KONINKLIJKE PHILIPS ELECTRONICS N.V. ET AL.
|KONINKLIJKE PHILIPS ELECTRONICS N.V. ET AL. Patent applications|
|Patent application number||Title||Published|
|20100041170||Package-Integrated Thin Film LED - LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.||02-18-2010|
|20090155943||Luminescent Ceramic Element For A Light Emitting Device - A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 μm.||06-18-2009|
|20090072263||Color Control By Alteration of Wavelength Converting Element - A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.||03-19-2009|
|20080266900||Backlight Using LED Parallel to Light Guide Surface - Various embodiments of corner-coupled backlights are described, where one or more white light LEDs are optically coupled to a truncated corner edge of a solid rectangular light guide backlight. The one or more LEDs are mounted in a small reflective cavity, whose output opening is coupled to the truncated corner of the light guide. The reflective cavity provides a more uniform light distribution at a wide variety of angles to the face of the truncated corner to better distribute light throughout the entire light guide volume. To enable a thinner light guide, the LED die is positioned in the reflective cavity so that the major light emitting surface of the LED is parallel to the top surface of the light guide. The reflective cavity reflects the upward LED light toward the edge of the light guide.||10-30-2008|
|20080265263||Polarized Semiconductor Light Emitting Device - A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.||10-30-2008|
Patent applications by KONINKLIJKE PHILIPS ELECTRONICS N.V. ET AL.