| MEIJO UNIVERSITY Patent applications |
| Patent application number | Title | Published |
|---|
| 20120082613 | Method for Production of Carbon Nanotube and Method for Purification of the Same - The present invention provides a method for producing a carbon nanotube having a high purity and a method for purifying an unpurified carbon nanotube or a carbon nanotube having a low purity. The method for producing a carbon nanotube comprises a step of providing a carbonaceous material containing a carbon nanotube and a step of adding an iron material and hydrogen peroxide to the carbonaceous material to thereby purity a carbon nanotube. It is preferred that an iron powder is used as the iron material. The iron powder is preferably used in a proportion of 0.5 to 20 parts by mass relative to 100 parts by mass of the whole carbonaceous material. | 04-05-2012 |
| 20120037923 | LIGHT EMITTING DIODE ELEMENT AND METHOD FOR PRODUCING THE SAME - [PROBLEM] To provide a light emitting diode which can obtain emission at shorter wavelength side of emission range of normal 6H-type SiC doped with B and N, and a method for manufacturing the same. | 02-16-2012 |
| 20120009344 | PROCESS AND APPARATUS FOR PRODUCING COMPOSITE MATERIAL - A process and an apparatus for producing a composite material utilize a rotatable hollow body that is inclined with an upstream side being higher than a downstream side. A reaction zone is defined within an elongated chamber in the hollow body. Protrusions inwardly extend from an inner peripheral wall of the hollow body adjacent to the reaction zone. Base material is input into the chamber via a base material introduction port and a carbon source vapor is input into the chamber via a carbon source supply port. A heater heats the reaction zone to a temperature at which carbon nanotubes form on the base material from the carbon source vapor. The protrusions catch base material disposed on the inner peripheral wall of the hollow body when the hollow body rotates and then drop the base material through the reaction zone so that the base material contacts the carbon source vapor. | 01-12-2012 |
| 20100255304 | Aluminum Nitride Single Crystal Forming Polygonal Columns and a Process for Producing a Plate-Shaped Aluminum Nitride Single Crystal Using the Same - The present invention provides an aluminum nitride single crystal forming polygonal columns, the polygonal columns having the following properties [a] to [c]: | 10-07-2010 |
| 20090285745 | Method for Production of Carbon Nanotube and Method for Purification of the Same - The present invention provides a method for producing a carbon nanotube having a high purity and a method for purifying an unpurified carbon nanotube or a carbon nanotube having a low purity. The method for producing a carbon nanotube comprises a step of providing a carbonaceous material containing a carbon nanotube and a step of adding an iron material and hydrogen peroxide to the carbonaceous material to thereby purity a carbon nanotube. It is preferred that an iron powder is used as the iron material. The iron powder is preferably used in a proportion of 0.5 to 20 parts by mass relative to 100 parts by mass of the whole carbonaceous material. | 11-19-2009 |
| 20090166674 | Ultraviolet light receiving element - In an ultraviolet light receiving element using a group III nitride semiconductor, the ultraviolet light receiving element having an enhanced light receiving sensitivity is provided. An electron is excited from a valence band to a conduction band | 07-02-2009 |
| 20090065763 | LIGHT-EMITTING SEMICONDUCTOR DEVICE - The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode. | 03-12-2009 |
| 20080277670 | SiC crystal and semiconductor device - The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×10 | 11-13-2008 |
