KOMATSU ELECTRONIC METALS CO., LTD.
|KOMATSU ELECTRONIC METALS CO., LTD. Patent applications|
|Patent application number||Title||Published|
|20090198452||METHOD FOR DETERMINING CONCENTRATION OF IMPURITY ELEMENT - A method for shortening a waiting time from the setting of a sample in a chamber to the stabilisation of the intensity for a secondary ion for SIMS analysis (mass analysis of the secondary ion) using a raster variation method is provided. By approximating so that the difference between time-lapse variations in intensities of the secondary ions sequentially measured for irradiation densities of two different primary ions becomes constant, a method capable of carrying out an accurate measurement of the concentration of an impurity in consideration of background noise despite time-lapse variations in the intensities of the secondary ions is provided.||08-06-2009|
|20090040512||Semiconductor wafer inspection device and method - The surface of an epitaxial wafer is inspected using an optical scattering method. The intensities of light scattered with a narrow scattering angle and light scattered with, a wide scattering angle reflected from laser light scatterers (LLS) on the wafer surface are detected. If the intensifies of narrowly and widely scattered lights are within a prescribed sizing range, it is judged whether the laser light scatterer is a particle or killer defect by deciding into which zone (||02-12-2009|
Patent applications by KOMATSU ELECTRONIC METALS CO., LTD.