MK ELECTRON CO., LTD.
|MK ELECTRON CO., LTD. Patent applications|
|Patent application number||Title||Published|
|20140203207||ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD OF MANUFACTURING THE SAME - An anode active material for a lithium secondary battery having high-capacity and high-efficient charging/discharging characteristics. The anode active material includes silicon single phases, and silicon-metal alloy phases distributed around the silicon single phases. The silicon single phases have a fine structure in which crystalline particles obtained through rapid-cooling solidification are thermally treated to be grown to crystal grains.||07-24-2014|
|20140199594||ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD OF MANUFACTURING THE SAME - An anode active material for a lithium secondary battery having high-capacity and high-efficient charge/discharge characteristics. The anode active material includes silicon single phases; and silicon-metal alloy phases surrounding the silicon single phases. A dopant is distributed in the anode active material, and the silicon single phases are formed through rapid-cooling solidification, and the silicon single phases have a fine microstructure due to the dopant.||07-17-2014|
|20140023928||ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND SECONDARY BATTERY INCLUDING THE SAME - An anode active material for a lithium secondary battery having a high capacity and a high efficiency of charge discharge characteristics. The anode active material includes a silicon mono-phase and an alloy phase formed of silicon with a metal element at least one selected from the group consisting of Ti, Ni, Cu, Fe, Mn, Al, Cr, Co, and Zn. The anode active material is a powder in which the silicon mono-phase is uniformly distributed in a matrix of the alloy phase, has particle size distribution defined as D0.1 and D0.9, and the value of D0.1-D0.9 is in a range from about 3 μm to about 15 μm.||01-23-2014|
|20130175688||TIN-BASED SOLDER BALL AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A tin(Sn)-based solder ball and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.2 to 4 wt. % silver(Ag), about 0.1 to 1 wt. % copper(Cu), about 0.001 to 0.3 wt. % aluminum(Al), about 0.001% to 0.1 wt. % germanium(Ge), and balance of tin and unavoidable impurities. The tin-based solder ball has a high oxidation resistance.||07-11-2013|
|20080308189||LEAD FREE SOLDER CONTAINING Sn, Ag AND Bi - A lead free solder is provided. The lead free solder includes about 1.5 wt % to about 2.5 wt % silver (Ag), about 3 wt % to about 6 wt % bismuth (Bi), about 0.005 wt % to about 0.1 wt % of a deoxidizing agent, and a balance of tin (Sn). The lead free solder has improved wettability, a lowered melting point, little or substantially no formation of oxidation layer in a solder bath, suppressed brittleness, improved thermal shock resistance and drop resistance.||12-18-2008|
|20080240975||AG-BASED ALLOY WIRE FOR SEMICONDUCTOR PACKAGE - An Ag-based alloy wire for a semiconductor package is highly reliable and can be fabricated with low costs. The Ag-based alloy wire includes 0.05˜5 wt % of at least one kind of a first additive ingredient selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os), gold (Au), and nickel (Ni), and Ag as a remainder.||10-02-2008|
|20080230915||SEMICONDUCTOR PACKAGE USING WIRES CONSISTING OF Ag OR Ag ALLOY - A semiconductor package using Ag or Ag alloy wire which can maintain superior reliability against a noble metal and lower its manufacturing cost is provided. The semiconductor package comprises a semiconductor substrate. A semiconductor chip is attached to the package substrate and has one or more pads which comprise a noble metal. And one or more wires are bonded so as to electrically connect the one or more pads and the package substrate and comprise Ag or Ag alloy.||09-25-2008|
Patent applications by MK ELECTRON CO., LTD.