KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION Patent applications |
Patent application number | Title | Published |
20160099385 | Method for Manufacturing Vertical Type Light Emitting Diode, Vertical Type Light Emitting Diode, Method for Manufacturing Ultraviolet Ray Light Emitting Diode, and Ultraviolet Ray Light Emitting Diode - A vertical type light emitting diode includes a nitride semiconductor having a p-n conjunction structure with a transparent material layer formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure of mesh, punched plate, or one-dimensional grid form, etc. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode. A stereoscopic pattern is formed in the transparent material layer and the p-electrode deposited, and thereby forming the pattern in the p-electrode. Depositing the p-electrode on only 10 to 70% of the upper portion of the p type clad layer in an ultraviolet ray light emitting diode such that an area where the p type clad layer is exposed is wide increases the transmittance of ultraviolet rays through an area where the p-electrode is not deposited. | 04-07-2016 |
20120205665 | HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR DEVICE ON POROUS NITRIDE SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF - Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer. | 08-16-2012 |
20110270557 | MEASURING METHOD OF CRITICAL CURRENT DENSITY OF SUPERCONDUCTOR WIRES USING MEASUREMENT OF MAGNETIZATION LOSS - A method for measuring critical current density of superconductor wires according to the present invention is characterized in that it includes: (a) applying an external magnetic field to the superconductor wires, (b) measuring a magnetization loss of the superconductor wires according to the application of the external magnetic field, (c) normalizing the measured magnetization loss, and then calculating a fully-penetration magnetic field of the superconductor wires according to the normalized magnetization loss, (d) calculating a critical current density of the superconductor wires according to the calculated fully-penetration magnetic field. Therefore, the critical current density of parallel superconductor wires such as stacked superconductor wires may be measured without applying current to the superconductor wires directly. | 11-03-2011 |
20110239443 | MULTIPLE TRANSPOSITION METHOD FOR SUPERCONDUCTING WIRE - Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the first-transposed superconducting wire units by rotating the plurality of superconducting wire units on the central axis of the superconducting wire unit bundle along the length to be twisted and combined with each other. | 10-06-2011 |
20110225340 | EMULATOR INTERFACE DEVICE AND METHOD THEREOF - An interface device for an emulator is disclosed. The interface device includes a connection unit, a transmission unit, and an interface unit. The connection unit receives data, to be used to emulate a logic, from a host computer, and transmits result data, output from the logic, to the host computer. The transmission unit receives the data from the connection unit and stores (writes) the data in the first area of a register array. If the result data is stored in the second area of the register array, the transmission unit reads the result data and transmits the result data to the connection unit. The interface unit includes at least one register array, outputs a clock, set using the data stored in the first area, to the logic, and stores the result data, output from the logic, in the second area. | 09-15-2011 |
20100213823 | INORGANIC ELECTROLUMINESCENT DEVICE - An inorganic electroluminescent device includes; a lower electrode, a dielectric layer which is disposed on the lower electrode and includes a low dielectric material layer and a high dielectric material layer, an inorganic light emitting layer disposed on the dielectric layer, and an upper electrode disposed on the inorganic light emitting layer, wherein the low dielectric material layer has a greater dielectric constant than the high dielectric material layer. | 08-26-2010 |
20090310564 | FAST HANDOVER SYSTEM AND METHOD THEREOF - Disclosed are a fast handover system and a method thereof. The fast handover method can include: allowing a mobile node (MN) to transmit a handover information message to a previous mobile access gateway (PMAG); allowing the PMAG to transmit a fast proxy binding update (FPBU) message to a local mobility anchor (LMA) on the basis of the handover information message received from the MN; allowing the LMA to transmit a handover initiation (HI) message including MN-ID and proxy-care-of address (CoA) of the PMAG to a new MAG (NMAG); transmitting a position update message to the NMAG if the MN is attached to a target BS that is connected to the NMAG; and allowing the NMAG to deliver a buffered packet to the MN. | 12-17-2009 |
20090296812 | FAST ENCODING METHOD AND SYSTEM USING ADAPTIVE INTRA PREDICTION - Fast encoding method and system are provided which can transmit video data in real time using adaptive intra prediction in accordance with the H.264/AVC (Advanced Video Codec) standard so as to efficiently provide security-related images or multimedia images in various network environments with high quality. An intra prediction method of compressing and encoding an image includes the steps of: comparing an SAD value C calculated from macro block data of a present frame and a previous frame with a reference value K to determine a prediction method; and selectively performing on input macro block data a first method of determining a best mode and a block size by prediction in a plurality of prediction modes based on spatial directivity and generating prediction data and a second method of generating prediction data using the best mode and the block size used in the previous frame, depending on the determined prediction method. | 12-03-2009 |