| LIGADP CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20110143016 | TEMPERATURE CONTROL METHOD FOR CHEMICAL VAPOR DEPOSITION APPARATUS - Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution. | 06-16-2011 |
| 20110086496 | METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD - A metal organic chemical vapor deposition apparatus includes reaction chambers in which nitride layers is deposited on a substrate using a group III-V material, a buffer chamber connected to the reaction chambers and in which a transfer robot is disposed to transfer the substrate into the reaction chambers, a gas supply device configured to selectively supply one or more of hydrogen, nitrogen, and ammonia gases into the buffer chamber so that when the buffer chamber communicates with one of the reaction chambers, the buffer chamber has the same atmosphere as an atmosphere of the reaction chamber, and a heater disposed in the buffer chamber. Nitride layers are deposited on a substrate in the reaction chambers, and the temperature and gas atmosphere of the buffer chamber are adjusted such that when the substrate is transferred, epitaxial layers formed on the substrate can be stably maintained. | 04-14-2011 |
| 20110041769 | APPARATUS FOR CHEMICAL VAPOR DEPOSITION AND APPARATUS FOR PROCESSING SUBSTRATE - Provided are a chemical vapor deposition (CVD) apparatus and a substrate processing apparatus. The CVD apparatus includes a chamber defining a processing chamber for forming a thin film on a substrate, a shower head that discharges processing gas into the processing chamber, a lid for opening and closing the chamber, a hinge part that pivotably couples the lid to the chamber at one side of the lid, a clamping part is provided to press the other side of the lid to secure the lid to the chamber, and a control part adapted to raise or lower the one side of the lid when the clamping part is pressing the other side of the lid. | 02-24-2011 |
| 20110027480 | CHEMICAL VAPOR DEPOSITION APPARATUS CAPABLE OF CONTROLLING DISCHARGING FLUID FLOW PATH IN REACTION CHAMBER - A chemical vapor deposition apparatus is equipped to control the width of a gas discharge path between a susceptor and an inner surface of a chamber without having to resort to redesign and remanufacturing of the apparatus. The chemical vapor deposition apparatus includes: a chamber; a susceptor positioned inside the chamber and on which a substrate can be loaded; a shower head injecting a processing gas toward the substrate; and a guide unit detachably installed inside the chamber to guide the processing gas such that the processing gas injected from the shower head is discharged through a chamber hole formed in the chamber. | 02-03-2011 |
| 20110023782 | GAS INJECTION UNIT FOR CHEMICAL VAPOR DESPOSITION APPARATUS - A gas injection unit allows uniform cooling thereof via smooth flow of coolant and can be easily manufactured. The gas injection unit for a chemical vapor deposition apparatus includes, inter alia: a gas distribution housing; a cooling housing positioned between the gas distribution housing and a processing chamber where a deposition process is performed, and formed with a coolant inlet through which coolant is introduced, and a coolant outlet through which the coolant is discharged; a processing gas pipe of which one end is opened to the gas distribution housing and the other end is opened to the processing chamber, the processing gas pipe penetrating the cooling housing; and a first wall part positioned inside the cooling housing such that an inside of the cooling housing is partitioned into a central path and a peripheral path, and formed with a penetration hole such that the central path communicates with the peripheral path. | 02-03-2011 |
