Max Era, Inc.
|Max Era, Inc. Patent applications|
|Patent application number||Title||Published|
|20140083349||REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES - A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible.||03-27-2014|
|20130065347||SHAPED TAB CONDUCTORS FOR A PHOTOVOLTAIC CELL - A shaped tab conductor configured to allow more incident light to strike a cell substrate, improving the photovoltaic efficiency of the cell. The shaped tab conductor is configured to reduce the amount of incident light that is blocked by the tab from reaching the surface of the cell substrate. The tab may also be configured to redirect light reflected from the cell surface back to the cell surface. The cross-section of the tab conductor may be polygonal, such as a rhombus, with at least one generally planar surface that forms an acute angle with the substrate.||03-14-2013|
|20130047914||RIBBON CRYSTAL STRING FOR INCREASING WAFER YIELD - A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body.||02-28-2013|
|20130047913||Method and Apparatus for Doping by Lane in a Multi-Lane Sheet Wafer Furnace - A method and apparatus for forming a sheet wafer add material to a crucible having a feed area and a dump area, and melt the material to form a wafer growth area between the feed area and the dump area. The material is added to the feed area and removed through the dump area. The method and apparatus substantially simultaneously draw a plurality of sheet wafers from the growth area, and directly apply dopant to the melted material at the growth area. The dopant thus bypasses the feed area to dope at least a portion of the growth area.||02-28-2013|
|20130036966||RIBBON CRYSTAL END STRING WITH MULTIPLE INDIVIDUAL STRINGS - A ribbon crystal has a body and end string within the body. At least one end string has a generally concave cross-sectional shape and is formed from at least two individual strings.||02-14-2013|
|20120131957||Sheet Wafer Processing as a Function of Wafer Weight - A method and apparatus for forming a sheet wafer melts feedstock material in a crucible that is part of a crystal growth furnace, passes a plurality of filaments through the crucible to form a sheet wafer, and cuts a portion of the sheet wafer to form a smaller sheet wafer. The method and apparatus then determine the weight of the smaller sheet wafer, and control the temperature of the melted feedstock material (e.g., by controlling crucible temperature or by interfacing with another temperature control system) as a function of the determined weight.||05-31-2012|
|20120131766||Sheet Wafer Defect Mitigation - A method of forming a sheet wafer melts feedstock material in a crucible that is part of a crystal growth furnace, and passes a plurality of filaments through the crucible to form a (un-separated) sheet wafers. A plurality of sheet wafers may be formed in different lanes in the crucible. One or more vision systems is used, during growth, to determine if a sheet wafer has a defective condition. If a defect is detected, then any of a variety of corrective actions may be taken, such as activating a cutting device to remove at least a portion of the sheet wafer, assessing the defect and grading a portion of the sheet wafer (e.g., for sorting based on grade), and/or producing an indicia. In a multiple-lane embodiment, a defect may be attended to in one lane while sheet growth continues in one or more other lanes.||05-31-2012|
Patent applications by Max Era, Inc.