| 20090081109 | GaN CRYSTAL SHEET - A method forms a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860° C. and approximately 870° C. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863° C., and the working pressure is within the range of 0.05 Pa and 2.5 Pa. Application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed. | 03-26-2009 |
