| MARUZEN PETROCHEMICAL CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120071638 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography - A copolymer for positive type lithography, having at least a recurring unit (A) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (A) | 03-22-2012 |
| 20120022219 | VINYL ETHER-BASED STAR POLYMER AND PROCESS FOR PRODUCTION THEREOF - Provided is a vinyl ether-based star polymer which has an arm including a vinyl ether polymer and an arm including an oxystyrene polymer. Also provided is a process for producing the star polymer, which can be continuously carried out in a series of steps. Said vinyl ether-based star polymer and process for producing the same are such that the polymer includes a core and polymer-chain arm portions extending from the core, in which an arm portion including vinyl ether repeating units and an arm portion including oxystyrene repeating units are provided. | 01-26-2012 |
| 20110198346 | FUNCTIONAL-CONTAINER FORMING METHOD, MOLDING DIE, AND FUNCTIONAL CONTAINER PRODUCED BY THOSE - It is an object of the present invention to provide a functional-container forming method and a molding die which can produce a functional container at a low cost and a high throughput without using a bond, and, a functional container produced by utilizing those. A functional-container forming method for forming a casing part on a bottom-face member having a predetermined functional surface, the functional-container forming method comprising the steps of: forming a protection region that suppresses a deterioration of a function of the functional surface between the functional surface and a molding die; and performing a molding by filling a melted resin in a cavity formed between the molding die and the bottom-face member. | 08-18-2011 |
| 20100324245 | COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PRODUCING METHOD THEREOF, AND COMPOSITION - In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided. | 12-23-2010 |
| 20100310830 | Etching Mask, Base Material Having Etching Mask, Finely Processed Article, And Method For Production Of Finely Processed Article - There are provided an etching mask which has a superior thermal imprinting characteristic and also a good anti-etching characteristic, a base material with the etching mask, a microfabricated product to which those etching mask and base material are applied, and a production method of the microfabricated product. The etching mask formed of a thermoplastic resin containing at least one kind of skeleton expressed by a chemical formula (1) or a chemical formula (2) in a main chain wherein R | 12-09-2010 |
| 20100304087 | Mold, Fine Pattern Product, and Method of Manufacturing Those | 12-02-2010 |
| 20100286351 | ABA TRIBLOCK COPOLYMER AND PROCESS FOR PRODUCING THE SAME - To provide a novel ABA-type triblock copolymer of vinyl ether series, comprising polyvinyl ether and an oxystyrene-series unit, and a process of producing the ABA-type copolymer at a series of steps. The invention relates to a novel ABA-type triblock copolymer comprising Segment A comprising an oxystyrene-series repeat unit (a) and Segment B comprising a vinyl ether-series repeat unit (b), in which the Segment A and the Segment B are bonded together with a single bond, and to a simple process of producing the same. The triblock copolymer can be produced at a series of steps in a simple manner, comprising living cationic polymerization of a vinyl ether-series monomer such as ethyl vinyl ether in the presence of a bifunctional initiator and a Lewis acid, and subsequently adding an oxystyrene-series monomer such as p-hydroxystyrene for living cationic polymerization. | 11-11-2010 |
| 20100249465 | PROCESS FOR PRODUCTION OF HIGH-PURITY VINYL ETHER - A process for producing a high-purity vinyl ether, which comprises:
| 09-30-2010 |
| 20100222526 | METHOD FOR PRODUCING A COPOLYMER FOR PHOTORESIST - The present invention provides a method for production of a copolymer for photoresists in which the bias of the monomer composition ration is small. This method for production is a method for production of a copolymer for photoresists, which copolymer containing at least two types of repeating units, the method having a supplying step of supplying a monomer solution and a solution containing a polymerization initiator into a polymerization reaction system, wherein the range of fluctuation of the monomer composition ratio of unreacted monomers is within the range between minus 15% and plus 15% or the standard deviation of the monomer composition ratio of unreacted monomers is within 2 in the polymerization reaction system during the period from the start of the polymerization reaction to the end of supplying of the monomer solution. | 09-02-2010 |
| 20100189985 | THERMAL-IMPRINTING RESIN, THERMAL-IMPRINTING-RESIN SOLUTION, THERMAL-IMPRINTING INJECTION-MOLDED BODY, THERMAL-IMPRINTING THIN FILM AND PRODUCTION METHOD THEREOF - There are provided a thermal-imprinting resin which has a good heat-deterioration tolerability and a low resin elastic modulus at the time of fluidization in order to suppress any production of particle-like materials in microfabrication by thermal imprinting, and has a good fine-pattern transfer characteristic, a thermal-imprinting-resin solution using the same, a thermal-imprinting injection-molded body using the same, a thermal-imprinting thin film using the same and a production method thereof. The thermal-imprinting resin has an exothermic onset temperature (oxidation onset temperature) of an exothermic peak due to oxidation greater than or equal to +35° C. to the glass transition temperature of the resin in differential scanning calorimetric measurement at a temperature rise rate of 5° C./min in air, and has a complex modulus less than 0.24 MPa at the glass transition temperature of the resin +35° C. in a dynamic viscoelastic modulus measurement at a frequency of 1 rad/sec in nitrogen stream. The thermal-imprinting-resin solution, the thermal-imprinting injection-molded body, the thermal-imprinting thin film and the production method thereof use the foregoing resin. | 07-29-2010 |
| 20100189984 | THERMAL-IMPRINTING RESIN SOLUTION, THERMAL-IMPRINTING RESIN THIN FILM, AND METHOD OF MANUFACTURING THOSE - There are provided a resin solution substantially applicable to thermal imprinting, a thin film thereof, and manufacturing methods of those. A thermal imprinting resin solution for forming a thin film used for thermal imprinting applications comprises a thermoplastic resin and greater than or equal to at least one kind of solvent which can dissolve the resin, and an containing amount of foreign particles having a grain diameter larger than or equal to 0.2 μm is controlled to be less than 3000 particles/cm | 07-29-2010 |
| 20100143842 | METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY - A method of producing a copolymer solution for semiconductor lithography having a copolymer and a solvent for coating film formation, which copolymer contains at least one repeating unit selected from the group consisting of: a repeating unit (A) having a hydroxyl group; a repeating unit (B) having a structure in which a hydroxyl group is protected by a group which suppresses dissolution into an alkaline developer and which dissociates in the action of an acid; a repeating unit (C) having a lactone structure; and a repeating unit (D) having a cyclic ether structure, the difference in the copolymer concentration among a plurality of containers which were filled with copolymer solution from the same manufacturing lot is not more than a certain range, or the method includes a certain production step. | 06-10-2010 |
| 20100048848 | PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY - To provide a method for producing a polymer for semiconductor lithography which can attain high uniformity in the polymer from lot to lot. | 02-25-2010 |
| 20100047710 | COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS - The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer. | 02-25-2010 |
| 20100019410 | Resin for Thermal Imprinting - A cyclic-olefin-based thermoplastic resin for thermal imprint to be used in the production of a sheet or a film which contains at least one of skeletons represented by the following chemical equation 1 or the following chemical equation 2 in a main chain. The glass transition temperature Tg (° C.) and the value ([M]) of MFR at 260° C. satisfy the following equation 1, and [M]<30. The thermal imprint characteristics (transferability, mold release characteristic, and the like) are superior and the productivity (throughput) is improved. | 01-28-2010 |
| 20100013122 | Resin for Thermal Imprint - A resin for thermal imprint comprises a cyclic-olefin-based thermoplastic resin that contains at least one of skeletons represented by the following chemical equation 1 or the following chemical equation 2 in a main chain. The glass transition temperature Tg (° C.) and the value ([M]) of MFR at 260 ° C. satisfy the following equation 1, and [M]>10. The thermal imprint characteristics (transferability, mold release characteristic, and the like) are superior and the productivity (throughput) is improved. | 01-21-2010 |
| 20090306328 | COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME - To provide a copolymer for semiconductor lithography employed for forming a resist film as well as thin films such as an anti-reflection film, a gap-filling film, a top coating film, etc. which are formed on or under a resist film, these films being employed in semiconductor lithography, wherein the copolymer has excellent solubility in a solution of a thin film-forming composition and prevents generation of microparticles (e.g., microgel) and pattern defects, and to provide a method for producing the copolymer reliably on an industrial scale. | 12-10-2009 |
