| MITSUBISHI MATERIALS CORPORATION Patent applications |
| Patent application number | Title | Published |
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| 20120135142 | PROCESS FOR PRODUCTION OF ALUMINUM COMPLEX COMPRISING SINTERED POROUS ALUMINIUM BODY - This method for producing an aluminum composite including porous sintered aluminum, includes: mixing aluminum powder with a sintering aid powder containing either one or both of titanium and titanium hydride to obtain a raw aluminum mixed powder; adding and mixing a water-soluble resin binder, water, a plasticizer containing at least one selected from polyhydric alcohols, ethers, and esters, and a water-insoluble hydrocarbon-based organic solvent containing five to eight carbon atoms into the raw aluminum mixed powder to obtain a viscous composition; shape-forming the viscous composition on an aluminum foil or an aluminum plate and causing the viscous composition to foam to obtain a formed object prior to sintering; and heating the formed object prior to sintering in a non-oxidizing atmosphere to obtain an aluminum composite which includes porous sintered aluminum integrally joined onto the aluminum foil or the aluminum plate, wherein when a temperature at which the raw aluminum mixed powder starts to melt is expressed as Tm (° C.), then a temperature T (° C.) of the heating fulfills Tm-10 (° C.)≦T≦685 (° C.). | 05-31-2012 |
| 20120128523 | CLAY-LIKE COMPOSITION FOR FORMING SINTERED COPPER BODY, POWDER FOR CLAY-LIKE COMPOSITION FOR FORMING SINTERED COPPER BODY, METHOD OF MANUFACTURING CLAY-LIKE COMPOSITION FOR FORMING SINTERED COPPER BODY, SINTERED COPPER BODY, AND METHOD OF MANUFACTURING SINTERED COPPER BODY - A clay-like composition for forming a sintered copper body of the present invention includes a powder constituent containing a copper-containing metal powder which contains copper and a copper-containing oxide powder which contains copper; a binder; and water, wherein the amount of oxygen contained in the powder constituent is in a range of from 4 mass % to 8 mass %. | 05-24-2012 |
| 20120119166 | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM - A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%. | 05-17-2012 |
| 20120119004 | APPARATUS FOR FRACTURING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING FRACTURED FRAGMENTS OF POLYCRYSTALLINE SILICON - An apparatus for fracturing polycrystalline silicon having: a pair of rolls which are rotated in a counter direction each other around parallel axes; a plurality of fracturing teeth which are provided on and protruded radially-outwardly from outer peripheral surfaces of the rolls, and are made from cemented carbide or silicon material; and resin covers being wound around the roll in a state in which the fracturing teeth penetrate thereof so as to cover the outer peripheral surfaces of the rolls, and fractures fragments of polycrystalline silicon between the rolls. | 05-17-2012 |
| 20120107219 | APPARATUS AND METHOD FOR PRODUCING PURIFIED HYDROGEN GAS BY A PRESSURE SWING ADSORPTION PROCESSES - The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower. | 05-03-2012 |
| 20120107190 | APPARATUS FOR PRODUCING TRICHLOROSILANE AND METHOD FOR PRODUCING TRICHLOROSILANE - An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace. | 05-03-2012 |
| 20120107166 | PROCESS FOR PRODUCING POROUS SINTERED ALUMINUM, AND POROUS SINTERED ALUMINUM - This method for producing porous sintered aluminum includes: mixing aluminum powder with a sintering aid powder containing titanium to obtain a raw aluminum mixed powder; mixing the raw aluminum mixed powder with a water-soluble resin binder, water, and a plasticizer containing at least one selected from polyhydric alcohols, ethers, and esters to obtain a viscous composition; drying the viscous composition in a state where air bubbles are mixed therein to obtain a formed object prior to sintering; and heating the formed object prior to sintering in a non-oxidizing atmosphere, wherein when a temperature at which the raw aluminum mixed powder starts to melt is expressed as Tm (° C.), a temperature T (° C.) of the heating fulfills Tm−10 (° C.)≦T≦685 (° C.). | 05-03-2012 |
| 20120104131 | APPARATUS FOR FRACTURING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING FRACTURED FRAGMENTS OF POLYCRYSTALLINE SILICON - An apparatus for fracturing polycrystalline silicon having a pair of rolls which are rotated in a counter direction each other around parallel axes, the rolls is provided with: a plurality of disks layered along the axes of the rolls; and a plurality of fracturing teeth protruding radially-outwardly from the disks with a certain intervals along a peripheral direction of the disks, wherein the disks are rotated at different rotation speed from an adjacent disks, and the apparatus fracturing fragments of polycrystalline silicon between the rolls. | 05-03-2012 |
| 20120104127 | APPARATUS FOR FRACTURING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING FRACTURED FRAGMENTS OF POLYCRYSTALLINE SILICON - An apparatus for fracturing polycrystalline silicon having a pair of rolls which are rotated in a counter direction each other around parallel axes; and a plurality of fracturing teeth which are provided on outer peripheral surfaces of the rolls and are protruded radially-outwardly, in which top surfaces thereof are formed spherically and side surfaces thereof are formed conically or cylindrically, and fracturing fragments of polycrystalline silicon between the rolls. | 05-03-2012 |
| 20120104126 | APPARATUS FOR FRACTURING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING FRACTURED FRAGMENTS OF POLYCRYSTALLINE SILICON - An apparatus for fracturing polycrystalline silicon has: a pair of rolls which are rotated in a counter direction each other around parallel axes; and a plurality of fracturing teeth protruding outward radially from outer peripheral surfaces of the rolls and having variant heights. In the apparatus for fracturing, the fracturing teeth are arranged so that higher teeth among the fracturing teeth and lower teeth among the fracturing teeth are alternately rowed at least along a circumferential direction or a width direction of the rolls; and the fracturing teeth are arranged so that a tip of the higher tooth of the one roll and a tip of the lower tooth of the other roll are opposed to each other at a position in which the fracturing teeth of each rolls are closest to each other, so that the apparatus fractures fragments of polycrystalline silicon between the rolls. | 05-03-2012 |
| 20120104125 | APPARATUS FOR FRACTURING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING FRACTURED FRAGMENTS OF POLYCRYSTALLINE SILICON - An apparatus for fracturing polycrystalline silicon having: a pair of rolls rotated in a counter direction each other around parallel axes; and a plurality of fracturing teeth units provided on outer peripheral surfaces of the rolls, arranged along a circumferential direction of the rolls, and have a plurality of fracturing teeth and fixing covers fixing the fracturing teeth on the outer peripheral surfaces of the rolls, in which: the fracturing teeth has flanges; and the fixing covers are formed as strips along a longitudinal direction of the rolls, and in which the fixing covers are fixed on the rolls in a state in which top ends of the fracturing teeth are protruded outward radially of the rolls from the fixing hole outward so as to hold the flanges between the fixing covers and the rolls. | 05-03-2012 |
| 20120100330 | LIQUID AND METHOD FOR REMOVING CSD COATED FILM, FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME - Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of β-diketones, β-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, α-hydroxy carboxylic acid, α-hydroxy carbonyl derivatives, and hydrazone derivatives. | 04-26-2012 |
| 20120100044 | METHOD AND APPARATUS FOR MANUFACTURING TRICHLOROSILANE - An apparatus | 04-26-2012 |
| 20120098168 | METHOD OF MANUFACTURING SINTERED SILVER ALLOY BODY AND COPPER OXIDE-CONTAINING CLAY-LIKE COMPOSITION - A method of manufacturing a sintered silver alloy body of the present invention includes steps of adding copper oxide to a silver-containing clay-like composition that contains silver-containing metal powder containing silver, a binder, and water to manufacture a clay-like composition for forming a sintered silver alloy body; making an object by making the clay-like composition for forming a sintered silver alloy body into an arbitrary shape; and baking the object in a reduction atmosphere or a non-oxidizing atmosphere after the object is dried. | 04-26-2012 |
| 20120094142 | PROCESS FOR PRODUCING POROUS SINTERED ALUMINUM, AND POROUS SINTERED ALUMINUM - This method for producing porous sintered aluminum includes: mixing aluminum powder with a sintering aid powder containing a sintering aid element to obtain a raw aluminum mixed powder; forming the raw aluminum mixed powder into a formed object prior to sintering having pores; and heating the formed object prior to sintering in a non-oxidizing atmosphere to produce porous sintered aluminum, wherein the sintering aid element is titanium, and when a temperature at which the raw aluminum mixed powder starts to melt is expressed as Tm (° C.), then a temperature T (° C.) of the heating fulfills Tm-10 (° C.)≦T≦685 (° C.). | 04-19-2012 |
| 20120082609 | METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES - The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor. | 04-05-2012 |
| 20120082524 | COOLANT-HOLE EQUIPPED DRILL - A coolant-hole equipped drill includes a drill main body, a cutting edge portion which has a tip flank, a chip discharging groove provided with a front groove wall surface and a rear groove wall surface, a cutting edge formed at a ridge line portion where the front groove wall surface and the tip flank intersect with each other, a land portion formed between the chip discharging grooves adjacent to each other in the rotating direction, and a coolant hole drilled at the land portion and opened at the tip flank. The coolant hole includes a front hole wall surface, a rear hole wall surface, and an outer-circumference hole wall surface. | 04-05-2012 |
| 20120077359 | WIRING STRUCTURE AND JOINT BOX INCLUDING THE SAME - A wiring structure includes a board assembly and pin terminals. In each of pin terminal insertion holes formed in the board assembly, a terminal connection portion electrically connected to a metal foil wire and fitted onto the pin terminal so as to hold the pin terminal is provided in a through-hole of at least one of a plurality of circuit boards forming the board assembly, which forms a part of the pin terminal insertion hole, whereas an insulating sleeve blocking contact between the pin terminal and each of the remaining circuit boards is fitted into through-holes of the remaining circuit boards, which form the remaining part of the pin terminal insertion hole. | 03-29-2012 |
| 20120068265 | WIRING LAYER STRUCTURE AND PROCESS FOR MANUFACTURE THEREOF - This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer. | 03-22-2012 |
| 20120055372 | DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD - A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba | 03-08-2012 |
| 20120022269 | FLUORINE-CONTAINING N-ALKYLSULFONYLIMIDE COMPOUND, MANUFACTURING METHOD THEREFOR, AND METHOD OF MANUFACTURING AN IONIC COMPOUND - According to the method for producing fluorine-containing N-alkylsulfonylimide compound, the fluorine-containing N-alkylsulfonylimide compound can be produced safely with a high recovery rate by alkylating fluorine-containing sulfonylimide acid or fluorine-containing sulfonylimide acid salt with dialkylsulfuric acid or dialkylcarbonic acid. | 01-26-2012 |
| 20120015472 | METHOD OF PRODUCING SOLAR CELL MODULE - On a substrate is formed a transparent and conductive front electrode layer, on which is formed a photoelectric conversion unit that generates an electric power by a light. On the photoelectric conversion unit is formed a transparent and conductive film, on which a silver-containing back electrode layer. On the back electrode layer is formed further a back electrode reinforcing film formed by UV-irradiation of, or by heating of, or by heating after UV-irradiation of a layer that is obtained by applying a composition for reinforcing film on the back electrode layer with a wet coating method. | 01-19-2012 |
| 20120014859 | METHOD FOR PRODUCING BIS(FLUOROSULFONYL)IMIDE SALT, METHOD FOR PRODUCING FLUOROSULFATE, AND METHOD FOR PRODUCING BIS(FLUOROSULFONYL)IMIDE ONIUM SALT - According to the method for producing bis(fluorosulfonyl)imide salt of the present invention, the method for producing fluorosulfate, and the method for producing bis(fluorosulfonyl)imide onium salt, first, an aqueous solution is prepared by dissolving a mixed liquid containing bis(fluorosulfonyl)imide and fluorosulfonic acid in water. Then, the aqueous solution is neutralized with an alkaline compound, producing bis(fluorosulfonyl)imide salt and fluorosulfate. In the methods, bis(fluorosulfonyl)imide salt, fluorosulfate, and bis(fluorosulfonyl)imide onium salt can be obtained safely and easily. | 01-19-2012 |
| 20120009113 | METHOD FOR PRODUCING BIS(FLUOROSULFONYL)IMIDE - According to the method for producing bis(fluorosulfonyl)imide of the present invention, first, an unreacted mixed liquid is prepared by mixing a first fluorosulfonic acid with urea in a condition free of a chemical reaction between the first fluorosulfonic acid and urea. Then, the unreacted mixed liquid is dripped into a heated second fluorosulfonic acid or a heated bis(fluorosulfonyl)imide, allowing a chemical reaction between fluorosulfonic acid and urea to proceed. In this method, generation of carbon dioxide gas and heat during the chemical reaction can be controlled. | 01-12-2012 |
| 20120003452 | SURFACE-COATED CUTTING TOOL - A surface-coated cutting tool includes a tool substrate made of tungsten carbide-based cemented carbide or titanium carbonitride-based cermet; and a hard coating layer formed by vapor-depositing in order, a lower layer (a), an intermediate layer (b), and an upper layer (c) on the tool substrate. The lower layer (a) is a Ti layer composed of one or more of a titanium carbide layer, a titanium nitride layer, a titanium carbonitride layer, a titanium carboxide layer, and a titanium oxycarbonitride layer, and having a thickness of 3 to 20 μm. The intermediate layer (b) is an aluminum oxide layer having a thickness of 1 to 5 μm, and having an α-type crystal structure in a chemically vapor-deposited state. The upper layer (c) is an aluminum oxide layer having a thickness of 2 to 15 μm, and containing one or more elements of Ti, Y, Zr, Cr, and B. | 01-05-2012 |
| 20120001298 | Method for manufacturing thin film capacitor and thin film capacitor obtained by the same - A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0. | 01-05-2012 |
| 20110314926 | BIAXIAL TENSILE TESTING MACHINE - A biaxial tensile testing machine performing a tensile test of a test piece by stretching the test piece in four directions along two axes perpendicular to each other includes: first and second turntables which are disposed so as to be parallel to each other and relatively rotatable about a rotary axis along the planer direction thereof; first to fourth link mechanisms which are provided at 90° intervals in the circumferential direction about the rotary axis so that one ends of respective members of a pair of members are rotatably connected to each other, and the other ends of respective members of the pair of members are attached across the first and second turntables; and first to fourth test piece holding units which are respectively attached to the first to fourth link mechanisms and hold the test piece. | 12-29-2011 |
| 20110309444 | THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER - This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target. | 12-22-2011 |
| 20110281134 | SPUTTERING TARGET FOR FORMING WIRING FILM OF FLAT PANEL DISPLAY - A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %. | 11-17-2011 |
| 20110274851 | Apparatus for producing polycrystalline silicon - An apparatus for producing polycrystalline silicon in which raw gas including silicon compounds is introduced into a reactor, in which electric current is supplied to silicon seed rods in the reactor so as to heat the silicon seed rods, and in which polycrystalline silicon is deposited on surfaces of the silicon seed rods and grown to rods, the apparatus has: a bell jar having a circumferential wall forming a chamber of the reactor and a jacket covering the circumferential wall, and in which a cooling path formed between the circumferential wall and the jacket that allows cooling medium including water to flow therethrough; a coolant feeding system which is connected to the bell jar so as to feed the cooling medium to the cooling path; a coolant recovering system which is connected to the bell jar so as to recover the cooling medium from the cooling path; a pressure control part controlling a pressure in the cooling path; and a flow-rate control part controlling a flow rate of the cooling medium, wherein the cooling medium flows in the cooling path as boiling two-phase flow by controlling the pressure and flow rate of the cooling medium. | 11-10-2011 |
| 20110273265 | SINTERED METAL OXIDE FOR THERMISTOR, THERMISTOR ELEMENT, THERMISTOR TEMPERATURE SENSOR, AND METHOD FOR PRODUCING SINTERED METAL OXIDE FOR THERMISTOR - Disclosed is a sintered metal oxide used for thermistors, which includes a complex oxide represented by the following general formula: La | 11-10-2011 |
| 20110273088 | SURGE ABSORBER | 11-10-2011 |
| 20110269990 | PROCESS FOR PRODUCING PERFLUOROALKYLSULFONIC ACID SALT - In this method for producing a perfluoroalkylsulfonic acid salt, there is provided a method for producing a perfluoroalkylsulfonic acid salt with a low fluorine content, which is a simple method to achieve a high yield, | 11-03-2011 |
| 20110268515 | ROUGHING INSERT AND ROUGHING END MILL - This roughing insert is provided with an insert body, and a waveform cutting edge which is formed on an intersecting ridge line portion between a rake face and a flank face of the insert body, and which undulates along this intersecting ridge line portion. The waveform cutting edges are formed such that a portion thereof has a smaller wavelength than the remaining portion thereof. | 11-03-2011 |
| 20110268513 | RADIUS END MILL - Damage to a corner cutting edge or degradation of the roughness of a surface of workpiece caused by changes in the cutting edge strength of the corner cutting edge or variations of cutting load is prevented. A flute ( | 11-03-2011 |
| 20110253177 | METHOD OF WASHING POLYCRYSTALLINE SILICON, APPARATUS FOR WASHING POLYCRYSTALLINE SILICON, AND METHOD OF PRODUCING POLYCRYSTALLINE SILICON - A method of washing polycrystalline silicon is provided. The method includes a step of acid cleaning in which the polycrystalline silicon is cleaned with an acid solution and a step of a water cleaning in which the polycrystalline silicon is cleaned by pure water after the step of acid cleaning. In the step of water cleaning, residual acid solution on the surface of the polycrystalline silicon is removed by immersing the polycrystalline silicon in pure water held in a water cleaning bath, and replacing the pure water in the water cleaning bath at least once. The electrical conductivity (C) of the pure water in the water cleaning bath is measured. Based on the reading of the electrical conductivity (C), the timing for finishing the step of water cleaning is decided. | 10-20-2011 |
| 20110250089 | Clayish composition for forming sintered silver alloy body, powder for clayish composition for forming sintered silver alloy body, method for manufacturing clayish composition for forming sintered silver alloy body, sintered silver alloy body, and method for manufacturing sintered silver alloy body - A clayish composition for forming a sintered silver alloy body capable of forming a sintered silver alloy body, which is not easily discolored even in the atmosphere and has excellent tensile strength, flexural strength, surface hardness (hereinafter, sometimes collectively referred to as ‘mechanical strength’), elongation or the like, powder for the clayish composition for forming a sintered silver alloy body, a method for manufacturing the clayish composition for forming a sintered silver alloy body, a sintered silver alloy body and a method for manufacturing the sintered silver alloy body. | 10-13-2011 |
| 20110241266 | Production method of fine grain polycrystalline diamond compact - [Problem] This invention aims to provide a production method of a fine grain polycrystalline diamond compact which is suitable for finishing cutting tool materials and/or ultra-precision machining tool materials. In the method, a freeze-drying process for preventing the growth of secondary particle formation is unnecessary, and an aid does not need to be mixed in advance. | 10-06-2011 |
| 20110236292 | Clean bench and method of producing raw material for single crystal silicon - A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space. | 09-29-2011 |
| 20110233550 | Method for producing a thin film transistor, and a thin film transistor - Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer. | 09-29-2011 |
| 20110232694 | Reactor cleaning apparatus - In a reactor cleaning apparatus | 09-29-2011 |
| 20110223074 | APPARATUS FOR PRODUCING TRICHLOROSILANE - In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls. | 09-15-2011 |
| 20110221642 | ANTENNA DEVICE AND COMMUNICATION APPARATUS - There is provided an antenna device including a substrate, an earth section which is disposed on a portion of the substrate, a feed point which is disposed on the substrate, a loading section disposed on the substrate and constructed with a line-shaped conductor pattern which is formed in a longitudinal direction of an elementary body made of a dielectric material, an inductor section which connects one end of the conductor pattern to the earth section, and a feed point which feeds a current to a connection point of the one end of the conductor pattern and the inductor section, wherein a longitudinal direction of the loading section is arranged to be parallel to an edge side of the earth section. | 09-15-2011 |
| 20110220283 | APPARATUS AND METHOD OF MANUFACTURING SILICON SEED ROD - A manufacturing apparatus of silicon seed rod in which two silicon seed rods are joined into one long silicon seed rod by welding, having: an upper seed rod holding part holding an upper silicon seed rod vertically; an elevating device holding a lower silicon seed rod which faces a lower end of the upper silicon seed rod in a state in which the lower silicon seed rod is movable vertically; an induction-heating coil being arranged around the lower end of the upper silicon seed rod; a preheating ring being disposed below the induction-heating coil; and a moving device of the preheating ring that moves the preheating ring between a heat position in which the preheating ring is induction-heated around an upper end of the lower silicon seed rod by the induction-heating coil and a wait position which is distant from the heat position. | 09-15-2011 |
| 20110215084 | Apparatus for producing trichlorosilane - An apparatus for producing trichlorosilane from raw gas containing silicon tetrachloride and hydrogen, having: a reaction chamber being supplied with the raw gas for generating reacted gas containing trichlorosilane and hydrogen; a plurality of heaters heating the raw gas and having exothermic portions being disposed along a vertical direction in the reaction chamber; a plurality of electrodes being connected to basal portions of the heaters; and a radiation plate being disposed between the exothermic portions of the heaters. | 09-08-2011 |
| 20110215083 | Apparatus for producing trichlorosilane and method for producing trichlorosilane - An apparatus for producing trichlorosilane, comprising: a reaction chamber into which the raw gas is introduced to produce a reaction gas; a plurality of heaters disposed inside the reaction chamber to heat the raw gas; and a plurality of electrodes connected to basal portions of the heaters, wherein the heaters include first heaters each having an exothermic portion and second heaters each having an exothermic portion shorter than that of the first heater and a radiation plate connected to the exothermic portion, wherein a partial portion of the exothermic portion of the first heater faces the radiation plate of the second heaters; the reaction chamber has an introducing port of the raw gas on a side of the exothermic portion of the second heater; and the reaction chamber has discharge port of the reaction product gas on a side of the radiation plate of the second heater is arranged. | 09-08-2011 |
| 20110211924 | DRILL - A guide portion prevents the drilling hole from curving due to a skipping rope phenomenon, and also prevents the inner wall face of the drilling hole from being damaged, so that its surface roughness can be improved. | 09-01-2011 |
| 20110210295 | Conductive silica sol composition, and molded article produced using the same - The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts. | 09-01-2011 |
| 20110200512 | METHOD FOR PRODUCING TRICHLOROSILANE AND METHOD FOR UTILIZING TRICHLOROSILANE - The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C. | 08-18-2011 |
| 20110200510 | Apparatus for producing trichlorosilane and method for producing trichlorosilane - An apparatus for producing trichlorosilane, including: a reaction vessel that has a substantially cylindrical wall body, a top plate, and a bottom plate, where a reaction product gas is produced from a raw gas supplied to the reaction vessel through a gas introducing passage provided to the lower section of the cylindrical wall body; and a plurality of heaters that are disposed inside the reaction vessel to heat the raw gas, wherein each of the heaters has a heating element that is elongated in a vertical direction and generates heat by electrification, and a mount that is fixed to the bottom plate and supports the heating element; a flange is provided to intermediate height of the heating element such that the flange is arranged upper than the gas introducing passage and is elongated in horizontal direction; and a passage of the raw gas formed between adjacent heaters is narrowed by the flange. | 08-18-2011 |
| 20110192719 | SPUTTERING TARGET FOR FORMING THIN FILM TRANSISTOR WIRING FILM - This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included. | 08-11-2011 |
| 20110192093 | METHOD FOR PRODUCING SINTERED CUBIC BORON NITRIDE COMPACT - A method for producing a highly uniform and highly dense sintered cubic boron nitride compact having high hardness by sintering at a milder condition without a binder, is provided. The method includes deflocculating secondary particles in cubic boron nitride starting powders by dispersing the starting powders in a solution of a deflocculant; molding the green compact after removing the solution of the deflocculant from the starting powders; and then sintering the green compact in the presence of a supercritical fluid source in a supercritical state by pressing and heating the green compact together with the supercritical fluid source. The supercritical fluid source can be one or more selected from a group consisted of polyvinylidene chloride, polyvinyl chloride, polyethylene, polypropylene, polystyrene, a polyester and an ABS resin. In the sintering, the pressure is 5 GPa or higher, and the temperature is 1400° C. or higher. According to the method, a highly uniform and highly dense sintered cubic boron nitride sintered compact having high hardness, can be obtained. | 08-11-2011 |
| 20110187622 | ANTENNA DEVICE - Provided is an antenna device with which the degradation of characteristics arising from the fact that the antenna has been miniaturized and made thinner is reduced and in which it is possible to increase the gain and to widen the coverage area by improving the characteristics of the internal antenna. The device is equipped with a circuit board, a wireless circuit component which is mounted on the substrate, an internal antenna which, is connected to the wireless circuit component which is mounted on the substrate, a circuit-side ground pattern which is connected to the wireless circuit component which is mounted on the substrate, and a dedicated antenna ground paten which is connected to the internal antenna which is mounted on the circuit board. | 08-04-2011 |
| 20110185953 | EXHAUST GAS TREATMENT METHOD AND SYSTEM IN CEMENT BURNING FACILITY - An object of the present invention is to provide an exhaust gas treatment method and system of a cement burning facility which can be configured by general-purpose apparatuses, and which is capable of improving the handling property of collected fine powder dust and thereby realizing a stable operation without the need of maintenance. To this end, according to the present invention, the chlorine concentration of the collected fine powder dust is set in a range of 5 to 20% in such a manner that when a part of exhaust gas is extracted as extracted gas from a lowermost part of a preheater | 08-04-2011 |
| 20110183131 | SURFACE-COATED CUTTING TOOL - This invention provides a surface-coated cutting tool which exhibits excellent fracture resistance and wear resistance in high-speed cutting, such as high-speed gear cutting, high-speed milling, and high-speed drilling. The surface-coated cutting tool includes a hard coating layer composed of an alternately laminated layer structure of at least a thin layer A and a thin layer B formed on the surface of a tool substrate, such as a cemented carbide substrate, a cermet substrate, and a high-speed tool steel substrate. The thin layer A is an (Al, Cr, Si)N layer which satisfies a compositional formula: [Al | 07-28-2011 |
| 20110177235 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF - Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb | 07-21-2011 |
| 20110169601 | THERMISTOR ELEMENT MANUFACTURING METHOD, AND THERMISTOR ELEMENT - Disclosed is a manufacturing method for a thermistor element having a metal oxide sintered body for thermistor use and multiple lead wires connected to said metal oxide sintered body for thermistor use. The method has a step wherein a thermistor raw material powder formed from a metal oxide, an organic binder powder, and a solvent are mixed and kneaded to form a clay, a step wherein the clay is extrusion-molded by means of a molding die ( | 07-14-2011 |
| 20110140981 | ANTENNA DEVICE - An antenna device, wherein the polarization is improved by an identical antenna or substrate, and a higher gain and a smaller size are provided even when the installation conditions are changed. The antenna includes a base provided with a power feed point electrically connected to a power feed unit in a wireless circuit, an antenna element set up on the base and electrically connected to the power feed point, and a ground pattern provided on the base. The antenna element includes a rise part which rises from the base and an element part extending from the top edge of the rise in any direction in the plane parallel to the base. The ground pattern is divided into at least two ground regions by a boundary, and a ground connection part which electrically and locally connects the ground regions. | 06-16-2011 |
| 20110139228 | TRANSPARENT ELECTROCONDUCTIVE FILM FOR SOLAR CELL, COMPOSITION FOR TRANSPARENT ELECTROCONDUCTIVE FILM AND MULTI-JUNCTION SOLAR CELL - An object of the present invention is to provide a transparent electroconductive film, which in addition to satisfying each of the requirements of favorable phototransmittance, high electrical conductivity, low refractive index and the like required when using in a multi-junction solar cell, enables running costs to be reduced since the transparent electroconductive film is produced without using a vacuum deposition method. The transparent electroconductive film for a solar cell of the present invention is provided between photoelectric conversion layers of a multi-junction solar cell, a coated film of fine particles formed by coating using a wet coating method is baked, the electroconductive component in the base material that composes the electroconductive film is present within the range of 5 to 95% by weight, and the thickness of the electroconductive film is within the range of 5 to 200 nm. | 06-16-2011 |
| 20110135409 | INSERT CLAMPING WEDGE AND INSERT-DETACHABLE TYPE CUTTER - An insert clamping wedge for clamp-fixing a cutting insert, seated in an insert attachment seat formed in a cutter body, to a recessed portion formed in the insert attachment seat is provided, the insert clamping wedge including: a wedge body, wherein the insert clamping wedge is pressed into the cutter body, wherein the wedge body includes a clamp surface which comes into close contact with the cutting insert and a wedge surface of which a gap between itself and the clamp surface becomes smaller in a press-insertion direction of the wedge body, and wherein the section perpendicular to the press-insertion direction of the wedge body from the wedge surface to the clamp surface being formed in a bell shape. | 06-09-2011 |
| 20110133190 | THIN-FILM TRANSISTOR AND INTERMEDIATE OF THIN-FILM TRANSISTOR - This thin-film transistor according to an aspect of the present invention includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer containing an oxygen-calcium concentrated layer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer containing an oxygen-calcium concentrated layer. The copper alloy underlayer containing an oxygen-calcium concentrated layer includes a concentrated layer, and the concentrated layer includes 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance. | 06-09-2011 |
| 20110129308 | PIN MIRROR CUTTER - A throw-away tip is mounted on a first tip mounting seat of a pin mirror cutter. In the throw-away tip, cutting edges are formed at intersecting ridgeline parts between a pair of oppositely disposed long side faces of a substantially trapezoidal flat-plate-shaped tip body, and upper and lower faces of the tip body. A thickness direction of the tip body is approximately aligned with a radial direction of the cutter body to provide curved edges formed in acute corner parts of the tip body for cutting. The tip is mounted on a second tip mounting seat of the pin mirror cutter such that the thickness direction of the tip body is approximately aligned with an axial direction of the cutter body to provide curved edges formed in obtuse corner parts of the tip body for cutting. | 06-02-2011 |
| 20110120506 | Apparatus and method for washing polycrystalline silicon - Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value. | 05-26-2011 |
| 20110100676 | HIGH STRENGTH AND HIGH CONDUCTIVITY COPPER ALLOY ROD OR WIRE - A high strength and high conductivity copper rod or wire includes Co of 0.12 to 0.32 mass %, P of 0.042 to 0.095 mass %, Sn of 0.005 to 0.70 mass %, and O of 0.00005 to 0.0050 mass %. A relationship of 3.0≦([Co]−0.007)/([P]−0.008)≦6.2 is satisfied between a content [Co] mass % of Co and a content [P] mass % of P. The remainder includes Cu and inevitable impurities, and the rod or wire is produced by a process including a continuous casting and rolling process. Strength and conductivity of the high strength and high conductivity copper rod or wire are improved by uniform precipitation of a compound of Co and P and by solid solution of Sn. The high strength and high conductivity copper rod or wire is produced by the continuous casting and rolling process, and thus production costs are reduced. | 05-05-2011 |
| 20110074010 | POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %. | 03-31-2011 |
| 20110067911 | METHOD OF BONDING PARTS TO SUBSTRATE USING SOLDER PASTE - In this method of bonding a part to a substrate using a solder paste, the solder paste is mounted or applied between a metallization layer formed on the substrate and a metallization layer formed on the part, and the part is bonded to the substrate by performing a reflow process in a non-oxidizing atmosphere to bond the substrate and the part. The metallization layer formed on the surface of the substrate is planar and includes a metallization layer main portion that has an area smaller than that of the metallization layer of the part and a solder guide portion that protrudes from a periphery of the metallization layer main portion. | 03-24-2011 |
| 20110067906 | POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate. | 03-24-2011 |
| 20110052914 | Method and apparatus for producing polycrystalline silicon and polycrystalline silicon - A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state. | 03-03-2011 |
| 20110048526 | INTERCONNECTOR FOR A SOLAR BATTERY AND MATERIAL OF THE SAME - A material of an interconnector for a solar battery used as an interconnector for a solar battery which connects cells with each other in a solar battery module, in which at least one of Zr and Mg is contained in a range of 3 ppm or more and 20 ppm or less, O is contained at 5 ppm or less in parts per million by mass, the balance consisting of Cu and inevitable impurities, and the residual resistance ratio is 300 or more. Further, an interconnector for a solar battery ( | 03-03-2011 |
| 20110048455 | Rinsing apparatus and rinsing method for polycrystalline silicon lump - A rinsing apparatus for polycrystalline silicon lump which is obtained by cutting or breaking a rod of polycrystalline silicon, including: a wash basket having a plurality of through holes, which carries the polycrystalline silicon lump; a wash tank in which the wash basket is provided therein, in which rinse water is continuously supplied from a water supply port which is arranged at a bottom part of the wash tank; an inner cage having a plurality of openings which is smaller than the through holes of the wash basket at a bottom part thereof, provided in the wash tank, in which the wash basket is stored therein; and a swing device holding and swinging the wash basket in the inner cage, and: an overflow part which recovers the rinse water overflowed from an upper portion of the wash tank is provided at the wash tank. | 03-03-2011 |
| 20110044880 | METHOD AND FACILITY FOR RECOVERING CO2 GAS IN CEMENT MANUFACTURING FACILITY - To provide a method and facility for enabling CO | 02-24-2011 |
| 20110041756 | COATING TOOL - Provided is a coating tool for forming a film having uniform thickness on a target by controlling precisely a flow-rate of a coating liquid, even if its viscosity is high. In the coating tool, a coating head | 02-24-2011 |
| 20110027025 | TOOL BODY OF PLUNGE CUTTING CUTTER, PLUNGE CUTTING CUTTER, AND PLUNGE CUTTING METHOD - Efficient plunge cutting work in which the tool body moves forward and backward in the axial direction to cut the wall face of a workpiece at high feed-speed, is possible even in the cutting process with backward motions. The tool body | 02-03-2011 |
| 20110024533 | Method of generating cracks in polycrystalline silicon rod and crack generating apparatus - A method of generating cracks in a polycrystalline silicon rod, comprising: heating a polycrystalline silicon rod; and subsequently performing local portion cooling of the polycrystalline silicon rod to apply a refrigerant fluid onto a spot-like area of a surface of the polycrystalline silicon rod. | 02-03-2011 |
| 20110017496 | POWER MODULE SUBSTRATE HAVING HEATSINK, METHOD FOR MANUFACTURING THE SAME, POWER MODULE HAVING HEATSINK, AND POWER MODULE SUBSTRATE - A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55≦B/A≦20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B. | 01-27-2011 |
| 20110014468 | Polycrystalline silicon producing method, apparatus for producing polycrystalline silicon, and polycrystalline silicon - A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively. | 01-20-2011 |
| 20110008113 | RADIUS END MILL AND CUTTING INSERT - A radius end mill including an end mill body which is rotated around an axis thereof; a chip discharge flute being provided at an outer periphery of a tip portion of the end mill body; a gash being provided at a tip portion of the chip discharge flute; a rake face being formed on a wall face facing an end-mill rotational direction in the chip discharge flute or the gash; a cutting edge being formed on the rake face; the cutting edge including an end cutting edge, an outer peripheral cutting edge, and a convex circular-arc-shaped corner cutting edge; the end cutting edge being formed at a side ridge portion on the tip portion of the rake face; the outer peripheral cutting edge being formed at a side ridge portion on the outer peripheral side of the rake face; the convex circular-arc-shaped corner cutting edge being formed at a corner side ridge portion formed by the end cutting edge and the outer peripheral cutting edge; a chip breaker being formed on a side ridge portion of the rake face at least along the corner cutting edge so as to have a convex circular-arc shape extending parallel to the corner cutting edge at the portion along the corner cutting edge; the chip breaker having a groove bottom face lower than respect to the rake face, and a groove wall face which rises from the groove bottom face and is connected to the rake face; and at both ends of the chip breaker on the side of the end cutting edge and on the side of the outer peripheral cutting edge, the groove bottom face rising to connect with the rake face in a direction along the end cutting edge or the outer peripheral cutting edge at the end, or the groove bottom face extends so as to be parallel to the rake face and the chip breaker is opened. | 01-13-2011 |
| 20110008112 | RADIUS END MILL AND CUTTING INSERT - A radius end mill including an end mill body which is rotated around an axis thereof; a chip discharge flute being provided at an outer periphery of a tip portion of the end mill body; a gash being provided at a tip portion of the chip discharge flute; a rake face being formed on a wall face facing an end-mill rotational direction in the chip discharge flute or the gash; a cutting edge being formed on the rake face; the cutting edge including an end cutting edge, an outer peripheral cutting edge, and a convex circular-arc-shaped corner cutting edge; the end cutting edge being formed at a side ridge portion on the tip portion of the rake face; the outer peripheral cutting edge being formed at a side ridge portion on the outer peripheral side of the rake face; the convex circular-arc-shaped corner cutting edge being formed at a corner side ridge portion formed by the end cutting edge and the outer peripheral cutting edge; wherein the corner cutting edge has a positive cutting edge inclination angle; and the portion of the rake face on the side of the side ridge portion along at least a portion of the corner cutting edge is inclined toward the rear side in the end-mill rotational direction as it approaches the outer peripheral cutting edge from the end cutting edge, and is formed in the shape of a twist face whose inclination toward the rear side in the end-mill rotational direction gradually becomes larger as it approaches the center of the convex circular arc formed by the corner cutting edge from the corner cutting edge. | 01-13-2011 |
| 20110001685 | ANTENNA DEVICE AND METHOD FOR PRODUCING THE SAME - An antenna apparatus includes a coaxial cable body configured by covering the peripheral portion of a core forming the power feed line with a first coating dielectric unit, a ground line and a second coating dielectric unit in that order, a main antenna element in which the core either singly or in combination with the first coating dielectric unit projects and extends from the distal end of the coaxial cable body, and an impedance adjustment element in which the ground line projects singly from the distal end of the coaxial cable body, and the impedance adjustment element maintains an orientation extending in a direction that differs from the extension direction of the main antenna element and is fixed to the distal end of the coaxial cable body. | 01-06-2011 |
| 20100321272 | ANTENNA DEVICE - An antenna device is provided with a base material having a power feed section to which a power feed line is connected; an antenna element connected to the power feed section; and a matching circuit section, which is connected to the power feed section and the antenna element and matches the reactance of the antenna element and that of the power feed line with each other. The antenna element is provided with an impedance control section, which is annularly formed and has passive components connected thereto, on an opened leading end section. | 12-23-2010 |
| 20100320423 | DIAMOND SINTERED COMPACT HAVING HIGH ELECTRICAL CONDUCTIVITY AND PRODUCTION METHOD THEREOF - The present invention is to provide a diamond sintered compact having good conductivity together with the characteristics, such as hardness, thermal conductivity, thermal resistance, chemical stability, almost equal to those of a natural diamond. A boron-doped diamond sintered compact having good conductivity and high thermal resistance is produced by a sintering process, in which 90 to 99.9 wt. % of a boron-doped diamond powder and 0.1 to 10% wt. % of a powder comprising, one or more of carbonates including Mg, Ca, Sr or Ba, and/or one or more of composite carbonates composed by two or more of these elements, as a bonding phase component, are sintered together under Ht/HP conditions, and the bonding phase component melts and then fills into the space between the boron-doped diamond powder particles. | 12-23-2010 |
| 20100305345 | PROCESS FOR PRODUCING FLUORINE-CONTAINING COMPOUNDS - This process for producing fluorine-containing compounds includes liquid-phase fluorination by introducing a raw material compound and fluorine gas into a solvent to replace hydrogen atoms in the raw material compound with fluorine atoms. More specifically, the process for producing fluorine-containing compounds includes (1) promoting fluorination by dissolving the raw material compound in anhydrous hydrofluoric acid and introducing into a liquid-phase fluorination solvent, or (2) promoting fluorination by dissolving the raw material compound in a perfluoro compound having a plurality of polar groups in a molecule thereof and introducing into a liquid-phase fluorination solvent. According to these processes, a fluorination reaction can be carried out at high yield and without containing hardly any isomers while using a hydrocarbon compound as is for the raw material. | 12-02-2010 |
| 20100304265 | SOLID OXIDE FUEL CELL - A solid oxide fuel cell of long lifetime in which good electric conductivity can be maintained between power generation cells even after long time use. A protective plate ( | 12-02-2010 |
| 20100289708 | ANTENNA DEVICE AND COMMUNICATION APPARATUS - There is provided an antenna device including a substrate, an earth section which is disposed on a portion of the substrate, a feed point which is disposed on the substrate, a loading section disposed on the substrate and constructed with a line-shaped conductor pattern which is formed in a longitudinal direction of an elementary body made of a dielectric material, an inductor section which connects one end of the conductor pattern to the earth section, and a feed point which feeds a current to a connection point of the one end of the conductor pattern and the inductor section, wherein a longitudinal direction of the loading section is arranged to be parallel to an edge side of the earth section. | 11-18-2010 |
| 20100289167 | APPARATUS FOR PRODUCING POROUS BODY AND METHOD FOR PRODUCING POROUS BODY - An apparatus for producing a porous body that forms an expandable slurry containing at least inorganic powder, a foaming agent, and a binder into a sheet, causes the expandable slurry sheet to be foamed and baked, and thereby produces the porous body, the apparatus includes: a mixer preparing the expandable slurry by containing inorganic powder, a foaming agent, and a binder; a die-coater that has a discharge opening which discharges the expandable slurry provided from the mixer to an external thereof so as to shape the expandable slurry into a sheet; and a carrier sheet arranged so as to face the discharge opening of the die-coater with a gap interposed therebetween, and feeding the expandable slurry discharged from the discharge opening, wherein a flow path of the expandable slurry from inside the mixer to the discharge opening of the die-coater is hermetically sealed from an outside. | 11-18-2010 |
| 20100285331 | METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE, AND POWER MODULE - A method for manufacturing a power module substrate, includes: preparing a ceramics substrate and a metal plate made of pure aluminum; a fusion step in which the ceramics substrate and the metal plate are stacked in layers with a brazing filler metal interposed therebetween, and a fused aluminum layer is formed at an interface between the ceramics substrate and the metal plate by fusing the brazing filler metal which is caused by heating; and a solidifying step in which the fused aluminum layer is solidified by cooling, and a crystal is grown so as to be arranged in a crystal orientation of the metal plate when the fused aluminum layer is solidified. | 11-11-2010 |
| 20100273402 | CMP conditioner and method of manufacturing the same - A chemical mechanical polishing (CMP) conditioner has diamond abrasive grits adhered to a conditioning surface which faces and makes contact with an abrasive pad of a CMP machine. The diamond abrasive grit is adhered to the CMP conditioner body by a metal plating layer, and the CMP conditioner body is formed of resin. | 10-28-2010 |
| 20100270146 | METHOD FOR MANUFACTURING CO-BASE SINTERED ALLOY SPUTTERING TARGET FOR FORMATION OF MAGNETIC RECORDING FILM WHICH IS LESS LIKELY TO GENERATE PARTRICLES, AND CO-BASE SINTERED ALLOY SPUTTERING TARGET FOR FORMATION OF MAGNETIC RECORDING FILM - A method for manufacturing a Co-base sintered alloy sputtering target for the formation of a magnetic recording film including providing a Cr—Co alloy powder consisting of 50 to 70 atomic % of Cr and remaining Co, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders together so as to give the chemical composition consisting of 2 to 15 mol % of a non-magnetic oxide, 3 to 20 mol % of Cr, and 5 to 30 mol % of Pt and a remainder containing Co, and sintering the mixture under pressure. Or alternatively providing a Pt—Cr binary alloy powder consisting of 10 to 90 atomic % of Pt and remaining Cr, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders so as to give the chemical composition above, and then sintering the mixture under pressure. | 10-28-2010 |
| 20100269754 | Polycrystalline silicon reactor - A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening. | 10-28-2010 |
| 20100266352 | CUTTING TOOL WITH DETACHABLE INSERT, HEAD MEMBER AND TOOL BODY OF THE SAME - In a head member ( | 10-21-2010 |
| 20100258233 | CERAMIC SUBSTRATE, METHOD OF MANUFACTURING CERAMIC SUBSTRATE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE - Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %. | 10-14-2010 |
| 20100247263 | Exchangeable cutting head and cutting tool having the same - An exchangeable cutting head that is inserted into a mounting hole formed on a tool body, screwed on a mounting screw section provided on a bottom portion of the mounting hole, and is attached removably to the tool body, the exchangeable cutting head includes: a cutting head body including: a cutting portion provided at a front-end section; a mounting portion provided at a rear-end section and inserted into the mounting hole; and an engaging hole having an inner-peripheral face on which a recessed portion is formed, the cutting head body being made of a hard material; and a connection member including: a shaft portion that is inserted into the engaging hole, includes an outer periphery attached firmly to the inner-peripheral face of the engaging hole, and is engaged with the inner-peripheral face; a head screw section screwed with the mounting screw section; and a hole section formed inside of the head screw section and the shaft portion and along a center line of the shaft portion, the connection member being made of a metal material having a degree of hardness lower than a degree of hardness of the hard material and the connection member being connected to the cutting head body. | 09-30-2010 |
| 20100243966 | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM - A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%. | 09-30-2010 |
| 20100239378 | END MILL - An end mill having a gash formed in a top portion of a flute. In a cross-section perpendicular to an intersecting ridgeline between an end cutting edge rake face and a gash bottom face of the gash, the gash bottom face and the end cutting edge rake face, and the gash bottom face and the gash wall face are respectively connected together by first and second connecting faces. The connecting faces have a form which either is a concave curve or a substantially concave curve formed with straight lines. A radius of curvature of the concave curve or the radius of a circle inscribed within straight lines forming the substantially concave curve about the front connecting face is larger than a radius of curvature of the concave curve or the radius of a circle inscribed within the straight lines forming the substantially concave curve about the second connecting face. | 09-23-2010 |
| 20100236831 | Excavation Tool - Provided is an excavation tool which can firmly fix a locking pin so that the locking pin does not move even in the case of an impact during excavation and/or the locking pin being pushed out in the insertion/removal direction. | 09-23-2010 |
| 20100236311 | RING ROLLING MILL AND RING ROLLING METHOD - This ring rolling mill includes a main roll and a mandrel provided so as to be capable of being brought close to or separated from each other, and rolling a peripheral portion of a ring-shaped body in a radial direction of the ring-shaped body while the ring-shaped body is rotated along its peripheral direction in a state where the peripheral portion of the ring-shaped body is pinched in the radial direction between an outer peripheral surface of the main roll which is rotationally driven, and an outer peripheral surface of the mandrel which is rotatable. This ring rolling mill further includes a mandrel inclining/supporting mechanism which inclines and supports the mandrel with respect to the axis of rotation of the main roll such that the gap between the outer peripheral surface of the mandrel and the outer peripheral surface of the main roll differs on one side and on the other side as seen in a direction along the axis of rotation of the main roll. | 09-23-2010 |
| 20100233062 | Apparatus and method for producing trichlorosilane - An apparatus and a method for producing trichlorosilane are provided, which effectively suppresses the reaction converting trichlorosilane to tetrachlorosilane and the formation of polymers, thereby achieving a high recovery ratio of trichlorosilane. The apparatus for producing trichlorosilane includes: a converter reactor for converting a raw material gas containing tetrachlorosilane and hydrogen into a reaction product gas; a cooler for cooling the reaction product gas fed from the converter reactor; and a plurality of provided in the cooler for spraying cooling liquids. Average droplet diameters of the cooling liquids sprayed from a plurality of the nozzles are different from each other, and a cooling liquids volume sprayed from each of the plurality of nozzles is able to be individually adjusted. | 09-16-2010 |
| 20100230473 | Al/AlN JOINT MATERIAL, BASE PLATE FOR POWER MODULE, POWER MODULE, AND MANUFACTURING METHOD OF Al/AlN JOINT MATERIAL - A base plate for a power module includes: a metal plate, a ceramic base plate joined to the metal plate, and a release agent provided in a joint surface between the metal plate and the ceramic base plate. A remaining amount of the release agent is less than 5 as an amount of boron measured by fluorescence X-ray analysis, and a crystal grain straining region in the joint surface is equal to or less than 40%, or an amount of crystal grain straining in the joint surface is equal to or less than 0.03%. | 09-16-2010 |
| 20100229796 | Manufacturing apparatus of polycrystalline silicon - An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes. | 09-16-2010 |
| 20100229684 | METAL FINE PARTICLES, COMPOSITION CONTAINING THE SAME, AND PRODUCTION METHOD FOR PRODUCING METAL FINE PARTICLES - The present invention provides metal fine particles which have selective wavelength absorption characteristics in a wavelength region from visible light to near infrared light, and have sharp absorption characteristics, and influences little the surrounding wavelength, and therefore, they yield tones having high chroma. The present invention provides metal fine particles wherein an aspect ratio is in a range from 1.1 to 8.0, a maximum absorption wavelength in plasmon absorption is in a range from 400 nm to 1,200 nm, and an absorption coefficient at a peak position of the maximum absorption wavelength is in a range from 6,000 to 20,000 L/mol·cm (measurement concentration: 1.6×10 | 09-16-2010 |
| 20100229683 | ARC START MATERIAL FOR ELECTROSLAG REMELTING OF SUPERALLOY AND ARC STARTING METHOD EMPLOYING THE ARC START MATERIAL - This arc start material for electroslag remelting comprises an aggregate of curled turning chips of superalloy. This arc starting method for electroslag remelting comprises starting electroslag remelting by generating an arc between a primary ingot electrode including a primary ingot and an arc start material for electroslag remelting, wherein the primary ingot electrode is energized while contacting with the arc start material for electroslag remelting including an aggregate of curled turning chips of superalloy, and then an arc is generated between the primary ingot electrode and the arc start material for electroslag remelting of superalloy by separating the primary ingot electrode from the arc start material for electroslag remelting of superalloy. | 09-16-2010 |
| 20100221076 | CUTTING TOOL AND CUTTING INSERT - A cutting tool is provided with a tool body which rotates about an axis thereof, and a cutting insert mounted removably on the outer periphery at the tip of the tool body, wherein: the cutting insert has a front/back-reversal symmetric substantially regular heptagonal plane shape having two heptagonal faces parallel with each other, a side face continuous with each of the heptagonal faces at right angles, and a cutting edge provided on each ridge line between the heptagonal face and the side face; the cutting edge includes a main cutting edge projected onto the side of the regular heptagon, and sub-cutting edges that extend from opposite ends of the main cutting edge so as to incline toward the center of the heptagonal face and connect the adjacent main cutting edges, and the tool body is equipped with a mounting seat that retains the cutting insert such that one of the main cutting edge is directed toward the tip side of the tool body and in a radial-outer direction in order to make it to work in cutting, and a corner angle α between one of the main cutting edges and the axis satisfy a relation 40°≦α≦44°. | 09-02-2010 |
| 20100218822 | COMPPSITE FILM FOR SUPERSTRATE SOLAR CELL, METHOD FOR PRODUCING THE COMPOSITE FILM FOR SUPERSTRATE SOLAR CELL, COMPOSITE FILM FOR SUBSTRATE SOLAR CELL, AND METHOD FOR PORDUCING THE COMPOSITE FILM FOR SUBSTRATE SOLAR CELL - A composite film for a superstrate solar cell or a substrate solar cell has a transparent conductive film and a conductive reflective film, wherein the transparent conductive film is formed by using a wet coating method to apply a transparent conductive film composition or dispersion containing microparticles of a conductive oxide, the conductive reflective film is formed by using a wet coating method to apply a conductive reflective film composition containing metal nanoparticles, the average diameter of holes occurring at the contact surface of the conductive reflective film on either the side of the photovoltaic layer or the side of the transparent conductive film is not more than 100 nm, the average depth at which the holes are positioned is not more than 100 nm, and the number density of the holes is not more than 30 holes/μm | 09-02-2010 |
| 20100206725 | SPUTTERING TARGET FOR FORMING ZRO2-IN2O3 BASED PROTECTIVE FILM FOR OPTICAL STORAGE MEDIUM - A sputtering target for forming a ZrO | 08-19-2010 |
| 20100206513 | METHOD OF PRODUCING COPPER ALLOY WIRE - Provided is a method of continuously producing a phosphorus-containing copper alloy wire by adding phosphorus or an element which is less soluble than phosphorus to molten copper. The method includes: adding an element less soluble into a heating furnace for maintaining molten copper sent from a melting furnace at a predetermined high temperature; transferring the molten copper sent from the heating furnace to a tundish; adding phosphorus to the molten copper after decreasing the temperature of the molten copper in the tundish; supplying the molten copper from the tundish to a belt wheel-type continuous casting apparatus; and rolling a cast copper material output from the belt wheel-type continuous casting apparatus, thereby continuously producing a phosphorus-containing copper alloy wire. | 08-19-2010 |
| 20100200302 | DIGGING TOOL, DIGGING BIT, AND DEVICE - Provided is an excavation tool for efficiently taking waste rocks produced during excavation into the inner peripheral side of a casing pipe and discharging the waste rocks to the outside. An excavation tool ( | 08-12-2010 |
| 20100194658 | ANTENNA DEVICE - An antenna element has an upstanding section erected from a base member; a tuning section extended from the upper end of the upstanding section into one direction in a parallel plane parallel to the base member, bent in the middle, and then extended in the direction opposite the one direction; and an open element section extended from the front end of the tuning section in the direction in which the open element section spirally turns in the parallel plane about the upstanding section. | 08-05-2010 |
| 20100190003 | Dielectric thin film, method of manufacturing same, and applications thereof - A dielectric thin film and a method of manufacturing the same, wherein the manufacture of a dielectric thin film having a composition represented by Ba | 07-29-2010 |
| 20100187344 | ROLLING MILL ROLL AND ROLLING MILL MACHINE - The present invention is to provide a rolling mil roll including a rolling mill ring and a metal base in which
| 07-29-2010 |
| 20100183496 | Apparatus for producing trichlorosilane and method for producing trichlorosilane - An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes. | 07-22-2010 |
| 20100178230 | Apparatus And Method For Manufacturing Trichlorosilane And Method For Manufacturing Polycrystalline Silicon - A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600° C. | 07-15-2010 |
| 20100178117 | Detachable insert-type cutting tool - The detachable insert-type cutting tool is provided with a holder, a head member which has an insert seat on which a cutting insert is detachably mounted and which is detachably attached to a head portion of the holder so that an attachment surface of the head member is closely in contact with an attachment surface of the holder, a coolant hole which is formed inside the holder so as to be opened on the attachment surface of the holder, and a first groove which is formed on the attachment surface of the head member, communicating with the coolant hole opened on the attachment surface of the holder and extending so as to be opened toward a cutting edge of the cutting insert mounted on the insert seat. | 07-15-2010 |
| 20100178116 | Cutting tool for machining inner surface of hole, and method for cutting the same - The cutting tool for machining an inner surface of a hole is provided with a cutting tool main body extending in the shape of a shaft, a cutting edge portion mounted on a head portion of the cutting tool main body so as to radially-outwardly protrude with respect to the center axis of the cutting tool main body, and a coolant hole formed at the cutting tool main body so as to have an opening at a position apart from the cutting edge portion on a circumferential surface of the head portion of the cutting tool main body, thereby flushing out a coolant from the opening to an axially orthogonal plane orthogonal to the center axis and also along a protruding direction at which the cutting edge portion protrudes. The opening of the coolant hole faces a direction different from the protruding direction of the cutting edge portion in the radial direction with respect to the center axis. | 07-15-2010 |
| 20100170785 | HIGH-STRENGTH SPUTTERING TARGET FOR FORMING PROTECTIVE FILM FOR OPTICAL RECORDING MEDIUM - A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al | 07-08-2010 |
| 20100162953 | Coating tool - The coating instrument is provided with a coating head which has a plurality of head members, and in which a groove-like slot is formed, an adjustment unit accommodated in a recessed groove installed on a leading end face continuing to an outer face opposite to an inner face or to the inner face in the head member to adjust the width of the slot by pressing a side wall face of the recessed groove, and a controller for controlling a pressing force to the side wall face of the recessed groove by the adjustment unit. The adjustment unit is provided with a fluid pressure chamber into which a fluid is sealed, a pressing portion for pressing the side wall face of the recessed groove by the fluid pressure of the fluid pressure chamber, and an operating portion for allowing the fluid pressure of the fluid pressure chamber to change. The controller is provided with a pressure detecting portion for detecting the fluid pressure of the fluid pressure chamber and an instruction portion for comparing the fluid pressure detected by the pressure detecting portion with a previously-set pressure range to give instructions to the operating portion. | 07-01-2010 |
| 20100154596 | SURFACE-COATED CUTTING INSERT AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a surface-coated cutting insert that includes an insert body having a substrate of tungsten carbide-based cemented carbide, titanium carbonitride-based cermet or ceramics, a base layer, an intermediate layer and an outermost layer. The base layer and the outermost layer are made of a single layer or two or more layers formed of carbides, nitrides, oxides, or borides of one selected from the group consisting of Group IVa metals, Group Va metals, Group VIa metals, aluminum and silicon, or complex compounds thereof, and the intermediate layer is formed of primarily Al2O3. The outermost layer is removed on part of the insert body surface including the flank face and a flank face-side cutting edge portion of the intersecting edge line region, with the outermost layer being left on part of the rake face inside a boundary with the intersecting edge line region. | 06-24-2010 |
| 20100143184 | METHOD FOR MANUFACTURING METAL NANORODS AND USE THEREOF - A method for manufacturing metal nanorods includes: a step of adding a reducing agent to a metallic salt solution; a step of radiating light into the metallic salt solution containing the reducing agent; and a step of leaving the light-radiated metallic salt solution containing the reducing agent stationary in a dark place so as to grow metal nanorods. Metal nanorods can be also grown by forming a mixed solution by fractionating the above light-radiated metallic salt solution and mixing the fractionated metallic salt solution into a non-radiated metallic salt solution containing the reducing agent, or mixing a non-radiated metallic salt solution and the reducing agent into the above light-radiated metallic salt solution; and leaving the mixed solution stationary in a dark place so as to grow metal nanorods. | 06-10-2010 |
| 20100143058 | INSERT - An insert attached to a tool body of a hole machining tool having an attachment seat and a pressing member for pressing the insert to adjust the position of a peripheral cutting edge in a diameter direction of the tool. The insert has a panel shape. One surface of the insert in a thickness direction provides a seating surface, the other surface in the thickness direction provides a peripheral flank surface. A surface facing the rear side of the insert in a tool rotation direction provides a pressed surface in a state that the insert is attached to the attachment seat. A side surface facing the front side in the tool rotation direction provides an inclined surface, and a peripheral cutting edge is formed at a ridge portion outside of the inclined surface in the diameter direction of the tool. | 06-10-2010 |
| 20100143052 | RADIUS END MILL AND CUTTING METHOD - An end mill body rotatable around an axis; peripheral cutting edges formed at a periphery of the end mill body located close to a distal end thereof; bottom cutting edges formed at a distal end of the end mill body; and corner cutting edges formed between the peripheral cutting edge and the bottom cutting edge. The corner cutting edges are formed to curve inwardly in a radial direction of the end mill body as they approach the distal end of the end mill body from the terminal end thereof and curve toward the terminal end of the end mill body after reaching the distal end of the end mill body. The bottom cutting edges are formed to communicate with the corner cutting edges and are close to the terminal end of the end mill body as the bottom cutting edge approaches inwardly in the radial direction. A value of a rake angle α of the corner cutting edge with respect to the axis −10°≦α≧10°. A rake surface of the corner cutting edge and a rake surface of the bottom cutting edge each are formed like a plane, and the rake surface of the corner cutting edge is formed to be flush with the rake surface of the bottom cutting edge. When an external diameter of the end mill body is D, a value of a curvature radius R of the corner cutting edge is greater than or equal to 0.1×D and is less than or equal to 0.3×D. | 06-10-2010 |
| 20100134238 | METAL OXIDE SINTERED COMPACT FOR THERMISTOR, THERMISTOR ELEMENT, THERMISOR TEMPERATURE SENSOR, AND MANUFACTURING METHOD FOR METAL OXIDE SINTERED COMPACT FOR THERMISTOR - A metal oxide sintered compact used for a thermistor includes a composite oxide represented by the general expression La(Cr | 06-03-2010 |
| 20100132746 | Apparatus and method for washing polycrystalline silicon - Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value. | 06-03-2010 |
| 20100126582 | CONDUCTIVE REFLECTIVE FILM AND PRODUCTION METHOD THEREOF - A conductive reflective film which is formed by calcining a substrate on which a composition containing metal nanoparticles is coated, the conductive reflective film including pores which appear on the film contact surface in the substrate side having an average diameter of 100 nm or less, an average depth of 100 nm or less in terms of position of the pores, and a number density of the pores of 30 pores/μm | 05-27-2010 |
| 20100124528 | HIGH-STRENGTH COLUMNAR CRYSTAL SILICON PART OF PLASMA ETCHING DEVICE CONSISTING THEREOF - The present invention relates to a columnar crystal silicon having a high strength. In the case where plasma etching device parts such as a focus ring, an upper electrode plate, and a shield ring which are formed from a high-strength columnar crystal silicon ingot having an interstitial oxygen concentration within a range of 1×10 | 05-20-2010 |
| 20100119314 | CUTTING INSERT AND CUTTING METHOD - A cutting insert, wherein: a cutting edge part having a quadrangular shaped cutting face, which is provided with a pair of side cutting edges extending in a longitudinal direction of an insert body, and a front cutting edge between ends of the side cutting edges that extends in a direction that intersects the longitudinal direction, is formed at an end of the insert body having a bar-shape; and viewed from a direction facing the cutting face perpendicularly to the longitudinal direction, at least one of a pair of corner edges where the side cutting edge and the front cutting edge intersect is formed in a convex shape such that it has a point of inflection at which, after a tangent line that makes contact with the corner edge rotates in a direction extending in the longitudinal direction along the corner edge from the front cutting edge, its direction of rotation changes, and it joins the side cutting edge. | 05-13-2010 |
| 20100108499 | SPUTTERING TARGET FOR FORMING PHASE-CHANGE FILM AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a sputtering target for forming a phase-change film which generates few particles in sputtering and a method for manufacturing the same. The target of the invention has a composition containing in terms of atomic %, 20.2 to 24.2% of Ge, 20.2 to 24.2% of Sb, and the remainder including Te and inevitable impurities, and having a microstructure in which a Ge | 05-06-2010 |
| 20100107726 | DEVICE FOR DETERMINING THE COEFFICIENT OF FRICTION OF DIAMOND CONDITIONER DISCS AND A METHOD OF USE THEREOF - A device for determining the coefficient of friction of diamond conditioner discs and a method of use thereof. The device is a solid base means comprising a block of granite with a smooth flat upper surface, a diamond conditioner disc counter surface means comprising a removable sheet of polycarbonate, a means for moving the diamond conditioner disc comprising an assembly parallel to and perpendicular to the surface of the said slab and overlain material along which a plate, the surface of which is parallel to the surface of the assembly and perpendicular to the surface of the said slab and overlain material, is moved by a screw, a means for securing the diamond conditioner disc comprising a holder bolted to the said plate that is capable of riding just above the surface of the slab and overlain material with an anterior face with respect to the direction of motion that is concave and capable of securely holding a diamond conditioner disc placed grinding face down upon the said overlain material the top of which is open so that load may be applied to the diamond conditioner disc and a means for measuring the shear force imparted by the moving diamond conditioner disc comprising a load cell. Shear force and down force are determined using the above apparatus and the coefficient of friction of the diamond conditioner disc and the said sheet are calculated therefrom. | 05-06-2010 |
| 20100101637 | DISPERSION OF METAL NANOPARTICLES, METHOD FOR PRODUCING THE SAME, AND METHOD FOR SYNTHESIZING METAL NANOPARTICLES - The present invention aims to provide a method for producing a dispersion of metal nanoparticles which enables to control the shape and the particle diameter over a wide range, a dispersion of metal nanoparticles having superior dispersion stability, and a method for producing the same. In addition, the present invention further aims to provide a dispersion of metal nanoparticles which has a volume resistivity of 2×10 | 04-29-2010 |
| 20100096002 | COMPOSITION FOR ELECTRODE FORMATION AND METHOD FOR FORMING ELECTRODE BY USING THE COMPOSITION - A composition for electrode formation containing metal nanoparticles dispersed in a dispersion medium, wherein the composition also comprises one or more organic polymers selected from the group consisting of polyvinylpyrrolidones, polyvinylpyrrolidone copolymers, polyvinyl alcohols, and cellulose ethers. | 04-22-2010 |
| 20100092266 | CAN MANUFACTURING DEVICE AND CAN MANUFACTURING METHOD - A can manufacturing device in which a tool supporting base has: a plurality of working tool units that support a plurality of working tools; a supporting member that supports a plurality of working tool units; and a linear driving mechanism that reciprocates the working tool units with respect to the supporting member in the axial direction of a workpiece. The linear driving mechanism has: a guide section fixed on the supporting member with a base plate therebetween; a slide rail that is fixed on the working tool unit and slides along the guide section; an electromagnetic coil provided on the base plate; a magnet plate that is provided on the working tool unit and generates, between the electromagnetic coil and itself, a thrust force for the guide section; and a supply pipe that is provided at the electromagnetic coil and supplies coolant to the inside of the electromagnetic coil. | 04-15-2010 |
| 20100083878 | EXHAUST GAS TREATMENT METHOD AND SYSTEM FOR CEMENT BURNING FACILITY - An object of this invention is to provide an exhaust gas treatment method and system for a cement burning facility which allows the handling property of collected powder dust to be improved and which enables smooth removal of hydrogen chloride that may result from burning of organic sludge. When part of exhaust gas in a lowermost part of a preheater | 04-08-2010 |
| 20100077897 | APPARATUS FOR MANUFACTURING SEEDS FOR POLYCRYSTALLINE SILICON MANUFACTURE - An apparatus for manufacturing seeds for polycrystalline silicon manufacture by cutting a silicon rod in an axial direction into at least one plate-like member, and cutting at least one of the silicon plate-like member lengthwise into seeds that are square in cross section, that includes a table which mounts the silicon rod or at least one of the plate-like member, a pair of end-face supporting members which support the silicon rod or at least one of the plate-like member by pressing both end faces thereof in the axial direction, and a cutting blade which cuts the silicon rod or at least one of the plate-like member in the axial direction, in addition the end-face supporting members includes comb-like grooves that allow the cutting blade to pass through. | 04-01-2010 |
| 20100075229 | POSITIVE ELECTRODE FORMING MATERIAL, COMPONENT THEREOF, METHOD FOR PRODUCING THE SAME AND RECHARGEABLE LITHIUM-ION BATTERY - Disclosed is a positive electrode forming material for a positive electrode of a battery, the material including particles of a positive electrode active material and fine carbon fibers adhering to surfaces of particles of the positive electrode active material in a shape of a network. The positive electrode active material is preferably fine particles having an average particle diameter of 0.03 to 40 μm. Each of the fine carbon fibers is preferably carbon nanofiber having an average fiber diameter of 1 to 100 nm and an aspect ratio of 5 or greater. The carbon nanofiber is surface-oxidized. The positive electrode forming material includes a binder. The content of the fine carbon fibers is 0.5 to 15 parts by mass and the content of the binder is 0.5 to 10 parts by mass with respect to 100 parts by mass of the positive electrode active material. | 03-25-2010 |
| 20100074823 | Apparatus for producing trichlorosilane and method for producing trichlorosilane - In the apparatus for producing trichlorosilane in which metal silicon powder supplied into the reactor is reacted with hydrogen chloride gas while being fluidized by the gas, thereby taking out trichlorosilane generated by the reaction from the upper part of the reactor, and a plurality of gas flow controlling members are installed at the internal space of the reactor along the vertical direction. | 03-25-2010 |
| 20100068125 | METHOD OF REFINING CARBON PARTS FOR PRODUCTION OF POLYCRYSTALLINE SILICON - A method of refining carbon parts for the production of polycrystalline silicon, comprises the steps of, replacing an inside gas of a reactor, in which the carbon parts are placed, with an inert gas, drying the carbon parts by raising a temperature in the reactor to a drying temperature of the carbon parts while flowing an inert gas through the reactor, raising a temperature in the reactor to a purification temperature higher than the drying temperature while flowing chlorine gas through the reactor, reducing a pressure in the reactor, maintaining the inside of the reactor in a reduced pressure, pressurizing the inside of the reactor by introducing chlorine gas for bringing the inside of the reactor into a pressurized state, and cooling the inside of the reactor. | 03-18-2010 |
| 20100061901 | APPARATUS FOR PRODUCING TRICHLOROSILANE - An apparatus for producing trichlorosilane includes a reaction container in which a supply gas containing silicon tetrachloride and hydrogen is supplied therein and a reaction product gas containing trichlorosilane and hydrogen chloride is produced; a heat transfer body which is filled in the reaction container, which is formed of a material having a melting point of at least higher than 1,400° C., and which has a void part which enables a gas to be passed; and a heating mechanism heating the heat transfer body in the reaction container. | 03-11-2010 |
| 20100058988 | MANUFACTURING APPARATUS OF POLYCRYSTALLINE SILICON - A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed. | 03-11-2010 |
| 20100055007 | Apparatus for producing trichlorosilane - This apparatus for producing trichlorosilane includes: a vessel having a gas inlet that introduces a feed gas into the vessel and a gas outlet that discharges a reaction product gas to the outside; a plurality of silicon core rods provided inside the vessel; and a heating mechanism that heats the silicon core rods, wherein a feed gas containing silicon tetrachloride and hydrogen is reacted to produce a reaction product gas containing trichlorosilane and hydrogen chloride. The silicon core rods may be disposed so as to stand upright on the bottom of the vessel, and the heating mechanism may have electrode portions that hold the lower end portions of the silicon core rods on the bottom of the vessel and a power supply that applies an electric current to the silicon core rods through the electrode portions to heat the silicon core rods. | 03-04-2010 |
| 20100053903 | INSULATION SUBSTRATE, POWER MODULE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND POWER MODULE USING THE SAME - A process for providing a power module substrate. A brazing sheet is temporarily fixed on a surface of a ceramic substrate by surface tension of a volatile organic medium, and a conductive pattern member punched from a base material is temporarily fixed on a surface of the brazing sheet by surface tension. These are heated so as to volatilize the volatile organic medium, and a pressure is applied to the conductive pattern member in its thickness direction. The brazing sheet is then melted to join the conductive pattern member with the surface of the ceramics substrate. | 03-04-2010 |
| 20100047026 | ROUGHING INSERT AND ROUGHING END MILL - This roughing insert is provided with an insert body, and a waveform cutting edge which is formed on an intersecting ridge line portion between a rake face and a flank face of the insert body, and which undulates along this intersecting ridge line portion. The waveform cutting edges are formed on the insert body respectively at positions which are rotationally symmetrical at predetermined angular intervals around a reference line of the insert bodies. These waveform cutting edges which are positioned rotationally symmetrically to each other are formed such that, when the insert bodies are rotated by the predetermined angle around the reference line, one or more portions of the waveform cutting edges do not match each other and are mutually asymmetrical. | 02-25-2010 |
| 20100041157 | Analysis apparatus and analysis method of chlorosilanes - The problem to be solved is to provide an analysis apparatus and analysis method of chlorosilanes capable of stably carrying out an analysis with less contamination. An analysis apparatus of chlorosilanes includes a vaporizer | 02-18-2010 |
| 20100038362 | Storage container for liquid chlorosilane and closing lid therefor - The storage container for a liquid chlorosilane of the present invention comprises, a tank which stores the liquid chlorosilane, a valve which is connected to the tank and to which an external pipe can be connected detachably, and a closing lid which seals the valve when the external pipe is detached from the valve. The valve comprises a housing and a valve body provided in the housing. The closing lid has a lid body having a sealing surface contacting the connecting surface of the connecting flange, a supply pipe which supplies an inert gas to a space between the closing lid and the valve body in the housing, a supply valve which opens or closes the supply pipe, a discharge pipe which discharges a gas in the space, and a discharge valve which opens or closes the discharge pipe. | 02-18-2010 |
| 20100034722 | Apparatus for producing trichlorosilane and method for producing trichlorosilane - An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace. | 02-11-2010 |
| 20100034721 | Method and apparatus for manufacturing trichlorosilane - An apparatus | 02-11-2010 |
| 20100032616 | MIXED MATERIAL WITH HIGH EXPANSION RATE FOR PRODUCING POROUS METALLIC SINTERED BODY - A mixed material having a high expansion rate for producing a porous metallic sintered body including: a conventional mixed material for producing a porous metallic sintered body which is formed of a mixture including a composition of 0.05 to 10% by mass of a non-water-soluble hydrocarbon-based organic solvent having 5 to 8 carbon atoms, 0.5 to 20% by mass of a water-soluble resin binder, and 5 to 80% by mass of a metal powder having an average particle size within a range of 0.5 to 500 μm, and water as the balance; and a gas, wherein the mixed material contains the gas so that the proportion of the gas is within a range of 2 to 50% by volume while the remainder is the conventional mixed material for producing a porous metallic sintered body. | 02-11-2010 |
| 20100025638 | COMPOSITION FOR FORMING TRANSPARENT ELECTROCONDUCTIVE FILM, TRANSPARENT ELECTROCONDUCTIVE FILM, AND DISPLAY - A composition includes a binder component and a conductive powder and a high-refractive-index powder both dispersed in the binder component, wherein the conductive powder includes 0.1 to 30 mass % of a tin hydroxide powder and 70 to 99.9 mass % of other conductive powder. The composition enables to form a transparent conductive film having excellent scratch resistance, excellent antistatic properties, an extremely high visible light transmittance and a controllable refractive index. Also described is the transparent conductive film. Further described is a display having the transparent conductive film on the display surface. | 02-04-2010 |
| 20100021755 | MANUFACTURING METHOD FOR A MULTI-CHANNEL COPPER TUBE, AND MANUFACTURING APPARATUS FOR THE TUBE - This manufacturing apparatus for a multi-channel tube having a plurality of parallel channels includes: a crucible; and a die set for forming the multi-channel tube from molten copper supplied from the crucible, the die set including: a hollow portion having an inner surface shaped like the profile of the multi-channel tube; punches which are inserted into the hollow portion from an inlet end of the hollow portion to define a space between the inner surface of the hollow portion and each of the punches; and a feed passage which is disposed between the crucible and the space, and configured to feed the molten copper from the crucible to the space, the molten copper being supplied from the crucible to the space within the die set through the feed passage to solidify as it passes through the hollow portion. | 01-28-2010 |
| 20100019017 | BONDING STRUCTURE AND BONDING METHOD FOR CEMENTED CARBIDE ELEMENT AND DIAMOND ELEMENT, CUTTING TIP AND CUTTING ELEMENT FOR DRILLING TOOL, AND DRILLING TOOL - A cutting tip for a drilling tool includes a cemented carbide cutting base, a diamond element supported by the cutting base, and a bonding layer formed between the cutting base and the diamond element in order to bond them. The bonding layer includes diffusion layers and in which one or two or more metals selected from a group consisting of Fe, Ni, Co, Ti, Zr, W, V, Nb, Ta, Cr, Mo, and Hf diffuses into at least one of the diamond or the cement carbide. | 01-28-2010 |
| 20100015507 | POROUS TITANIUM HAVING LOW CONTACT RESISTANCE - Porous titanium having a low contact resistance includes porous titanium body, Au, and a Ti oxide layer ( | 01-21-2010 |
| 20100014930 | CERMET INSERT AND CUTTING TOOL - One aspect of this titanium carbonitride-based cermet insert has a microstructure including 75 to 90 area % of a hard phase and the balance as a binding phase, wherein the hard phase includes a first hard phase in which a core-having structure includes a TiCN phase and a peripheral portion includes a (Ti,W,Ta/Nb)CN phase, a second hard phase including a (Ti,W,Ta/Nb)CN phase, and a third hard phase including a TiCN phase, and the binding phase contains 18 to 33% of Co, 20 to 35% of Ni, 5% or less of Ti and Ta and/or Nb, and 40 to 60 mass % of W. In another aspect of this cermet insert, a total of an amount of Ti converted as carbonitride, an amount of Ta and/or Nb converted as carbide, and an amount of W converted as carbide is 70 to 95 mass %, an amount of W converted as carbide is 20 to 35 mass %, and Co and Ni are 5 to 30 mass %, this cermet insert has a microstructure including a hard phase containing (Ti,W,Ta/Nb)CN and a binding phase containing, as main components thereof, W and Co and/or Ni, and 40 to 65 mass % of the W is contained in the hard phase. This cutting tool includes a holder and the cermet insert described above held and fixed by the holder. | 01-21-2010 |
| 20100009191 | FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, AND PRODUCTION APPARATUS THEREFOR - A method for producing fine silver particles which is characterized by making an aqueous silver ammine complex solution and a reducing agent solution come in contact with each other in an open space to reduce the silver ammine complex and deposit fine silver particles, either in which the contacting is conducted by (i) a method of spraying an aqueous silver ammine complex solution and a reducing agent solution through nozzles or (ii) a method of discharging an aqueous silver ammine complex solution and a reducing agent solution from obliquely downward nozzles opposite to each other to thereby produce fine silver particles which are free from coarse particles having particle sizes of 5 μm or more and have a mean particle size of primary particles of 0.08 to 1.0 μm and crystallite sizes of 20 to 150 nm or in which an aqueous silver ammine complex solution having a silver concentration of 20 to 180 g/L and an organic reducing agent solution having a reducing agent concentration of about 0.6 to about 1.4 times the silver concentration by reaction equivalent are used to thereby stably produce fine silver particles having a mean particle size of primary particles of 0.05 to 1.0 μm and crystallite sizes of 20 to 150 nm. | 01-14-2010 |
| 20100003089 | ROUGHING INSERT AND ROUGHING END MILL - This roughing insert is provided with an insert body, and a waveform cutting edge which is formed on an intersecting ridge line portion between a rake face and a flank face of the insert body, and which undulates along this intersecting ridge line portion. The waveform cutting edges are formed such that a portion thereof has a smaller wavelength than the remaining portion thereof. | 01-07-2010 |
| 20100000924 | REDUCING WATER PURIFICATION MATERIAL, METHOD FOR PRODUCING REDUCING WATER PURIFICATION MATERIAL, METHOD FOR TREATING WASTEWATER, AND WASTEWATER TREATMENT APPARATUS - A reducing water purification material having a reducing iron-based precipitate selected from green rust, iron ferrite, reducing iron hydroxide, and a mixture thereof. A wastewater treatment process having steps of adding a reducing iron compound to wastewater, leading the wastewater to which the reducing iron compound is added to a reaction tank and forming a precipitate, separating the formed precipitate by a solid-liquid separation to obtain a sludge, and alkalinizing all or a portion of the separated sludge to form an alkaline sludge followed by returning to the reaction tank, wherein in the precipitation step, the wastewater to which the reducing iron compound is added and the alkaline sludge are mixed and are allowed to react in a non-oxidizing atmosphere under alkaline condition to form a reducing iron compound precipitate as the precipitate, thereby incorporating contaminants in the precipitate to remove the contaminants from the wastewater. | 01-07-2010 |
| 20090324477 | METHOD FOR PRODUCING TRICHLOROSILANE AND APPARATUS FOR PRODUCING TRICHLOROSILANE - An apparatus comprising: a reaction chamber | 12-31-2009 |
| 20090314207 | APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON - An apparatus for producing polycrystalline silicon which heats a silicon seed rod in a reactor to which a raw material gas is supplied, and deposits polycrystalline silicon on the surface of the silicon seed rod, includes an electrode extending in a vertical direction to hold the silicon seed rod, an electrode holder having a cooling flow passage circulating a cooling medium formed therein, and inserted into a through-hole formed in a bottom plate of the reactor to hold the electrode, and an annular insulating material arranged between an inner peripheral surface of the through-hole and an outer peripheral surface of the electrode holder to electrically insulate the bottom plate and the electrode holder from each other. | 12-24-2009 |
| 20090297708 | APPARATUS FOR PRODUCING TRICHLOROSILANE, AND METHOD FOR PRODUCING TRICHLOROSILANE - This apparatus for producing trichlorosilane, includes a reactor provided with gas inlets and gas outlets, a plurality of silicon seed rods held in the reactor, a heating apparatus that is provided in the reactor and heats the silicon seed rods, and a raw material gas supply system that is connected to the gas inlets and capable of selecting and supplying one of a first raw material gas for depositing polycrystalline silicon which contains trichlorosilane and hydrogen gas and a second raw material gas for producing trichlorosilane which contains silicon tetrachloride and hydrogen gas, wherein when the raw material gas supply system supplies the second raw material gas into the reactor, the silicon tetrachloride and hydrogen gas are reacted to produce a reaction product gas containing trichlorosilane. | 12-03-2009 |
| 20090297425 | METALLIC SILICON AND METHOD FOR MANUFACTURING THE SAME - This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon includes: solidifying molten crude metallic silicon in a mold which contains fine silica particles in an inner peripheral layer thereof by unidirectional solidification at a rate of 1 mm/min or less; and then cooling to 200° C. or below at a rate of 2° C./min or less. | 12-03-2009 |
| 20090294087 | BRASS ALLOY AS RAW MATERIALS FOR SEMI SOLID METAL CASTING - A brass alloy as raw materials for Semi Solid Metal casting has a component composition containing Zn of 8 to 40 mass %, Zr of 0.0005 to 0.04 mass %, P of 0.01 to 0.25 mass %, and a balance of Cu and inevitable impurities, further containing one or more kinds of Si of 2 to 5 mass %, Sn of 0.05 to 6 mass %, and Al of 0.05 to 3.5 mass % as needed, and further containing one or more kinds of Pb of 0.005 to 0.45 mass %, Bi of 0.005 to 0.45 mass %, Se of 0.03 to 0.45 mass %, and Te of 0.01 to 0.45 mass %. | 12-03-2009 |
| 20090289016 | REDUCING WATER PURIFICATION MATERIAL, METHOD FOR PRODUCING REDUCING WATER PURIFICATION MATERIAL, METHOD FOR TREATING WASTEWATER, AND WASTEWATER TREATMENT APPARATUS - A reducing water purification material having a reducing iron-based precipitate selected from green rust, iron ferrite, reducing iron hydroxide, and a mixture thereof. A wastewater treatment process having steps of adding a reducing iron compound to wastewater, leading the wastewater to which the reducing iron compound is added to a reaction tank and forming a precipitate, separating the formed precipitate by a solid-liquid separation to obtain a sludge, and alkalinizing all or a portion of the separated sludge to form an alkaline sludge followed by returning to the reaction tank, wherein in the precipitation step, the wastewater to which the reducing iron compound is added and the alkaline sludge are mixed and are allowed to react in a non-oxidizing atmosphere under alkaline condition to form a reducing iron compound precipitate as the precipitate, thereby incorporating contaminants in the precipitate to remove the contaminants from the wastewater. | 11-26-2009 |
| 20090285743 | METHOD FOR PRODUCING TRICHLOROSILANE AND APPARATUS FOR PRODUCING TRICHLOROSILANE - A method and an apparatus for producing trichlorosilane comprising: producing reaction product gas containing trichlorosilane and hydrogen chloride by initiating a reaction of silicon tetrachloride and hydrogen at 900° C. to 1900° C.; preventing a reverse reaction to silicon tetrachloride and by-production of a polymer by cooling the reaction product gas discharged from the reaction chamber to 300° C. to 800° C., thereby optimizing the cooling rate of the reaction gas; preheating at least one of the silicon tetrachloride and the hydrogen introduced into the reaction chamber | 11-19-2009 |
| 20090285206 | NETWORK SYSTEM AND DATA TRANSFER METHOD - The network system of the present invention is comprises lower segments constituted in each of a plurality of organizations, floors, offices, and an upper segment that connects the lower segments together. The network system comprises an improved L2 switch that is installed in each lower segment and has a function to transmit a frame, which is transmitted from other network devices of each lower segment to the improved L2 switch itself to a center device that is installed in upper segment; and the center device that is individually connected to the improved L2 switch and controls the data communication of the frame between the improved L2 switches. According to the present invention, a network system; wherein data communication can be performed easily between the lower segments, and an ideal data transfer system which can be prepared optionally by changing the center device characteristics when necessary, can be offered. | 11-19-2009 |
| 20090283726 | METALLIC FINE PARTICLES, PROCESS FOR PRODUCING THE SAME, COMPOSITION CONTAINING THE SAME, AND USE THEREOF - A process for producing metallic fine particles is provided by, the reduction of the metallic ions performed in two steps using two types of reducing agents which significantly differ in reducing ability thereof, in which a reducing agent in which the reduction ability is strong is used in the first reduction step, and a reducing agent in which the reduction ability is weak is used in the second reduction step, and the nano-sized metallic fine particles are produced. An aqueous metallic salt solution containing a surfactant is used and a two-step reduction is performed in the same vessel, in which as the reducing agent of the first reduction process, at least one selected from the group consisting of boron hydride, dimethylamine borane, hydrazine, and ascorbic acid is used, and as the reducing agent of the second reduction process, specific alkylamine or alkanolamine is used. | 11-19-2009 |
| 20090280972 | ROLLING ROLL, ROLLING RING, ROLLING MILL, AND ROLLING ROLL ASSEMBLING METHOD - The present invention provides a rolling roll that has a shaft, which rotates around an axis and has one end that is connected to an output shaft of a rolling mill, and is configured such that a tubular sleeve member is mounted to a portion of the shaft on the side of another end, and a rolling ring, which is formed from a hard material, is fixed to an outer circumference of the sleeve member, wherein an inner circumferential support part is disposed on an outer circumferential side of the sleeve member; the rolling ring is supported by the sleeve member via the inner circumferential support part; a pressing member and a pressing mechanism are disposed on the other end side of the rolling ring; and the pressing member and the pressing mechanism press the rolling ring toward the one end side, thereby fixing it. | 11-12-2009 |
| 20090269259 | Apparatus for Producing Trichlorosilane - An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to an internal reaction passageway to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein the reaction passageway includes: a supply side passageway which is connected to the gas supply section at a central portion of the reaction vessel and flows the supply gas toward the outside while meandering in the reaction vessel; a return passageway which is connected to a downstream end of the supply side passageway and extends to the central portion of the reaction vessel; and a discharge side passageway that is disposed so as to be connected to a downstream end of the return passageway and to adjoin the supply side passageway of the central portion of the reaction vessel, the discharge side passageway being connected to the gas discharge section. | 10-29-2009 |
| 20090268922 | PERSONAL COMPUTER ADAPTOR DEVICE, PERSONAL COMPUTER SIGNAL REPRODUCING SYSTEM, PERSONAL COMPUTER REPRODUCING METHOD, PERSONAL COMPUTER SIGNAL REPRODUCING PROGRAM, OUTPUT DEVICE CONTROL PROGRAM, PERSONAL COMPUTER ADAPTOR DEVICE CONTROL PROGRAM, PERSONAL COMPUTER CONTROL PROGRAM, POWER LINE COMMUNICATION CONNECTOR DEVICE, CRADLE DEVICE USING THE SAME, AND POWER LINE COMMUNICATION REPRODUCING SYSTEM - The personal computer adaptor device is provided with an adaptor-side signal input terminal connectable to a headphone terminal for audio signals of a personal computer, a control signal output terminal connectable to a microphone terminal of the personal computer, a plug unit connectable to an outlet jack of a power line, a digital converter for converting audio signals inputted from the adaptor-side signal input terminal into digital signals, an adaptor-side power line communication transmitting unit for transmitting audio signals via the power line connected to a plug unit, an adaptor-side power line communication receiving unit for receiving control signals of the personal computer transmitted from the output device connected to the power line via the power line connected to the plug unit, and an analog converter for converting control signals into analog signals and outputting them from the control signal output terminal. | 10-29-2009 |
| 20090267215 | POWER MODULE SUBSTRATE, METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE, AND POWER MODULE - Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %. | 10-29-2009 |
| 20090264057 | DRESSER FEEDING DEVICE - A dresser supply device of a grinding tool which supplies powdery dresser to a grinding tool having an abrasive grain layer on cutting blade tips, the dresser supply device comprising: an air supply source which supplies air; a dresser supply air pipe including a base end which is connected to the air supply source; a dresser tank which holds the dresser; a dresser supply pipe which connects the dresser tank and the dresser supply air pipe to each other, is smaller in diameter than the dresser supply air pipe at a connecting portion with the dresser supply air pipe, has a first tip inserted and projecting into the dresser supply air pipe, and is located at a space from an inner peripheral surface of the dresser supply air pipe; and an opening-and-closing valve which is provided in the dresser supply air pipe between the connecting portion and the air supply source side. | 10-22-2009 |
| 20090260892 | DRILL ROD, DRILL BIT, AND DRILLING TOOL - A drill rod having a fitting portion protruding toward the distal end and of the drill rod and extending along a first axial line, wherein the fitting portion includes: a parallel male thread portion in which a minimum distance from the first axial line in a cross-section perpendicular to the first axial line is constant; and a male thread ending portion which is continuous with a proximal end of the parallel male thread portion, and in which the minimum distance increases as approaching toward a proximal end thereof; wherein the fitting portion is formed such that the minimum distance does not decrease as approaching from a distal end to a proximal end thereof; and the proximal end of the male thread ending portion is positioned on a face where a distance from the first axial line gradually increases as approaching from the parallel male thread to the proximal end of the male thread ending portion. | 10-22-2009 |
| 20090246113 | Polymer inactivation method for polycrystalline silicon manufacturing device - A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied. | 10-01-2009 |
| 20090245951 | INSERT CLAMPING WEDGE AND INSERT-DETACHABLE TYPE CUTTER - An insert clamping wedge for clamp-fixing a cutting insert, seated in an insert attachment seat formed in a cutter body, to a recessed portion formed in the insert attachment seat is provided, the insert clamping wedge including: a wedge body, wherein the insert clamping wedge is pressed into the cutter body, wherein the wedge body includes a clamp surface which comes into close contact with the cutting insert and a wedge surface of which a gap between itself and the clamp surface becomes smaller in a press-insertion direction of the wedge body, and wherein the section perpendicular to the press-insertion direction of the wedge body from the wedge surface to the clamp surface being formed in a bell shape. | 10-01-2009 |
| 20090245949 | INSERT FOR DRILL AND INDEXABLE INSERT DRILL - An insert for a drill in which one of the cutting edges respectively formed at four side ridge portions of a rake face of a square flat plate-shaped insert body is made to protrude toward the tip of the drill body of the indexable insert drill while being detachably attached is provided. Each of the cutting edges has a corner cutting edge located at a corner of the rake face, and a major cutting edge and a wiper edge which extend substantially toward one peripheral direction of the rake face from a corner cutting edge. The major cutting edge has a first major cutting edge portion which has a convexly curved shape and extends from the corner cutting edge, and a second major cutting edge portion which smoothly touches the first major cutting edge portion and extends linearly, as seen from a direction facing the rake face. The wiper edge has a straight shape intersecting the second major cutting edge portion at an obtuse angle. | 10-01-2009 |
| 20090242851 | ZnO DEPOSITION MATERIAL AND ZnO FILM FORMED OF THE SAME - A ZnO deposition material to be used for forming a transparent conductive film is composed of a ZnO pellet made of ZnO powder having a ZnO purity of 98% or more. The pellet includes one or more kinds of elements selected from the group consisting of Y, La, Sc, Ce, Pr, Nd, Pm and Sm. The ZnO pellet is polycrystal or monocrystal. The ZnO film formed by a vacuum film forming method employing the ZnO deposition material as a target material can exhibit excellent conductivity. The vacuum film forming method is preferably an electron beam vapor deposition method, an ion plating method or a sputtering method. | 10-01-2009 |
| 20090241838 | Polycrystalline silicon manufacturing apparatus - A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state where the vertically extending silicon seed rod is uprightly stood on each of the plural electrodes disposed in a bottom plate portion of the reaction furnace so as to heat the silicon seed rod and thus to deposit polycrystalline silicon on a surface of the silicon seed rod by means of the reaction of the raw gas. | 10-01-2009 |
| 20090238992 | POLYCRYSTALLINE SILICON REACTOR - A polycrystalline silicon reactor | 09-24-2009 |
| 20090238748 | Chlorosilanes purifying apparatus and chlorosilanes manufacturing method - Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container | 09-24-2009 |
| 20090232610 | END MILL - A plurality of chip discharge flutes are located on an outer periphery of a tip portion of the end mill body which rotates on its axis. Helix angles between the axis and the cutting edges in the chip discharge flutes, of which are at least one or more; are different from others. A cross-section perpendicular to the axis shows that a flute bottom face in a main flute portion forms a concavely curved shape from the rake face to a point where the flute bottom face, touches a web thickness circle of the end mill body, forms a linear shape, and goes toward the end mill rotating direction; and a flute bottom face in a sub-flute portion forms a linear shape, intersects with the flute bottom face in the main flute portion at an obtuse angle, goes further toward the end mill rotating direction. | 09-17-2009 |
| 20090229864 | INSULATING CIRCUIT BOARD AND INSULATING CIRCUIT BOARD HAVING COOLING SINK - An insulating circuit board includes an insulating plate, a circuit board joined to a first surface of the insulating plate, and a metal plate joined to a second surface of the insulating plate. The circuit board is formed from an Al alloy having a purity of 99.98% or more or pure Al, and the metal plate is formed from an Al alloy having a purity of 98.00% or more and 99.90% or less. The thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less, the thickness (b) of the metal plate is 0.6 mm or more and 1.5 mm or less, and the thicknesses satisfy the expression of a/b≦1. An insulating circuit board having a cooling sink includes cooling sink joined via a second solder layer. The second solder layer contains Sn as its main component, and has a Young's modulus, 35 GPa or more, a 0.2% proof stress of, 30 MPa or more, and a tensile strength of, 40 MPa or more. The cooling sink is formed from, pure Al or an Al alloy. | 09-17-2009 |
| 20090220403 | Method and apparatus for manufacturing trichlorosilane - A method and an apparatus for manufacturing trichlorosilane are disclosed. A polymer containing high boiling chlorosilane compounds that are generated in a polycrystalline silicon manufacturing process are mixed with hydrogen chloride and introduced into a decomposition furnace. The polymer and the hydrogen chloride are reacted at a temperature of 450° C., and preferably of 450° C. or more and 700° C. or less. Preferably a mixture containing the polymer and hydrogen chloride of 10 to 30 mass % with respect to the weight of the polymer is introduced into the decomposition furnace. | 09-03-2009 |
| 20090202404 | Apparatus for Producing Trichlorosilane - An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein a reaction passageway is formed in the interior of the reaction vessel, in which a plurality of small spaces partitioned by a plurality of reaction tubular walls that have different inner diameters and are substantially concentrically disposed communicate by flow penetration sections formed alternately in lower portions and upper portions of the reaction tubular walls in order from the inside, and the gas supply section and the gas discharge section are connected to the reaction passageway. | 08-13-2009 |
| 20090196989 | SHARP BLADE AND ITS MANUFACTURING METHOD - A sharp-edged blade of the invention includes a circular thin-plate-shaped abrasive grain layer | 08-06-2009 |
| 20090188532 | Reactor cleaning apparatus - In a reactor cleaning apparatus | 07-30-2009 |
| 20090170415 | SURFACE-COATED CUTTING TOOL WITH HARD COATING LAYER HAVING EXCELLENT ABRASION RESISTANCE - In a surface-coated cutting tool, (a) a Ti compound layer as a lower layer and (b) an α-type Al | 07-02-2009 |
| 20090169417 | SEMI-REFLECTIVE FILM AND REFLECTIVE FILM FOR OPTICAL RECORDING MEDIUM, AND Ag ALLOY SPUTTERING TARGET FOR FORMING SEMI-REFLECTIVE FILM OR REFLECTIVE FILM FOR OPTICAL RECORDING MEDIUM - A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities. | 07-02-2009 |
| 20090165704 | Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon - A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod. | 07-02-2009 |
| 20090162635 | COMPOSITE POROUS METAL BODY AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a composite porous metal body including: a sheet-like metal part containing a porous body having a three-dimensional network structure and being made of titanium or titanium alloy; and a resin part extending in an in-plane direction of the metal part and being integrally formed with the metal part. The handling property of the porous metal body is improved without sacrificing the effective area of the porous metal body. | 06-25-2009 |
| 20090162235 | MEDICAL DEVICE AND SURFACE MODIFICATION METHOD FOR MEDICAL DEVICE - The invention provides a medical device in which a metallic porous body is joined to at least a part of a surface of the main body of a medical device, and a surface modification method for the medical device. The metallic porous body is formed in multilayers. | 06-25-2009 |
| 20090158996 | APPARATUS FOR PRODUCING SINGLE CRYSTAL SILICON - An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium. | 06-25-2009 |
| 20090155140 | Apparatus for Producing Trichlorosilane - An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to an internal reaction passageway to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism having a heater that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein the heater is disposed in the center of the reaction vessel, and the reaction passageway is disposed in the periphery of the heater. | 06-18-2009 |
| 20090155138 | Apparatus for Producing Trichlorosilane - An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism that heats the interior of the reaction vessel; a storage container that stores the reaction vessel and the heating mechanism; a gas supply internal cylinder that supplies the supply gas in the reaction vessel; a gas discharge external cylinder that is substantially concentrically disposed outside the gas supply internal cylinder, forming a discharge passageway of the reaction product gas between an outer circumferential surface of the gas supply internal cylinder and an inner circumferential surface of the gas discharge external cylinder; and a cooling cylinder that supports the gas discharge external cylinder disposed inside thereof and includes a refrigerant passageway formed therein for circulating a refrigerant. | 06-18-2009 |
| 20090145642 | POWER ELEMENT MOUNTING SUBSTRATE, METHOD OF MANUFACTURING THE SAME, POWER ELEMENT MOUNTING UNIT, METHOD OF MANUFACTURING THE SAME, AND POWER MODULE - A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %. | 06-11-2009 |
| 20090143613 | POTASSIUM PERFLUOROALKANESULFONATE AND METHOD FOR PRODUCING THE SAME - This method for producing a potassium perfluoroalkanesulfonate includes an electrochemical fluorination step in which an alkanesulfonyl halide compound is subjected to electrochemical fluorination in anhydrous hydrogen fluoride, thereby to generate a production gas containing perfluoroalkanesulfonyl fluoride as the main component. In addition, for example, the methods may include a gas absorption step in which the production gas is reacted with an aqueous solution of potassium hydroxide, thereby to generate a gas absorbed solution containing potassium perfluoroalkanesulfonate, a purification step in which impurities such as potassium fluoride, potassium hydroxide, and potassium sulfate, are removed, and a concentration and collection step in which the aqueous solution from which the impurities are removed is concentrated and dried. In the electrochemical fluorination, for example, it is possible that the proton concentration in the reaction solution is maintained in the range of 150 to 1,500 ppm to suppress the formation of byproducts. | 06-04-2009 |
| 20090142246 | Method for separating and recovering conversion reaction gas - Provided is a method for separating and recovering conversion reaction gas, wherein after a conversion reaction process for producing trichlorosilane from hydrogen gas and silicon tetrachloride comprising; condensing step of cooling discharged gas, separating step of silicon tetrachloride from the condensed liquid, and recovering disilicon hexachloride. For example, the method includes a first distillation process for distilling trichlorosilane from the condensed liquid, a second distillation process for distilling silicon tetrachloride from residual liquid of the first distillation process, and a third distillation process for distilling disilicon hexachloride from residual liquid of the second distillation process. | 06-04-2009 |
| 20090136666 | Method for manufacturing polycrystalline silicon - A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition. | 05-28-2009 |
| 20090136408 | Polycrystalline silicon manufacturing apparatus and manufacturing method - A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports | 05-28-2009 |
| 20090136382 | NICKEL-BASED HEAT RESISTANT ALLOY FOR GAS TURBINE COMBUSTOR - A Ni-based heat resistant alloy for a gas turbine combustor, comprising a composition containing, in mass %, Cr: 14.0 to 21.5%, Co: 6.5 to 14.5%, Mo: 6.5 to 10.0%, W: 1.5 to 3.5%, Al: 1.2 to 2.4%, Ti: 1.1 to 2.1%; Fe: 7.0% or less, B: 0.001 to 0.020%, C: 0.03 to 0.15%, and a balance consisting of Ni and unavoidable impurities, wherein a content of S and P contained in the unavoidable impurities is controlled to be, in mass %, S: 0.015% or less, and P: 0.015% or less, wherein the alloy has a texture in which M | 05-28-2009 |
| 20090136305 | BORING TOOL AND METHOD OF BORING PILOT HOLE - A boring tool capable of accurately forming a bored hole by securing the rigidity of a reamer to prevent turn out of the reamer at high speeds and enabling an increase in life by suppressing the breakage thereof by cutting resistance. The boring tool ( | 05-28-2009 |
| 20090129881 | RING WITH CUTTING EDGE (RING-SHAPED CHAMFER TOOL) - A ring with a cutting edge detachably fixed to a drilling tool, and machines the peripheral edge of a hole bored by the drilling tool can be simply attached to the drilling tool. A ring with a cutting edge is constituted by a ring portion, in which an insertion hole allowing a drilling tool to be inserted in the direction of an axis O thereof and having a circular shape in plane view, is formed, the ring portion has a portion on the inner peripheral surface provided with a recess formed radially outward, a circular-arc arm portion, which extends in the peripheral direction from one peripheral end of the inner peripheral surface toward the other peripheral end thereof, in the opening edge of the recess facing the inner peripheral surface and is elastically deformable in the radial direction, is formed integrally in the ring portion, and the circular-arc arm portion is pressed axially inward by a fastening screw threadedly attached to a threaded attachment hole which goes through the ring portion in the radial direction, and is opened to a bottom surface of the recess. | 05-21-2009 |
| 20090123359 | Reaction apparatus for producing trichlorosilane and method for producing trichlorosilane - A reaction apparatus for producing trichlorosilane in which metal silicon powder M is reacted with hydrogen chloride gas, thus generating trichlorosilane, includes: an apparatus body into which the metal silicon powder is supplied; and an ejection port for ejecting the hydrogen chloride gas into the apparatus body from the bottom part of the apparatus body, wherein a plurality of holed pieces having a through hole penetrating in the thickness direction and a plurality of pellets interposed between these holed pieces are stacked in a mixed state on the upper side of the ejection port. | 05-14-2009 |
| 20090123328 | WIRE FOR WELDING NICKEL BASED HEAT RESISTANT ALLOY - A wire for welding Ni-based heat resistant alloy, comprising: a composition containing, in mass %, Cr: 14.0 to 21.5%, Co: 6.5 to 14.5%, Mo: 6.5 to 10.0%, W: 1.5 to 3.5%, Al: 1.2 to 2.4%, Ti: 1.1 to 2.1%; Fe: 7.0% or less, B: 0.0001 to 0.020%, C: 0.03 to 0.15%, and a balance of Ni and unavoidable impurities, wherein a content of S and P contained in the unavoidable impurities is controlled to be, in mass %, S: 0.004% or less, and P: 0.010% or less, wherein the wire has a texture in which M | 05-14-2009 |
| 20090118543 | METHOD FOR PRODUCING TRIFLUOROMETHANESULFONIC ANHYDRIDE - This method for producing trifluoromethanesulfonic anhydride reacting trifluoromethanesulfonic acid with phosphorus pentoxide to produce trifluoromethanesulfonic anhydride, wherein hardening of the reaction solution due to polyphosphoric acid, which is produced as a byproduct, is prevented by using an excess amount of trifluoromethanesulfonic acid with respect to the phosphorus pentoxide. | 05-07-2009 |
| 20090108100 | Hydrogen chrolide gas ejecting nozzle, reaction apparatus for producing trichlorosilane and method for producing trichlorosilane - There is provided a hydrogen chrolide gas ejecting nozzle I used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends. | 04-30-2009 |
