| KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA Patent applications |
| Patent application number | Title | Published |
|---|
| 20090210166 | Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal - By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation. | 08-20-2009 |
| 20090170292 | Method for producing semiconductor substrate and semiconductor substrate - A production method for a semiconductor substrate for producing a high quality SGOI substrate | 07-02-2009 |
| 20090156101 | POLISHING APPARATUS, POLISHING HEAD AND POLISHING METHOD - A polishing apparatus comprises a polishing plate ( | 06-18-2009 |
| 20080311021 | Apparatus for pulling single crystal by CZ method - In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method. | 12-18-2008 |
| 20080311019 | Apparatus for pulling single crystal by CZ method - In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method. | 12-18-2008 |
