| LPE S.p.A. Patent applications |
| Patent application number | Title | Published |
|---|
| 20100307417 | Manufacturing device for silicon carbide single crystal - A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber. The heating chamber is disposed on an upstream side of a flowing passage of the gas from the reaction chamber. The heating chamber includes a hollow cylindrical member, a raw material gas inlet, a raw material gas supply nozzle and multiple baffle plates. The inlet introduces the gas into the hollow cylindrical member. The nozzle discharges the gas from the hollow cylindrical member to the reaction chamber. The baffle plates are arranged on the flowing passage of the gas between the inlet and the nozzle. | 12-09-2010 |
| 20100037825 | DIFFERENTIATED-TEMPERATURE REACTION CHAMBER - The present invention relates to a reaction chamber ( | 02-18-2010 |
| 20080210169 | System for Supporting and Rotating a Susceptor Inside a Treatment Chamber of a Wafer Treating Apparatus - The present invention relates to a system for supporting and rotating a susceptor within the treatment chamber of a wafer treatment apparatus comprising a support member ( | 09-04-2008 |
| 20080202424 | Device For Introducing Reaction Gases Into A Reaction Chamber And Epitaxial Reactor Which Uses Said Device - The present invention relates to a device ( | 08-28-2008 |
| 20080199281 | Vacuum System For Wafer Handling - The present invention relates to a system for handling wafers (W) within a treatment apparatus ( | 08-21-2008 |
