bank has a page size that is configurable with page size configuration data such that only selected wordlines are activated in response to address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. | 05-10-2012 |
| 20120106891 | METHOD AND DEVICE FOR TUNABLE OPTICAL FILTERING - An optical device includes an optical splitter having a resonant structure including at least a resonator, the optical splitter being adapted to receive at an input port a WDM optical signal and to output at first and second output ports, respectively, a first and a second portion of the optical signal, the second portion including the channels spaced by an integer multiple of the WDM frequency spacing; an optical combiner adapted to receive at first and second input ports, respectively, the first and the second portions and adapted to output them at an output port; a first optical path optically connecting the first output port to the first input port; a second optical path optically connecting the second output port to the second input port; and an optical filter optically coupled to the second optical path, wherein the optical combiner includes at least a resonator. | 05-03-2012 |
| 20120098581 | CHARGE PUMP FOR PLL/DLL - A charge pump for use in a Phase Locked Loop/Delay Locked Loop minimizes static phase error through the use of an operational amplifier. The operational amplifier also mitigates the effects of low power supply voltage. | 04-26-2012 |
| 20120096292 | METHOD, SYSTEM AND APPARATUS FOR MULTI-LEVEL PROCESSING - A Multi-Level Processor | 04-19-2012 |
| 20120087193 | FLASH MULTI-LEVEL THRESHOLD DISTRIBUTION SCHEME - A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages. | 04-12-2012 |
| 20120087182 | PHASE-CHANGE MEMORY WITH MULTIPLE POLARITY BITS HAVING ENHANCED ENDURANCE AND ERROR TOLERANCE - A Phase-Change Memory (PCM) apparatus including a data field for storing a data bits representing a data value or an inversion of the data value and a polarity field for storing a plurality of polarity bits for indicating that the data bits stored in the data field represent the data value or the inversion of the data value. In one embodiment an odd number of set polarity bits indicates that the data bits represent the inversion of the data value and an even number of set polarity bits indicates that the data bits represent the data value. The PCM apparatus has enhanced endurance and improved error tolerance. | 04-12-2012 |
| 20120069693 | DYNAMIC RANDOM ACCESS MEMORY AND BOOSTED VOLTAGE PRODUCER THEREFOR - A dynamic random access memory (DRAM) is selectively operable in a sleep mode and another mode. The DRAM has data storage cells that are refreshed in the refresh mode. A boosted voltage is provided for the operation of the DRAM. A boosted voltage provider includes a group of charge pump circuits that are selectively activated by a pump control circuit based on a refresh time for refreshing data in the DRAM cells in the sleep mode. | 03-22-2012 |
| 20120066442 | SYSTEM AND METHOD OF PAGE BUFFER OPERATION FOR MEMORY DEVICES - Systems and methods are provided for using page buffers of memory devices connected to a memory controller through a common bus. A page buffer of a memory device is used as a temporary cache for data which is written to the memory cells of the memory device. This can allow the memory controller to use memory devices as temporary caches so that the memory controller can free up space in its own memory. | 03-15-2012 |
| 20120056643 | SYSTEM FOR TRANSMISSION LINE TERMINATINO BY SIGNAL CANCELLATION - A communication system having first and second states for use with a shared transmission line composed of at least two conductors and composed of first and second transmission line segments connected to each other at a single connection point. In the first state, a termination is coupled to the single connection point and is operative to at least attenuate a signal propagated between the first and second segments. In the second state, a driver is coupled to the connection point and is operative to conduct a signal over the first and second segments. | 03-08-2012 |
| 20120056335 | MULTI-CHIP PACKAGE WITH OFFSET DIE STACKING - A semiconductor device has a plurality of stacked semiconductor dice mounted on a substrate. Each die has similar dimensions. Each die has a first plurality of bonding pads arranged along a bonding edge of the die. A first group of the dice are mounted to the substrate with the bonding edge oriented in a first direction. A second group of the dice are mounted to the substrate with the bonding edge oriented in a second direction opposite the first direction. Each die is laterally offset in the second direction relative to the remaining dice by a respective lateral offset distance such that the bonding pads of each die are not disposed between the substrate and any portion of the remaining dice in a direction perpendicular to the substrate. A plurality of bonding wires connects the bonding pads to the substrate. A method of manufacturing a semiconductor device is also disclosed. | 03-08-2012 |
| 20120033497 | NON-VOLATILE MEMORY DEVICE HAVING CONFIGURABLE PAGE SIZE - A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted. | 02-09-2012 |
| 20120028506 | MODULAR OUTLET - In conjunction with a wiring in a house carrying data network signal, a modular outlet ( | 02-02-2012 |
| 20120023286 | APPARATUS AND METHOD OF PAGE PROGRAM OPERATION FOR MEMORY DEVICES WITH MIRROR BACK-UP OF DATA - An apparatus and method of page program operation is provided. When performing a page program operation with a selected memory device, a memory controller loads the data into the page buffer of one selected memory device and also into the page buffer of another selected memory device in order to store a back-up copy of the data. In the event that the data is not successfully programmed into the memory cells of the one selected memory device, then the memory controller recovers the data from the page buffer of the other memory device. Since a copy of the data is stored in the page buffer of the other memory device, the memory controller does not need to locally store the data in its data storage elements. | 01-26-2012 |
| 20120023285 | NON-VOLATILE MEMORY WITH DYNAMIC MULTI-MODE OPERATION - A method and system for extending the life span of a flash memory device. The flash memory device is dynamically configurable to store data in the single bit per cell (SBC) storage mode or the multiple bit per cell (MBC) mode, such that both SBC data and MBC data co-exist within the same memory array. One or more tag bits stored in each page of the memory is used to indicate the type of storage mode used for storing the data in the corresponding subdivision, where a subdivision can be a bank, block or page. A controller monitors the number of program-erase cycles corresponding to each page for selectively changing the storage mode in order to maximize lifespan of any subdivision of the multi-mode flash memory device. | 01-26-2012 |
| 20120020168 | POWER SUPPLIES IN FLASH MEMORY DEVICES AND SYSTEMS - Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level. | 01-26-2012 |
| 20120020155 | MULTIPAGE PROGRAM SCHEME FOR FLASH MEMORY - A circuit and method for programming multiple bits of data to flash memory cells in a single program operation cycle. Multiple pages of data to be programmed into one physical page of a flash memory array are stored in page buffers or other storage means on the memory device. The selected wordline connected to the cells to be programmed is driven with predetermined program profiles at different time intervals, where each predetermined program profile is configured for shifting an erase threshold voltage to a specific threshold voltage corresponding to a specific logic state. A multi-page bitline controller biases each bitline to enable or inhibit programming during each of the time intervals, in response to the combination of specific logic states of the bits belonging to each page of data that are associated with that respective bitline. | 01-26-2012 |
| 20120019282 | DYNAMIC IMPEDANCE CONTROL FOR INPUT/OUTPUT BUFFERS - A system and method of performing off chip drive (OCD) and on-die termination (ODT) are provided. A common pull-up network composed of transistors and a common pull-down network composed of transistors are employed to implement both of these functions. In drive mode, the pull-up network is configured to produce a calibrated drive impedance when an “on” output is to be generated, and the pull-up network is configured to produce a calibrated drive impedance when an “off” output is to be generated. In termination mode, the pull-up network and the pull-down network are configured to produce a calibrated pull-up resistance and pull-down resistance respectively such that together, they form a split termination. | 01-26-2012 |
| 20120008426 | HIGH SPEED DRAM ARCHITECTURE WITH UNIFORM ACCESS LATENCY - A Dynamic Random Access Memory (DRAM) performs read, write, and refresh operations. The DRAM includes a plurality of sub-arrays, each having a plurality of memory cells, each of which is coupled with a complementary bit line pair and a word line. The DRAM further includes a word line enable device for asserting a selected one of the word lines and a column select device for asserting a selected one of the bit line pairs. A timing circuit is provided for controlling the word line enable device, the column select device, and the read, write, and refresh operations in response to a word line timing pulse. The read, write, and refresh operation are performed in the same amount of time. | 01-12-2012 |
| 20120001684 | Systems and Methods for Minimizing Static Leakage of an Integrated Circuit - A leakage manager system for adequately minimizing static leakage of an integrated circuit is disclosed. The leakage manager system includes a generator configured to generate a control signal to be applied to a sleep transistor. A monitor is configured to determine whether to adjust the control signal to adequately minimize the static leakage. In some embodiments, the monitor includes an emulated sleep transistor. A regulator is configured to adjust the control signal depending on the determination. | 01-05-2012 |
| 20120001314 | MULTI-CHIP PACKAGE WITH THERMAL FRAME AND METHOD OF ASSEMBLING - A semiconductor device includes a substrate having a plurality of substrate bonding pads disposed on a bonding surface thereof. A plurality of semiconductor dice are stacked on the bonding surface of the substrate to form a die stack. Each die has a plurality of die bonding pads arranged along at least one bonding edge thereof. The remaining edges of each die are non-bonding edges. A plurality of bonding wires each electrically connects one of the die bonding pads to one of the substrate bonding pads. At least one thermally conductive layer is disposed between two adjacent semiconductor dice. At least one thermally conductive lateral portion is in thermal contact with the at least one layer of thermally conductive material. Each thermally conductive lateral portion is arranged along a non-bonding edge of the die stack. | 01-05-2012 |
| 20110317487 | MULTIPLE-BIT PER CELL (MBC) NON-VOLATILE MEMORY APPARATUS AND SYSTEM HAVING POLARITY CONTROL AND METHOD OF PROGRAMMING SAME - A Multiple-bit per Cell (MBC) non-volatile memory apparatus, method, and system wherein a controller for writing/reading data to/from a memory array controls polarity of data by selectively inverting data words to maximize a number of bits to be programmed within (M−1) virtual pages and selectively inverts data words to minimize a number of bits to be programmed in an M | 12-29-2011 |
| 20110317482 | PHASE CHANGE MEMORY WORD LINE DRIVER - A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby. | 12-29-2011 |
| 20110317238 | METHOD AND APPARATUS FOR OPTICAL PHASE MODULATION - A method of phase modulating optical radiation by the steps of phase modulating the optical radiation by using a modulator having an extinction ratio in order to provide a multilevel phase shift key signal, and applying to each optical pulse a phase-shift having an absolute value depending on the extinction ratio and a sign depending, for each of the optical pulses, on the respective optical phase value. An apparatus implementing the method is also disclosed. | 12-29-2011 |
| 20110316598 | APPARATUS AND METHOD FOR MODELING COARSE STEPSIZE DELAY ELEMENT AND DELAY LOCKED LOOP USING SAME - A reference circuit and method for mitigating switching jitter and delay-locked loop (DLL) using same are provided. The reference circuit and method determine a number of steps of a fine delay line (FDL) that are equivalent to a step of a coarse delay line (CDL). Switching jitter of the DLL is reduced since the delay of the step of the CDL that is switched when on an underflow or overflow condition of the FDL is detected is equivalent to the delay of the provided number of steps of the FDL. | 12-29-2011 |
| 20110314206 | APPARATUS AND METHOD FOR USING A PAGE BUFFER OF A MEMORY DEVICE AS A TEMPORARY CACHE - An apparatus and method are provided for using a page buffer of a memory device as a temporary cache for data. A memory controller writes data to the page buffer and later reads out the data without programming the data into the memory cells of the memory device. This allows the memory controller to use the page buffer as temporary cache so that the data does not have to occupy space within the memory controller's local data storage elements. Therefore, the memory controller can use the space in its own storage elements for other operations. | 12-22-2011 |
| 20110299810 | MODULAR OUTLET - In conjunction with a wiring in a house carrying data network signal, a modular outlet ( | 12-08-2011 |
| 20110299331 | FLASH MEMORY PROGRAM INHIBIT SCHEME - A method for minimizing program disturb in Flash memories. To reduce program disturb in a NAND Flash memory cell string where no programming from the erased state is desired, a local boosted channel inhibit scheme is used. In the local boosted channel inhibit scheme, the selected memory cell in a NAND string where no programming is desired, is decoupled from the other cells in the NAND string. This allows the channel of the decoupled cell to be locally boosted to a voltage level sufficient for inhibiting F-N tunneling when the corresponding wordline is raised to a programming voltage. Due to the high boosting efficiency, the pass voltage applied to the gates of the remaining memory cells in the NAND string can be reduced relative to prior art schemes, thereby minimizing program disturb while allowing for random page programming. | 12-08-2011 |
| 20110298128 | MULTI-CHIP PACKAGE WITH PILLAR CONNECTION - A semiconductor device has a substrate having a first plurality of substrate bonding pads disposed on a bonding surface thereof. A plurality of semiconductor dice is disposed on the substrate. Each die of the plurality of dice has a first plurality of die bonding pads arranged along at least one first edge thereof. A plurality of bonding pillars extends substantially vertically from the substrate bonding pads. Each bonding pillar electrically connects one of the first plurality of substrate bonding pads to a corresponding one of the first plurality of die bonding pads. A method of assembling a semiconductor device is also described. | 12-08-2011 |
| 20110296056 | HIGH-SPEED INTERFACE FOR DAISY-CHAINED DEVICES - A plurality of devices are operated by storing at a device a first ID number received at a first port of the device and a second ID number received at a second port of the device. The device receives a data command through at least one of the first and second ports. The data command has a command ID number. The device executes the data command when at least one of the command ID number is equal to the first ID number when the data command is received at the first port and the command ID number is equal to the second ID number when the data command is received at the second port. | 12-01-2011 |
| 20110291721 | Wide Frequency Range Delay Locked Loop - A delay locked loop operates over a wide range of frequencies and has high accuracy, small silicon area usage, low power consumption and a short lock time. The DLL combines an analog domain and a digital domain. The digital domain is responsible for initial lock and operational point stability and is frozen after the lock is reached. The analog domain is responsible for normal operation after lock is reached and provides high accuracy using smaller silicon area and low power. | 12-01-2011 |
| 20110286455 | METHOD AND APPARATUS FOR REDUCING POOL STARVATION IN A SHARED MEMORY SWITCH - A switch includes a reserved pool of buffers in a shared memory. The reserved pool of buffers is reserved for exclusive use by an egress port. The switch includes pool select logic which selects a free buffer from the reserved pool for storing data received from an ingress port to be forwarded to the egress port. The shared memory also includes a shared pool of buffers. The shared pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the shared pool upon detecting no free buffer in the reserved pool. The shared memory may also include a multicast pool of buffers. The multicast pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the multicast pool upon detecting an IP Multicast data packet received from an ingress port. | 11-24-2011 |
| 20110276775 | METHOD AND APPARATUS FOR CONCURRENTLY READING A PLURALITY OF MEMORY DEVICES USING A SINGLE BUFFER - A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices in response to global memory control signals having a format or protocol that is incompatible with the memory devices. The discrete memory devices can be commercial off-the-shelf memory devices or custom memory devices which respond to native, or local memory control signals. The global and local memory control signals include commands and command signals each having different formats. The composite memory device includes a system in package including the semiconductor dies of the discrete memory devices and the bridge device, or can include a printed circuit board having packaged discrete memory devices and a packaged bridge device mounted thereto. | 11-10-2011 |
| 20110267896 | Non-Volatile Semiconductor Memory with Page Erase - In a nonvolatile memory, less than a full block maybe erased as one or more pages. A select voltage is applied through pass transistors to each of plural selected wordlines and an unselect voltage is applied through pass transistor to each of plural unselected wordlines of a selected block. A substrate voltage is applied to the substrate of the selected block. A common select voltage may be applied to each selected wordline and the common unselect voltage may be applied to each unselected wordline. Select and unselect voltages may be applied to any of the wordlines of a select block. A page erase verify operation may be applied to a block having plural erased pages and plural nonerased pages. | 11-03-2011 |
| 20110264846 | SYSTEM OF INTERCONNECTED NONVOLATILE MEMORIES HAVING AUTOMATIC STATUS PACKET - An interconnection arrangement of nonvolatile memory devices is disclosed. In the arrangement, a plurality of memory devices are series-connected. A status of at least one of the plurality of memory devices is provided. The status includes “ready”, “busy”. The memory devices includes nonvolatile memories, such as, for example, flash memories. | 10-27-2011 |
| 20110261616 | WRITE SCHEME IN PHASE CHANGE MEMORY - A method for writing a phase change memory includes receiving an input data corresponding to a plurality of memory cells, while reading a previous data from the plurality of memory cells and comparing the input data with the previous data. Upon determining that the input data is different from the previous data for one or more of the plurality of memory cells, and upon determining that a current value of a write counter is less than a maximum value, one or more of the plurality of memory cells is programmed with the input data and the current value of the writer counter is incremented. | 10-27-2011 |
| 20110261613 | PHASE CHANGE MEMORY ARRAY BLOCKS WITH ALTERNATE SELECTION - A phase change memory is disclosed. The phase change memory has a plurality of block units. The block units are alternately selected. The alternate block unit selection suppresses peak current ground bouncing on sub-wordline and connected ground line through sub-wordline driver transistor. An alternate bitline selection avoids adjacent cell heating interference in the selected block unit. | 10-27-2011 |
| 20110260785 | Low Leakage and Data Retention Circuitry - An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry. | 10-27-2011 |
| 20110258399 | APPARATUS AND METHOD FOR IDENTIFYING DEVICE TYPES OF SERIES-CONNECTED DEVICES OF MIXED TYPE - A memory controller is unaware of device types (DTs) of a plurality (N) of series-connected memory devices in an interconnection configuration. Possible DTs include, e.g., random access memories and Flash memories. First, the memory controller sends a specific DT (“don't care”) and an initial number of binary code to the first device of the interconnection configuration and the binary code is propagated through the devices. Each device performs a “+1” calculation regardless of the DT. The last device provides the memory controller with Nד+1” from which the memory controller can obtain the number N of devices in the interconnection configuration. Thereafter, the memory controller sends a search number (SN) of binary code and a search DT for DT matching that propagate through the devices. Each device performs DT match determination of “previous match”, “present match” and “don't care match”. Based on the match determination, the SN and search DT are or not modified. The modified or non-modified SN and DT are propagated through the devices. Such processes are repeated. From the propagated SN and DT and the previously recognized number of the devices, the memory controller can identify the DT of each device in the interconnection configuration. | 10-20-2011 |
| 20110258366 | STATUS INDICATION IN A SYSTEM HAVING A PLURALITY OF MEMORY DEVICES - Status indication in a system having a plurality of memory devices is disclosed. A memory device in the system includes a plurality of data pins for connection to a data bus. The memory device also includes a status pin for connection to a status line that is independent from the data bus. The memory device also includes first circuitry for generating, upon completion of a memory operation having a first duration, a strobe pulse of a second duration much shorter than the first duration. The strobe pulse provides an indication of the completion of the memory operation. The memory device also includes second circuitry for outputting the strobe pulse onto the status line via the status pin. | 10-20-2011 |
| 20110255339 | METHOD AND SYSTEM FOR ACCESSING A FLASH MEMORY DEVICE - An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links. | 10-20-2011 |
| 20110252206 | MEMORY PROGRAMMING USING VARIABLE DATA WIDTH - A memory system comprises a memory including a plurality of bits arranged as one or more words. Each bit in each word is capable of being programmed either to a particular logical state or to another logical state. A variable data width controller is in communication with the memory. The variable data width controller comprises an adder to determine a programming number of bits in a word to be programmed into a memory. Each bit to be programmed is in the particular logical state. A partitioning block divides the word in to two or more sub-words when the programming number exceeds a maximum number. A switch is in communication with the partitioning block. The switch sequentially provides one or more write pulses. Each write pulse enables a separate communication path between the memory and one of the word and the sub-words. | 10-13-2011 |
| 20110242906 | DUAL FUNCTION COMPATIBLE NON-VOLATILE MEMORY DEVICE - A dual function memory device architecture compatible with asynchronous operation and synchronous serial operation. The dual function memory device architecture includes one set of physical ports having two different functional assignments. Coupled between the physical ports and core circuits of the memory device are asynchronous and synchronous input and output signal paths or circuits. The signal paths include shared or dedicated buffers coupled to the ports, asynchronous and synchronous command decoders, a network of switches, and a mode detector. The mode detector determines the operating mode of the dual function memory device from a port, and provides the appropriate switch selection signal. The network of switches routes the input or output signals through the asynchronous or synchronous circuits in response to the switch selection signal. The appropriate command decoder interprets the input signals and provides common control logic with the necessary signals for initiating the corresponding operation. | 10-06-2011 |
| 20110242885 | THREE-DIMENSIONAL PHASE CHANGE MEMORY - A memory device includes a stack of semiconductor layers. A circuit is on a layer of the stack of semiconductor layers. A primary memory array is on another layer of the stack of semiconductor layers different from the layer comprising the circuit. A plurality of electrical communication paths are between the circuit and the primary memory array. The circuit controls the operation of the primary memory array over the electrical communication paths. | 10-06-2011 |
| 20110238894 | Non-Volatile Memory Devices and Control and Operation Thereof - An improved non-volatile erase block memory device apparatus and method is described that incorporates an improved addressing scheme to provide for extended addressing allowing redundant erase blocks that are not utilized to repair general use erase blocks of the main memory array to be accessed and utilized as additional storage space by an end user. The additional storage space formed by the unused redundant erase blocks and the specified storage space of the main memory array is presented to the end user as a single contiguous address space. Additionally, the redundant erase blocks can be utilized to repair any damaged erase block in the memory array of the non-volatile erase block memory or Flash memory device regardless of bank placement. | 09-29-2011 |
| 20110235426 | FLASH MEMORY SYSTEM HAVING A PLURALITY OF SERIALLY CONNECTED DEVICES - A semiconductor memory device and system are disclosed. The memory device includes a memory, a plurality of inputs, and a device identification register for storing register bits that distinguish the memory device from other possible memory devices. Circuitry for comparing identification bits in the information signal with the register bits provides positive or negative indication as to whether the identification bits match the register bits. If the indication is positive, then the memory device is configured to respond as having been selected by a controller. If the indication is negative, then the memory device is configured to respond as having not been selected by the controller. A plurality of outputs release a set of output signals towards a next device. | 09-29-2011 |
| 20110235424 | HIERARCHICAL COMMON SOURCE LINE STRUCTURE IN NAND FLASH MEMORY - Each memory cell string in a generic NAND flash cell block connects to a Common Source Line (CLS). A value for applying to the CSL is centrally generated and distributed to a local switch logic unit corresponding to each NAND flash cell block. For source-line page programming, the distribution line may be called a Global Common Source Line (GCSL). In an array of NAND flash cell blocks, only one NAND flash cell block is selected at a time for programming. To reduce power consumption, only the selected NAND flash cell block receives a value on the CSL that is indicative of the value on the GCSL. Additionally, the CSLs of non-selected NAND flash cell blocks may be disabled through an active connection to ground. | 09-29-2011 |
| 20110234308 | BIAS GENERATOR PROVIDING FOR LOW POWER, SELF-BIASED DELAY ELEMENT AND DELAY LINE - An improved bias generator incorporates a reference voltage and/or a reference current into the generation of bias voltages. In some cases, the output of a biased delay element has a constant voltage swing. A delay line of such constant output voltage swing delay elements may be shown to provide reduced power consumption compared to some known self-biased delay lines. Furthermore, in other cases, providing the reference current to a novel bias generator allows a delay line of delay elements biased by such a novel bias generator to show reduced sensitivity to operating conditions, reduced sensitivity to variation in process parameters and improved signal quality, thereby providing more robust operation. | 09-29-2011 |
| 20110222350 | MULTI-LEVEL CELL ACCESS BUFFER WITH DUAL FUNCTION - An access buffer, such as page buffer, for writing to non-volatile memory, such as Flash, using a two-stage MLC (multi-level cell) operation is provided. The access buffer has a first latch for temporarily storing the data to be written. A second latch is provided for reading data from the memory as part of the two-stage write operation. The second latch has an inverter that participates in the latching function when reading from the memory. The same inverter is used to produce a complement of an input signal being written to the first latch with the result that a double ended input is used to write to the first latch. | 09-15-2011 |
| 20110211409 | Embedded Memory Databus Architecture - A dynamic random access memory (DRAM) having pairs of bitlines, each pair being connected to a first bit line sense amplifier, wordlines crossing the bitlines pairs forming an array, charge storage cells connected to the bitlines, each having an enable input connected to a wordline, the bit line sense amplifiers being connected in a two dimensional array, pairs of primary databuses being connected through first access transistors to plural corresponding bit line sense amplifiers in each row of the array, apparatus for enabling columns of the first access transistors, databus sense amplifiers each connected to a corresponding data bus pair, a secondary databus, the secondary databus being connected through second access transistors to the databus sense amplifiers, and apparatus for enabling the second access transistors, whereby each the primary databus pair may be shared by plural sense amplifiers in a corresponding row of the array and the secondary databus may be shared by plural primary databus pairs | 09-01-2011 |
| 20110208976 | Method And Apparatus For Processing Arbitrary Key Bit Length Encryption Operations With Similar Efficiencies - A calculating apparatus, or system, having a plurality of stages, such as in a pipeline arrangement, has the clocking rail or conductor positioned alongside the stages. With a large number, i.e., hundreds, of stages arranged in parallel sub-arrays, the clocking conductor is snaked alongside the sub-arrays. In individual stages it is arranged that the shortest of the two calculations taking place in a stage, takes place in the return path. An array can be divided into separate sections for independent processing. | 08-25-2011 |
| 20110204939 | Circuit for Clamping Current in a Charge Pump - A circuit for clamping current in a charge pump is disclosed. The charge pump includes switching circuitry having a number of switching circuitry transistors. Each of first and second pairs of transistors in the circuit can provide an additional path for current from its associated one of the switching circuitry transistors during off-switching of that transistor so that a spike in current from the switching circuitry transistor is only partially transmitted through a path extending between the switching circuitry transistor and a capacitor of the charge pump. | 08-25-2011 |
| 20110202713 | Semiconductor Memory Asynchronous Pipeline - An asynchronously pipelined SDRAM has separate pipeline stages that are controlled by asynchronous signals. Rather than using a clock signal to synchronize data at each stage, an asynchronous signal is used to latch data at every stage. The asynchronous control signals are generated within the chip and are optimized to the different latency stages. Longer latency stages require larger delays elements, while shorter latency states require shorter delay elements. The data is synchronized to the clock at the end of the read data path before being read out of the chip. Because the data has been latched at each pipeline stage, it suffers from less skew than would be seen in a conventional wave pipeline architecture. Furthermore, since the stages are independent of the system clock, the read data path can be run at any CAS latency as long as the re-synchronizing output is built to support it. | 08-18-2011 |
| 20110194365 | BRIDGE DEVICE ARCHITECTURE FOR CONNECTING DISCRETE MEMORY DEVICES TO A SYSTEM - Bridge device architecture for connecting discrete memory devices is disclosed. A bridge device is used in conjunction with a composite memory device including at least one discrete memory device. The bridge device comprises a local control interface connected to the at least one discrete memory device, a local input/output interface connected to the at least one discrete memory device, and a global input/output interface interposed between the local control interface and the local input/output interface. The global input/output interface receives and provides global memory control signals and also receives and provides write data to and read data from the at least one discrete memory device. | 08-11-2011 |
| 20110194351 | SOURCE SIDE ASYMMETRICAL PRECHARGE PROGRAMMING SCHEME - A method for programming NAND flash cells to minimize program stress while allowing for random page programming operations. The method includes asymmetrically precharging a NAND string from a positively biased source line while the bitline is decoupled from the NAND string, followed by the application of a programming voltage to the selected memory cell, and then followed by the application of bitline data. After asymmetrical precharging and application of the programming voltage, all the selected memory cells will be set to a program inhibit state as they will be decoupled from the other memory cells in their respective NAND strings, and their channels will be locally boosted to a voltage effective for inhibiting programming. A VSS biased bitline will discharge the locally boosted channel to VSS, thereby allowing programming of the selected memory cell to occur. A VDD biased bitline will have no effect on the precharged NAND string, thereby maintaining a program inhibited state of that selected memory cell. | 08-11-2011 |
| 20110185086 | APPARATUS AND METHOD FOR PRODUCING DEVICE IDENTIFIERS FOR SERIALLY INTERCONNECTED DEVICES OF MIXED TYPE - A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs and NAND-, NOR- and AND-type Flash memories) are serially interconnected. Each device has device type information on its device type. A specific device type (DT) and a device identifier (ID) contained in a serial input (SI) are fed to one device of the serial interconnection. The device determines whether the fed DT matches the DT of the device. In a case of match, a calculator included in the device performs calculation to generate an ID for another device and the fed ID is latched in a register of the device. The generated ID is transferred to another device of the serial interconnection. In a case of no match, the ID generation is skipped and no ID is generated for another device. Such a device type match determination and ID generation or skip are performed in all devices of the serial interconnection. In cases of different device types being separately provided to the interconnected devices, sequential IDs are generated in each of the different device types and also the total number of each device type are recognized. In a case of a “don't care” code is provided to the interconnected devices, sequential IDs are generated and also, the total number of the interconnected devices is recognized, regardless of the type differences. | 07-28-2011 |
| 20110179245 | INDEPENDENT LINK AND BANK SELECTION - Provided is a memory system that has a plurality of memory banks and a plurality of link controllers. For each memory bank, there is first switching logic for receiving output for each link controller, and for passing on the output of only one of the link controllers to the memory bank. For each link controller, there is second switching logic for receiving an output of each memory bank, and for passing on the output of only one of the memory banks to the link controller. According to an embodiment of the invention, there is switch controller logic for controlling operation of both the first switching logic and the second switching logic to prevent simultaneous or overlapping access by multiple link controllers to the same memory bank, and for preventing simultaneous or overlapping access to multiple banks by the same link controller. | 07-21-2011 |
| 20110170367 | DYNAMIC RANDOM ACCESS MEMORY WITH FULLY INDEPENDENT PARTIAL ARRAY REFRESH FUNCTION - A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application. | 07-14-2011 |
| 20110170366 | TEMPERATURE DETECTOR IN AN INTEGRATED CIRCUIT - A method for determining a temperature in a circuit comprises receiving a periodic signal. A frequency of the periodic signal is an increasing function of temperature. A number of oscillations of the periodic signal is determined during a time interval. A length of the time interval is an increasing function of temperature. The temperature is based on the determined number of oscillations. | 07-14-2011 |
| 20110170352 | NAND FLASH MEMORY HAVING MULTIPLE CELL SUBSTRATES - A NAND flash memory bank having a plurality of bitlines of a memory array connected to a page buffer, where NAND cell strings connected to the same bitline are formed in at least two well sectors. At least one well sector can be selectively coupled to an erase voltage during an erase operation, such that unselected well sectors are inhibited from receiving the erase voltage. When the area of the well sectors decrease, a corresponding decrease in the capacitance of each well sector results. Accordingly, higher speed erasing of the NAND flash memory cells relative to a single well memory bank is obtained when the charge pump circuit drive capacity remains unchanged. Alternately, a constant erase speed corresponding to a single well memory bank is obtained by matching a well segment having a specific area to a charge pump with reduced drive capacity. A reduced drive capacity charge pump will occupy less semiconductor chip area, thereby reducing cost. | 07-14-2011 |
| 20110163423 | METHOD FOR STACKING SERIALLY-CONNECTED INTEGRATED CIRCUITS AND MULTI-CHIP DEVICE MADE FROM SAME - A multi-chip device and method of stacking a plurality substantially identical chips to produce the device are provided. The multi-chip device, or circuit, includes at least one through-chip via providing a parallel connection between signal pads from at least two chips, and at least one through-chip via providing a serial or daisy chain connection between signal pads from at least two chips. Common connection signal pads are arranged symmetrically about a center line of the chip with respect to duplicate common signal pads. Input signal pads are symmetrically disposed about the center line of the chip with respect to corresponding output signal pads. The chips in the stack are alternating flipped versions of the substantially identical chip to provide for this arrangement. At least one serial connection is provided between signal pads of stacked and flipped chips when more than two chips are stacked. | 07-07-2011 |
| 20110154137 | DATA CHANNEL TEST APPARATUS AND METHOD THEREOF - A system includes a plurality of devices that are connected in series and a controller that communicates with the devices. Each of the devices has a plurality of input ports and corresponding output ports. The outputs of one device and the inputs of a next device are interconnected. The controller is coupled to the first device and the last device of the series-connection. The controller applies a test pattern to the plurality of input ports at the first device connected in series, by the controller. Each data channel defines a data path between corresponding pairs of input and output ports of the first and last devices. A data channel is enabled if the test pattern is detected at its corresponding output port. | 06-23-2011 |
| 20110153974 | SYSTEM AND METHOD OF OPERATING MEMORY DEVICES OF MIXED TYPE - A memory system architecture is provided in which a memory controller controls memory devices in a serial interconnection configuration. The memory controller has an output port for sending memory commands and an input port for receiving memory responses for those memory commands requisitioning such responses. Each memory device includes a memory, such as, for example, NAND-type flash memory, NOR-type flash memory, random access memory and static random access memory. Each memory command is specific to the memory type of a target memory device. A data path for the memory commands and the memory responses is provided by the interconnection. A given memory command traverses memory devices in order to reach its intended memory device of the serial interconnection configuration. Upon its receipt, the intended memory device executes the given memory command and, if appropriate, sends a memory response to a next memory device. The memory response is transferred to the memory controller. | 06-23-2011 |
| 20110153973 | HYBRID SOLID-STATE MEMORY SYSTEM HAVING VOLATILE AND NON-VOLATILE MEMORY - A hybrid solid-state memory system is provided for storing data. The solid-state memory system comprises a volatile solid-state memory, a non-volatile solid-state memory, and a memory controller. Further, a method is provided for storing data in the solid-state memory system. The method comprises the following steps. A write command is received by the memory controller. Write data is stored in the volatile memory in response to the write command. Data is transferred from the volatile memory to the non-volatile memory in response to a data transfer request. | 06-23-2011 |
| 20110141835 | CIRCUIT AND METHOD FOR TESTING MULTI-DEVICE SYSTEMS - A method and system for high speed testing of memories in a multi-device system, where individual devices of the multi-device system are arranged in a serial interconnected configuration. High speed testing is achieved by first writing test pattern data to the memory banks of each device of the multi-device system, followed by local test read-out and comparison of the data in each device. Each device generates local result data representing the absence or presence of a failed bit position in the device. Serial test circuitry in each device compares the local result data with global result data from a previous device. The test circuitry compresses this result of this comparison and provides it to the next device as an updated global result data. Hence, the updated global result data will represent the local result data of all the previous devices. | 06-16-2011 |
| 20110131445 | Apparatus and Method of PAGE Program Operation for Memory Devices with Mirror Back-Up of Data - An apparatus and method of page program operation is provided. When performing a page program operation with a selected memory device, a memory controller loads the data into the page buffer of one selected memory device and also into the page buffer of another selected memory device in order to store a back-up copy of the data. In the event that the data is not successfully programmed into the memory cells of the one selected memory device, then the memory controller recovers the data from the page buffer of the other memory device. Since a copy of the data is stored in the page buffer of the other memory device, the memory controller does not need to locally store the data in its data storage elements. | 06-02-2011 |
| 20110131383 | MODULAR COMMAND STRUCTURE FOR MEMORY AND MEMORY SYSTEM - A system including a memory system and a memory controller is connected to a host system. The memory system has at least one memory device storing data. The controller translates the requests from the host system to one or more separatable commands interpretable by the at least one memory device. Each command has a modular structure including an address identifier for one of the at least one memory devices and a command identifier representing an operation to be performed by the one of the at least one memory devices. The at least one memory device and the controller are in a series-connection configuration for communication such that only one memory device is in communication with the controller for input into the memory system. The memory system can include a plurality of memory devices connected to a common bus. | 06-02-2011 |
| 20110111589 | BARRIER-METAL-FREE COPPER CAMASCENCE TECHNOLOGY USING ATOMIC HYDROGEN ENHANCED REFLOW - A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor. | 05-12-2011 |
| 20110110388 | METHOD AND APPARATUS FOR REDUCING THE AMPLITUDE MODULATION OF OPTICAL SIGNALS IN EXTERNAL CAVITY LASERS - The present invention concerns a laser apparatus ( | 05-12-2011 |
| 20110110165 | CLOCK MODE DETERMINATION IN A MEMORY SYSTEM - A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device. | 05-12-2011 |
| 20110110155 | STACKED SEMICONDUCTOR DEVICES INCLUDING A MASTER DEVICE - A stack that includes non-volatile memory devices is disclosed. One of the non-volatile memory devices in the stack is a master device, and the remaining memory device or devices is a slave device(s). | 05-12-2011 |
| 20110109365 | DELAY LOCKED LOOP CIRCUIT - The disclosure relates to phase detectors. Charge up and charge down signals that are generated by a phase detector cause i) following detection of a first edge of a reference clock signal, switching on of a switching transistor of sink current; ii) following detection of an edge of a feedback clock signal falling within less than 180 degrees from the first edge, switching on of a switching transistor of source current and switching off of the switching transistor of sink current; and iii) following detection of an edge of another reference signal at a point in time about midway between the first edge and a next similar edge of the reference clock signal has past, switching off of the switching transistor of source current while maintaining the switching transistor of sink current switched off. | 05-12-2011 |
| 20110103169 | DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR SELF-REFRESHING MEMORY CELLS - A dynamic random access memory (DRAM) device having memory cells is operated in a self-refresh mode and a normal mode. A mode detector provides a self-refresh mode signal in the self-refresh mode of operation. It includes a free-running oscillator for generating an oscillation signal independent of the self-refresh mode signal. In response to the oscillation signal, a self-request controller provides a self-refresh request signal in the self-refresh mode. The self-refresh signal is asynchoronized with the self-fresh mode signal and is provided to an address circuit to select a wordline for refreshing the memory cells thereof. The self-refresh request controller includes logic circuitry for arbitrating timing between initial active edges of the oscillation signal and the self-refresh mode signal and providing the self-refresh request and ceasing it, regardless of conflict between the self-refresh mode signal and the oscillation signal upon self-refresh mode entry and exit. The DRAM devices perform and achieve reliable self-refresh for variable DRAM cell retention time. | 05-05-2011 |
| 20110102034 | CHARGE PUMP FOR PLL/DLL - A charge pump for use in a Phase Locked Loop/Delay Locked Loop minimizes static phase error through the use of an operational amplifier. The operational amplifier also mitigates the effects of low power supply voltage. | 05-05-2011 |
| 20110097939 | MODULAR OUTLET - In conjunction with a wiring in a house carrying data network signal, a modular outlet ( | 04-28-2011 |
| 20110096778 | OUTLET WITH ANALOG SIGNAL ADAPTER, A METHOD FOR USE THEREOF AND A NETWORK USING SAID OUTLET - An outlet ( | 04-28-2011 |
| 20110096614 | SINGLE-STROBE OPERATION OF MEMORY DEVICES - An arrangement of memory devices and a controller is based on an interface with a reduced pin count relative to a known memory device and controller arrangement. Facilitating the reduced pin count interface the reduction of multiple strobe signal to a single strobe signal. In addition, a packet header transmitted on the data bus followed by a payload, includes an encoded indication of the type of the payload. Aspects of the present application relate to providing a traditional memory device with external logic devices, where the logic devices handle the single strobe and the packet header, thereby permitting single strobe operation. | 04-28-2011 |
| 20110095796 | PROCESS, VOLTAGE, TEMPERATURE INDEPENDENT SWITCHED DELAY COMPENSATION SCHEME - A delay compensation circuit for a delay locked loop which includes a main delay line having a fine delay line comprising fine delay elements and a coarse delay line comprising coarse delay elements, the main delay line being controlled by a controller, the delay compensation circuit comprising: an adjustable fine delay for modeling a coarse delay element, a counter for controlling the adjustable fine delay to a value which is substantially the same as that of a coarse delay element, a circuit for applying a representation of the system clock to the delay compensation circuit, and a circuit for applying the fine delay count from the counter to the controller for adjusting the fine delay line of the main delay line to a value which is substantially the same as that of a coarse delay element of the main delay line. | 04-28-2011 |
| 20110090004 | RECONFIGURING THROUGH SILICON VIAS IN STACKED MULTI-DIE PACKAGES - Through silicon vias (TSVs) in a stacked multi-die integrated circuit package are controlled to assume different connection configurations as desired during field operation of the package in its normal mission mode. TSV connections may be reconfigured to connect an affected die in a manner different from, for example, a factory default connection of that die. TSV connections to the inputs and/or outputs of a die's native circuitry may be changed. A die may be disconnected altogether from an interface that interconnects dice in the stack, or a die that was originally disconnected from such an interface may be connected to the interface. | 04-21-2011 |
| 20110087823 | APPARATUS AND METHOD FOR PRODUCING IDS FOR INTERCONNECTED DEVICES OF MIXED TYPE - A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs, and NAND-, NOR-, AND-type Flash memories) are serially interconnected. Each device has device type information on its device type. A specific device type (DT) and a device identifier (ID) contained in a serial input are fed to one device of the serial interconnection configuration. The device determines whether the fed DT matches the DT of the device. In a case of match, a calculator included in the device performs calculation to generate an ID for another device and the fed ID is latched in a register of the device. The generated ID is transferred to another device of the serial interconnection. In a case of no match, the ID generation is skipped and no ID is generated for another device. Such a device type match determination and ID generation or skip are performed in all devices of the serial interconnection. | 04-14-2011 |
| 20110069551 | Non-Volatile Semiconductor Memory with Page Erase - In a nonvolatile memory, less than a full block maybe erased as one or more pages. A select voltage is applied through pass transistors to each of plural selected wordlines and an unselect voltage is applied through pass transistor to each of plural unselected wordlines of a selected block. A substrate voltage is applied to the substrate of the selected block. A common select voltage may be applied to each selected wordline and the common unselect voltage may be applied to each unselected wordline. Select and unselect voltages may be applied to any of the wordlines of a select block. A page erase verify operation may be applied to a block having plural erased pages and plural nonerased pages. | 03-24-2011 |
| 20110068474 | SEMICONDUCTOR DEVICE HAVING METAL LINES WITH SLITS - A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from each other by a space, and each of the first and second adjacent metal line patterns has at least one slit. | 03-24-2011 |
| 20110063006 | TIMING VERNIER USING A DELAY LOCKED LOOP - A method for synchronizing a plurality of programmable timing verniers with a reference pulse signal, each of the verniers being programmable to one of a plurality of timing steps within a delay range determined by a control signal applied to a bias input. A first and second control vernier is selected from the plurality of verniers, the first control vernier is programmed to a first delay, and the second control vernier is programmed to a second delay. The first and second control verniers are triggered together to generate respective first and second delay signals. A difference pulse signal is generated with a duty cycle corresponding to a difference between the generated first delay signal and second delay signal. The duty cycle of the pulse signal is compared to a duty cycle of the reference pulse signal to generate a difference signal pulse. The difference signal pulse is coupled to the bias input of the verniers to adjust the delay range, such that the duty cycle of the difference signal approaches the duty cycle of the reference pulse signal. | 03-17-2011 |
| 20110050320 | USING INTERRUPTED THROUGH-SILICON-VIAS IN INTEGRATED CIRCUITS ADAPTED FOR STACKING - In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack. | 03-03-2011 |
| 20110043246 | DYNAMIC IMPEDANCE CONTROL FOR INPUT/OUTPUT BUFFERS - A system and method of performing off chip drive (OCD) and on-die termination (ODT) are provided. A common pull-up network composed of transistors and a common pull-down network composed of transistors are employed to implement both of these functions. In drive mode, the pull-up network is configured to produce a calibrated drive impedance when an “on” output is to be generated, and the pull-up network is configured to produce a calibrated drive impedance when an “off” output is to be generated. In termination mode, the pull-up network and the pull-down network are configured to produce a calibrated pull-up resistance and pull-down resistance respectively such that together, they form a split termination. | 02-24-2011 |
| 20110038368 | TELEPHONE COMMUNICATION SYSTEM AND METHOD OVER LOCAL AREA NETWORK WIRING - A device for enabling a local area network wiring structure to simultaneously carry digital data and analog telephone signals on the same transmission medium. It is particularly applicable to a network in star topology, in which remote data units (e.g. personal computers) are each connected to a hub through a cable comprising at least two pairs of conductors, providing a data communication path in each direction. Modules at each end of the cable provide a phantom path for telephony (voice band), signals between a telephone near the data set and a PBX, through both conductor pairs in a phantom circuit arrangement. All such communication paths function simultaneously and without mutual interference. The modules comprise simple and inexpensive passive circuit components. | 02-17-2011 |
| 20110037148 | PACKAGE-LEVEL INTEGRATED CIRCUIT CONNECTION WITHOUT TOP METAL PADS OR BONDING WIRE - An integrated circuit apparatus is provided with package-level connectivity, between internal electronic circuitry thereof and contact points on a package substrate thereof, without requiring top metal pads or bonding wires. | 02-17-2011 |
| 20110032773 | POWER SUPPLIES IN FLASH MEMORY DEVICES AND SYSTEMS - Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level. | 02-10-2011 |
| 20110016282 | SYNCHRONOUS MEMORY READ DATA CAPTURE - A method of snap-shot data training to determine the optimum timing of the DQS enable signal in a single read operation is provided. This is accomplished by first writing a Gray code count sequence into the memory and then reading it back in a single burst. The controller samples the read burst at a fixed interval from the time the command was issued to determine the loop-around delay. A simple truth table lookup determines the optimum DQS enable timing for normal reads. Advantageously, during normal read operations, the first positive edge of the enabled DQS signal is used to sample a counter that is enabled every time a command is issued. If the counter sample changes, indicating timing drift has occurred, the DQS enable signal can be adjusted to compensate for the drift and maintain a position centered in the DQS preamble. This technique can also be applied to a system that uses the iterative approach to determining DQS enable timing on power up. Another embodiment of the invention is a simple, low latency clock domain crossing circuit based on the DQS latched sample of the counter. | 01-20-2011 |
| 20110016279 | SIMULTANEOUS READ AND WRITE DATA TRANSFER - A controller for an arrangement of memory devices may issue a write command without waiting for the receipt of a previously issued read command. An addressed memory device may read data out onto the data bus according to a read command while, simultaneously, writing data according to a write command received subsequent to the read command. | 01-20-2011 |
| 20110016236 | APPARATUS AND METHOD FOR PRODUCING IDENTIFIERS REGARDLESS OF MIXED DEVICE TYPE IN A SERIAL INTERCONNECTION - A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs, and NAND-, NOR- and AND-type Flash memories) is serially interconnected. Each device has device type information on its device type. A specific device type (DT) and a device identifier (ID) contained in a serial input (SI) as a packet are fed to one device of the serial interconnection. The device determines whether the fed DT matches the DT of the device. In a case of match, a calculator included in the device performs calculation to generate an ID accompanying the fed DT for another device and the fed ID is latched in a register of the device. In a case of no match, the ID generation is skipped and no ID is generated for another device. The DT is combined with the generated or the received ID depending on the device type match determination. The combined DT and ID is as a packet transferred to a next device. Such a device type match determination and ID generation or skip are performed in all devices of the serial interconnection. With reference to device type provided to the interconnected devices, IDs are sequentially generated. The SI containing the DT, the ID and an ID generation command is transmitted in a packet basis to a next device. A memory controller can recognize the total number of one DT, in response to the ID received from the last device. In a case of a “don't care” DT is provided to the interconnected devices, IDs are sequentially generated and the total number of the interconnected devices is recognized, regardless of the differences in DTs of the devices. | 01-20-2011 |
| 20110013455 | NON-VOLATILE MEMORY SERIAL CORE ARCHITECTURE - A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density. | 01-20-2011 |
| 20110007564 | FLASH MULTI-LEVEL THRESHOLD DISTRIBUTION SCHEME - A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages. | 01-13-2011 |
| 20110002171 | MEMORY WITH OUTPUT CONTROL - An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. | 01-06-2011 |
| 20100332685 | APPARATUS AND METHOD FOR CAPTURING SERIAL INPUT DATA - A serial input processing apparatus provides how to capture serial data without loss of a single bit while command interpretation is being performed in a command decoder at high frequency. Individual bytes of serial bits of a pre-defined sequence are latched and bit streams are temporarily stored with multiple clocks. The temporary store is conducted before transferring byte information to assigned address registers to register the address. The address registration and the data registration are performed by latching all bit streams of the serial input at the leading edges of clocks. While at a high frequency operation (e.g., 1 GHz or 1 ns cycle time), no additional registers are required for storing bit data during command interpretation with enough time margins between the command bit stream interpretation and next bit data stream. | 12-30-2010 |
| 20100329051 | METHOD AND APPARATUS FOR SYNCHRONIZATION OF ROW AND COLUMN ACCESS OPERATIONS - A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit line pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled. | 12-30-2010 |
| 20100327923 | BRIDGING DEVICE HAVING A FREQUENCY CONFIGURABLE CLOCK DOMAIN - A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. A configurable clock controller receives a system clock and generates a memory clock having a frequency that is a predetermined ratio of the system clock. The system clock frequency is dynamically variable between a maximum and a minimum value, and the ratio of the memory clock frequency relative to the system clock frequency is set by loading a frequency register with a Frequency Divide Ratio (FDR) code any time during operation of the composite memory device. In response to the FDR code, the configurable clock controller changes the memory clock frequency. | 12-30-2010 |
| 20100325353 | FLASH MEMORY SYSTEM CONTROL SCHEME - A Flash memory system architecture having serially connected Flash memory devices to achieve high speed programming of data. High speed programming of data is achieved by interleaving pages of the data to be programmed amongst the memory devices in the system, such that different pages of data are stored in different memory devices. A memory controller issues program commands for each memory device. As each memory device receives a program command, it either begins a programming operation or passes the command to the next memory device. Therefore, the memory devices in the Flash system sequentially program pages of data one after the other, thereby minimizing delay in programming each page of data into the Flash memory system. The memory controller can execute a wear leveling algorithm to maximize the endurance of each memory device, or to optimize programming performance and endurance for data of any size. | 12-23-2010 |
| 20100306569 | DATA FLOW CONTROL IN MULTIPLE INDEPENDENT PORT - A system includes a memory controller and a plurality of memory devices connected in-series that communicate with the memory controller. Each of the memory devices has multiple independent serial ports for receiving and transmitting data. The memory controller a device address (DA) or ID number for designating a device that executes a command. Data contained in the command sent by the memory controller is captured by an individual link control circuit, in response to internally generated clock with appropriate latencies. The captured data is written into a corresponding memory bank. The data stored in one of a plurality of memory banks of one memory device is read in accordance with the addresses issued by the memory controller. The read data is propagated from the memory device through the series-connected memory devices to the memory controller. | 12-02-2010 |
| 20100306482 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile memory having a non-power of two memory capacity is disclosed. The nonvolatile memory device includes at least one plane. The plane includes a plurality of blocks with each of the blocks divided into a number of pages and each of the blocks defined along a first dimension by a first number of memory cells for storing data, and along a second dimension of by a second number of memory cells for storing data. The nonvolatile memory has a non-power of two capacity proportionally related to a total number of memory cells in said plane. The nonvolatile memory also includes a plurality of row decoders. An at least substantially one-to-one relationship exists, in the memory device, for number of row decoders to number of pages. Each of the row decoders is configured to facilitate a read operation on an associated page of the memory device. | 12-02-2010 |
| 20100297812 | METHOD FOR STACKING SERIALLY-CONNECTED INTEGRATED CIRCUITS AND MULTI-CHIP DEVICE MADE FROM SAME - A multi-chip device and method of stacking a plurality substantially identical chips to produce the device are provided. The multi-chip device, or circuit, includes at least one through-chip via providing a parallel connection between signal pads from at least two chips, and at least one through-chip via providing a serial or daisy chain connection between signal pads from at least two chips. Common connection signal pads are arranged symmetrically about a center line of the chip with respect to duplicate common signal pads. Input signal pads are symmetrically disposed about the center line of the chip with respect to corresponding output signal pads. The chips in the stack are alternating flipped versions of the substantially identical chip to provide for this arrangement. At least one serial connection is provided between signal pads of stacked and flipped chips when more than two chips are stacked. | 11-25-2010 |
| 20100296256 | CONFIGURABLE MODULE AND MEMORY SUBSYSTEM - A configurable memory subsystem includes a memory module with a circuit board having a first and a second memory-containing device (MCD) pair mounted thereto. Each MCD pair has a first MCD in communication with a second MCD. Each MCD has an input port, an output port, and a memory each communicating with a bridge. In response to a command, the bridge transfers at least one of a portion of a data packet from the input port to the output port or to the memory, or transfers a portion of a memory packet from the memory to the output port. A loop-back device receives the command and the data packet form the first MCD pair and transmits the command and data packet to the second MCD pair. | 11-25-2010 |
| 20100275056 | APPARATUS AND METHOD OF PAGE PROGRAM OPERATION FOR MEMORY DEVICES WITH MIRROR BACK-UP OF DATA - An apparatus and method of page program operation is provided. When performing a page program operation with a selected memory device, a memory controller loads the data into the page buffer of one selected memory device and also into the page buffer of another selected memory device in order to store a back-up copy of the data. In the event that the data is not successfully programmed into the memory cells of the one selected memory device, then the memory controller recovers the data from the page buffer of the other memory device. Since a copy of the data is stored in the page buffer of the other memory device, the memory controller does not need to locally store the data in its data storage elements. | 10-28-2010 |
| 20100268906 | HIGH BANDWIDTH MEMORY INTERFACE - This invention describes an improved high bandwidth chip-to-chip interface for memory devices, which is capable of operating at higher speeds, while maintaining error free data transmission, consuming lower power, and supporting more load. Accordingly, the invention provides a memory subsystem comprising at least two semiconductor devices; a main bus containing a plurality of bus lines for carrying substantially all data and command information needed by the devices, the semiconductor devices including at least one memory device connected in parallel to the bus; the bus lines including respective row command lines and column command lines; a clock generator for coupling to a clock line, the devices including clock inputs for coupling to the clock line; and the devices including programmable delay elements coupled to the clock inputs to delay the clock edges for setting an input data sampling time of the memory device. | 10-21-2010 |
| 20100268874 | METHOD OF CONFIGURING NON-VOLATILE MEMORY FOR A HYBRID DISK DRIVE - A system, method and machine-readable medium are provided to configure a non-volatile memory (NVM) including a plurality of NVM modules, in a system having a hard disk drive (HDD) and an operating system (O/S). In response to a user selection of a hybrid drive mode for the NVM, the plurality of NVM modules are ranked according to speed performance. Boot portions of the O/S are copied to a highly ranked NVM module, or a plurality of highly ranked NVM modules, and the HDD and the highly ranked NVM modules are assigned as a logical hybrid drive of the computer system. Ranking each of the plurality of NVM modules can include carrying out a speed performance test. This approach can provide hybrid disk performance using conventional hardware, or enhance performance of an existing hybrid drive, while taking into account relative performance of available NVM modules. | 10-21-2010 |
| 20100254363 | NETWORK COMBINING WIRED AND NON-WIRED SEGMENTS - A local area network ( | 10-07-2010 |
| 20100254362 | NETWORK COMBINING WIRED AND NON-WIRED SEGMENTS - A local area network ( | 10-07-2010 |
| 20100250699 | METHOD AND APPARATUS FOR REDUCING POOL STARVATION IN A SHARED MEMORY SWITCH - A switch includes a reserved pool of buffers in a shared memory. The reserved pool of buffers is reserved for exclusive use by an egress port. The switch includes pool select logic which selects a free buffer from the reserved pool for storing data received from an ingress port to be forwarded to the egress port. The shared memory also includes a shared pool of buffers. The shared pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the shared pool upon detecting no free buffer in the reserved pool. The shared memory may also include a multicast pool of buffers. The multicast pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the multicast pool upon detecting an IP Multicast data packet received from an ingress port. | 09-30-2010 |
| 20100246786 | TELEPHONE OUTLET FOR IMPLEMENTING A LOCAL AREA NETWORK OVER TELEPHONE LINES AND A LOCAL AREA NETWORK USING SUCH OUTLETS - A network for transporting power and multiplexed data and digital telephone signals. The network includes at least three nodes and first and second wiring segments in a building for carrying the multiplexed data and digital telephone signals, and at least one of the segments is configured to additionally carry a power signal. A power consuming component is connected to the at least one wiring segment and is powered by the power signal carried by that segment. Each wiring segment connects a different pair of the nodes together to form, with nodes nodes, a packet based bi-directional communication link. One of the nodes contains communication link composed of a repeater, a bridge, or a router connectable to a data unit. At least one of the nodes is connected to a remote data unit external to the building for coupling the remote data unit to at least one of said communication links. | 09-30-2010 |
| 20100232237 | HIGH SPEED DRAM ARCHITECTURE WITH UNIFORM ACCESS LATENCY - A Dynamic Random Access Memory (DRAM) performs read, write, and refresh operations. The DRAM includes a plurality of sub-arrays, each having a plurality of memory cells, each of which is coupled with a complementary bit line pair and a word line. The DRAM further includes a word line enable device for asserting a selected one of the word lines and a column select device for asserting a selected one of the bit line pairs. A timing circuit is provided for controlling the word line enable device, the column select device, and the read, write, and refresh operations in response to a word line timing pulse. The read, write, and refresh operation are performed in the same amount of time. | 09-16-2010 |
| 20100232236 | SRAM LEAKAGE REDUCTION CIRCUIT - A method and system are provided for maintaining a virtual ground node of an SRAM memory array at a minimum level sufficient for maintaining data retention. A circuit can maintain the virtual ground node at a virtual ground reference voltage of V | 09-16-2010 |
| 20100226183 | PARTIAL BLOCK ERASE ARCHITECTURE FOR FLASH MEMORY - A method and system for increasing the lifespan of a flash memory device by selectively erasing sub-blocks of a memory block. Each physical memory block of the flash memory device is dividable into at least two logical sub-blocks, where each of the at least two logical sub-blocks is erasable. Therefore, only the data of the logical sub-block is erased and reprogrammed while unmodified data in the other logical sub-block avoids unnecessary program/erase cycles. The logical sub-blocks to be erased are dynamically configurable in size and location within the block. A wear leveling algorithm is used for distributing data throughout the physical and logical sub-blocks of the memory array to maximize the lifespan of the physical blocks during programming and data modification operations. | 09-09-2010 |
| 20100226179 | NAND FLASH ARCHITECTURE WITH MULTI-LEVEL ROW DECODING - A NAND flash memory device is disclosed. The NAND flash memory device includes a NAND flash memory array defined as a plurality of sectors. Row decoding is performed in two levels. The first level is performed that is applicable to all of the sectors. This can be used to select a block, for example. The second level is performed for a particular sector, to select a page within a block in the particular sector, for example. Read and program operations take place to the resolution of a page within a sector, while erase operation takes place to the resolution of a block within a sector. | 09-09-2010 |
| 20100226174 | MULTIPLE BIT PER CELL NON VOLATILE MEMORY APPARATUS AND SYSTEM HAVING POLARITY CONTROL AND METHOD OF PROGRAMMING SAME - A Multiple-bit per Cell (MBC) non-volatile memory apparatus, method, and system wherein a controller for writing/reading data to/from a memory array controls polarity of data by selectively inverting data words to maximize a number of bits to be programmed within (M−1) virtual pages and selectively inverts data words to minimize a number of bits to be programmed in an M | 09-09-2010 |
| 20100225370 | Frequency-Doubling Delay Locked Loop - A frequency multiplier circuit comprising a delay line receiving at one end thereof a reference clock for generating clock tap outputs from respective ones of a plurality of period matched delay elements; a clock combining circuit responsive to pairs of tap outputs for generating a rising and falling edge of an output clock pulse from respective ones of the pairs whereby the output clock period is less than the input clock period. | 09-09-2010 |
| 20100223435 | Method and Apparatus for Providing a Packet Buffer Random Access Memory - The present invention generally provides a packet buffer random access memory (PBRAM) device including a memory array, a plurality of input ports, and a plurality of serial registers associated with the input ports. The plurality of input ports permit multiple devices to concurrently access the memory in a non-blocking manner. The serial registers enable receiving data from the input ports and concurrently packet data to the memory array. The memory performs all management of network data queues so that all port requests can be satisfied within the real-time constraints of network packet switching. | 09-02-2010 |
| 20100214812 | STACKED SEMICONDUCTOR DEVICES INCLUDING A MASTER DEVICE - A stack that includes non-volatile memory devices is disclosed. One of the non-volatile memory devices in the stack is a master device, and the remaining memory device or devices is a slave device(s). | 08-26-2010 |
| 20100213994 | Charge Pump for PLL/DLL - A charge pump for use in a Phase Locked Loop/Delay Locked Loop minimizes static phase error through the use of an operational amplifier. The operational amplifier also mitigates the effects of low power supply voltage. | 08-26-2010 |
| 20100199486 | Flow-Fill Spacer Structures for Flat Panel Display Device - A preferred embodiment of the invention is directed to support structures such as spacers used to provide a uniform distance between two layers of a device. In accordance with a preferred embodiment, the spacers may be formed utilizing flow-fill deposition of a wet film in the form of a precursor such as silicon dioxide. Formation of spacers in this manner provides a homogenous amorphous support structure that may be used to provide necessary spacing between layers of a device such as a flat panel display. | 08-12-2010 |
| 20100199057 | INDEPENDENT LINK AND BANK SELECTION - Provided is a memory system that has a plurality of memory banks and a plurality of link controllers. For each memory bank, there is first switching logic for receiving output for each link controller, and for passing on the output of only one of the link controllers to the memory bank. For each link controller, there is second switching logic for receiving an output of each memory bank, and for passing on the output of only one of the memory banks to the link controller. According to an embodiment of the invention, there is switch controller logic for controlling operation of both the first switching logic and the second switching logic to prevent simultaneous or overlapping access by multiple link controllers to the same memory bank, and for preventing simultaneous or overlapping access to multiple banks by the same link controller. | 08-05-2010 |
| 20100189098 | TELEPHONE OUTLET WITH PACKET TELEPHONY ADAPTOR, AND A NETWORK USING SAME - An outlet for a Local Area Network (LAN), containing an integrated adapter that converts VoIP to and from analog telephony, and a standard telephone jack (e.g. RJ-11 in North America) for connecting an ordinary analog (POTS) telephone set. Such an outlet allows using analog telephone sets in a VoIP environment, eliminating the need for an IP telephone set or external adapter. The outlet may also include a hub that allows connecting both an analog telephone set via an adapter, as well as retaining the data network connection, which may be accessed by a network jack. The invention may also be applied to a telephone line-based data networking system. In such an environment, the data networking circuitry as well as the VoIP/POTS adapters are integrated into a telephone outlet, providing for regular analog service, VoIP telephony service using an analog telephone set, and data networking as well. In such a configuration, the outlet requires two standard telephone jacks and a data-networking jack. Outlets according to the invention can be used to retrofit existing LAN and in-building telephone wiring, as well as original equipment in new installation. | 07-29-2010 |
| 20100182838 | FLASH MEMORY DEVICE WITH DATA OUTPUT CONTROL - An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links. | 07-22-2010 |
| 20100182059 | SIMPLIFIED BIAS CIRCUITRY FOR DIFFERENTIAL BUFFER STAGE WITH SYMMETRIC LOADS - A biasing circuit for biasing differential delay elements is provided. The circuit is a feedback-free circuit consisting of a CMOS output stage having a P-type transistor and an N-type transistor, with a diode connected transistor between the P-type transistor and the N-type transistor, the output stage receiving the control voltage as input, and producing the V | 07-22-2010 |
| 20100174932 | CIRCUIT, SYSTEM AND METHOD FOR SELECTIVELY TURNING OFF INTERNAL CLOCK DRIVERS - The present invention includes a circuit, system and method for selectively turning off internal clock drivers to reduce operating current. The present invention may be used to reduce power consumption by reducing operating current in a memory device. Operating current may be reduced by turning off internal clock drivers that deliver a clock signal during selected periods of time. According to an embodiment of clock control circuitry of the present invention, an internal clock is disabled if a no operation command is detected during periods of time when no read or write burst operation is taking place. Methods, memory devices and computer systems including the clock control circuitry and its functionality are also disclosed. | 07-08-2010 |
| 20100174854 | NON-VOLATILE MEMORY WITH DYNAMIC MULTI-MODE OPERATION - A method and system for extending the life span of a flash memory device. The flash memory device is dynamically configurable to store data in the single bit per cell (SBC) storage mode or the multiple bit per cell (MBC) mode, such that both SBC data and MBC data co-exist within the same memory array. One or more tag bits stored in each page of the memory is used to indicate the type of storage mode used for storing the data in the corresponding subdivision, where a subdivision can be a bank, block or page. A controller monitors the number of program-erase cycles corresponding to each page for selectively changing the storage mode in order to maximize lifespan of any subdivision of the multi-mode flash memory device. | 07-08-2010 |
| 20100171521 | SYSTEM FOR TRANSMISSION LINE TERMINATION BY SIGNAL CANCELLATION - A communication system having first and second states for use with a shared transmission line composed of at least two conductors and composed of first and second transmission line segments connected to each other at a single connection point. In the first state, a termination is coupled to the single connection point and is operative to at least attenuate a signal propagated between the first and second segments. In the second state, a driver is coupled to the connection point and is operative to conduct a signal over the first and second segments. | 07-08-2010 |
| 20100162053 | ERROR DETECTION METHOD AND A SYSTEM INCLUDING ONE OR MORE MEMORY DEVICES - A system including one or more memory devices, and an error detection and correction method are disclosed. A memory device of the system includes an input for receiving a packet. A first portion of the packet may include at least one command byte, and a second portion of the packet may include parity bits to facilitate command error detection. The memory device may include an error manager configured to detect, based on the parity bits, whether an error exists in the at least one command byte, and circuitry configured to provide the packet to the error manager. | 06-24-2010 |
| 20100157714 | APPARATUS AND METHOD FOR SELF-REFRESHING DYNAMIC RANDOM ACCESS MEMORY CELLS - A dynamic random access memory (DRAM) having DRAM cells coupled to wordlines and bitlines. In a self-refresh mode, the cells coupled with the even numbered rows retain main data previously stored therein and the assistant data, which is logically opposite to the main data, is overwritten into the cells coupled with the wordlines of the odd numbered rows. When the DRAM enters the self-refresh mode, a starting refresh address for the self-refresh mode is detected. If the detected starting refresh address does not match with a predetermined correct address set for the self-refresh operation mode, a dummy refresh cycle will be established in an entry-burst self-refresh period. During the dummy refresh cycle, a dummy refresh command is added to increment an internal row address counter that provides row addresses for self-refreshing the cells of the selected wordlines within the cell array. | 06-24-2010 |
| 20100157684 | FLASH MEMORY PROGRAM INHIBIT SCHEME - A method for minimizing program disturb in Flash memories. To reduce program disturb in a NAND Flash memory cell string where no programming from the erased state is desired, a local boosted channel inhibit scheme is used. In the local boosted channel inhibit scheme, the selected memory cell in a NAND string where no programming is desired, is decoupled from the other cells in the NAND string. This allows the channel of the decoupled cell to be locally boosted to a voltage level sufficient for inhibiting F-N tunneling when the corresponding wordline is raised to a programming voltage. Due to the high boosting efficiency, the pass voltage applied to the gates of the remaining memory cells in the NAND string can be reduced relative to prior art schemes, thereby minimizing program disturb while allowing for random page programming. | 06-24-2010 |
| 20100156483 | DELAY LOCKED LOOP CIRCUIT - The disclosure relates to phase detectors. Charge up and charge down signals that are generated by a phase detector cause i) following detection of a first edge of a reference clock signal, switching on of a switching transistor of sink current; ii) following detection of an edge of a feedback clock signal falling within less than 180 degrees from the first edge, switching on of a switching transistor of source current and switching off of the switching transistor of sink current; and iii) following detection of an edge of another reference signal at a point in time about midway between the first edge and a next similar edge of the reference clock signal has past, switching off of the switching transistor of source current while maintaining the switching transistor of sink current switched off. | 06-24-2010 |
| 20100154022 | LOCAL AREA NETWORK OF SERIAL INTELLIGENT CELLS - A serial intelligent cell (SIC) and a connection topology for local area networks using Electrically-conducting media. A local area network can be configured from a plurality of SIC's interconnected so that all communications between two adjacent SIC's is both point-to-point and bidirectional. Each SIC can be connected to one or more other SIC's to allow redundant communication paths. Communications in different areas of a SIC network are independent of one another, so that, unlike current bus topology and star topology, there is no fundamental limit on the size or extent of a SIC network. Each SIC can optionally be connected to one or more data terminals, computers, telephones, sensors, actuators, etc., to facilitate interconnectivity among such devices. Networks according to the present invention can be configured for a variety of applications, including a local telephone system, remote computer bus extender, multiplexers, PABX/PBX functionality, security systems, and local broadcasting services. The network can use dedicated wiring, as well as existing wiring as the in-house telephone or electrical wiring. | 06-17-2010 |
| 20100142304 | DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR SELF-REFRESHING MEMORY CELLS WITH TEMPERATURE COMPENSATED SELF-REFRESH - A dynamic random access memory (DRAM) device has an array of DRAM cells of rows by columns. Each DRAM cell of the array is coupled with a wordline of a corresponding row and a bitline of a corresponding column. An entry into and an exit from the self-refresh mode are detected by a mode detector and a self-refresh mode signal is provided. An oscillation circuit generates in response to the self-refresh mode signal generates a basic time period. A first frequency divider/time period multiplier changes the basic time period in accordance with a process variation factor relating to the DRAM device. A second frequency divider/time period multiplier further changes the changed time period in accordance with a temperature change factor relating to the DRAM device. In the self-refresh mode, data stored in the DRAM cells is refreshed. In accordance with the two factors, the DRAM devices perform and achieve reliable self-refresh for variable DRAM cell retention time. | 06-10-2010 |
| 20100135480 | NETWORK COMBINING WIRED AND NON-WIRED SEGMENTS - A local area network ( | 06-03-2010 |
| 20100135479 | NETWORK COMBINING WIRED AND NON-WIRED SEGMENTS - A local area network ( | 06-03-2010 |
| 20100135191 | Network Combining Wired and Non-Wired Segments - A network ( | 06-03-2010 |
| 20100135092 | CIRCUIT AND METHOD FOR TESTING MULTI-DEVICE SYSTEMS - A method and system for high speed testing of memories in a multi-device system, where individual devices of the multi-device system are arranged in a serial interconnected configuration. High speed testing is achieved by first writing test pattern data to the memory banks of each device of the multi-device system, followed by local test read-out and comparison of the data in each device. Each device generates local result data representing the absence or presence of a failed bit position in the device. Serial test circuitry in each device compares the local result data with global result data from a previous device. The test circuitry compresses this result of this comparison and provides it to the next device as an updated global result data. Hence, the updated global result data will represent the local result data of all the previous devices. | 06-03-2010 |
| 20100135089 | METHOD AND APPARATUS FOR SYNCHRONIZATION OF ROW AND COLUMN ACCESS OPERATIONS - A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit line pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled. | 06-03-2010 |
| 20100122104 | APPARATUS AND METHOD FOR INTERFACING TO A MEMORY - In a memory interface, a delay locked loop (DLL) is added to the system in order to provide an accurate, PVT insensitive translation of the drive clocks into the write data eye. Adding a master-slave DLL to the system provides an accurate, PVT insensitive translation of the echo clocks into the read data eye. Solidifying the timing critical drive and receive logic which directly interfaces to the I/O buffers reduces the pin-to-pin skews. Utilizing clock phase outputs of the DLL in the solidified drive and receive logic blocks reduces further the skew between the clock and related data signals, and also removes the reliance on a differential clock. The system allows a much more relaxed constraint on clock duty cycle. Design of circuitry within the solidified drive and receive logic blocks permits simple logic modeling for fit within an ASIC flow. Physical design of the solidified drive and receive logic blocks permits simple fit within ASIC place and route flows for increased ease of implementation and ease of reuse. | 05-13-2010 |
| 20100118482 | SYSTEM INCLUDING A PLURALITY OF ENCAPSULATED SEMICONDUCTOR CHIPS - A solid state drive is disclosed. The solid state drive includes a circuit board having opposing first and second surfaces. A plurality of semiconductor chips are attached to the first surface of the circuit board of the solid state drive, and the plurality of semiconductor chips of the solid state drive include at least one memory chip that is at least substantially encapsulated in a resin. An in-line memory module-type form factor circuit board is also disclosed. The in-line memory module-type form factor circuit board has opposing first and second surfaces. A plurality of semiconductor chips are attached to the first surface of the in-line memory module-type form factor circuit board, and these semiconductor chips include at least one memory chip that is at least substantially encapsulated in a resin. | 05-13-2010 |
| 20100117709 | VOLTAGE LEVEL SHIFTER AND BUFFER USING SAME - A voltage level shifter with an input transistor pair, a cross-coupled load chain transistor pair and a pair of current sources, effects reduced power consumption through the use of the cross-coupled load chain transistor pair to minimize the DC current component present in known voltage level shifters. In specific embodiments, feedback elements may be used to minimize delays in signal transitions. A reference voltage that corresponds to a current capability of the input transistor pair may be used to regulate the current sources in the load chain. Changes in a swing of the input signal voltage received by the input transistor pair may be reflected in corresponding changes to the reference voltage. The voltage level shifter may be of particular use in a buffer. | 05-13-2010 |
| 20100117698 | TIMING VERNIER USING A DELAY LOCKED LOOP - A method for synchronizing a plurality of programmable timing verniers with a reference pulse signal, each of the verniers being programmable to one of a plurality of timing steps within a delay range determined by a control signal applied to a bias input. A first and second control vernier is selected from the plurality of verniers, the first control vernier is programmed to a first delay, and the second control vernier is programmed to a second delay. The first and second control verniers are triggered together to generate respective first and second delay signals. A difference pulse signal is generated with a duty cycle corresponding to a difference between the generated first delay signal and second delay signal. The duty cycle of the pulse signal is compared to a duty cycle of the reference pulse signal to generate a difference signal pulse. The difference signal pulse is coupled to the bias input of the verniers to adjust the delay range, such that the duty cycle of the difference signal approaches the duty cycle of the reference pulse signal. In one embodiment there is provided a circuit for implementing the method. | 05-13-2010 |
| 20100115217 | DATA MIRRORING IN SERIAL-CONNECTED MEMORY SYSTEM - A method of data mirroring in a serial-connected memory system between a first and a second memory device. A bypass command is issued to the first memory device, then a write data packet is provided to the first and second memory devices, and then a write data packet command is provided to the first and second memory devices by wherein the write data packet is passed to the second memory device through the first memory device. Mirroring of the write data packet into the first and second memory devices is thereby achieved. ECC (error correction codes) within spare fields provide means for recovering data after failure. The serial-connected memory system is especially useful for implementing SSD (solid-state disk) memory systems. | 05-06-2010 |
| 20100115214 | BRIDGING DEVICE HAVING A CONFIGURABLE VIRTUAL PAGE SIZE - A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. The bridge device has memory organized as banks, where each bank is configured to have a virtual page size that is less than the maximum physical size of the page buffer. Therefore only a segment of data corresponding to the virtual page size stored in the page buffer is transferred to the bank. The virtual page size of the banks is provided in a virtual page size (VPS) configuration command having an ordered structure where the position of VPS data fields containing VPS configuration codes in the command correspond to different banks which are ordered from a least significant bank to a most significant bank. The VPS configuration command is variable in size, and includes only the VPS configuration codes for the highest significant bank being configured and the lower significant banks. | 05-06-2010 |
| 20100115172 | BRIDGE DEVICE HAVING A VIRTUAL PAGE BUFFER - A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. The bridge device has a virtual page buffer corresponding to each discrete memory device for storing read data from the discrete memory device, or write data from an external device. The virtual page buffer is configurable to have a size up to the maximum physical size of the page buffer of a discrete memory device. The page buffer is then logically divided into page segments, where each page segment corresponds in size to the configured virtual page buffer size. By storing read or write data in the virtual page buffer, both the discrete memory device and the external device can operate to provide or receive data at different data rates to maximize the performance of both devices. | 05-06-2010 |
| 20100109722 | INTIALIZATION CIRCUIT FOR DELAY LOCKED LOOP - An initialization circuit in a delay locked loop ensures that after power up or other reset clock edges are received by a phase detector in the appropriate order for proper operation. After reset of the delay locked loop, the initialization circuit assures that at least one edge of a reference clock is received prior to enabling the phase detector to increase (or decrease) the delay in a delay line. After at least one edge of a feedback clock is received, the initialization circuit enables the phase detector to decrease (or increase) the delay in a delay line. | 05-06-2010 |
| 20100103928 | TELEPHONE OUTLET WITH PACKET TELEPHONY ADAPTER, AND A NETWORK USING SAME - An outlet for a Local Area Network (LAN), containing an integrated adapter that converts VoIP to and from analog telephony, and a standard telephone jack (e.g. RJ-11 in North America) for connecting an ordinary analog (POTS) telephone set. Such an outlet allows using analog telephone sets in a VoIP environment, eliminating the need for an IP telephone set or external adapter. The outlet may also include a hub that allows connecting both an analog telephone set via an adapter, as well as retaining the data network connection, which may be accessed by a network jack. The invention may also be applied to a telephone line-based data networking system. In such an environment, the data networking circuitry as well as the VoIP/POTS adapters are integrated into a telephone outlet, providing for regular analog service, VoIP telephony service using an analog telephone set, and data networking as well. In such a configuration, the outlet requires two standard telephone jacks and a data-networking jack. Outlets according to the invention can be used to retrofit existing LAN and in-building telephone wiring, as well as original equipment in new installation. | 04-29-2010 |
| 20100097869 | MEMORY SYSTEM HAVING INCORRUPTED STROBE SIGNALS - A memory system circuit and method therefor are disclosed. The circuit is adapted to detect a transition in a data timing signal from an indeterminate logic level to a selected one of a high logic level and a low logic level. The circuit includes a comparator having a first input, a second input and an output. The first and second inputs receive the data timing signal and a reference voltage respectively. The output changes logic levels in response to a change in polarity of a voltage difference between the voltage of the timing signal and the reference voltage. The reference voltage is sufficiently closer to the selected one of the logic levels as compared to the other of the logic levels so as to at least substantially prevent potential false positive detections. | 04-22-2010 |
| 20100091538 | BRIDGE DEVICE ARCHITECTURE FOR CONNECTING DISCRETE MEMORY DEVICES TO A SYSTEM - Bridge device architecture for connecting discrete memory devices is disclosed. A bridge device is used in conjunction with a composite memory device including at least one discrete memory device. The bridge device comprises a local control interface connected to the at least one discrete memory device, a local input/output interface connected to the at least one discrete memory device, and a global input/output interface interposed between the local control interface and the local input/output interface. The global input/output interface receives and provides global memory control signals and also receives and provides write data to and read data from the at least one discrete memory device. | 04-15-2010 |
| 20100091536 | COMPOSITE MEMORY HAVING A BRIDGING DEVICE FOR CONNECTING DISCRETE MEMORY DEVICES TO A SYSTEM - A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices in response to global memory control signals having a format or protocol that is incompatible with the memory devices. The discrete memory devices can be commercial off-the-shelf memory devices or custom memory devices which respond to native, or local memory control signals. The global and local memory control signals include commands and command signals each having different formats. The composite memory device includes a system in package including the semiconductor dies of the discrete memory devices and the bridge device, or can include a printed circuit board having packaged discrete memory devices and a packaged bridge device mounted thereto. | 04-15-2010 |
| 20100083028 | SERIAL-CONNECTED MEMORY SYSTEM WITH DUTY CYCLE CORRECTION - Systems and methods for correcting clock duty cycle are provided for application in serial-connected devices operating as slave devices. A master device provides a clock to the first slave device, and each slave device passes the clock to the next slave device in turn, and the last slave device returns the clock to the master device. The master device compares the outgoing clock to the returned clock and determines if a duty cycle correction is needed. If so, the master device generates and outputs commands for the slave devices to perform duty cycle adjustment. Each of the slave devices has a circuit for performing duty cycle adjustment. In some implementations, each slave device is a memory device, and the master device is a memory controller. | 04-01-2010 |
| 20100083027 | SERIAL-CONNECTED MEMORY SYSTEM WITH OUTPUT DELAY ADJUSTMENT - Systems and methods for performing output delay adjustment are provided for application in serial-connected devices operating as slave devices. A master device provides a clock to the first slave device, and each slave device passes the clock to the next slave device in turn, and the last slave device returns the clock to the master device. The master device compares the outgoing clock to the returned clock and determines if an output delay adjustment is needed. If so, the master device generates and outputs commands for the slave devices to perform output delay adjustment. The slave devices apply the output delay to the clock signal, but may also apply the delay to other output signals. Each of the slave devices has a circuit for performing output delay adjustment. In some implementations, each slave device is a memory device, and the master device is a memory controller. | 04-01-2010 |
| 20100070709 | CACHE FILTERING METHOD AND APPARATUS - A method and apparatus used within memory and data processing that reduces the number of references allowed in processor cache by using active rows to reject references that are less frequently used from the cache. Comparators within a memory controller are used to generate a signal indicative of a row hit or miss, which signal is then applied to one or more demultiplexers to enable or disable transfer of a memory reference to processor cache locations. The cache may be level one (L1) or level two (L2) caches including data and or instructions or some combination of L1, L2, data, and instructions. | 03-18-2010 |
| 20100066439 | SYSTEMS AND METHODS FOR MINIMIZING STATIC LEAKAGE OF AN INTEGRATED CIRCUIT - A leakage manager system for adequately minimizing static leakage of an integrated circuit is disclosed. The leakage manager system includes a generator configured to generate a control signal to be applied to a sleep transistor. A monitor is configured to determine whether to adjust the control signal to adequately minimize the static leakage. In some embodiments, the monitor includes an emulated sleep transistor. A regulator is configured to adjust the control signal depending on the determination. | 03-18-2010 |
| 20100064116 | METHOD AND SYSTEM FOR PACKET ENCRYPTION - A data processor and a method for processing data is disclosed. The processor has an input port for receiving packets of data to be processed. A master controller acts to analyse the packets and to provide a header including a list of processes to perform on the packet of data and an ordering thereof. The master controller is programmed with process related data relating to the overall processing function of the processor. The header is appended to the packet of data. The packet with the appended header information is stored within a buffer. A buffer controller acts to determine for each packet stored within the buffer based on the header within the packet a next processor to process the packet. The controller then provides the packet to the determined processor for processing. The processed packet is returned with some indication that the processing is done. For example, the process may be deleted from the list of processes. The buffer controller repeatedly makes a determination of a next process until there is no next process for a packet at which time it is provided to an output port. | 03-11-2010 |
| 20100061172 | TEMPERATURE DETECTOR IN AN INTEGRATED CIRCUIT - A temperature detector in an integrated circuit comprises a temperature-dependent voltage generator, a ring oscillator, a timer and a clock-driven recorder. The temperature-dependent voltage generator is configured to generate at least one temperature-dependent voltage. The ring oscillator is configured to generate a clock signal, which is affected by one of the at least one temperature-dependent voltage. The timer is configured to generate a time-out signal, which is affected by one of the temperature-dependent voltage. The clock-driven recorder has a clock input terminal in response to the clock signal and time-out signal. | 03-11-2010 |
| 20100060347 | BIAS GENERATOR PROVIDING FOR LOW POWER, SELF-BIASED DELAY ELEMENT AND DELAY LINE - An improved bias generator incorporates a reference voltage and/or a reference current into the generation of bias voltages. In some cases, the output of a biased delay element has a constant voltage swing. A delay line of such constant output voltage swing delay elements may be shown to provide reduced power consumption compared to some known self-biased delay lines. Furthermore, in other cases, providing the reference current to a novel bias generator allows a delay line of delay elements biased by such a novel bias generator to show reduced sensitivity to operating conditions, reduced sensitivity to variation in process parameters and improved signal quality, thereby providing more robust operation. | 03-11-2010 |
| 20100039148 | APPARATUS AND METHOD FOR MODELING COARSE STEPSIZE DELAY ELEMENT AND DELAY LOCKED LOOP USING SAME - A reference circuit and method for mitigating switching jitter and delay-locked loop (DLL) using same are provided. The reference circuit and method determine a number of steps of a fine delay line (FDL) that are equivalent to a step of a coarse delay line (CDL). Switching jitter of the DLL is reduced since the delay of the step of the CDL that is switched when on an underflow or overflow condition of the FDL is detected is equivalent to the delay of the provided number of steps of the FDL. | 02-18-2010 |
| 20100033216 | SYNCHRONIZATION CIRCUIT AND METHOD WITH TRANSPARENT LATCHES - A synchronization circuit for re-synchronizing data from an input clock to an output clock is presented. The first transparent latch receives data synchronized to an input clock. A second transparent latch receives data from the first transparent latch and outputs data dependent on a delayed output clock which is the output clock delayed by an insertion delay. An output latch receives data from the second transparent latch and synchronizes data to the output clock. | 02-11-2010 |
| 20100030951 | NONVOLATILE MEMORY SYSTEM - A Flash memory system is implemented in a system-in-package (SIP) enclosure, the system comprising a Flash memory controller and a plurality Flash memory devices. An SIP relates to a single package or module comprising a number of integrated circuits (chips). The Flash memory controller is configured to interface with an external system and a plurality of memory devices within the SIP. The memory devices are configured in a daisy chain cascade arrangement, controlled by the Flash memory controller through commands transmitted through the daisy chain cascade. | 02-04-2010 |
| 20100030949 | Non-volatile memory devices and control and operation thereof - An improved non-volatile erase block memory device apparatus and method is described that incorporates an improved addressing scheme to provide for extended addressing allowing redundant erase blocks that are not utilized to repair general use erase blocks of the main memory array to be accessed and utilized as additional storage space by an end user. The additional storage space formed by the unused redundant erase blocks and the specified storage space of the main memory array is presented to the end user as a single contiguous address space. Additionally, the redundant erase blocks can be utilized to repair any damaged erase block in the memory array of the non-volatile erase block memory or Flash memory device regardless of bank placement. | 02-04-2010 |
| 20100011174 | MIXED DATA RATES IN MEMORY DEVICES AND SYSTEMS - Mixed data rates in a memory system is disclosed. The system includes at least one semiconductor memory device and another device defining a ring topology. The semiconductor memory device includes input circuitry for receiving a clock signal having a frequency at least substantially equal to a frequency x. A first set of circuit elements are each clocked by a same or respective first internal signal having a frequency at least substantially equal to the frequency x. A second set of circuit elements are each clocked by a same or a respective second internal signal having a frequency at least substantially double that of the frequency x. | 01-14-2010 |
| 20100002504 | Mulitple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same - A Multiple-bit per Cell (MBC) non-volatile memory apparatus, method, and system wherein a controller for writing/reading data to/from a memory array controls polarity of data by selectively inverting data words to maximize a number of bits to be programmed within (M−1) virtual pages and selectively inverts data words to minimize a number of bits to be programmed in an M | 01-07-2010 |
| 20090315591 | POWER UP CIRCUIT WITH LOW POWER SLEEP MODE OPERATION - A power up circuit that having reduced power consumption during power saving modes, while maintaining an active flag signal indicating that the power supply voltage is satisfactory. This is achieved by turning off the power up circuit during the power saving mode, and using a status holding circuit to maintain the active flag signal in response to the power down signal. The status holding circuit is responsive to an internal node of the power up circuit for generating the active flag signal when the internal node has reached a predetermined level. The power down signal can be one or both a sleep mode signal and a deep power down signal. The status holding comprises an override circuit for maintaining the active flag signal in the power saving mode, and a restore circuit for rapidly resetting at least the internal node of the power up circuit upon exit of the power saving mode. | 12-24-2009 |
| 20090303824 | DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR SELF-REFRESHING MEMORY CELLS - A dynamic random access memory (DRAM) device having memory cells is operated in a self-refresh mode and a normal mode. A mode detector provides a self-refresh mode signal in the self-refresh mode of operation. It includes a free-running oscillator for generating an oscillation signal independent of the self-refresh mode signal. In response to the oscillation signal, a self-request controller provides a self-refresh request signal in the self-refresh mode. The self-refresh signal is asynchoronized with the self-fresh mode signal and is provided to an address circuit to select a wordline for refreshing the memory cells thereof. The self-refresh request controller includes logic circuitry for arbitrating timing between initial active edges of the oscillation signal and the self-refresh mode signal and providing the self-refresh request and ceasing it, regardless of conflict between the self-refresh mode signal and the oscillation signal upon self-refresh mode entry and exit. The DRAM devices perform and achieve reliable self-refresh for variable DRAM cell retention time. | 12-10-2009 |
| 20090288853 | ADAPTER FOR MOUNTING A FACEPLATE OF A FIRST STYLE TO AN ELECTRICAL OUTLET CAVITY OF A SECOND STYLE - Apparatus for coupling a signal between a wiring and a device. Junction box mounting is popular in North America, whereas cavity mounting is popular in Europe and the Middle East. The apparatus includes an adapter and provides universal mounting for specialized faceplates which are designed and intended for junction box mounting. The adapter features clamps for gripping the inner surface of a wall cavity or sleeve and a plate for mounting an faceplate designed for junction box mounting. The plate has mounting points with a nominal center-to-center distance of 3¼ inches, corresponding to the requirements of junction box mounting. | 11-26-2009 |
| 20090279375 | VOLTAGE DOWN CONVERTER FOR HIGH SPEED MEMORY - A voltage down converter (VDC) applicable to high-speed memory devices. The VDC includes a steady driver and active driver along with at least one additional transistor. The steady driver and active driver are coupled by a transistor switch during device start-up to provide fast ramp-up to operating voltage and current. After start-up, the steady driver and active drive function to maintain a steady operating voltage and current. An additional transistor is digitally controlled to drive up operating voltage and current upon issuance of an active command representing read, write, and/or refresh of memory. In this manner, the additional transistor provides fast compensation for fluctuations in operating voltage and current brought on by activity in the memory array. | 11-12-2009 |
| 20090279366 | HYBRID SOLID-STATE MEMORY SYSTEM HAVING VOLATILE AND NON-VOLATILE MEMORY - A hybrid solid-state memory system is provided for storing data. The solid-state memory system comprises a volatile solid-state memory, a non-volatile solid-state memory, and a memory controller. Further, a method is provided for storing data in the solid-state memory system. The method comprises the following steps. A write command is received by the memory controller. Write data is stored in the volatile memory in response to the write command. Data is transferred from the volatile memory to the non-volatile memory in response to a data transfer request. | 11-12-2009 |
| 20090278591 | POWER SUPPLIES IN FLASH MEMORY DEVICES AND SYSTEMS - Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level. | 11-12-2009 |
| 20090273973 | MULTI-LEVEL CELL ACCESS BUFFER WITH DUAL FUNCTION - An access buffer, such as page buffer, for writing to non-volatile memory, such as Flash, using a two-stage MLC (multi-level cell) operation is provided. The access buffer has a first latch for temporarily storing the data to be written. A second latch is provided for reading data from the memory as part of the two-stage write operation. The second latch has an inverter that participates in the latching function when reading from the memory. The same inverter is used to produce a complement of an input signal being written to the first latch with the result that a double ended input is used to write to the first latch. | 11-05-2009 |
| 20090265589 | DATA CHANNEL TEST APPARATUS AND METHOD THEREOF - A system includes a plurality of devices that are connected in series and a controller that communicates with the devices. Each of the devices has a plurality of input ports and corresponding output ports. The outputs of one device and the inputs of a next device are interconnected. The controller is coupled to the first device and the last device of the series-connection. The controller applies a test pattern to the plurality of input ports at the first device connected in series, by the controller. Each data channel defines a data path between corresponding pairs of input and output ports of the first and last devices. A data channel is enabled if the test pattern is detected at its corresponding output port. | 10-22-2009 |
| 20090262592 | METHOD AND APPARATUS FOR SYNCHRONIZATION OF ROW AND COLUMN ACCESS OPERATIONS - A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit line pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled. | 10-22-2009 |
| 20090231931 | LOW POWER MEMORY ARCHITECTURE - A memory architecture and circuits for minimizing current leakage in the memory array. Subdivisions of the memory array each have local power grids that can be selectively connected to power supplies, such that only an accessed subdivision will receive power to execute the memory access operation. The memory array can further include databuses which are precharged to one voltage during idle times and a second voltage during active read cycles, which reduces leakage current in datapath circuitry connected to the databuses within the memory array blocks. | 09-17-2009 |
| 20090231928 | NON-VOLATILE SEMICONDUCTOR MEMORY WITH PAGE ERASE - In a nonvolatile memory, less than a full block may be erased as one or more pages. A select voltage is applied through pass transistors to each of plural selected wordlines and an unselect voltage is applied through pass transistor to each of plural unselected wordlines of a selected block. A substrate voltage is applied to the substrate of the selected block. A common select voltage may be applied to each selected wordline and the common unselect voltage may be applied to each unselected wordline. Select and unselect voltages may be applied to any of the wordlines of a select block. A page erase verify operation may be applied to a block having plural erased pages and plural nonerased pages. | 09-17-2009 |
| 20090198857 | SELECTIVE BROADCASTING OF DATA IN SERIES CONNECTED DEVICES - A method and system for the selective broadcasting of commands to a subset of a plurality of devices connected in series to a memory controller, where each of the plurality of devices has a unique identification number (ID). The memory controller designates the subset of devices to execute the command, excluding the non-selected devices from executing the command. The memory controller encodes the ID numbers of the designated devices into a single coded address, and sends the command along with the coded address in a packet to the series connected devices. Each device receives the packet in a serial bitstream and decodes the coded address using its ID number in order to determine whether it is selected or not. If the device is selected, the command is executed. Otherwise, the packet is forwarded without executing the command. | 08-06-2009 |
| 20090196103 | NON-VOLATILE MEMORY DEVICE HAVING CONFIGURABLE PAGE SIZE - A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted. | 08-06-2009 |
| 20090196102 | FLEXIBLE MEMORY OPERATIONS IN NAND FLASH DEVICES - A flash memory device having at least two bank, where the each bank has an independently configurable page size and core controller. The core controller is local to each bank, and governs memory access operations for the bank that include read, program and erase operations. Each core controller controls timing and activation of row circuits, column circuits, voltage generators, and local input/output path circuits for a corresponding memory access operation of the bank. Concurrent operations are executable in multiple banks to improve performance. Each bank has a page size that is configurable with page size configuration data such that only selected wordlines are activated in response to address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. | 08-06-2009 |
| 20090190386 | HYBRID CONTENT ADDRESSABLE MEMORY - A CAM device memory array having different types of memory cells is disclosed. A CAM device memory array is subdivided into at least two different portions, where each portion uses only one particular type of CAM cell, and each portion is dedicated to storing a particular type of data. In particular, at least one portion consists of binary CAM cells and the other portion consists of ternary CAM cells. The portions can be partitioned along the row, or matchline, direction or along the bitline direction. Since particular data formats only require predefined bit positions of a word of data to be ternary in value, the remaining binary bit positions can be stored in binary CAM cells. Therefore, the CAM device memory array will occupy an overall area that is less than memory arrays of the same density consisting exclusively of ternary CAM cells. | 07-30-2009 |
| 20090187798 | NONVOLATILE MEMORY HAVING NON-POWER OF TWO MEMORY CAPACITY - A nonvolatile memory having a non-power of two memory capacity is disclosed. The nonvolatile memory device includes at least one plane. The plane includes a plurality of blocks with each of the blocks divided into a number of pages and each of the blocks defined along a first dimension by a first number of memory cells for storing data, and along a second dimension of by a second number of memory cells for storing data. The nonvolatile memory has a non-power of two capacity proportionally related to a total number of memory cells in said plane. The nonvolatile memory also includes a plurality of row decoders. An at least substantially one-to-one relationship exists, in the memory device, for number of row decoders to number of pages. Each of the row decoders is configured to facilitate a read operation on an associated page of the memory device. | 07-23-2009 |
| 20090185442 | MEMORY SYSTEM AND METHOD WITH SERIAL AND PARALLEL MODES - Methods and systems are provided that allow the method of access to one or more memory banks to be performed using serial access, or using parallel access. In serial mode, each link operates as an independent serial link. In contrast, during serial mode, the links operate in common as a parallel link. Where input and output controls are received independently for each link for serial mode, a single set of input and output controls is used in common by all of the links during parallel mode. | 07-23-2009 |
| 20090185424 | DECODING CONTROL WITH ADDRESS TRANSITION DETECTION IN PAGE ERASE FUNCTION - Circuits and methods are provided for controlling multi-page erase operations in flash memory. The page address of each address of a multi-page erase operation is latched in wordline decoders. A page select reset generator circuit processes the block addresses of each address of the multi-page erase operation. In the event the addresses relate to pages in different blocks, then previously latched page addresses are reset. This avoids the incorrect circuit operation that will result should a multi-page erase operation include multiple pages in different blocks. | 07-23-2009 |
| 20090175103 | SEMICONDUCTOR MEMORY ASYNCHRONOUS PIPELINE - An asynchronously pipelined SDRAM has separate pipeline stages that are controlled by asynchronous signals. Rather than using a clock signal to synchronize data at each stage, an asynchronous signal is used to latch data at every stage. The asynchronous control signals are generated within the chip and are optimized to the different latency stages. Longer latency stages require larger delays elements, while shorter latency states require shorter delay elements. The data is synchronized to the clock at the end of the read data path before being read out of the chip. Because the data has been latched at each pipeline stage, it suffers from less skew than would be seen in a conventional wave pipeline architecture. Furthermore, since the stages are independent of the system clock, the read data path can be run at any CAS latency as long as the re-synchronizing output is built to support it. | 07-09-2009 |
| 20090175081 | NAND FLASH MEMORY HAVING MULTIPLE CELL SUBSTRATES - A NAND flash memory bank having a plurality of bitlines of a memory array connected to a page buffer, where NAND cell strings connected to the same bitline are formed in at least two well sectors. At least one well sector can be selectively coupled to an erase voltage during an erase operation, such that unselected well sectors are inhibited from receiving the erase voltage. When the area of the well sectors decrease, a corresponding decrease in the capacitance of each well sector results. Accordingly, higher speed erasing of the NAND flash memory cells relative to a single well memory bank is obtained when the charge pump circuit drive capacity remains unchanged. Alternately, a constant erase speed corresponding to a single well memory bank is obtained by matching a well segment having a specific area to a charge pump with reduced drive capacity. A reduced drive capacity charge pump will occupy less semiconductor chip area, thereby reducing cost. | 07-09-2009 |
| 20090164809 | POWER SUPPLY TESTING ARCHITECTURE - A power supply testing architecture for embedded sub-systems is described, where each embedded sub-system can have at least one testable internal voltage supply. A plurality of embedded sub-systems are organized into groups, where each group of sub-systems shares a common voltage test line connected to the internal voltage supplies of the sub-systems. Accordingly, the collective internal voltages of each group can be tested in parallel. A power control signal can disable the internal voltage supply of all the sub-systems to allow application of an external power to the common voltage test lines. Alternately, the sub-systems in each group can be tested sequentially, such that each enabled sub-system of the group has dedicated access to its common voltage test line. In such a scheme, dedicated power control signals are used to independently disable each sub-system of the groups. | 06-25-2009 |
| 20090161458 | CIRCUIT AND METHOD FOR TESTING MULTI-DEVICE SYSTEMS - A method and system for high speed testing of memories in a multi-device system, where individual devices of the multi-device system are arranged in a serial interconnected configuration. High speed testing is achieved by first writing test pattern data to the memory banks of each device of the multi-device system, followed by local test read-out and comparison of the data in each device. Each device generates local result data representing the absence or presence of a failed bit position in the device. Serial test circuitry in each device compares the local result data with global result data from a previous device. The test circuitry compresses this result of this comparison and provides it to the next device as an updated global result data. Hence, the updated global result data will represent the local result data of all the previous devices. | 06-25-2009 |
| 20090161451 | DUAL FUNCTION COMPATIBLE NON-VOLATILE MEMORY DEVICE - A dual function memory device architecture compatible with asynchronous operation and synchronous serial operation. The dual function memory device architecture includes one set of physical ports having two different functional assignments. Coupled between the physical ports and core circuits of the memory device are asynchronous and synchronous input and output signal paths or circuits. The signal paths include shared or dedicated buffers coupled to the ports, asynchronous and synchronous command decoders, a network of switches, and a mode detector. The mode detector determines the operating mode of the dual function memory device from a port, and provides the appropriate switch selection signal. The network of switches routes the input or output signals through the asynchronous or synchronous circuits in response to the switch selection signal. The appropriate command decoder interprets the input signals and provides common control logic with the necessary signals for initiating the corresponding operation. | 06-25-2009 |
| 20090154629 | CLOCK REPRODUCING AND TIMING METHOD IN A SYSTEM HAVING A PLURALITY OF DEVICES - A system includes a memory controller and a plurality of semiconductor devices that are series-connected. Each of the devices has memory core for storing data. The memory controller provides a clock signal for synchronizing the operations of the devices. Each device includes a phase-locked loop (PLL) that is selectively enabled or disabled by a PLL enable signal. In each group, the PLLs of a selected number of devices are enabled by PLL enable signals and the other devices are disabled. The enabled PLL provides a plurality of reproduced clock signals with a phase shift of a multiple of 90° in response to an input clock signal. The data transfer is synchronized with at least one of the reproduced clock signals. In the devices of disabled PLLs, the data transfer is synchronized with the input clock signal. The enabled PLL and disabled PLL cause the devices to be the source and the common synchronous clocking, respectively. The devices can be grouped. The devices of one group can be structured by multiple chip packages. | 06-18-2009 |
| 20090154285 | MEMORY CONTROLLER WITH FLEXIBLE DATA ALIGNMENT TO CLOCK - A system includes a memory controller and a plurality of memory devices that are connected in-series to the memory controller. The system operation is synchronous with clock that is provided in a fashion of source synchronous clock structure. The source synchronous clock structure includes a PLL (Phase-Locked Loop) that reshapes an incoming clock and a reshaped clock is provided. The PLL provides a shifted clock in phase of 90°. The phase-shifted clock and data are transmitted from the first device to the second device. Clock phase shift provides a center-edge clock with data to be transmitted. The devices are assigned with unique IDs. The least significant bit of the ID number of the last device is used for determination of clock alignment: edge- or center-aligned clock with data produced by the memory controller. | 06-18-2009 |
| 20090147569 | FLASH MEMORY PROGRAM INHIBIT SCHEME - A method for minimizing program disturb in Flash memories. To reduce program disturb in a NAND Flash memory cell string where no programming from the erased state is desired, a local boosted channel inhibit scheme is used. In the local boosted channel inhibit scheme, the selected memory cell in a NAND string where no programming is desired, is decoupled from the other cells in the NAND string. This allows the channel of the decoupled cell to be locally boosted to a voltage level sufficient for inhibiting F-N tunneling when the corresponding wordline is raised to a programming voltage. Due to the high boosting efficiency, the pass voltage applied to the gates of the remaining memory cells in the NAND string can be reduced relative to prior art schemes, thereby minimizing program disturb while allowing for random page programming. | 06-11-2009 |
| 20090147556 | LOW POWER MATCH-LINE SENSING CIRCUIT - A low power matchline sensing scheme where power is distributed according to the number of mismatching bits occurring on a matchline is disclosed. In particular, match decisions involving a larger number of mismatched bits consume less power compared to match decisions having a lesser number of mismatched bits. The low power matchline sensing scheme is based upon a precharge-to-miss sensing architecture, and includes a current control circuit coupled to each matchline of the content addressable memory array for monitoring the voltage level of the matchline during a search operation. The current control circuit provides a voltage control signal to the current source of the matchline to adjust the amount of current applied to the matchline in response to the voltage of the matchline. In other words, matchlines that are slow to reach the match threshold voltage due to the presence of one or more mismatching bits will receive less current than matchlines having no mismatching bits. Significant power reduction without compromising search speed is realized since matchlines carrying a match result are provided with the maximum amount of current. | 06-11-2009 |
| 20090138768 | DATA CHANNEL TEST APPARATUS AND METHOD THEREOF - A system includes a plurality of devices that are connected in series and a controller that communicates with the devices. Each of the devices has a plurality of input ports and corresponding output ports. The outputs of one device and the inputs of a next device are interconnected. The controller is coupled to the first device and the last device of the series-connection. The controller applies a test pattern to the plurality of input ports at the first device connected in series, by the controller. Each data channel defines a data path between corresponding pairs of input and output ports of the first and last devices. A data channel is enabled if the test pattern is detected at its corresponding output port. | 05-28-2009 |
| 20090135664 | METHOD AND APPARATUS FOR SYNCHRONIZATION OF ROW AND COLUMN ACCESS OPERATIONS - A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit line pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled. | 05-28-2009 |
| 20090122631 | DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR SELF-REFRESHING MEMORY CELLS WITH TEMPERATURE COMPENSATED SELF-REFRESH - A dynamic random access memory (DRAM) device has an array of DRAM cells of rows by columns. Each DRAM cell of the array is coupled with a wordline of a corresponding row and a bitline of a corresponding column. An entry into and an exit from the self-refresh mode are detected by a mode detector and a self-refresh mode signal is provided. An oscillation circuit generates in response to the self-refresh mode signal generates a basic time period. A first frequency divider/time period multiplier changes the basic time period in accordance with a process variation factor relating to the DRAM device. A second frequency divider/time period multiplier further changes the changed time period in accordance with a temperature change factor relating to the DRAM device. In the self-refresh mode, data stored in the DRAM cells is refreshed. In accordance with the two factors, the DRAM devices perform and achieve reliable self-refresh for variable DRAM cell retention time. | 05-14-2009 |
| 20090103384 | APPARATUS AND METHOD FOR SELF-REFRESHING DYNAMIC RANDOM ACCESS MEMORY CELLS - A dynamic random access memory (DRAM) having DRAM cells coupled to wordlines and bitlines. In a self-refresh mode, the cells coupled with the even numbered rows retain main data previously stored therein and the assistant data, which is logically opposite to the main data, is overwritten into the cells coupled with the wordlines of the odd numbered rows. When the DRAM enters the self-refresh mode, a starting refresh address for the self-refresh mode is detected. If the detected starting refresh address does not match with a predetermined correct address set for the self-refresh operation mode, a dummy refresh cycle will be established in an entry-burst self-refresh period. During the dummy refresh cycle, a dummy refresh command is added to increment an internal row address counter that provides row addresses for self-refreshing the cells of the selected wordlines within the cell array. | 04-23-2009 |
| 20090103383 | DYNAMIC RANDOM ACCESS MEMORY WITH FULLY INDEPENDENT PARTIAL ARRAY REFRESH FUNCTION - A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application. | 04-23-2009 |
| 20090103378 | SINGLE-STROBE OPERATION OF MEMORY DEVICES - An arrangement of memory devices and a controller is based on an interface with a reduced pin count relative to a known memory device and controller arrangement. Facilitating the reduced pin count interface the reduction of multiple strobe signal to a single strobe signal. In addition, a packet header transmitted on the data bus followed by a payload, includes an encoded indication of the type of the payload. Aspects of the present application relate to providing a traditional memory device with external logic devices, where the logic devices handle the single strobe and the packet header, thereby permitting single strobe operation. | 04-23-2009 |
| 20090073768 | MEMORY WITH OUTPUT CONTROL - An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. | 03-19-2009 |
