| 20110228607 | ADJUSTING PROGRAM AND ERASE VOLTAGES IN A MEMORY DEVICE - A system and apparatus for adjusting threshold program and erase voltages in a memory array, such as a floating gate memory array, for example. One such method includes applying a first voltage level to a first edge word line of a memory block string and applying a second voltage level to a second edge word line of the memory block string. Such a method might also include applying a third voltage level to non-edge word lines of the memory block string. | 09-22-2011 |
