| MICROLINK DEVICES, INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120088374 | HBT and Field Effect Transistor Integration - Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices. | 04-12-2012 |
| 20110318866 | METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film compound solar cell before it is separated from the substrate. To separate the thin film compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film compound solar cell. | 12-29-2011 |
| 20110147799 | HIGH ON-STATE BREAKDOWN HETEROJUNCTION BIPOLAR TRANSISTOR - A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage V | 06-23-2011 |
| 20100275969 | ASSEMBLY TECHNIQUES FOR SOLAR CELL ARRAYS AND SOLAR CELLS FORMED THEREFROM - An assembly technique for assembling solar cell arrays is provided. During the fabrication of a solar cell, openings through the semiconductor layer are etched through to a top surface of the backmetal layer. The solar cells include an exposed top surface of the backmetal layer. A plurality of solar cells are assembled into a solar cell array where adjacent cells are interconnected in an electrically serial or parallel fashion solely from the top surface of the solar cells. | 11-04-2010 |
| 20100237388 | HIGH ON-STATE BREAKDOWN HETEROJUNCTION BIPOLAR TRANSISTOR - A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage V | 09-23-2010 |
| 20100186822 | HIGH EFFICIENCY GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL WITH OXIDIZED WINDOW LAYER - The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer. | 07-29-2010 |
| 20100126573 | SOLAR CELL WITH A BACKSIDE VIA TO CONTACT THE EMITTER LAYER - A solar cell structure is provided for reducing shadow losses without increasing series resistance in the solar cell device. The solar cell device may form an electrical contact to a solar cell emitter layer from the backside of the solar cell device. With this structure, the emitter contact shadow losses may be reduced significantly while simultaneously decreasing device series resistance. | 05-27-2010 |
| 20090044860 | METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell. | 02-19-2009 |
| 20090038678 | THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell. | 02-12-2009 |
| 20080230806 | HBT and field effect transistor integration - Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BIFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices. | 09-25-2008 |
