| MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD Patent applications |
| Patent application number | Title | Published |
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| 20130122305 | INDIUM TIN OXIDE POWDER, PRODUCTION METHOD THEREFOR, TRANSPARENT CONDUCTIVE COMPOSITION, AND INDIUM TIN HYDROXIDE - One aspect of an indium tin oxide powder has a specific surface area of 55 m | 05-16-2013 |
| 20130122278 | POLYCRYSTALLINE SILICON INGOT MANUFACTURING APPARATUS, POLYCRYSTALLINE SILICON INGOT MANUFACTURING METHOD, AND POLYCRYSTALLINE SILICON INGOT - A polycrystalline silicon ingot manufacturing apparatus, a polycrystalline silicon ingot manufacturing method, and a polycrystalline silicon ingot are provided. The apparatus comprises: a crucible having a rectangular shape in a cross-section; an upper heater provided above the crucible; and a lower heater provided below the crucible. A silicon melt stored in the crucible is solidified from a bottom surface of the crucible upward unidirectionally. The apparatus further comprises an auxiliary heater that heats at least a bottom-surface-side portion of a sidewall of the crucible. The production yield can be improved by using the apparatus and by reducing the oxygen concentration at the location where the oxygen concentration tends to be high locally at the bottom part of the ingot. | 05-16-2013 |
| 20130028825 | MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT - A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦X<30 mm) in hight, a second region from X to Y (30 mm≦Y<100 mm), and a third region of the Y or higher, with the bottom of the crucible as a datum, a solidification rate V1 in the first region is in a range of 10 mm/h≦V1≦20 mm/h, and a solidification rate V2 in the second region is in a range of 1 mm/h≦V2≦5 mm/h. | 01-31-2013 |
| 20130015318 | LAYERED CRUCIBLE FOR CASTING SILICON INGOT AND METHOD OF PRODUCING SAMEAANM Wakita; SaburoAACI Noda-shiAACO JPAAGP Wakita; Saburo Noda-shi JPAANM Tsuzukihashi; KojiAACI Akita-shiAACO JPAAGP Tsuzukihashi; Koji Akita-shi JPAANM Ikeda; HiroshiAACI TokyoAACO JPAAGP Ikeda; Hiroshi Tokyo JPAANM Kanai; MasahiroAACI Akita-shiAACO JPAAGP Kanai; Masahiro Akita-shi JP - Provided are a layered crucible for casting a silicon ingot that can suppress dissolution of oxygen into the silicon ingot and a method of producing the same crucible. The layered crucible for casting a silicon ingot is used in the production of a silicon ingot by melting and casting a silicon raw material. The layered crucible comprising: a silica layer provided on the inner side of a mold; and a barium coating layer provided on the surface of the silica layer. | 01-17-2013 |
| 20130008371 | METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT - A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm≦X<30 mm), a second zone from X to Y in height (30 min≦Y<100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h≦V1≦20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h≦V2≦5 mm/h. | 01-10-2013 |
| 20120302787 | PROCESS FOR PRODUCING PERFLUOROBUTANESULFONIC ACID SALT - A process for producing a perfluorobutanesulfonic acid salt (PFBS salt) is provided. By the process, the yield is improved and PFOS salt content is reduced. Electrochemical fluorination is conducted in a reaction solution comprising anhydrous hydrogen fluoride to generate perfluorobutanesulfonyl fluoride, and the fluoride is hydrolyzed to produce a perfluorobutanesulfonic acid salt. The process for producing a perfluorobutanesulfonic acid salt includes: a step in which liquid phase components generated in the electrochemical fluorination cell are withdrawn and a first a perfluorobutanesulfonic acid salt fraction is prepared therefrom; and a step in which gaseous phase components discharged from the electrochemical fluorination cell are collected and a second perfluorobutanesulfonic acid salt fraction is prepared therefrom. The reaction solution in the electrochemical fluorination cell is regulated so as to have a perfluorooctanesulfonyl fluoride content of 500 ppm or lower by withdrawing the liquid phase components from the electrochemical fluorination cell. | 11-29-2012 |
| 20120211692 | HEAT-RAY SHIELDING COMPOSITION AND METHOD FOR PRODUCING THE SAME - Disclosed are a heat-ray shielding composition including an indium tin oxide powder which has a BET specific surface area of 40 m | 08-23-2012 |
| 20120193587 | CONDUCTIVE COATING FILM-FORMING AGENT, METHOD FOR PRODUCING THE SAME, AND MOLDED ARTICLE USING THE SAME - This conductive coating film-forming agent contains a coating film-forming component having a polyol structure, and at least one kind of a compound selected from bis(fluorosulfonyl)imide salts represented by (FSO | 08-02-2012 |
| 20120184763 | METHOD FOR PRODUCING PERFLUOROSULFONIC ACID HAVING ETHER STRUCTURE AND DERIVATIVE THEREOF, AND SURFACTANT CONTAINING FLUORINE-CONTAINING ETHER SULFONIC ACID COMPOUND AND DERIVATIVE THEREOF - In this method, R | 07-19-2012 |
| 20120009113 | METHOD FOR PRODUCING BIS(FLUOROSULFONYL)IMIDE - According to the method for producing bis(fluorosulfonyl)imide of the present invention, first, an unreacted mixed liquid is prepared by mixing a first fluorosulfonic acid with urea in a condition free of a chemical reaction between the first fluorosulfonic acid and urea. Then, the unreacted mixed liquid is dripped into a heated second fluorosulfonic acid or a heated bis(fluorosulfonyl)imide, allowing a chemical reaction between fluorosulfonic acid and urea to proceed. In this method, generation of carbon dioxide gas and heat during the chemical reaction can be controlled. | 01-12-2012 |
| 20110269990 | PROCESS FOR PRODUCING PERFLUOROALKYLSULFONIC ACID SALT - In this method for producing a perfluoroalkylsulfonic acid salt, there is provided a method for producing a perfluoroalkylsulfonic acid salt with a low fluorine content, which is a simple method to achieve a high yield, | 11-03-2011 |
| 20110210295 | Conductive silica sol composition, and molded article produced using the same - The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts. | 09-01-2011 |
| 20100305345 | PROCESS FOR PRODUCING FLUORINE-CONTAINING COMPOUNDS - This process for producing fluorine-containing compounds includes liquid-phase fluorination by introducing a raw material compound and fluorine gas into a solvent to replace hydrogen atoms in the raw material compound with fluorine atoms. More specifically, the process for producing fluorine-containing compounds includes (1) promoting fluorination by dissolving the raw material compound in anhydrous hydrofluoric acid and introducing into a liquid-phase fluorination solvent, or (2) promoting fluorination by dissolving the raw material compound in a perfluoro compound having a plurality of polar groups in a molecule thereof and introducing into a liquid-phase fluorination solvent. According to these processes, a fluorination reaction can be carried out at high yield and without containing hardly any isomers while using a hydrocarbon compound as is for the raw material. | 12-02-2010 |
| 20100025638 | COMPOSITION FOR FORMING TRANSPARENT ELECTROCONDUCTIVE FILM, TRANSPARENT ELECTROCONDUCTIVE FILM, AND DISPLAY - A composition includes a binder component and a conductive powder and a high-refractive-index powder both dispersed in the binder component, wherein the conductive powder includes 0.1 to 30 mass % of a tin hydroxide powder and 70 to 99.9 mass % of other conductive powder. The composition enables to form a transparent conductive film having excellent scratch resistance, excellent antistatic properties, an extremely high visible light transmittance and a controllable refractive index. Also described is the transparent conductive film. Further described is a display having the transparent conductive film on the display surface. | 02-04-2010 |
