KLA-TENCOR TECHNOLOGIES CORPORATION Patent applications |
Patent application number | Title | Published |
20130314710 | Methods and Systems for Determining a Critical Dimension and Overlay of a Specimen - Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques. | 11-28-2013 |
20130310966 | METHOD AND DEVICE FOR USING SUBSTRATE GEOMETRY TO DETERMINE OPTIMUM SUBSTRATE ANALYSIS SAMPLING - A method and apparatus for process control in the processing of a substrate is disclosed in the present invention. Embodiments of the present invention utilize a first analysis tool to determine changes in a substrate's geometry. The substrate geometry data is used to generate sampling plan that will be used to check areas of the substrate that are likely to have errors after processing. The sampling plan is fed forwards to a second analysis tool that samples the substrate after it has been processed. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 11-21-2013 |
20130163852 | ROTATIONAL MULTI-LAYER OVERLAY MARKS, APPARATUS, AND METHODS - In one embodiment, a semiconductor target for determining overlay error, if any, between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of first structures that are invariant for a plurality of first rotation angles with respect to a first center of symmetry (COS) of the first structures and a plurality of second structures that are invariant for a plurality of second rotation angles with respect to a second COS of the second structures. The first rotation angles differ from the second rotation angles, and first structures and second structures are formed on different layers of the substrate or separately generated patterns on a same layer of the substrate. | 06-27-2013 |
20130039460 | METHODS AND SYSTEMS FOR DETERMINING A CRITICAL DIMENSION AND OVERLAY OF A SPECIMEN - Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques. | 02-14-2013 |
20130035877 | Methods and Systems for Determining a Characteristic of a Wafer - Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output. | 02-07-2013 |
20120153281 | APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY - A semiconductor target for determining a relative shift between two or more successive layers of a substrate is provided. The target comprises a plurality of first structures formed in a first layer, and the first structures have a first center of symmetry (COS). The target further comprises a plurality of second structures formed in a second layer, and the second structures have second COS. The difference between the first COS and the second COS corresponds to an overlay error between the first and second layer and wherein the first and second structures have a 180° rotational symmetry, without having a 90° rotational symmetry, with respect to the first and second COS, respectively. | 06-21-2012 |
20110313558 | METHODS AND SYSTEMS FOR MONITORING A PARAMETER OF A MEASUREMENT DEVICE DURING POLISHING, DAMAGE TO A SPECIMEN DURING POLISHING, OR A CHARACTERISTIC OF A POLISHING PAD OR TOOL - Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals. | 12-22-2011 |
20110286656 | METHODS AND SYSTEMS FOR UTILIZING DESIGN DATA IN COMBINATION WITH INSPECTION DATA - Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least to similar. The method further includes storing results of the binning step in a storage medium. | 11-24-2011 |
20110181891 | Systems Configured to Generate Output Corresponding to Defects on a Specimen - Systems configured to generate output corresponding to defects on a specimen and systems configured to generate phase information about defects on a specimen are provided. One system includes an optical subsystem that is configured to create interference between a test beam and a reference beam. The test beam and the reference beam are reflected from the specimen. The system also includes a detector that is configured to generate output representative of the interference between the test and reference beams. The interference increases contrast between the output corresponding to the defects and output corresponding to non-defective portions of the specimen. | 07-28-2011 |
20110181868 | INSPECTION SYSTEMS AND METHODS FOR DETECTING DEFECTS ON EXTREME ULTRAVIOLET MASK BLANKS - Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about −1 to −3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio. | 07-28-2011 |
20110142382 | Shielding, Particulate Reducing High Vacuum Components - A method of forming a gate valve for use in a high vacuum environment of an electron gun by machining a core of non-magnetic nickel-chromium-molybdenum-iron-tungsten-silicon-carbon alloy that is weldable with nickel alloys and has a tensile strength of about 750 megapascals, machining a cladding of nickel-iron, welding the core to the cladding to form the gate valve, and machining the gate valve so as to remove any dimensional differences at an interface between the core and the cladding. In this manner, because the final mechanical tolerance is controlled by machining instead of part assembling, extremely high alignment accuracy is obtained. The final part provides field shielding as provided by the nickel alloy shell, low stray field provided by the non-magnetic alloy, good vacuum performance, and tight mechanical tolerance control. Also, because the alloy has the advantage of a low oxidation rate in comparison to stainless steel and titanium, there is less contamination buildup due to conditions such as electron beam bombardment. | 06-16-2011 |
20110142327 | METHODS FOR ACCURATE IDENTIFICATION OF AN EDGE OF A CARE AREA FOR AN ARRAY AREA FORMED ON A WAFER AND METHODS FOR BINNING DEFECTS DETECTED IN AN ARRAY AREA FORMED ON A WAFER - Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area. | 06-16-2011 |
20100328670 | SYSTEM AND METHOD FOR PERFORMING PHOTOTHERMAL MEASUREMENTS AND RELAXATION COMPENSATION - A device and methods for performing a photothermal measurement and relaxation compensation of a sample are disclosed. The device may include a probe beam source, a pump beam source, a sample, and a detector array. A method may include adjusting an intensity modulated pump beam power, adjusting a probe beam power to increase a response measurement location temperature and increase a modulated optical reflectance signal, directing the intensity modulated pump beam and the probe beam along a measurement path to a response measurement location on a sample for periodically exciting a region on the sample, detecting a reflected portion of the probe beam, and calculating an implantation dose. | 12-30-2010 |
20100318212 | Method for Measuring Thermo-Optically Induced Material Phase-Change Response in a Multiple Layer Thin Film Structure Using Visible and Ultraviolet Spectroscopy - A method and device for facilitating measurement of thermo-optically induced material phase change response in a thin planar or a grating film stack is disclosed. The method may include using small-spot visible and ultraviolet spectra (ellipsometric or reflectance) for measuring a material phase change response. The device may include a measurement system platform, at least one electrical resistor, at least one external electric probe, and ohmic contact circuitry. | 12-16-2010 |
20100271621 | METHODS AND SYSTEMS FOR DETERMINING A CRITICAL DIMENSION AND OVERLAY OF A SPECIMEN - Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques. | 10-28-2010 |
20100238433 | METHODS AND SYSTEMS FOR INSPECTION OF A SPECIMEN USING DIFFERENT INSPECTION PARAMETERS - Methods and systems for inspection of a specimen using different parameters are provided. One computer-implemented method includes determining optimal parameters for inspection based on selected defects. This method also includes setting parameters of an inspection system at the optimal parameters prior to inspection. Another method for inspecting a specimen includes illuminating the specimen with light having a wavelength below about 350 nm and with light having a wavelength above about 350 nm. The method also includes processing signals representative of light collected from the specimen to detect defects or process variations on the specimen. One system configured to inspect a specimen includes a first optical subsystem coupled to a broadband light source and a second optical subsystem coupled to a laser. The system also includes a third optical subsystem configured to couple light from the first and second optical subsystems to an objective, which focuses the light onto the specimen. | 09-23-2010 |
20100226562 | COMPUTER-IMPLEMENTED METHODS FOR DETECTING AND/OR SORTING DEFECTS IN A DESIGN PATTERN OF A RETICLE - Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the reticle generated for different values of a lithographic variable. The images include at least one reference image and at least one modulated image. A composite reference image can be generated from two or more reference images. The method also includes assigning one or more identifiers to the defects of interest. The identifier(s) may include, for example, a defect classification and/or an indicator identifying if the defects of interest are to be used for further processing. | 09-09-2010 |
20100165340 | SPECTROSCOPIC SCATTEROMETER SYSTEM - Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure. | 07-01-2010 |
20100119144 | METHODS AND SYSTEMS FOR UTILIZING DESIGN DATA IN COMBINATION WITH INSPECTION DATA - Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium. | 05-13-2010 |
20100091284 | APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY - Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1 | 04-15-2010 |
20100073688 | PERIODIC PATTERNS AND TECHNIQUE TO CONTROL MISALIGNMENT BETWEEN TWO LAYERS - A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal. | 03-25-2010 |
20100005442 | Apparatus and Methods for Determining Overlay and Uses of Same - Disclosed are techniques and apparatus are provided for determining overlay error or pattern placement error (PPE) across the field of a scanner which is used to pattern a sample, such as a semiconductor wafer or device. This determination is performed in-line on the product wafer or device. That is, the targets on which overlay or PPE measurements are performed are provided on the product wafer or device itself. The targets are either distributed across the field by placing the targets within the active area or by distributing the targets along the streets (the strips or scribe areas) which are between the dies of a field. The resulting overlay or PPE that is obtained from targets distributed across the field may then be used in a number of ways to improve the fabrication process for producing the sample. For instance, the resulting overlay or PPE may be used to more accurately predict device performance and yield, more accurately correct a deviating photolithography scanning tool, or determine wafer lot disposition. | 01-07-2010 |
20090297019 | METHODS AND SYSTEMS FOR UTILIZING DESIGN DATA IN COMBINATION WITH INSPECTION DATA - Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium. | 12-03-2009 |
20090290784 | METHODS AND SYSTEMS FOR BINNING DEFECTS DETECTED ON A SPECIMEN - Methods and systems for binning defects detected on a specimen are provided. One method includes comparing a test image to reference images. The test image includes an image of one or more patterned features formed on the specimen proximate to a defect detected on the specimen. The reference images include images of one or more patterned features associated with different regions of interest within a device being formed on the specimen. If the one or more patterned features of the test image match the one or more patterned features of one of the reference images, the method includes assigning the defect to a bin corresponding to the region of interest associated with the reference image. | 11-26-2009 |
20090284744 | APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY - Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb. Offset Xc is an opposite sign and differs from Xd. The offsets Xa, Xb, Xc and Xd are selected so that an overlay error, including the respective offset, is within a linear region of overlay values. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra S | 11-19-2009 |
20090190141 | SYSTEM FOR MEASURING A SAMPLE WITH A LAYER CONTAINING A PERIODIC DIFFRACTING STRUCTURE - To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure. | 07-30-2009 |
20090161096 | Simultaneous Multi-Spot Inspection And Imaging - A compact and versatile multi-spot inspection imaging system employs an objective for focusing an array of radiation beams to a surface and a second reflective or refractive objective having a large numerical aperture for collecting scattered radiation from the array of illuminated spots. The scattered radiation from each illuminated spot is focused to a corresponding optical fiber channel so that information about a scattering may be conveyed to a corresponding detector in a remote detector array for processing. For patterned surface inspection, a cross-shaped filter is rotated along with the surface to reduce the effects of diffraction by Manhattan geometry. A spatial filter in the shape of an annular aperture may also be employed to reduce scattering from patterns such as arrays on the surface. In another embodiment, different portions of the same objective may be used for focusing the illumination beams onto the surface and for collecting the scattered radiation from the illuminated spots simultaneously. In another embodiment, a one-dimensional array of illumination beams are directed at an oblique angle to the surface to illuminate a line of illuminated spots at an angle to the plane of incidence. Radiation scattered from the spots are collected along directions perpendicular to the line of spots or in a double dark field configuration. | 06-25-2009 |
20090135416 | Parametric Profiling Using Optical Spectroscopic Systems - A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities R | 05-28-2009 |
20090096505 | SYSTEMS, CIRCUITS AND METHODS FOR REDUCING THERMAL DAMAGE AND EXTENDING THE DETECTION RANGE OF AN INSPECTION SYSTEM - Inspection systems, circuits, and methods are provided to enhance defect detection by reducing thermal damage to large particles by dynamically altering the incident laser beam power level supplied to the specimen during a surface inspection scan. In one embodiment, an inspection system includes an illumination subsystem for directing light to a specimen at a first power level, a detection subsystem for detecting light scattered from the specimen, and a power attenuator subsystem for dynamically altering the power level directed to the specimen based on the scattered light detected from the specimen. For example, the power attenuator subsystem may reduce the directed light to a second power level, which is lower than the first, if the detected scattered light exceeds a predetermined threshold level. In addition reducing thermal damage, the systems and methods described herein may be used to extend the measurement detection range of an inspection system by providing a variable-power inspection system. | 04-16-2009 |
20090079974 | METHODS AND SYSTEMS FOR LITHOGRAPHY PROCESS CONTROL - Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist. | 03-26-2009 |
20090067797 | OPTICAL WAVEGUIDE RADIATION CONTROL - An integrated optical planar waveguide chip comprising materials and structures such as substrates, adhesives, capping materials, and waveguide structures which are absorbing at the wavelength of the working radiation. | 03-12-2009 |
20090067114 | Non Contact Substrate Chuck - A chuck for releasably retaining a substrate, where the chuck has a body with a substrate receiving surface disposed in an X-Y coordinate plane and adapted to receive the substrate. The body has gas pressure delivery channels and gas vacuum drawing channels, where the gas pressure delivery channels and gas vacuum drawing channels are mutually exclusive within the body. The substrate receiving surface has gas pressure delivery portions in communication with the gas pressure delivery channels, for delivering a gas pressure against the substrate while the substrate is retained by the chuck, and thereby keeping the substrate from contacting the substrate receiving surface. The substrate receiving surface also has gas vacuum drawing portions in communication with the gas vacuum drawing channels, for drawing a gas vacuum against the substrate while the substrate is retained by the chuck, and thereby retaining the substrate proximate the substrate receiving surface. Retaining means retain the substrate in X-Y directions from sliding off of the substrate receiving surface. | 03-12-2009 |
20090059236 | Wafer Edge Inspection - In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target radiation onto an edge surface of a wafer, the radiation targeting assembly comprising a first expanded paraboloid or expanded ellipsoid reflector positioned adjacent the edge surface of the wafer, a reflected radiation collecting assembly that collects radiation reflected from the surface, a signal processing module to generate surface parameter data from the reflected radiation, and a defect detection module to analyze the surface parameter data to detect a defect on the surface. | 03-05-2009 |
20090040514 | Method and apparatus for scanning, stitching and damping measurements of a double sided metrology inspection tool - A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements. | 02-12-2009 |
20090040511 | SYSTEMS, CIRCUITS AND METHODS FOR EXTENDING THE DETECTION RANGE OF AN INSPECTION SYSTEM BY AVOIDING DETECTOR SATURATION - Inspection systems, circuits and methods are provided to enhance defect detection by addressing anode saturation as a limiting factor of the measurement detection range of a photomultiplier tube (PMT) detector. In accordance with one embodiment of the invention, a method for inspecting a specimen includes directing light to the specimen and detecting light scattered from the specimen. The step of detecting may include monitoring an anode current of the PMT detector, and detecting features, defects or light scattering properties of the specimen using the anode current until the anode current reaches a predetermined threshold. Thereafter, the method may use a dynode current of the PMT for detecting the features, defects or light scattering properties of the specimen. | 02-12-2009 |
20090033931 | Optical Measurement Apparatus and Method - An optical modulation spectroscopy system comprises a probe beam source and components for directing the probe beam at a sample. It also may comprise a modulated pump beam source and components for directing a modulated pump beam at the sample. A dispersive system may disperse the reflected probe beam into constituent wavelengths to provide dispersed beams. A detector array may detect multiple dispersed reflected probe beams and processes a signal corresponding to each. Thus, measurement may be multiplexed for very fast performance. | 02-05-2009 |
20090028683 | SUBSTRATE PROCESSING APPARATUS AND METHOD - Substrate processing methods and apparatus are disclosed. In some embodiments a substrate processing apparatus may comprise a support structure and a moveable stage including first and second stages. The moveable stage has one or more maglev units attached to the first stage and/or second stage proximate an edge of the first stage. The first stage retains one or more substrates and moves with respect to a first axis that is substantially fixed with respect to the second stage. The second stage translates along a second axis with respect to the support structure. In other embodiments, a primary motor may maintain a rotary stage at an angular speed and/or accelerate or decelerate the stage from a first angular speed to a second angular speed. A secondary motor may accelerate the stage from rest to the first angular speed and/or decelerate the stage from a non-zero angular speed. | 01-29-2009 |
20090010526 | TUNGSTEN PLUG DEPOSITION QUALITY EVALUATION METHOD BY EBACE TECHNOLOGY - A first embodiment of the invention relates to a method for evaluating the quality of structures on an integrated circuit wafer. Test structures formed on either on the integrated or on a test wafer are exposed to an electron beam and an electron-beam activated chemical etch. The electron-beam activated etching gas or vapor etches the test structures, which are analyzed after etching to determine a measure of quality of the test structures. The measure of quality may be used in a statistical process control to adjust the parameters used to form device structures on the integrated circuit wafer. The test structures are formed on an integrated circuit wafer having two or more die. Each die has one or more integrated circuit structures. The test structures are formed on scribe lines between two or more adjacent die. Each test structure may correspond in dimensions and/or composition to one or more of the integrated circuit structures. | 01-08-2009 |
20090009754 | SYSTEMS AND METHODS FOR INSPECTING A WAFER WITH INCREASED SENSITIVITY - One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals. | 01-08-2009 |
20080304078 | METHOD AND APPARATUS FOR OPTICALLY ANALYZING A SURFACE - In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a radial motor to move an optical head in a radial direction to detect defects at locations displaced from the edge of the wafer, and a rotational motor to rotate the optical head around the edge of the wafer to detect defects on the edge of the wafer. | 12-11-2008 |
20080247035 | Catadioptric imaging system employing immersion liquid for use in broad band microscopy - A reduced size catadioptric inspection system employing a catadioptric objective and immersion substance is disclosed. The objective may be employed with light energy having a wavelength in the range of approximately 190 nanometers through the infrared light range, and can provide numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The objective comprises a focusing lens group, a field lens, a Mangin mirror arrangement, and an immersion substance or liquid between the Mangin mirror arrangement and the specimen. A variable focal length optical system for use with the objective in the catadioptric inspection system is also disclosed. | 10-09-2008 |
20080229811 | STABILIZING A SUBSTRATE USING A VACUUM PRELOAD AIR BEARING CHUCK - Substrate processing method and apparatus are disclosed. The substrate processing apparatus includes a non-contact air bearing chuck with a vacuum preload. | 09-25-2008 |
20080225282 | Beam delivery system for laser dark-field illumination in a catadioptric optical system - A method and apparatus for inspecting a specimen are provided. The apparatus comprises a primary illumination source, a catadioptric objective exhibiting central obscuration that directs light energy received from the primary illumination source at a substantially normal angle toward the specimen, and an optical device, such as a prism or reflective surface, positioned within the central obscuration resulting from the catadioptric objective for receiving further illumination from a secondary illumination source and diverting the further illumination to the specimen. The method comprises illuminating a surface of the specimen at a variety of angles using a primary illumination source, illuminating the surface using a secondary illumination source, the illuminating by the secondary illumination source occurring at a substantially normal angle of incidence; and imaging all reflected, scattered, and diffracted light energy received from the surface onto a detector. | 09-18-2008 |
20080225267 | Optical Measurement Apparatus and Method - An optical measurement apparatus and method a method for performing modulation spectroscopy measurement of a sample comprising: delivering an incident probe beam to a sample at a known spot; modulating reflectance of the probe beam with a pump beam which periodically forms a pump beam spot on the sample coincident with the probe beam spot; and monitoring a reflected probe beam with a detector: wherein the incident probe and pump beams are collinear; and wherein the incident beams are directed to be collinear by reflecting a beam from a facet of an optical waveguide transmitting the other beam. | 09-18-2008 |
20080218741 | Optical Inspection Apparatus and Method - In one embodiment, a modulation spectroscopy method comprises the steps of directing a probe beam and a pump beam at a sample, modulating the pump beam, and the probe beam is reflected from the sample into a detector. The sample may include a strained semiconductor. The detector may produce as output an electrical signal which comprises a large d.c. signal proportional to reflectance R of the probe beam and a small a.c. modulated signal at the modulation frequency proportional to the modulation of the reflectance ΔR of the probe beam. Both the reflectance R of the probe beam and the modulation of the reflectance ΔR of the probe beam are measured at a multiplicity of probe beam photon energies arising from different wavelengths of the probe beam, to provide a photoreflectance spectrum comprising at least one photoreflectance lineshape. The photoreflectance spectrum is analysed to measure energy differences between interband electronic transitions of the strained semiconductor, and the strain of the strained semiconductor is determined according to said energy differences. | 09-11-2008 |
20080204678 | Temperature effects on overlay accuracy - A method for reducing overlay error in a photolithographic process, by providing a substrate having a permanent layer with a first pattern disposed therein, coating the substrate with photoresist, exposing the photoresist to a second pattern, while measuring temperatures at a plurality of different first positions across the substrate, developing the second pattern in the photoresist, measuring overlay errors between the first and second patterns at a plurality of different second positions across the substrate, correlating the overlay errors with temperatures by position on the substrate, determining any relationship indicated between the correlated overlay errors and temperatures, and adjusting at least one temperature controlling aspect of the photolithographic process in response to any relationship determined. | 08-28-2008 |
20080198385 | Integrated Visible Pilot Beam for Non-Visible Optical Waveguide Devices - In one embodiment, a radiation based analysis system comprises a first radiation source to generate first radiation having a wavelength outside the visible spectrum, a second radiation source to generate second radiation having a wavelength within the visible spectrum, and a waveguide coupler to couple a portion of the first radiation and a portion of the second radiation into a combined radiation beam such that the first radiation and the second radiation follow a path that is substantially coaxial. | 08-21-2008 |