| KOBELCO RESEARCH INSTITUTE, INC. Patent applications |
| Patent application number | Title | Published |
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| 20120045360 | CU-GA ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF - Disclosed is a Cu—Ga alloy sputtering target which enables the formation of a Cu—Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. Specifically disclosed is a Cu—Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 μm or less, and has a porosity of 0.1% or less. | 02-23-2012 |
| 20120002213 | SHAPE DETERMINING DEVICE - An object of the present invention is to measure thickness distribution with precision by using a simple device configuration without being affected by vibrations of a to-be-measured object. In the present invention, for each of the front and the back surfaces of a to-be-measured object | 01-05-2012 |
| 20110248071 | AUSTENITIC WELDING MATERIAL, AND PREVENTIVE MAINTENANCE METHOD FOR STRESS CORROSION CRACKING AND PREVENTIVE MAINTENANCE METHOD FOR INTERGRANULAR CORROSION, USING SAME - Disclosed is an austenitic welding material which contains C: 0.01 wt % or less, Si: 0.5 wt % or less, Mn: 0.5 wt % or less, P: 0.005 wt % or less, S: 0.005 wt % or less, Ni: 15 to 40 wt %, Cr: 20 to 30 wt %, N: 0.01 wt % or less, 0: 0.01 wt % or less, and the balance of Fe and inevitable impurities, wherein the content of B contained as one of the inevitable impurities in the welding material is 3 wt ppm or less, and the total content of C, P, S, N and O in the welding material is 0.02 wt % or less. | 10-13-2011 |
| 20110214900 | ELECTRIC CONTACT MEMBER - Provided is an electric contact member which reduces, to the utmost, peel-off of a carbon film that is caused at the time of use of the electric contact member having at least an edge to keep stable electric contact over a long period of time. Disclosed is an electric contact member which repeatedly contacts with a device under test at a tip part of the electric contact member in which the tip part has an edge, the electric contact member comprising: a base material; an underlying layer comprising Au, Au alloy, Pd or Pd alloy, which is formed on a surface of the base material of the tip part; an intermediate layer which is formed on a surface of the underlying layer; and a carbon film comprising at least one of a metal and a carbide thereof which is formed on a surface of the intermediate layer, wherein the intermediate layer has a lamination structure comprising: an inner layer comprising Ni or Ni alloy; and an outer layer comprising at least one of Cr, Cr alloy, W and W alloy. | 09-08-2011 |
| 20110048936 | AL-Ni-RARE EARTH ELEMENT ALLOY SPUTTERING TARGET - An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×10 | 03-03-2011 |
| 20110034093 | CONTACT PROBE PIN - The present invention provides a contact probe pin having both electrical conductivity and durability and being capable of realizing low adhesion to the device under test (particularly, tin contained therein) and thereby stably maintaining electrical contact over a long period of time. The present invention relates to a contact probe pin comprising: a base material; and a carbon film comprising at least one of a metal and a carbide thereof, wherein the carbon film is continuously formed over the surface of from a tip part of the contact probe pin to a lateral part of the contact probe pin, and a content of the at least one of a metal and a carbide thereof in the carbon film is continuously or intermittently decreased from the tip part toward the lateral part. | 02-10-2011 |
| 20100264018 | AG BASE SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - An Ag sputtering target | 10-21-2010 |
| 20100243439 | SPUTTERING TARGET AND METHOD FOR PREPARATION THEREOF - A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion. | 09-30-2010 |
| 20100143636 | OPTICAL INFORMATION RECORDING MEDIUM - There is provided a read-only optical information recording medium including a reflective film which has high reflectivity, and is superior in environment resistance at the time of being kept in a high-temperature, high humidity environment as well as light resistance at the time of being kept in a high-intensity light irradiation environment and repeating reproduction durability against a repeating reproduction test. In a read-only optical information recording medium in which at least one reflective film and at least one light transmissive layer are laminated in order on a substrate, the reflective film is made of a Ag-base alloy including 0.01 to 1.0 at % of Bi and 0.1 to 13.0 at % of Cu. | 06-10-2010 |
| 20100116382 | AUSTENITIC STAINLESS STEEL EXCELLENT IN INTERGRANULAR CORROSION RESISTANCE AND STRESS CORROSION CRACKING RESISTANCE, AND METHOD FOR PRODUCING AUSTENITIC STAINLESS STEEL MATERIAL - An austenitic stainless steel excellent in intergranular corrosion resistance and stress corrosion cracking resistance, comprising: C: 0.005 wt % or less; Si: 0.5 wt % or less; Mn: 0.5 wt % or less; P: 0.005 wt % or less; S: 0.005 wt % or less; Ni: 15.0 to 40.0 wt %, Cr: 20.0 to 30.0 wt %, N: 0.01 wt % or less; O: 0.01 wt % or less; and the balance of Fe and inevitable impurities, wherein the content of B included in the inevitable impurities is 3 wt ppm or less. | 05-13-2010 |
| 20100065425 | SILVER ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - A silver alloy sputtering target is provided which is useful in forming a thin silver-alloy film of a uniform thickness by the sputtering method. When crystal orientation strengths are determined at four arbitrary positions by the X-ray diffraction method, the orientation which exhibits the highest crystal orientation strength (X | 03-18-2010 |
| 20100038233 | AG-BI-BASE ALLOY SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME - The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at % | 02-18-2010 |
| 20090242395 | Al-Ni-La-Cu alloy sputtering target and manufacturing method thereof - The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from 1/4 t (t: thickness) to 3/4 t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000. | 10-01-2009 |
| 20090242394 | AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF - The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more. | 10-01-2009 |
| 20090211902 | SPUTTERING TARGET - The present invention provides a sputtering target in which an occurrence of target cracks can be inhibited. The sputtering target of the invention relates to a sputtering target produced by mixing and sintering a main powder containing In as a main component, which is obtained by pulverizing an ingot consisting of an intermetallic compound, and a sub-powder containing a different component composition from the above-mentioned main powder, wherein a total content of Si, Al and Fe which are unavoidable impurities is 300 ppm by mass or less. Further, the intermetallic compound contains In and at least one selected from Co and Ni. | 08-27-2009 |
| 20090139860 | AG-BASED SPUTTERING TARGET - Disclosed is an Ag-based sputtering target composed of pure Ag or Ag alloy wherein when the average grain size d | 06-04-2009 |
| 20090057141 | AG-BASED ALLOY SPUTTERING TARGET - The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 μm or more and a maximum height (Rz) of 20 μm or more at a sputtering surface thereof. | 03-05-2009 |
| 20090057140 | AG BASE ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME - A sputtering target made of an Ag base alloy containing 0.6 to 10.5 atomic % Ta and 2 to 13 atomic % Cu, is characterized in that: when the sputtering surface of the sputtering target is image-analyzed, | 03-05-2009 |
| 20090026072 | AL-NI-LA-SI SYSTEM AL-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si. | 01-29-2009 |
| 20080223718 | AI-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - The present invention relates to an Al-based alloy sputtering target, comprising Ni in an amount of 0.05 to 10 atomic percent, wherein the Al-based alloy sputtering target satisfies: (1) that a ratio of a P value to a total area of a sputtering surface is 70% or more, wherein the P value indicates a total of area fractions of <001>±15°, <011>±15°, <111>±15° and <311>±15°; (2) that a ratio of the area fraction of <011>±15° to the P value is 30% or more; and (3) that a ratio of the area fraction of <111>±15° to the P value is 10% or less, when crystallographic orientations <001>, <011>, <111> and <311> in a normal line direction to a sputtering surface of the Al-based alloy sputtering target are observed in accordance with the electron backscatter diffraction pattern method. | 09-18-2008 |
