| MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) Patent applications |
| Patent application number | Title | Published |
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| 20100002739 | LENS COUPLED QUANTUM CASCADE LASER - Terahertz quantum cascade (QC) devices are disclosed that can operate, e.g., in a range of about 1 THz to about 10 THz. In some embodiments, QC lasers are disclosed in which an optical element (e.g., a lens) is coupled to an output facet of the laser's active region to enhance coupling of the lasing radiation from the active region to an external environment. In other embodiments, terahertz amplifier and tunable terahertz QC lasers are disclosed. | 01-07-2010 |
| 20090245322 | OPTICAL CHARACTERIZATION OF PHOTONIC INTEGRATED CIRCUITS - In one aspect, the present invention provides techniques and apparatus for optical characterization of photonic devices and/or circuits. By way of example, the techniques can be used to identify damaged devices in photonic integrated circuits. In some embodiments, thermal imaging is employed as a diagnostic tool for characterizing the devices/circuits under investigation. For example, in one embodiment, integrated cascaded semiconductor amplifiers can be characterized using amplified spontaneous emission from one amplifier as a thermal modulation input to another amplifier. A thermoreflectance image of the second amplifier can reveal flaws, if present. Further, in some embodiments, thermal imaging in conjunction with a total energy model can be employed to characterize the elements of photonic circuits optically and/or to map the optical power distribution throughout the circuits. | 10-01-2009 |
| 20090068465 | NANOCOMPOSITES WITH HIGH THERMOELECTRIC FIGURES OF MERIT - The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k | 03-12-2009 |
| 20080202575 | METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS - Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed. | 08-28-2008 |
