| LATTRON CO., LTD Patent applications |
| Patent application number | Title | Published |
|---|
| 20120027046 | Ultra Thin Temperature Sensor Device - An ultra thin temperature sensor device includes a temperature sensor element, lead frames for allowing the temperature sensor element to be interposed and fastened between the lead frames, a supporter for protecting the temperature sensor element, and a film for enclosing and insulating the temperature sensor element, the lead frames, and the supporter. The supporter is formed to be larger than the temperature sensor element. | 02-02-2012 |
| 20110277570 | Sensor Device Protected by a Film Layer and a Resin Layer - A sensor element assembly, including: a sensor element; lead frames provided with the sensor element therebetween, the lead frames fixing the sensor element; a first head protection film protecting the sensor element fixed between the lead frames; an insulating film covering the first head protection film and the lead frames to insulate the lead frames; and a second head protection film (resin layer) further covering the head covered with the insulating film. The sensor element assembly is advantageous in that an epoxy resin layer is formed on a film layer covering a sensor element, so that the strength of the sensor element assembly can be maintained by the epoxy resin layer itself, thereby improving the impact resistance and compressive strength thereof. | 11-17-2011 |
| 20110032649 | ESD PROTECTIVE DEVICE HAVING LOW CAPACITANCE AND STABILITY AND A PREPARING PROCESS THEREOF - An ESD protective device having a low capacitance and stability characteristics constructed by installing a voltage sensitive material between electrodes. The voltage sensitive material comprises a fluorescent substance. The voltage sensitive material may be barium aluminate. The voltage sensitive material may be zinc silicate. The voltage sensitive material may be zinc sulfide. The voltage sensitive material is doped with a metal atom such as Mn, Cu and Eu. The device does not distort a signal wave pattern and have low capacitance of 0.5 pF or lower. | 02-10-2011 |
