LIGADP CO., LTD.
|LIGADP CO., LTD. Patent applications|
|Patent application number||Title||Published|
|20130109161||METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD||05-02-2013|
|20120221167||TEMPERATURE CONTROL METHOD OF CHEMICAL VAPOR DEPOSITION DEVICE - There is a need for a method capable of distinguishing even a temperature difference between a susceptor surface and a wafer surface, and controlling the temperature by reflecting the temperature difference. To accomplish such a purpose, the invention provides a temperature control method of a chemical vapor deposition device that comprises: a chamber; a susceptor which is positioned on the inner side of the chamber to allow rotation therein, wherein a wafer is stacked on an upper side; a gas supplier which is disposed on the inner side of the chamber, and sprays gas toward the wafer; a heater which is disposed on the inner side of the susceptor, and heats the wafer; and a temperature sensor which is positioned in the chamber, and measures the temperature. The temperature control method comprises the steps of: (a) calculating the temperature distribution of the susceptor on the basis of a measured value of the temperature sensor, and dividing a section with relatively high temperature as a susceptor section and a section with relatively low temperature as a wafer section from the temperature distribution; and (b) controlling the heater by comparing a preset reference temperature with the temperature of a selected position of the susceptor section or the wafer section.||08-30-2012|
|20120221138||METAL ORGANIC CHEMICAL VAPOR DEPOSITION DEVICE AND TEMPERATURE CONTROL METHOD THEREFOR - The present invention provides a metal organic chemical vapor deposition device and a temperature control method therefor. The device comprises: a chamber; a susceptor which is installed inside the chamber to allow rotation therein, wherein at least one substrate is settled thereon; a plurality of heaters which heat the susceptor, wherein the temperature is independently controlled; a gas sprayer which is positioned in the upper part of the susceptor, and sprays gases of group III and V toward the susceptor; a plurality of temperature detection sensors which are positioned in the upper part of the susceptor, and measure the temperature of heating regions heated by each heater; and a controller which retains temperature setting values necessary for the heating regions, and controls the temperature of the heating regions by comparing sensing temperature values detected by each temperature detection sensor with the setting values necessary for the heating regions. According to the present invention, the metal organic chemical vapor deposition device and the temperature control method therefor can uniformly apply necessary temperature ramping to the entire substrates during process by effectively adjusting the temperature conditions essential for every epitaxial process in the metal organic chemical vapor deposition device, which carries out the process by changing the temperature up to 1200° C. from room temperature. Therefore, the invention improves process efficiency and deposition uniformity.||08-30-2012|
|20120216747||CHEMICAL VAPOR DEPOSITION DEVICE AND TEMPERATURE CONTROL METHOD OF CHEMICAL VAPOR DEPOSITION DEVICE - A method capable of perceiving a temperature difference between a susceptor surface and a wafer surface even without special complicated or high-priced equipment is needed. To accomplish such a purpose, the present invention provides a chemical vapor deposition device that comprises: a chamber; a susceptor which is positioned on the inner side of the chamber to allow rotation therein, wherein a wafer is stacked on an upper side; a gas supplier which is disposed on the inner side of the chamber, and sprays gas toward the wafer; a heater which is disposed on the inner side of the susceptor, and heats the wafer; a temperature sensor which is positioned in the chamber, and measures the temperature of the susceptor; a rotation recognition mark which is equipped at the position in which the mark is integrally rotated with the susceptor; a rotation recognition sensor which is positioned in the chamber in order to determine the rotated state of the susceptor, and detects the rotation recognition mark; and a controller which calculates the temperature distribution of the upper side of the susceptor by using the rotation recognition sensor and the temperature sensor, and controls the heater on the basis of the temperature distribution.||08-30-2012|
|20110143016||TEMPERATURE CONTROL METHOD FOR CHEMICAL VAPOR DEPOSITION APPARATUS - Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.||06-16-2011|
|20110086496||METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD - A metal organic chemical vapor deposition apparatus includes reaction chambers in which nitride layers is deposited on a substrate using a group III-V material, a buffer chamber connected to the reaction chambers and in which a transfer robot is disposed to transfer the substrate into the reaction chambers, a gas supply device configured to selectively supply one or more of hydrogen, nitrogen, and ammonia gases into the buffer chamber so that when the buffer chamber communicates with one of the reaction chambers, the buffer chamber has the same atmosphere as an atmosphere of the reaction chamber, and a heater disposed in the buffer chamber. Nitride layers are deposited on a substrate in the reaction chambers, and the temperature and gas atmosphere of the buffer chamber are adjusted such that when the substrate is transferred, epitaxial layers formed on the substrate can be stably maintained.||04-14-2011|
|20110041769||APPARATUS FOR CHEMICAL VAPOR DEPOSITION AND APPARATUS FOR PROCESSING SUBSTRATE - Provided are a chemical vapor deposition (CVD) apparatus and a substrate processing apparatus. The CVD apparatus includes a chamber defining a processing chamber for forming a thin film on a substrate, a shower head that discharges processing gas into the processing chamber, a lid for opening and closing the chamber, a hinge part that pivotably couples the lid to the chamber at one side of the lid, a clamping part is provided to press the other side of the lid to secure the lid to the chamber, and a control part adapted to raise or lower the one side of the lid when the clamping part is pressing the other side of the lid.||02-24-2011|
|20110027480||CHEMICAL VAPOR DEPOSITION APPARATUS CAPABLE OF CONTROLLING DISCHARGING FLUID FLOW PATH IN REACTION CHAMBER - A chemical vapor deposition apparatus is equipped to control the width of a gas discharge path between a susceptor and an inner surface of a chamber without having to resort to redesign and remanufacturing of the apparatus. The chemical vapor deposition apparatus includes: a chamber; a susceptor positioned inside the chamber and on which a substrate can be loaded; a shower head injecting a processing gas toward the substrate; and a guide unit detachably installed inside the chamber to guide the processing gas such that the processing gas injected from the shower head is discharged through a chamber hole formed in the chamber.||02-03-2011|
|20110023782||GAS INJECTION UNIT FOR CHEMICAL VAPOR DESPOSITION APPARATUS - A gas injection unit allows uniform cooling thereof via smooth flow of coolant and can be easily manufactured. The gas injection unit for a chemical vapor deposition apparatus includes, inter alia: a gas distribution housing; a cooling housing positioned between the gas distribution housing and a processing chamber where a deposition process is performed, and formed with a coolant inlet through which coolant is introduced, and a coolant outlet through which the coolant is discharged; a processing gas pipe of which one end is opened to the gas distribution housing and the other end is opened to the processing chamber, the processing gas pipe penetrating the cooling housing; and a first wall part positioned inside the cooling housing such that an inside of the cooling housing is partitioned into a central path and a peripheral path, and formed with a penetration hole such that the central path communicates with the peripheral path.||02-03-2011|
Patent applications by LIGADP CO., LTD.