| MAGNACHIP SEMICONDUCTOR, LTD. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120112656 | PWM SIGNAL GENERATING CIRCUIT FOR DC-DC CONVERTER USING DIMMING SIGNAL AND LED DRIVER CIRCUIT USING THE SAME IN DIGITAL PWM METHOD HAVING FIXED PHASE MODE - A PWM signal generating circuit and method, and an LED driver circuit using same, is disclosed. The PWM signal generating circuit generates a PWM signal for a DC-DC converter using a dimming signal, and includes an oscillator which generates a first clock signal having a predetermined frequency, a synchronizing unit which synchronizes the dimming signal to the first clock signal, and a PWM signal generating unit which generates the PWM signal in response to the first clock signal having a falling edge while the synchronized dimming signal is on. | 05-10-2012 |
| 20120112655 | PWM SIGNAL GENERATING CIRCUIT FOR DC-DC CONVERTER USING DIMMING SIGNAL AND LED DRIVING CIRCUIT HAVING THE SAME IN DIRECT DIGITAL DIMMING METHOD - An LED driving circuit is provided. The LED driving circuit includes an input unit which receives an input dimming signal for driving an LED array, a PWM signal generating unit which extends an on-period of the input dimming signal to form an extended dimming signal, and generates a PWM signal using the extended dimming signal, a DC-DC converter which supplies output voltage to the LED array using the PWM signal, and an LED driving unit which drives the LED array using the input dimming signal. | 05-10-2012 |
| 20120104564 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a multi-depth trench is formed, the multi-depth trench including a shallow trench and a deep trench arranged below the shallow trench, a first dielectric material formed in partial area of the multi-depth trench, the first dielectric material including a slope in the shallow trench that extends upward from a corner where a bottom plane of the shallow trench and a sidewall of the deep trench meets, the slope being inclined with respect to the bottom plane of the shallow trench, and a second dielectric material formed in areas of the multi-depth trench in which the first dielectric material is absent. | 05-03-2012 |
| 20120028394 | IMAGE SENSOR AND METHOD FOR FABRICATING SAME - An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode. | 02-02-2012 |
| 20120026152 | OVER-DRIVABLE OUTPUT BUFFER, SOURCE DRIVER CIRCUIT HAVING THE SAME, AND METHODS THEREFOR - Provided is an output buffer for a source driver circuit which receives an external buffer input signal and generates a buffer output signal having a predetermined target voltage, the output buffer including: an over-driving controller configured to generate a pair of first internal buffer input signals and a pair of second internal buffer input signals for an over-driving operation, based on a first over-driver enable signal and a second over-driver enable signal, the first and second over-driver signals being provided from an external source, and an output buffer unit configured to: perform the over-driving operation, based on the pair of first internal buffer input signals and the pair of second internal buffer input signals provided from the over-driving controller, and generate: a buffer output signal including a target voltage greater than the predetermined target voltage, or a buffer output signal including a target voltage less than the predetermined target voltage. | 02-02-2012 |
| 20110267387 | CIRCUIT AND METHOD FOR DRIVING A LIGHT EMITTING DIODE FOR A BACKLIGHT, AND BACKLIGHT DRIVING APPARATUS USING THE SAME - A circuit and method for driving a light emitting diode for a backlight, and a backlight driving apparatus using the same is provided. A circuit for driving a light emitting diode (LED) for a backlight includes a filtering unit configured to receive a pulse width modulation (PWM) signal and remove noise of a predetermined band, a duty stabilization unit configured to stabilize a duty of a PWM signal filtered by the filtering unit, a dimming signal generation unit configured to generate a dimming signal based on a PWM signal stabilized by the duty stabilization unit, and an LED driving unit configured to drive the LED for the backlight based on the dimming signal generated by the dimming signal generation unit. | 11-03-2011 |
| 20110227502 | CIRCUIT AND METHOD FOR GENERATING PWM SIGNAL FOR DC-DC CONVERTER USING DIMMING SIGNAL AND LED DRIVING CIRCUIT FOR BACKLIGHT HAVING THE SAME - A pulse width modulation (PWM) signal generating circuit that generates a PWM signal for a DC-DC converter using a dimming signal is provided. The PWM signal generating circuit includes a normal PWM signal generator configured to generate a normal PWM signal based on a clock signal provided to the DC-DC converter, and a compensation PWM signal generator configured to generate a compensation PWM signal based on the clock signal and the dimming signal. | 09-22-2011 |
| 20110227202 | SILICON WAFER AND FABRICATION METHOD THEREOF - A silicon wafer and fabrication method thereof are provided. The silicon wafer includes a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer, the first denuded zone being formed with a depth ranging from approximately 20 μm to approximately 80 μm from the top surface, and a bulk area formed between the first denuded zone and a backside of the silicon wafer, the bulk area having a concentration of oxygen uniformly distributed within a variation of 10% over the bulk area. | 09-22-2011 |
| 20110204963 | SEMICONDUCTOR DEVICE - A semiconductor device is provided, including a charge-pumping unit configured to charge-pump power voltage in every period of a pumping clock to generate pumping voltage, a first voltage level detection unit configured to detect a maximum voltage level of the generated pumping voltage, a second voltage level detection unit configured to detect a minimum voltage level of the generated pumping voltage, and a pumping clock generating unit configured to generate the pumping clock, the pumping clock having a frequency that is adjusted in response to an output signal of the first and the second voltage level detection units. | 08-25-2011 |
| 20110199353 | SHIFT REGISTER CIRCUIT, SOURCE DRIVER INCLUDING THE SAME, AND METHOD - A shift register circuit and method includes: a plurality of shift registers configured to generate latch clock signals by sequentially shifting input signals according to first and second clock signals, the first and second clock signals including: periods longer than a shift register clock signal, and phases different from each other, wherein odd shift registers among the plurality of shift registers are configured to be driven by the first clock signal, and wherein even shift registers are configured to be driven by the second clock signal. | 08-18-2011 |
| 20110148481 | WAVEFORM GENERATION CIRCUIT - A waveform generation circuit includes: a waveform generation block configured to generate a waveform signal corresponding to a driving control signal; and a control signal generation block configured to generate a driving control signal for compensating the waveform signal for an environmental factor reflected into the waveform generation circuit. | 06-23-2011 |
| 20110148384 | CIRCUIT FOR GENERATING BOOSTED VOLTAGE AND METHOD FOR OPERATING THE SAME - A boosted voltage generation circuit may include: a boosting circuit configured to boost an input voltage based on a boosting rate and output a boosted voltage, a boosting rate setting unit configured to receive a feedback on a level of the input voltage and set a boosting rate, and an input voltage level setting unit configured to set the level of the input voltage in response to a target level of the boosted voltage and the boosting rate. | 06-23-2011 |
| 20110115020 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. | 05-19-2011 |
| 20110115016 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end ;portion thereof extending over the isolation layer. | 05-19-2011 |
| 20110109375 | CHARGE PUMP APPARATUS AND CHARGE PUMPING METHOD - A charge pumping method includes: generating a first boosted voltage by boosting an input voltage by a boosting mode of a first multiplier; changing the level of a voltage charged in at least one capacitor provided in the inside of a charge pump circuit, in preparation for a change in the boosting mode; and generating a second boosted voltage by boosting the input voltage by a boosting mode of a second multiplier. | 05-12-2011 |
| 20110108951 | SEMICONDUCTOR DEVICE WITH MIM CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a lower electrode formed on a substrate, a dielectric layer including an etched dielectric region and an as-grown dielectric region formed on the lower electrode, an upper electrode formed on the as-grown dielectric region, a hardmask formed on the upper electrode, a spacer formed at a side surface of the hardmask and the upper electrode and over a surface of the etched dielectric region, and a buffer insulation layer formed on the hardmask and the spacer. | 05-12-2011 |
| 20110079875 | ANTI-FUSE AND METHOD FOR FORMING THE SAME, UNIT CELL OF NON VOLATILE MEMORY DEVICE WITH THE SAME - There is provided an anti-fuse, including a gate dielectric layer formed over a substrate, a gate electrode, including a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer, and a junction region formed in a portion of the substrate exposed by sidewalls of the one or more protruding portions. | 04-07-2011 |
| 20110069232 | DEVICE AND METHOD FOR DRIVING DISPLAY PANEL - An apparatus for driving a display panel includes: a time variant signal (TVS) generator configured to generate a time variant signal group; a common pulse signal generator configured to generate a plurality of pulse signals; a selector configured to receive the time variant signal, the plurality of the pulse signals, and video data and select a grayscale voltage corresponding to the video data; and a buffer configured to buffer and transfer an output of the selector. Herein, the selector and the buffer are provided to each of a plurality of channels, and the time variant signal and the plurality of the pulse signals are inputted in common to the selector of each channel. | 03-24-2011 |
| 20100258865 | TRANSISTOR HAVING RECESS CHANNEL AND FABRICATING METHOD THEREOF - A transistor includes a substrate including a trench, an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench, a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer, and a gate electrode filled in the trench. | 10-14-2010 |
| 20100144109 | TRANSISTOR IN A SEMICONDUCTOR SUBSTRATE HAVING HIGH-CONCENTRATION SOURCE AND DRAIN REGION FORMED AT THE BOTTOM OF A TRENCH ADJACENT TO THE GATE ELECTRODE - The present invention relates to a transistor in a semiconductor device and method of manufacturing the same. Trenches are formed in a semiconductor substrate at gate edges. Low-concentration impurity regions are then formed at the sidewalls and the bottoms of the trenches. High-concentration impurity regions are formed at the bottoms of the trenches in a depth shallower than the low-concentration impurity regions. Source/drain consisting of the low-concentration impurity regions and the high-concentration impurity regions are thus formed. Therefore, the size of the transistor can be reduced while securing a stabilized operating characteristic even at high voltage. It is thus possible to improve reliability of the circuit and the degree of integration in the device. | 06-10-2010 |
| 20100066418 | DIFFERENTIAL CURRENT DRIVING TYPE DATA TRANSMISSION SYSTEM - A differential current driving type data transmission system includes a line drive controller for outputting differential transmission signals and common mode line control signals, in response to a transmission signal; current sources for generating an excitation current and a base current and for driving positive/negative transmission lines with the base current; a first switch for selectively switching the excitation current to the positive/negative transmission lines, in response to the differential transmission signals; and a second switch for equalizing the positive/negative transmission lines within a common mode interval, in response to the common mode line control signals, wherein, in the common mode, the positive/negative transmission lines are driven at a level above or below an intermediate current level by a predetermined common mode current difference. | 03-18-2010 |
| 20090026510 | Image sensor and method for fabricating the same - An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode. | 01-29-2009 |
| 20080317363 | METHOD AND APPARATUS FOR IMAGE DATA PROCESSING - An image data processing apparatus includes an encoding unit, a storage unit, a decoding unit and a Digital-to-Analog (D/A) converter. The encoding unit receives image data, compares (2n−1)th pixel data with (2n)th pixel data, and creates a header value, an encoding value and a reference value, which are used to encode the pixel data. The storage unit is connected to the encoding unit, and stores the header value, the encoding value and the reference value, which are created by the encoding unit. The decoding unit is connected to the storage unit, and restores the (2n−1)th pixel data and the (2n)th pixel data using the header value, the encoding value and the reference value. The D/A converter is connected to the decoding unit, converts the restored image data into analog signals, and outputs the analog signals. | 12-25-2008 |
| 20080204583 | Adapted piecewise linear processing device - A piecewise linear processing device applies different amplification rates according to a general environment and a low luminance environment where much noise exists. The piecewise linear processing device includes a knee point storing unit configured to store a user's default setting value and low luminance setting value; a luminance detecting unit configured to detect a noisy environment to output a current luminance information signal and a maximum luminance information signal; an adaptive knee point supply unit configured to receive the default setting value, the low luminance setting value, the current luminance information signal, and the maximum luminance information signal to supply a adjusted adaptive knee point according to a degree of noise; and a piecewise linear processing unit configured to apply a section amplification rate to an input data on the basis of a region corresponding to the adaptive knee point. | 08-28-2008 |
