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Koha Co., Ltd.
| Koha Co., Ltd. Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20120070929 | METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE - Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S | 03-22-2012 |
| 20120003770 | METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S | 01-05-2012 |
| 20110315998 | EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER - A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base | 12-29-2011 |
| 20110253973 | Semiconductor layer - A light-emitting element includes a β-Ga | 10-20-2011 |
| 20100038652 | LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME - A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al | 02-18-2010 |
| 20080237607 | LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME - A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al | 10-02-2008 |