MACRONIX INTERNATIONAL CO.,LTD. Patent applications |
Patent application number | Title | Published |
20100290293 | METHOD OF IDENTIFYING LOGICAL INFORMATION IN A PROGRAMMING AND ERASING CELL BY ON-SIDE READING SCHEME - A method of identifying logical information in a cell, particularly in a programming by hot hole injection nitride electron storage (PHINES) cell by one-side reading scheme is disclosed. The method comprise steps of: erasing the first region and the second region of PHINES cell by increasing a local threshold voltage (Vt) to a certain value; programming at least one of the first region and the second region of the PHINES cell by hot hole injection; and reading a logical state of the PHINES cell by measuring an output current of one of the first region and the second region; wherein different quantity of the output current is caused by interaction between different quantity of the hot hole stored in the first region and the second region, so as to determine the logical state of the PHINES cell by one-side reading scheme. | 11-18-2010 |
20090279343 | OPERATING METHOD OF ELECTRICAL PULSE VOLTAGE FOR RRAM APPLICATION - Metal-oxide based memory devices and methods for operating and manufacturing such devices are described herein. A method for manufacturing a memory device as described herein comprises forming a metal-oxide memory element, and applying an activating energy to the metal-oxide memory element. In embodiments the activating energy can be applied by applying electrical and/or thermal energy to the metal-oxide material. | 11-12-2009 |