| Kochi Industrial Promotion Center Patent applications |
| Patent application number | Title | Published |
|---|
| 20100219744 | FIELD EMISSION ELECTRODE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic. | 09-02-2010 |
| 20090286351 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE INCLUDING ACTIVE LAYER OF ZINC OXIDE WITH CONTROLLED CRYSTAL LATTICE SPACING - A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d | 11-19-2009 |
| 20090269881 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR INCLUDING LOW RESISTANCE CONDUCTIVE THIN FILMS - A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer. | 10-29-2009 |
| 20090169769 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a cooling part for cooling the processing object, wherein between the processing object and the cooling part, as compared with a thermal resistance between a central part of the processing object and the cooling part, a thermal resistance between a peripheral part peripheral to the central part and the cooling part is small. | 07-02-2009 |
| 20090155934 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a heat flow control heat transfer part for drawing heat from the processing object to generate a heat flow from a central area to a peripheral area of the processing object. | 06-18-2009 |
| 20080226838 | Plasma CVD apparatus and film deposition method - A plasma CVD apparatus includes a first electrode which is disposed in a reacting furnace and on which a substrate is mounted, a second electrode that is disposed above and opposite the first electrode and generates plasma with the first electrode, and a first gas supply nozzle that is disposed at a height between a height of the first electrode in the reacting furnace and a height of the second electrode, and has a plurality of ejection ports formed and arranged in such a way as to surround an area between the first electrode and the second electrode where plasma is generated. | 09-18-2008 |
