Matheson Tri-Gas, Inc. Patent applications |
Patent application number | Title | Published |
20140060571 | IN-SITU GENERATION OF THE MOLECULAR ETCHER CARBONYL FLUORIDE OR ANY OF ITS VARIANTS AND ITS USE - The molecular etcher carbonyl fluoride (COF | 03-06-2014 |
20140045324 | LOW TEMPERATURE EPITAXY OF A SEMICONDUCTOR ALLOY INCLUDING SILICON AND GERMANIUM EMPLOYING A HIGH ORDER SILANE PRECURSOR - A high order silane having a formula of Si | 02-13-2014 |
20130133519 | REMOVAL OF IMPURITIES FROM HYDROGEN-CONTAINING MATERIALS - Methods of purifying hydrogen-containing materials are described. The methods may include the steps of providing a purifier material comprising silica. The silica may be heated at temperature of about 100° C. or more in a dry atmosphere to form activated silica. The activated silica may be contacted with a starting hydrogen-containing material, where the activated silica reduces a concentration of one or more impurity from the starting hydrogen-containing material to form the purified hydrogen-containing material, and where the activated silica does not decompose the purified hydrogen-containing material. | 05-30-2013 |
20120024223 | Thin films and methods of making them using cyclohexasilane - Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. | 02-02-2012 |
20120003819 | Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material - The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. | 01-05-2012 |
20110140850 | REAL TIME TRACKING AND MONITORING OF GAS CYLINDERS - A gas cylinder transport cap is described. The cap has a bottom opening adapted for reversible attachment to a gas cylinder, where the attached cap surrounds a cylinder valve coupled to the gas cylinder. The cap also has a side surface which at least in part defines the perimeter of the bottom opening, where the side surface include a plurality of side openings; and a top surface formed on an opposite side of the cap from the bottom surface, where the top surface includes a top opening. The side openings and top opening improve transmissions of radio-frequency signals from a RFID device positioned inside the cylinder cap when the cap is attached to the gas cylinder. A method of tracking a gas cylinder transported between a first and second location is also described. The method may include the steps of coupling the gas cylinder to a RFID device, loading the gas cylinder on a transportation vehicle, and reading a gas cylinder identification signal transmitted by the RFID device with an RFID signal reader that translates the signal into gas cylinder identification data. The gas cylinder identification data may be associated with location data provided by a GPS device located in the transportation vehicle. The identification and location data may be communicated to gas cylinder tracking system that is remote from the transportation vehicle. | 06-16-2011 |
20110088718 | CHAMBER CLEANING METHODS USING FLUORINE CONTAINING CLEANING COMPOUNDS - Methods of cleaning a process chamber used to fabricate electronics components are described. The methods may include the step of providing a cleaning gas mixture to the process chamber, where the cleaning gas mixture may include a fluorine-containing precursor, and where the cleaning gas mixture removes contaminants from interior surfaces of the processing chamber that are exposed to the cleaning gas mixture. The methods may also include the steps of removing the reaction products of the cleaning gas mixture from the process chamber, and providing a substrate to the process chamber following the evacuation of the reaction products from the process chamber. The cleaning gas mixture may include one or more hydrofluoronated ethers, and the contaminants may include one or more tin-containing contaminants. | 04-21-2011 |
20110073136 | REMOVAL OF GALLIUM AND GALLIUM CONTAINING MATERIALS - Methods of removing gallium and gallium-containing materials from surfaces within a substrate processing chamber using a cleaning mixture are described. The cleaning mixture contains an iodine-containing compound and is introduced into the processing chamber. Iodine reacts with gallium resident within the chamber to produce thermally volatile Gal | 03-31-2011 |
20110070371 | FLUORINE COMPOUNDS FOR DOPING CONDUCTIVE OXIDE THIN FILMS - Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate. | 03-24-2011 |
20110059617 | HIGH ASPECT RATIO SILICON OXIDE ETCH - Methods of etching high-aspect-ratio features in dielectric materials such as silicon oxide are described. The methods may include a concurrent introduction of a fluorocarbon precursor and an iodo-fluorocarbon precursor into a substrate processing system housing a substrate. The fluorocarbon precursor may have a F:C atomic ratio of about 2:1 or less, and the iodo-fluorocarbon may have a F:C ratio of about 1.75:1 to about 1.5:1. Exemplary precursors may include C | 03-10-2011 |
20110056515 | NF3 CHAMBER CLEAN ADDITIVE - Methods of cleaning a processing chamber with nitrogen trifluoride (NF | 03-10-2011 |
20100223208 | FLUID STORAGE AND PURIFICATION METHOD AND SYSTEM - A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel. | 09-02-2010 |
20100154630 | ACETYLENE PROCESS GAS PURIFICATION METHODS AND SYSTEMS - Methods and systems of purifying an acetylene process gas are described. The methods may include the steps of providing an acetylene vessel containing source acetylene mixed with a solvent impurity, and flowing the source acetylene through a purification container that holds a cooled purifying medium, where at least a portion of the solvent impurity in the source acetylene separates as a liquid impurity on the purifying medium. The method may also include removing the liquid from the purification container and flowing a purified acetylene gas from the purification container. The purified acetylene gas has a concentration of the solvent impurity of about 5 vol. % or less, and the separated liquid impurity is removed without interrupting the flow of the acetylene while the purified acetylene gas flows from the purification container to keep the concentration of the solvent impurity substantially constant in the purified acetylene gas. | 06-24-2010 |
20090317317 | Fluid Storage and Purification Method and System - A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel. | 12-24-2009 |
20090282975 | REMOVAL OF IMPURITIES FROM HYDROGEN-CONTAINING MATERIALS - Methods of purifying hydrogen-containing materials are described. The methods may include the steps of providing a purifier material comprising silica. The silica may be heated at temperature of about 100° C. or more in a dry atmosphere to form activated silica. The activated silica may be contacted with a starting hydrogen-containing material, where the activated silica reduces a concentration of one or more impurity from the starting hydrogen-containing material to form the purified hydrogen-containing material, and where the activated silica does not decompose the purified hydrogen-containing material. | 11-19-2009 |
20090025456 | Leak Characterization Apparatuses and Methods for Fluid Storage Containers - An apparatus for determining a leak rate of a gas from a closed valve is disclosed. The apparatus may include a vacuum pump, a pressure measuring device, a monitoring device, and a computer. The vacuum pump may be configured to couple downstream of the closed valve and decrease the pressure of the downstream side of the closed valve. The pressure measuring device may be configured to couple with the downstream side and determine the pressure. The monitoring device may be configured to couple with the downstream side and monitor a gas, where the gas may be emitted from the closed valve and be characterized by a mass. The monitoring device may further be configured to determine the mass. The computer may be configured to control the vacuum pump based on the pressure, and determine the leak rate of the gas based at least in part on the mass. | 01-29-2009 |
20090025455 | Leak Characterization Apparatuses and Methods for Fluid Storage Containers - According to the invention, an apparatus to characterize leaks in a fluid storage container is disclosed. The apparatus may include a valve coupler, a gas manifold and a processor. The valve coupler may couple the apparatus with a closed valve on the fluid storage container. The gas manifold may be coupled with the valve coupler and may include a first branch connected with a gas monitoring device. The gas monitoring device may scan for a plurality of gases that may be emitted by the closed valve of the fluid storage container. The processor may be operable to receive gas monitoring device data representing masses for one or more of the plurality of gases detected by the monitor. | 01-29-2009 |
20080307858 | Apparatus and Process for Leak-Testing and Qualification of Fluid Dispensing Vessels | 12-18-2008 |
20080211118 | FLUID STORAGE AND DISPENSING APPARATUS - A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel. | 09-04-2008 |
20080210633 | FLUID STORAGE AND PURIFICATION METHOD - A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel. | 09-04-2008 |