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MEMC ELECTRONIC MATERIALS, S.P.A.
| MEMC ELECTRONIC MATERIALS, S.P.A. Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20110250366 | BELL JAR FOR SIEMENS REACTOR INCLUDING THERMAL RADIATION SHIELD - A bell jar for a Siemens reactor of the type used to deposit polycrystalline silicon on a plurality of heated silicon rods via chemical vapor deposition process. The bell jar includes a thermally conductive inner wall having an interior surface at least partially defining an interior space adapted to receive the plurality of heated silicon rods therein. A thermal radiation shield is in the interior space generally adjacent to and in opposing relationship with the interior surface of the inner wall. The thermal radiation shield is substantially opaque to thermal radiation emitted from the plurality of heated silicon rods in the interior space of the bell jar. | 10-13-2011 |
| 20110114469 | Process and System for the Purification of Trichlorosilane and Silicon Tetrachloride - The present disclosure relates to processes and systems for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride. | 05-19-2011 |
| 20080314728 | Process and SYSTEM for the Purification of Trichlorosilane and Silicon Tetrachloride - The invention concerns a process (and a corresponding plant) for the purification of trichlorosilane and/or silicon tetrachloride comprising the following steps of treating technical grade trichlorosilane and/or technical grade silicon tetrachloride: complexation of the boron impurities (trichloride BCI3) and other metallic impurities by addition of diphenylthiocarbazone and/or triphenylchloromethane, with the formation of complex macromolecules having high boiling point, first column distillation of the complexation step products, wherein the complexed boron impurities, together with other metallic impurities are removed as bottoms, and second column distillation of the tops of the previous distillation, wherein electronic grade trichlorosilane (plus dichlorosilane possible present) and/or silicon tetrachloride are obtained as tops and phosphorus chlorides PCI3 and phosphorus containing compounds, arsenic chlorides AsCI3 and arsenic containing compounds, aluminium compounds, antimony compounds and in general all the present metals and metalloids compounds and carbo-silanes compounds, having a certain residual amount of trichlorosilane and/or silicon tetrachloride, are obtained as bottoms. | 12-25-2008 |