| KLA- Tencor Corporation Patent applications |
| Patent application number | Title | Published |
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| 20120120481 | HIGH DAMAGE THRESHOLD FREQUENCY CONVERSION SYSTEM - The present invention includes a fundamental laser light source configured to generate fundamental wavelength laser light, a first nonlinear optical crystal configured to generate first alternate wavelength light; a second nonlinear optical crystal configured to generate second alternate wavelength light; a dual wavelength Brewster angle waveplate configured to rotate a polarization of the first alternate wavelength light relative to the second alternate wavelength light such that the first and second alternate wavelength light have the same polarization; a set of Brewster angle wavefront processing optics configured to condition the first and second alternate wavelengths of light; a harmonic separator configured to separate the first alternate wavelength light from the second alternate wavelength light; and a Brewster angle output window configured to transmit the first or second alternate wavelengths of light from the interior of a laser frequency conversion system to the exterior of the laser frequency conversion system. | 05-17-2012 |
| 20120120396 | ANGLE-RESOLVED ANTISYMMETRIC SCATTEROMETRY - A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS | 05-17-2012 |
| 20120116733 | Data Perturbation for Wafer Inspection or Metrology Setup - Various embodiments for determining parameters for wafer inspection and/or metrology are provided. | 05-10-2012 |
| 20120113995 | MEASURING CRYSTAL SITE LIFETIME IN A NON-LINEAR OPTICAL CRYSTAL - The present invention includes a fundamental laser light source configured to generate fundamental wavelength laser light, an optical crystal configured to receive fundamental laser light from the fundamental laser light source, the optical crystal configured to generate alternate wavelength light by frequency converting a portion of the received fundamental laser light to alternate wavelength light, an auxiliary light source configured to generate auxiliary wavelength light, the auxiliary wavelength light having a wavelength different from the fundamental wavelength laser light and the alternate wavelength light, the fundamental laser light source and the auxiliary light source oriented such that the fundamental laser light copropagates with the auxiliary light through a surface of the optical crystal, and a detector configured to detect at least one of fundamental wavelength laser light scattered by the optical crystal, alternate wavelength light scattered by the optical crystal, or auxiliary light scattered by the optical crystal. | 05-10-2012 |
| 20120113416 | OPTICAL DEFECT AMPLIFICATION FOR IMPROVED SENSITIVITY ON PATTERNED LAYERS - A method for wafer defect inspection may include, but is not limited to: providing an inspection target; applying at least one defect inspection enhancement to the inspection target; illuminating the inspection target including the at least one inspection enhancement to generate one or more inspection signals associated with one or more features of the inspection target; detecting the inspection signals; and generating one or more inspection parameters from the inspection signals. An inspection target may include, but is not limited to: at least one inspection layer; and at least one inspection enhancement layer. | 05-10-2012 |
| 20120094400 | FEEDFORWARD/FEEDBACK LITHO PROCESS CONTROL OF STRESS AND OVERLAY - A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables. | 04-19-2012 |
| 20120090495 | Dual Tray Carrier Unit - A tray carrier system having a tray loading position, a tray off-loading position, and four parallel rails extending from the tray loading position to the tray off-loading position. A tray carrier platform is disposed on each rail, where each tray carrier platform is configured to move along the rail on which it is disposed between the tray loading position and the tray off-loading position. Each tray carrier platform includes a carriage for engaging the rail, swing arms attached to the carriage, retaining pieces attached to the swing arms for selectively retaining and releasing a tray, and means for moving the swing arms between an open position and a closed position. The retaining pieces retain the tray at a tray level when the swing arms are in the closed position, and release the tray and are disposed entirely below the tray level when the swing arms are in the open position. Two of the tray carrier platforms form a first tray carrier unit, and the other two tray carrier platforms form a second tray carrier unit. The first tray carrier unit is capable of passing underneath a tray carried by the second tray carrier unit in the closed position when the first tray carrier unit is in the open position. | 04-19-2012 |
| 20120087143 | RING LIGHT ILLUMINATOR AND BEAM SHAPER FOR RING LIGHT ILLUMINATOR - A ring light illuminator with annularly arranged light sources is disclosed. To each light source there corresponds a beam shaper comprising a light collector, a homogenizing means for light from the light source, and an imaging means for imaging an output of the homogenizing means into an area to be illuminated. The homogenizing means in embodiments is a rod, into which light from the light collector is directed. The end of the rod opposite the light collector is imaged by the imaging means into the area to be illuminated. | 04-12-2012 |
| 20120086799 | FOCUS OFFSET CONTAMINATION INSPECTION - A system and method for detecting defects on a reticle is disclosed. The method may comprise determining a best focus setting for imaging the reticle; obtaining a first image of the reticle, the first image obtained at the best focus setting plus a predetermined offset; obtaining a second image of the reticle, the second image obtained at the best focus setting minus the predetermined offset; generating a differential image, the differential image representing a difference between the first image and the second image; and identifying a defect on the reticle based on the differential image. The method in accordance with the present disclosure may also be utilized for detecting defects on at least a portion of the reticle. | 04-12-2012 |
| 20120086796 | COORDINATE FUSION AND THICKNESS CALIBRATION FOR SEMICONDUCTOR WAFER EDGE INSPECTION - A system may include a support configured to rotatably support a wafer. The system may also include an imager for generating an image of a wafer, where the image includes a first coordinate reference. The system may also include a profiler for generating a profile of the wafer, where the profile includes a second coordinate reference. The system may further include control programming for locating at least one structural feature of an edge of the wafer recognizable by both the imager and the profiler for allowing the first coordinate reference to be mapped to the second coordinate reference. The wafer used in calibration may have discrete edge features detectable in an edge imager and in an edge profiler. | 04-12-2012 |
| 20120084041 | METHOD AND SYSTEM FOR PROVIDING TOOL INDUCED SHIFT USING A SUB-SAMPLING SCHEME - The present invention may include measuring tool induced shift (TIS) on at least one wafer of a lot of wafers via an omniscient sampling process, randomly generating a plurality of sub-sampling schemes, each of the set of randomly generated sub-sampling schemes having the same number of sampled fields, measuring TIS at each location of each of the randomly generated sub-sampling schemes, approximating a set of TIS values for each of the randomly generated sub-sampling schemes utilizing the TIS measurements from each of the randomly generated sub-sampling schemes, wherein each set of TIS values for each of the randomly generated sub-sampling schemes is calculated utilizing an interpolation process configured to approximate a TIS value for each location not included in a randomly generated sub-sampling scheme, and determining a selected sub-sampling scheme by comparing each of the calculated sets of TIS values to the measured TIS of the omniscient sampling process. | 04-05-2012 |
| 20120074514 | ETCH-RESISTANT COATING ON SENSOR WAFERS FOR IN-SITU MEASUREMENT - A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating. | 03-29-2012 |
| 20120062877 | Referenced Inspection Device - A tool for investigating a substrate, where the tool has a tool head for investigating the substrate, a chuck for disposing an upper surface of the substrate in proximity to the tool head, and an air bearing disposed on the tool head adjacent the substrate. The air bearing has a pressure source and a vacuum source, where the vacuum source draws the substrate toward the air bearing and the pressure source prevents the substrate from physically contacting the air bearing. The pressure source and the vacuum source work in cooperation to dispose the upper surface of the substrate at a known distance from the tool head. By using the air bearing as part of the tool in this manner, registration of the substrate to the tool head is accomplished relative to the upper surface of the substrate, not the back side of the substrate. | 03-15-2012 |
| 20120055761 | Solar Cell Transport - A transport system for substrates, the transport system having at least one belt for receiving the substrates thereon, retainers disposed at spaced distances on the belt, the spaced distances being at least as wide as a width of the substrates, the retainers rising to an elevation above the belt that is sufficient to stop the substrates from sliding when the substrates bump against the retainers, a motor for moving the belt, and a motion controller for providing asymmetric acceleration and deceleration of the belt, such that the belt decelerates faster than the belt accelerates, thereby aligning the substrates against the retainers through successive acceleration and deceleration cycles. | 03-08-2012 |
| 20120044486 | Detecting Defects on a Wafer - Systems and methods for detecting defects on a wafer are provided. | 02-23-2012 |
| 20120033226 | OPTICS SYMMETRIZATION FOR METROLOGY - The present invention includes an illumination source, at least one illumination symmetrization module (ISM) configured to symmetrize at least a portion of light emanating from the illumination source, a first beam splitter configured to direct a first portion of light processed by the ISM along an object path to a surface of one or more specimens and a second portion of light processed by the ISM along a reference path, and a detector disposed along a primary optical axis, wherein the detector is configured to collect a portion of light reflected from the surface of the one or more specimens. | 02-09-2012 |
| 20120032065 | DYNAMIC WAVEFRONT CONTROL OF A FREQUENCY CONVERTED LASER SYSTEM - The present invention is directed to a laser system in which a current laser wavefront performance of the laser system may be monitored. Further, the laser system embodiments disclosed herein may be configured for correcting the laser wavefront internally via correction system(s) within the laser system. Still further, the correction system(s) disclosed herein may provide a long lifetime of performance and may be configured for having a minimal impact on photocontamination. | 02-09-2012 |
| 20120029858 | DYNAMIC CARE AREAS - Various embodiments for determining dynamic care areas are provided. | 02-02-2012 |
| 20120029854 | READOUT METHODOLOGY FOR MULTI-CHANNEL ACQUISITION OF SPATIALLY DISTRIBUTED SIGNAL - A readout apparatus and method for processing spatially distributed signals is disclosed. The readout apparatus and method may reduce/eliminate the impact gain variations among a plurality of sensing channels. This is done by continuously varying the dispersion properties of a signal distribution device, which may induce a spatial shift of the signal distribution during data acquisition, allowing the distributed signals to move across the sensor area. Shifting of the distributed signals may occur multiple times, hence eliminating the impact of gain variation across the sensor array. The accumulated data may be re-assembled subsequently to complete the readout operation. | 02-02-2012 |
| 20120026749 | LOW STRAY LIGHT BEAM DUMP WITH FIBER DELIVERY - The present invention is directed to a beam dump which is configured for not increasing a temperature of a laser with which it may be implemented. The beam dump may include an opaque enclosure which is configured for receiving light (ex.—initial light) from a light source (ex.—a frequency-converted laser), said light being delivered through an aperture of the enclosure via one or more connected optical fibers. The received light may be scattered within the enclosure. However, the beam dump is configured for minimizing the amount of light which is back scattered light into the fiber(s). For instance, the amount of back scattered light may be less than 1/1000 of the initial light. Further, the beam dump may be configured for minimizing photocontamination which may be caused when the light contacts interior surfaces of the enclosure. Still further, the beam dump may be a small size, low cost structure. | 02-02-2012 |
| 20120026489 | Multi-Spot Illumination for Wafer Inspection - Illumination subsystems for multi-spot wafer inspection are provided. | 02-02-2012 |
| 20120022836 | METHOD FOR AUTOMATED DETERMINATION OF AN OPTIMALLY PARAMETERIZED SCATTEROMETRY MODEL - Provided is an automated determination of an optimized parameterization of a scatterometry model for analysis of a sample diffracting structure having unknown parameters. A preprocessor determines from a plurality of floating model parameters, a reduced set of model parameters which can be reasonably floated in the scatterometry model based on a relative precision for each parameter determined from the Jacobian of measured spectral information with respect to each parameter. The relative precision for each parameter is determined in a manner which accounts for correlation between the parameters for a combination. | 01-26-2012 |
| 20120022679 | ADVANCED PROCESS CONTROL OPTIMIZATION - A method for automatic process control (APC) performance monitoring may include, but is not limited to: computing one or more APC performance indicators for one or more production lots of semiconductor devices; and displaying a mapping of the one or more APC performance indicators to the one or more production lots of semiconductor devices. | 01-26-2012 |
| 20120013898 | Inspecting a Workpiece Using Polarization of Scattered Light - A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The system features a variable polarization a polarizing relay assembly arranged to selectively permit the scattered light having a selected polarization orientation to pass along a detector optical axis to a light detection unit in the detection subsystem. The system also features a collector output width varying subsystem for varying the width of an output slit in response to changes in the location of the location scanned on the workpiece. | 01-19-2012 |
| 20120010843 | IN-PLACE MANAGEMENT OF SEMICONDUCTOR EQUIPMENT RECIPES - Systems and methods for managing optical inspection target components are disclosed. A method may include, but is not limited to: storing at least one external recipe component at an inspection tool node; associating at least one proxy component with the at least one external recipe component; associating the at least one external recipe component with at least one optical inspection target recipe; and storing the at least one optical inspection target recipe including the at least one proxy component in a recipe distribution server. A method may include, but is not limited to: receiving a selection of at least one recipe associated with an optical inspection target to be inspected at a first inspection tool node; and determining whether one or more external recipe components associated with the recipe are stored on at least one of the first inspection tool node and a second node. | 01-12-2012 |
| 20120008137 | Active Planar Autofocus - A system for inspecting a constant layer depth relative to a particular device layer. The system has an image sensor with a fixed focal plane. A focus sensor senses the surface topography of the substrate and outputs a focus data stream. A stage moves the substrate in an XY plane, and a motor moves the substrate in a Z dimension. A controller operates the system in one of a setup mode and an inspection mode. In the setup mode the controller controls XY movement of the substrate so as to scan a first portion of the substrate. The controller receives the focus data stream, concurrently receives XY data, and stores correlated XYZ data for the substrate. In the inspection mode the controller controls XY movement of the substrate so as to scan a second portion of the substrate. The controller receives the focus data stream, concurrently receives XY data, and subtracts the stored Z data from the focus data stream to produce a virtual data stream. The controller feeds the virtual data stream plus an offset to the motor for moving the substrate up and down during the inspection, thereby holding the focal plane at a desired Z distance, regardless of the surface topography of the substrate. | 01-12-2012 |
| 20110320149 | Selecting One or More Parameters for Inspection of a Wafer - Computer-implemented methods, computer-readable media, and systems for selecting one or more parameters for inspection of a wafer are provided. | 12-29-2011 |
| 20110317168 | SYSTEM AND METHOD FOR INTERFEROMETRIC AUTOFOCUSING - The present invention includes a camera configured to collect light reflected from the surface of a specimen, a two beam interference optical system including: an illumination source; a reference mirror configured to reflect substantially less light from a center region than from a peripheral region; and a first beam splitter configured to direct a first portion of light from the illumination source along an object path and a second portion of light from the illumination source along a reference path, wherein the camera and reference mirror are arranged such that light reflected from the reference mirror does not impinge on a FOV of the camera; and an autofocusing system disposed along a secondary optical axis, wherein the autofocusing system is configured to analyze one or more interference fringes created by a superposition of light reflected from the specimen surface and the peripheral region of the reference mirror surface. | 12-29-2011 |
| 20110310388 | DISCRETE POLARIZATION SCATTEROMETRY - Systems and methods for discrete polarization scatterometry are provided. | 12-22-2011 |
| 20110299759 | RETICLE DEFECT INSPECTION WITH MODEL-BASED THIN LINE APPROACHES - Provided are novel inspection methods and systems for inspecting photomasks to identify various defects using a model-based approach and information obtained from modeled images. Modeled or simulation images are generated directly from test or reference images. Some examples include aerial images that represent expected patterns projected by a lithography system on a substrate as well as photoresist images that represent expected resist patterns. Test images are first represented as a band limited mask pattern, which may include only linear terms for faster image processing. This pattern is then used to construct a modeled image, which in turn is used to construct a model-based feature map. This map serves as a base for inspecting the original test images to identify photomask defects and may include information that allows differentiating between various feature types based on their lithographic significance and other characteristics. | 12-08-2011 |
| 20110299758 | Wafer Plane Detection of Lithographically Significant Contamination Photomask Defects - Provided are novel methods and systems for inspecting photomasks to identify lithographically significant contamination defects. Inspection may be performed without a separate reference image provided from a database or another die. Inspection techniques described herein involve capturing one or more test images of a photomask and constructing corresponding test “simulation” images using specific lithographic and/or resist models. These test simulation images simulate printable and/or resist patterns of the inspected photomask. Furthermore, the initial test images are used in parallel operations to generate “synthetic” images. These images represent a defect-free photomask pattern. The synthetic images are then used for generating reference simulation images, which are similar to the test simulation images but are free from lithographically significant contamination defects. Finally, the reference simulation images are compared to the test simulation images to identify the lithographically significant contamination defects on the photomask. | 12-08-2011 |
| 20110291566 | Multi-Wavelength Pumping to Sustain Hot Plasma - A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature. | 12-01-2011 |
| 20110279819 | ILLUMINATION SUBSYSTEMS OF A METROLOGY SYSTEM, METROLOGY SYSTEMS, AND METHODS FOR ILLUMINATING A SPECIMEN FOR METROLOGY MEASUREMENTS - Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements are provided. | 11-17-2011 |
| 20110276935 | SYSTEMS AND METHODS FOR DETECTING DESIGN AND PROCESS DEFECTS ON A WAFER, REVIEWING DEFECTS ON A WAFER, SELECTING ONE OR MORE FEATURES WITHIN A DESIGN FOR USE AS PROCESS MONITORING FEATURES, OR SOME COMBINATION THEREOF - Various systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof are provided. | 11-10-2011 |
| 20110255081 | APPARATUS AND METHODS FOR SETTING UP OPTICAL INSPECTION PARAMETERS - Provided are novel methods and systems for setting up ranges of optical inspection parameters. These ranges may be later used for inspection of photovoltaic cells for discoloration, for example. A set of values corresponding to an inspection parameter, such as hue, saturation, and intensity, is obtained from a set-up image. The image includes multiple set-up areas, e.g., a defined group of pixels, wherein each set-up area is assigned a corresponding value in the set. A test image is then constructed from multiple test areas that are also associated with the values in the set. Each test area is assigned a color from a set of user defined colors based on the corresponding value and user defined ranges. A user interface includes both a range diagram and test image, which are used to adjust the ranges in the diagram that result in modification of the test image. Adjusting is repeated until the test image meets predetermined criteria. | 10-20-2011 |
| 20110242528 | OPTICAL IMAGING SYSTEM WITH CATOPTRIC OBJECTIVE; BROADBAND OBJECTIVE WITH MIRROR; AND REFRACTIVE LENSES AND BROADBAND OPTICAL IMAGING SYSTEM HAVING TWO OR MORE IMAGING PATHS - An optical system may include an objective having at least four mirrors including an outermost mirror with aspect ratio <20:1 and focusing optics including a refractive optical element. The objective provides imaging at numerical aperture >0.7, central obscuration <35% in pupil. An objective may have two or more mirrors, one with a refractive module that seals off an outermost mirror's central opening. A broad band imaging system may include one objective and two or more imaging paths that provide imaging at numerical aperture >0.7 and field of view >0.8 mm. An optical imaging system may comprise an objective and two or more imaging paths. The imaging paths may provide two or more simultaneous broadband images of a sample in two or more modes. The modes may have different illumination and/or collection pupil apertures or different pixel sizes at the sample. | 10-06-2011 |
| 20110240610 | METHODS OF AND APPARATUSES FOR MAINTENANCE, DIAGNOSIS, AND OPTIMIZATION OF PROCESSES - A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor. | 10-06-2011 |
| 20110228263 | ILLUMINATING A SPECIMEN FOR METROLOGY OR INSPECTION - Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided. | 09-22-2011 |
| 20110224932 | MONITORING OF TIME-VARYING DEFECT CLASSIFICATION PERFORMANCE - Systems and methods for monitoring time-varying classification performance are disclosed. A method may include, but is not limited to: receiving one or more signals indicative of one or more properties of one or more samples from one or more scanning inspection tools; determining populations of one or more defect types for the one or more samples according an application of one or more classification rules to the one or more signals received from the one or more scanning inspection tools; determining populations of the one or more defect types for the one or more samples using one or more high-resolution inspection tools; and computing one or more correlations between populations of one or more defect types for one or more samples determined from application of one or more classification rules applied to one or more signals received from the one or more scanning inspection tools and populations of the one or more defect types for the one or more samples determined using the one or more high-resolution inspection tools. | 09-15-2011 |
| 20110218762 | SYSTEMS AND METHODS FOR WAFER EDGE FEATURE DETECTION AND QUANTIFICATION - Disclosed herein is a method to enhance detection and quantification of features in the wafer edge/wafer roll off regions. Modifications and improvements have been made to earlier methods which enable improved accuracy and increased scope of feature detection. | 09-08-2011 |
| 20110205554 | HIGH RESOLUTION MONITORING OF CD VARIATIONS - An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry. | 08-25-2011 |
| 20110205529 | Cell For Light Source - A cell for a vacuum ultraviolet plasma light source, the cell having a closed sapphire tube containing at least one noble gas. Such a cell does not have a metal housing, metal-to-metal seals, or any other metal flanges or components, except for the electrodes (in some embodiments). In this manner, the cell is kept to a relatively small size, and exhibits a more uniform heating of the gas and cell than can be readily achieved with a hybridized metal/window cell design. These designs generally result in higher plasma temperatures (a brighter light source), shorter wavelength output, and lower optical noise due to fewer gas convection currents created between the hotter plasma regions and surrounding colder gases. These cells provide a greater amount of output with wavelengths in the vacuum ultraviolet range than do quartz or fused silica cells. These cells also produce continuous spectral emission well into the infrared range, making them a broadband light source. | 08-25-2011 |
| 20110202298 | METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMIZED SAMPLING SCHEME WITH SMART INTERPOLATION - The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables. | 08-18-2011 |
| 20110196639 | COMPUTER-IMPLEMENTED METHODS, COMPUTER-READABLE MEDIA, AND SYSTEMS FOR DETERMINING ONE OR MORE CHARACTERISTICS OF A WAFER - Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer are provided. | 08-11-2011 |
| 20110187848 | COMPUTER-IMPLEMENTED METHODS, COMPUTER-READABLE MEDIA, AND SYSTEMS FOR CLASSIFYING DEFECTS DETECTED IN A MEMORY DEVICE AREA ON A WAFER - Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer are provided. | 08-04-2011 |
| 20110174777 | PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER - A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s). | 07-21-2011 |
| 20110172804 | Scanner Performance Comparison And Matching Using Design And Defect Data - A system and method of matching multiple scanners using design and defect data are described. A golden wafer is processed using a golden tool. A second wafer is processed using a second tool. Both tools provide focus/exposure modulation. Wafer-level spatial signatures of critical structures for both wafers can be compared to evaluate the behavior of the scanners. Critical structures can be identified by binning defects on the golden wafer having similar patterns. In one embodiment, the signatures must match within a certain percentage or the second tool is characterized as a “no match”. Reticles can be compared in a similar manner, wherein the golden and second wafers are processed using a golden reticle and a second reticle, respectively. | 07-14-2011 |
| 20110170766 | Adaptive Signature Detection - A processor-based method for detecting defects in an integrated circuit, by creating an image of at least a portion of the integrated circuit with a sensor, grouping pixels of the image into bins based at least in part on a common characteristic of the pixels that are grouped within a given bin, creating a histogram of the pixels in each of the bins, calculating a mean value of the histogram for each of the bins, comparing the mean value for each of the bins to a threshold value, flagging as defect candidates those bins where the mean value of the bin varies from the threshold value by more than a predetermined amount, and performing signature detection on the bins that are flagged as defect candidates, where the image of the integrated circuit is not directly compared to any other image of an integrated circuit. | 07-14-2011 |
| 20110170091 | INSPECTION GUIDED OVERLAY METROLOGY - Inspection guided overlay metrology may include performing a pattern search in order to identify a predetermined pattern on a semiconductor wafer, generating a care area for all instances of the predetermined pattern on the semiconductor wafer, identifying defects within generated care areas by performing an inspection scan of each of the generated care areas, wherein the inspection scan includes a low-threshold or a high sensitivity inspection scan, identifying overlay sites of the predetermined pattern of the semiconductor wafer having a measured overlay error larger than a selected overlay specification utilizing a defect inspection technique, comparing location data of the identified defects of a generated care area to location data of the identified overlay sites within the generated care area in order to identify one or more locations wherein the defects are proximate to the identified overlay sites, and generating a metrology sampling plan based on the identified locations. | 07-14-2011 |
| 20110168185 | LINER FOR ENCLOSING A BODY PART DURING AN IMAGING PROCEDURE | 07-14-2011 |
| 20110164648 | Alleviation Of Laser-Induced Damage In Optical Materials By Suppression Of Transient Color Centers Formation And Control Of Phonon Population - Laser-induced damage in an optical material can be mitigated by creating conditions at which light absorption is minimized. Specifically, electrons populating defect energy levels of a band gap in an optical material can be promoted to the conduction band—a process commonly referred to as bleaching. Such bleaching can be accomplished using a predetermined wavelength that ensures minimum energy deposition into the material, ideally promoting electron to just inside the conduction band. In some cases phonon (i.e. thermal) excitation can also be used to achieve higher depopulation rates. In one embodiment, a bleaching light beam having a wavelength longer than that of the laser beam can be combined with the laser beam to depopulate the defect energy levels in the band gap. The bleaching light beam can be propagated in the same direction or intersect the laser beam. | 07-07-2011 |
| 20110144943 | Localized Substrate Geometry Characterization - A system for evaluating the metrological characteristics of a surface of a substrate, the system including an optical substrate measurement system, a data analyzing system for analyzing data in an evaluation area on the substrate, applying feature-specific filters to characterize the surface of the substrate, and produce surface-specific metrics for characterizing and quantifying a feature of interest, the surface-specific metrics including a range metric for quantifying maximum and minimum deviations in the evaluation area, a deviation metric for quantifying a point deviation having a largest magnitude in a set of point deviations, where the point deviations are an amount of deviation from a reference plane fit to the evaluation area, and a root mean square metric calculated from power spectral density. | 06-16-2011 |
| 20110137576 | Process Excursion Detection - A method for analyzing defect information on a substrate, including logically dividing the substrate into zones, and detecting defects on the substrate to produce the defect information. The defect information from the substrate is analyzed on a zone by zone basis to produce defect level classifications for the defects within each zone. The zonal defect level classifications are analyzed according to at least one analysis method. The defect level classifications are preferably selected from a group of defect level classifications that is specified by a recipe. Preferably, the at least one analysis method includes at least one of zonal defect distribution, automatic defect classification, spatial signature analysis, and excursion detection. The defect level classifications preferably include at least one of individual defect, defect cluster, and spatial signature analysis signature. In one embodiment the defect information is logically divided into configurable zones after the defects on the substrate have been detected. | 06-09-2011 |
| 20110133750 | INLINE INSPECTION OF PHOTOVOLTAICS FOR ELECTRICAL DEFECTS - A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material. | 06-09-2011 |
| 20110125458 | Spectroscopic Scatterometer System - Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure. | 05-26-2011 |
| 20110122398 | Integrated Visible Pilot Beam for Non-Visible Optical Waveguide Devices - In one embodiment, a radiation based analysis system comprises a first radiation source to generate first radiation having a wavelength outside the visible spectrum, a second radiation source to generate second radiation having a wavelength within the visible spectrum, and a waveguide coupler to couple a portion of the first radiation and a portion of the second radiation into a combined radiation beam such that the first radiation and the second radiation follow a path that is substantially coaxial. | 05-26-2011 |
| 20110116077 | EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers - Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long. | 05-19-2011 |
| 20110112809 | Photoresist Simulation - A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile. | 05-12-2011 |
| 20110112796 | Curvature-Based Edge Bump Quantification - Evaluating irregularities in surfaces of objects such as semiconductor wafers using a thickness profile of a surface section and analyzing the profile to obtain information of an irregularity start position, magnitude, and span along with surface slope and height information. | 05-12-2011 |
| 20110075138 | External beam delivery system using catadioptric objective with aspheric surfaces - An inspection system including a catadioptric objective that facilitates dark-field inspection is provided. The objective includes an outer element furthest from the specimen having an outer element partial reflective surface oriented toward the specimen, an inner element nearest the specimen having a center lens comprising an inner element partial reflective surface oriented away from the specimen, and a central element positioned between the outer lens and the inner lens. At least one of the outer element, inner element, and central element has an aspheric surface. The inner element is spatially configured to facilitate dark-field inspection of the specimen. | 03-31-2011 |
| 20110074341 | NON-CONTACT INTERFACE SYSTEM - An interface system for a sensor wafer may comprise a sensor wafer having a substrate. One or more sensors may be mounted to the substrate. An electronics module may be mounted to the substrate and coupled to the one or more sensors. An energy storage device may be mounted to the substrate and coupled to the electronics module. A secondary coil may be attached to a surface of the sensor wafer, and coupled to the electronics module of the sensor wafer, having a diameter of at least 50 millimeters. A primary coil may be attached to a front opening universal pod (FOUP). The primary coil, may situated and oriented in the FOUP such that the primary coil is concentric with the secondary coil and at least 8, but less than 12 millimeters from the sensor wafer when the sensor wafer is stored in a slot in the FOUP. | 03-31-2011 |
| 20110069312 | METROLOGY SYSTEMS AND METHODS - Various metrology systems and methods are provided. | 03-24-2011 |
| 20110069306 | Referenced Inspection Device - A tool for investigating a substrate, where the tool has a tool head for investigating the substrate, a chuck for disposing an upper surface of the substrate in proximity to the tool head, and an air bearing disposed on the tool head adjacent the substrate. The air bearing has a pressure source and a vacuum source, where the vacuum source draws the substrate toward the air bearing and the pressure source prevents the substrate from physically contacting the air bearing. The pressure source and the vacuum source work in cooperation to dispose the upper surface of the substrate at a known distance from the tool head. By using the air bearing as part of the tool in this manner, registration of the substrate to the tool head is accomplished relative to the upper surface of the substrate, not the back side of the substrate. | 03-24-2011 |
| 20110058174 | Substrate Edge Inspection - An apparatus for inspecting an edge of a substrate. A light source produces a light beam, and a two-dimensional beam deflector receives the light beam and creates a semi-annular scanning beam. A first flared parabolic surface receives the semi-annular scanning beam and directs the semi-annular scanning beam onto the edge of the substrate, thereby creating specularly reflected light from the edge of the substrate. A second flared parabolic surface receives and directs the specularly reflected light to a detector. The detector receives the directed specularly reflected light and produces signals. An analyzer analyzes the signals and detects defects at the edge of the substrate. | 03-10-2011 |
| 20110054664 | Spin Coating Modeling - A method for setting processing parameters for fabricating an integrated circuit, by creating a mathematical model of a spin coated surface of a material over a non-flat substrate surface, where the mathematical model includes, a smoothing algorithm, where the smoothing algorithm uses as inputs only, a nominal thickness of the spin coated surface, a minimum thickness of the spin coated surface, and an interaction length, and a constraint that the spin coated surface cannot intersect the substrate surface, solving the mathematical model to determine the spin coated surface, and using the modeled spin coated surface to set the processing parameters for fabricating the integrated circuit. | 03-03-2011 |
| 20110051150 | UNIQUE MARK AND METHOD TO DETERMINE CRITICAL DIMENSION UNIFORMITY AND REGISTRATION OF RETICLES COMBINED WITH WAFER OVERLAY CAPABILITY - A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure. | 03-03-2011 |
| 20110051116 | Substrate Matrix To Decouple Tool And Process Effects - A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property. | 03-03-2011 |
| 20110043797 | Image Collection - An inspection system for creating images of a substrate. A light source directs an incident light onto the substrate, and a light source timing control controls a pulse timing of the incident light. A stage holds the substrate and moves the substrate under the incident light, so that the substrate reflects the incident light as a reflected light. A stage position sensor reports a position of the stage, and a stage position control controls the position of the stage. A time domain integration sensor receives the reflected light, and a time domain integration sensor timing control controls a line shift of the time domain integration sensor. A control system is in communication with the light source timing control, the stage position control, and the time delay integration sensor timing control, and sets the pulse timing of the incident light, the position of the stage, and the line shift of the time delay integration sensor, such that a single line of the time domain integration sensor integrates reflected light from more than one pulse of the incident light from the light source. | 02-24-2011 |
| 20110040527 | PROCESS CONDITION SENSING WAFER AND DATA ANALYSIS SYSTEM - A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy, operating range, and reliability of the device. | 02-17-2011 |
| 20110027919 | Measurement and control of strained devices - A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device. | 02-03-2011 |
| 20110022227 | Dual Scanning Stage - A profilometer having a guide beam for providing translational movement of substrates in a Y axis relative to a stylus. A first stage receives a first substrate, where the first stage is slidably mounted to the guide beam. The first stage is associated with a first motor for providing independent translational movement for the first stage in an X axis relative to the stylus. A second stage receives a second substrate, where the second stage is slidably mounted to the guide beam. The second stage is associated with a second motor for providing independent translational movement for the second stage in the X axis relative to the stylus, where the first stage and the second stage move together in the Y axis as the guide beam moves in the Y axis, and move independently of one another in the X axis. A robot loads the substrates onto and unloads the substrates off of the first stage and the second stage. A controller directs the robot to load the second substrate onto the second stage, while simultaneously directing the first stage and the guide beam to scan the first substrate on the first stage in the X and Y axes under the stylus, thereby generating profile readings of the first substrate on the first stage. | 01-27-2011 |
| 20110019206 | Auto Focus System for Reticle Inspection - Methods and apparatus relating to the inspection of photomasks are described. In an embodiment, an inspection tool may be automatically focused on a reticle utilizing various topographic mapping techniques. Other embodiments are also described. | 01-27-2011 |
| 20110019197 | Scattered Light Separation - An apparatus for detecting top scattered light from a substrate. A source directs a light onto a position on the substrate. The light thereby reflects off in a specular beam, scatters off the top surface, and scatters off a bottom surface of the substrate. An objective receives the top and bottom scattered light. The objective has a first focal point focused on the position on the top surface of the substrate, and a second focal point focused on a pinhole field stop. The pinhole field stop passes the top scattered light that is focused on the pinhole field stop, and blocks the bottom scattered light. A sensor receives and quantifies the top scattered light. | 01-27-2011 |
| 20100329540 | METHODS FOR GENERATING A STANDARD REFERENCE DIE FOR USE IN A DIE TO STANDARD REFERENCE DIE INSPECTION AND METHODS FOR INSPECTING A WAFER - Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step. | 12-30-2010 |
| 20100315625 | METHODS FOR DEPTH PROFILING IN SEMICONDUCTORS USING MODULATED OPTICAL REFLECTANCE TECHNOLOGY - Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile. | 12-16-2010 |
| 20100301437 | Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems - A sensor for capturing light at the ultraviolet (UV) or the deep UV wavelength includes a multi-layer anti-reflective coating (ARC). In a two-layer ARC, the first layer is formed on either the substrate or the circuitry layer, and the second layer is formed on the first layer and receives the light as an incident light beam. Notably, the first layer is at least twice as thick as the second layer, thereby minimizing an electrical field at a substrate surface due to charge trapping in the ARC. In a four-layer ARC, the third layer is formed on the second layer and the fourth layer is formed on the third layer. The first and third layers may be formed from the same material, and the second and fourth layers may be formed from materials having same/similar indexes of refraction. In this case, the first layer is at least twice as thick as any of the second, third, or fourth layers. | 12-02-2010 |
| 20100295258 | Z-STAGE WITH DYNAMICALLY DRIVEN STAGE MIRROR AND CHUCK ASSEMBLY - Substrate support apparatus and methods are disclosed. Motion of a substrate chuck relative to a stage mirror may be dynamically compensated by sensing a displacement of the substrate chuck relative to the stage mirror and coupling a signal proportional to the displacement in one or more feedback loops with Z stage actuators and/or XY stage actuators coupled to the stage mirror. Alternatively, a substrate support apparatus may include a Z stage plate a stage mirror, one or more actuators attached to the Z stage plate, and a substrate chuck mounted to the stage mirror with constraints on six degrees of freedom of movement of the substrate chuck. The actuators impart movement to the Z stage in a Z direction as the Z stage plate is scanned in a plane perpendicular to the Z direction. The actuators may include force flexures having a base portion attached to the Z stage plate and a cantilever portion extending in a lateral direction from the base portion. The cantilever portion may include a parallelogram flexure coupled between the base portion and a free end of the cantilever portion. | 11-25-2010 |
| 20100294051 | PROCESS CONDITION SENSING WAFER AND DATA ANALYSIS SYSTEM - A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy, operating range, and reliability of the device. Isolation may be provided by vacuum or suitable material and phase change material may be located adjacent to electronics to maintain a low temperature. | 11-25-2010 |
| 20100279213 | METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER - Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering the parameter compensates for non-time varying spatial variation in a temperature to which the wafer is exposed during a post exposure bake step of the lithography process and an additional variation in the post exposure bake step. | 11-04-2010 |
| 20100265518 | Back Quartersphere Scattered Light Analysis - A surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The optical collection and detection system features back collectors disposed in the back quartersphere, outside the incident plane, for collecting light scattered from the surface of the workpiece. The back collectors are disposed at a relative minimum in the portion of scattered light attributable to haze relative to the portion of scattered light attributable to defect scatter portion, or, alternatively, at a relative minimum in the Rayleigh scatter. | 10-21-2010 |
| 20100235134 | METHODS AND SYSTEMS FOR GENERATING AN INSPECTION PROCESS FOR A WAFER - Methods and systems for generating an inspection process for a wafer are provided. One computer-implemented method includes separately determining a value of a local attribute for different locations within a design for a wafer based on a defect that can cause at least one type of fault mechanism at the different locations. The method also includes determining a sensitivity with which defects will be reported for different locations on the wafer corresponding to the different locations within the design based on the value of the local attribute. In addition, the method includes generating an inspection process for the wafer based on the determined sensitivity. Groups may be generated based on the value of the local attribute thereby assigning pixels that will have at least similar noise statistics to the same group, which can be important for defect detection algorithms. Better segmentation may lead to better noise statistics estimation. | 09-16-2010 |
| 20100235114 | SYSTEMS AND METHODS FOR DETERMINING ONE OR MORE CHARACTERISTICS OF A SPECIMEN USING RADIATION IN THE TERAHERTZ RANGE - Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output. | 09-16-2010 |
| 20100208979 | USE OF DESIGN INFORMATION AND DEFECT IMAGE INFORMATION IN DEFECT CLASSIFICATION - Defects observed by imaging tools may be classified by automatic comparison of features observed in a defect image with design information relating to corresponding portions of the image. Defect information may be generated from a defect image from a defect imaging tool. Design information relating to one or more structures to be formed on the substrate in a vicinity of the defect may be retrieved. The defect may be classified based on a combination of the defect information from the defect image and design information relating to one or more structures to be formed on the substrate in the vicinity of the defect. | 08-19-2010 |
| 20100208272 | METHOD AND APPARATUS FOR MEASURING SHAPE OR THICKNESS INFORMATION OF A SUBSTRATE - An interferometer system and method may be used to measure substrate thickness or shape. The system may include two spaced apart reference flats having that form an optical cavity between two parallel reference surfaces. A substrate holder may be configured to place the substrate in the cavity with first and second substrate surfaces substantially parallel with corresponding first and second reference surfaces such that a space between the first or second substrate surface is three millimeters or less from a corresponding one of the reference surfaces or a damping surface. Interferometer devices may be located on diametrically opposite sides of the cavity and optically coupled thereto. The interferometers can map variations in spacing between the substrate surfaces and the reference surfaces, respectively, through interference of light optically coupled to and from to the cavity via the interferometer devices. | 08-19-2010 |
| 20100188657 | SYSTEMS AND METHODS FOR DETECTING DEFECTS ON A WAFER - Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data. | 07-29-2010 |
| 20100188655 | TDI Sensor Modules With Localized Driving And Signal Processing Circuitry For High Speed Inspection - An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality of TDI sensor modules. The plurality of TDI sensor modules can be positioned capture a same inspection region or different inspection regions. The plurality of TDI sensor modules can be identical or provide for different integration stages. Spacing of the modules can be arranged to provide 100% coverage of the inspection region in one pass or for fractional coverage requiring two or more passes for complete coverage. | 07-29-2010 |
| 20100175033 | SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION - A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized. | 07-08-2010 |
| 20100157315 | HYBRID DIFFRACTION MODELING OF DIFFRACTING STRUCTURES - Diffraction modeling of a diffracting structure employing at least two distinct differential equation solution methods. In an embodiment, a rigorous coupled wave (RCW) method and a coordinate transform (C) method are coupled with a same S-matrix algorithm to provide a model profile for a scatterometry measurement of a diffracting structure having unknown parameters. In an embodiment, a rigorous coupled wave (RCW) method and a coordinate transform (C) method generate a modeled angular spectrum of diffracted orders as a prediction for how a diffracting photolithographic mask images onto a substrate. | 06-24-2010 |
| 20100155968 | Overlay Metrology Target - In one embodiment, a metrology target for determining a relative shift between two or more successive layers of a substrate may comprise; an first structure on a first layer of a substrate and an second structure on a successive layer to the first layer of the substrate arranged to determine relative shifts in alignment in both the x and y directions of the substrate by analyzing the first structure and second structure overlay. | 06-24-2010 |
| 20100155098 | COMPONENT PACKAGE FOR MAINTAINING SAFE OPERATING TEMPERATURE OF COMPONENTS - A thermally insulated electronic component package and an instrument suitable for process conditions in a high temperature environment are disclosed. The component package includes a thin electronic component, a thermally insulating outer enclosure, and an insert made of a thermally insulating material that is sized and shaped to fit within the outer enclosure. The insert includes an inner cavity sized and shaped to receive the thin electronic component. In the instrument, the outer enclosure can be configured to mount to a substrate. | 06-24-2010 |
| 20100149527 | System and Method for Controlling a Beam Source in a Workpiece Surface Inspection System - A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The system features a variable scan speed beam scanning subsystem, preferably using an acousto-optic deflector, with beam compensation, so that variable scanning speeds can be achieved. Also included are methods and systems for improving the signal to noise ratio by use of scatter reducing complements, and a system and method for selectively and repeatedly scanning a region of interest on the surface in order to provide additional observations of the region of interest. | 06-17-2010 |
| 20100142800 | METHODS AND SYSTEMS FOR DETECTING DEFECTS ON A RETICLE - Methods and systems for detecting defects on a reticle are provided. One method includes printing a single die reticle in first areas of a wafer using different values of a parameter of a lithography process and at least one second area using a nominal value of the parameter. The method also includes acquiring first images of the first areas and second image(s) of the at least one second area. In addition, the method includes separately comparing the first images acquired for different first areas to at least one of the second image(s). The method further includes detecting defects on the reticle based on first portions of the first images in which variations in the first images compared to the at least one second image are greater than second portions of the first images and the first portions that are common to two or more of the first images. | 06-10-2010 |
| 20100110420 | Inspecting a Workpiece Using Polarization of Scattered Light - A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The system features a variable polarization a polarizing relay assembly arranged to selectively permit the scattered light having a selected polarization orientation to pass along a detector optical axis to a light detection unit in the detection subsystem. They system also features a collector output width varying subsystem for varying the width of an output slit in response to changes in the location of the location scanned on the workpiece. | 05-06-2010 |
| 20100110419 | Front Quartersphere Scattered Light Analysis - A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The optical collection and detection system features, in the front quartersphere, a light channel assembly for collecting light reflected from the surface of the workpiece, and a front collector and wing collectors for collecting light scattered from the surface, to greatly improve the measurement capabilities of the system. The light channel assembly has a switchable edge exclusion mask and a reflected light detection system for improved detection of the reflected light. | 05-06-2010 |
| 20100079147 | INLINE INSPECTION OF PHOTOVOLTAICS FOR ELECTRICAL DEFECTS - A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material. | 04-01-2010 |
| 20100074515 | Defect Detection and Response - To increase inspection throughput, the field of view of an infrared camera can be moved over the sample at a constant velocity. Throughout this moving, a modulation (such as optical or electrical) can be provided to the sample and infrared images can be captured using the infrared camera. Moving the field of view, providing the modulation, and capturing the infrared images can be synchronized. The infrared images can be filtered to generate the time delay lock-in thermography, thereby providing defect identification. In one embodiment, this filtering accounts for the number of pixels of the infrared camera in a scanning direction. For the case of optical modulation, a dark field region can be provided for the field of view throughout the moving, thereby providing an improved signal-to-noise ratio during filtering. Localized defects can be repaired by a laser integrated into the detection system or marked by ink for later repair in the production line. | 03-25-2010 |
| 20100073665 | DEFECT DETECTION USING TIME DELAY LOCK-IN THERMOGRAPHY (LIT) AND DARK FIELD LIT - To increase inspection throughput, the field of view (FOV) of an IR camera can be moved over the sample at a constant velocity. Throughout this moving, a modulation (e.g. optical or electrical) can be provided to the sample and IR images can be captured using the IR camera. Moving the FOV, providing the modulation, and capturing the IR images can be synchronized. The IR images can be filtered to generate the time delay LIT, thereby providing defect identification. In one embodiment, this filtering accounts for the number of pixels of the IR camera in a scanning direction. For the case of optical modulation, a dark field region can be provided for the FOV throughout the moving, thereby providing an improved signal-to-noise ratio (SNR) during filtering. | 03-25-2010 |
| 20100067781 | Process Excursion Detection - A method for analyzing defect information on a substrate, including logically dividing the substrate into zones, and detecting defects on the substrate to produce the defect information. The defect information from the substrate is analyzed on a zone by zone basis to produce defect level classifications for the defects within each zone. The zonal defect level classifications are analyzed according to at least one analysis method. The defect level classifications are preferably selected from a group of defect level classifications that is specified by a recipe. Preferably, the at least one analysis method includes at least one of zonal defect distribution, automatic defect classification, spatial signature analysis, and excursion detection. The defect level classifications preferably include at least one of individual defect, defect cluster, and spatial signature analysis signature. In one embodiment the defect information is logically divided into configurable zones after the defects on the substrate have been detected. | 03-18-2010 |
| 20100060888 | COMPUTER-IMPLEMENTED METHODS FOR INSPECTING AND/OR CLASSIFYING A WAFER - Computer-implemented methods for inspecting and/or classifying a wafer are provided. One computer-implemented includes detecting defects on a wafer using one or more defect detection parameters, which are determined based on a non-spatially localized characteristic of the wafer that is determined using output responsive to light scattered from the wafer generated by an inspection system. Another computer-implemented method includes classifying a wafer based on a combination of a non-spatially localized characteristic of the wafer determined using output responsive to light scattered from the wafer generated by an inspection system and a spatially localized characteristic of the wafer determined using the output. | 03-11-2010 |
| 20100017005 | METROLOGY THROUGH USE OF FEED FORWARD FEED SIDEWAYS AND MEASUREMENT CELL RE-USE - Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively. | 01-21-2010 |
| 20090310136 | Method for Detection of Oversized Sub-Resolution Assist Features - Disclosed are methods and apparatus for inspecting a sub-resolution assist features (SRAF) on a reticle. A test flux measurement for a boundary area that encompasses a width and a length portion of a test SRAF is determined, and at least one reference flux measurement for one or more boundary areas of one or more reference SRAF's is determined. The test flux measurement is compared with the reference flux measurements. The comparison is used to then determine whether the test SRAF is undersized or oversized. If the test SRAF is determined to be oversized, it may then be determined whether the test SRAF is defective based on the comparison using a first threshold | 12-17-2009 |
| 20090292506 | METHODS OF AND APPARATUSES FOR MAINTENANCE, DIAGNOSIS, AND OPTIMIZATION OF PROCESSES - One aspect of the present invention is a method of monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. Another aspect of the present invention is a system configured for monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. One embodiment of the present invention includes a software program that can be implemented in a computer for optimizing the performance of a process tool for processing a workpiece. | 11-26-2009 |
| 20090291513 | OVERLAY MARKS, METHODS OF OVERLAY MARK DESIGN AND METHODS OF OVERLAY MEASUREMENTS - An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern. | 11-26-2009 |
| 20090284734 | MEASURING THE SHAPE AND THICKNESS VARIATION OF A WAFER WITH HIGH SLOPES - In one embodiment, an interferometer system comprises two unequal path interferometers assemble comprising; a first reference flat having a first length L | 11-19-2009 |
| 20090279091 | TARGET DESIGN AND METHODS FOR SCATTEROMETRY OVERLAY DETERMINATION - Disclosed are methods and apparatus for determining overlay error. Radiation that is scattered from each of a plurality of cells of a target is measured. Each cell includes at least a first grating structure formed by a first process and a second grating structure formed by a second process and wherein each cell has a predefined offset between such each cell's first and second grating structures. The first and second grating structures of the different cells have different predefined offsets, and each predefined offset of each cell is selected to cause one or more terms to be cancelled from a periodic function that represents radiation scattered and measured from each cell. The scattered radiation of each cell is represented with a periodic function having a plurality of unknowns parameters, including an unknown overlay error, and the unknown overlay error is determined based on the plurality of periodic functions for the plurality of cells. | 11-12-2009 |
| 20090278044 | In-Situ Differential Spectroscopy - A spectrometer having an electron beam generator for generating an electron beam that is directed at a sample. An electron beam positioner directs the electron beam onto a position of the sample, and thereby produces a secondary emitted stream from the sample, where the secondary emitted stream includes at least one of electrons and x-rays. An secondary emitted stream positioner positions the secondary emitted stream onto a detector array, which receives the secondary emitted stream and detects both the amounts and the received positions of the secondary emitted stream. A modulator modulates the electron beam that is directed onto the sample, and thereby sweeps the electron beam between a first position and a second position on the sample. An extractor is in signal communication with both the modulator and the detector array, and extracts a differential signal that represents a difference between the signals that are received from the first position and the signals that are received from the second position. | 11-12-2009 |
| 20090259605 | HIGH RESOLUTION MONITORING OF CD VARIATIONS - An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry. | 10-15-2009 |
| 20090153824 | MULTIPLE CHUCK SCANNING STAGE - A substrate processing system and method are disclosed. The system may include a stage, first and second chucks mounted on the stage and at least one processing head proximate the stage. The stage and processing head are configured for relative movement for a sufficient distance for the processing head to process both the first and second test substrates. According to the substrate processing method first and second substrates may be disposed on chucks mounted to a stage. The stage and a processing head may move relative to each other in a first direction along a first axis for a first distance that is sufficient for a substrate processing head to scan across the substrates, then move relative to each other along a direction nonparallel to the first direction for a second distance, and then move relative each other opposite the first direction for a distance sufficient for the head to scan across the substrates. The processing head may process the first and second substrates at one or more locations along the first distance and/or third distance. | 06-18-2009 |
| 20090080759 | SYSTEMS AND METHODS FOR CREATING PERSISTENT DATA FOR A WAFER AND FOR USING PERSISTENT DATA FOR INSPECTION-RELATED FUNCTIONS - Various systems and methods for creating persistent data for a wafer and using persistent data for inspection-related functions are provided. One system includes a set of processor nodes coupled to a detector of an inspection system. Each of the processor nodes is configured to receive a portion of image data generated by the detector during scanning of a wafer. The system also includes an array of storage media separately coupled to each of the processor nodes. The processor nodes are configured to send all of the image data or a selected portion of the image data received by the processor nodes to the arrays of storage media such that all of the image data or the selected portion of the image data generated by the detector during the scanning of the wafer is stored in the arrays of the storage media. | 03-26-2009 |
| 20090080065 | Ultra-broadband UV microscope imaging system with wide range zoom capability - An ultra-broadband ultraviolet (UV) catadioptric imaging microscope system with wide-range zoom capability. The microscope system, which comprises a catadioptric lens group and a zooming tube lens group, has high optical resolution in the deep UV wavelengths, continuously adjustable magnification, and a high numerical aperture. The system integrates microscope modules such as objectives, tube lenses and zoom optics to reduce the number of components, and to simplify the system manufacturing process. The preferred embodiment offers excellent image quality across a very broad deep ultraviolet spectral range, combined with an all-refractive zooming tube lens. The zooming tube lens is modified to compensate for higher-order chromatic aberrations that would normally limit performance. | 03-26-2009 |
| 20090067722 | Memory cell and page break inspection - A method of inspecting an array having memory blocks with page breaks disposed between them. The memory array is imaged with a sensor at a magnification such that the memory block size is a whole integer pixel multiple within the sensor. This creates an array image that is divided into sections. Those sections that include at least a portion of the memory blocks are selected into a candidate image. Pixels of the image within a boundary distance of a horizontal single line of pixels are inspected to determine horizontal edges of the memory blocks to an accuracy of a single pixel. Pixels of the image within a boundary distance of a vertical single line of pixels are inspected to determine vertical edges of the memory blocks to an accuracy of a single pixel. An image of a first memory block is compared on a pixel by pixel basis to an image of a second memory block to determine differences between pixel values in the first and second memory blocks, where the images are created at the same magnification using the imaging sensor. The differences are flagged as potential memory block defects. Images of the page breaks are compared to determine differences between pixel values of the images of the page breaks, and the differences are flagged as potential page break defects. | 03-12-2009 |
| 20090067703 | Memory cell and page break inspection - A method of inspecting an array having memory blocks with page breaks disposed between them. The memory array is imaged with a sensor at a magnification such that the memory cell size is a whole integer pixel multiple within the sensor. This creates an array image that is divided into sections. Those sections that include at least a portion of the memory blocks are selected into a candidate image. Pixels of the image within a boundary distance of a horizontal single line of pixels are inspected to determine horizontal edges of the memory blocks to an accuracy of a single pixel. Pixels of the image within a boundary distance of a vertical single line of pixels are inspected to determine vertical edges of the memory blocks to an accuracy of a single pixel. An image of a first memory block is compared on a pixel by pixel basis to an image of a second memory block to determine differences between pixel values in the first and second memory blocks, where the images are created at the same magnification using the imaging sensor. The differences are flagged as potential memory block defects. Images of the page breaks are compared to determine differences between pixel values of the images of the page breaks, and the differences are flagged as potential page break defects. | 03-12-2009 |
| 20090067137 | High Density In-Package Microelectronic Amplifier - A sensor module having a package substrate, a sensor disposed within and electrically connected to the package substrate, an amplifier disposed within and electrically connected to the package substrate, and electrical traces within the package substrate for routing sensor signals from the sensor to the amplifier, and then from the amplifier to external electrical connectors on the package substrate. | 03-12-2009 |
| 20090056441 | PROCESS CONDITION MEASURING DEVICE - An instrument for measuring a parameter comprises a substrate, a plurality of sensors carried by and distributed across a surface of the substrate that individually measure the parameter at different positions, an electronic processing component carried by the substrate surface, electrical conductors extending across the surface connected to the sensors and the electronic processing component, and a cover disposed over the sensors, electronic processing component and conductors. The cover and substrate have similar material properties to a production substrate processed by a substrate processing cell. The instrument has approximately the same thickness and/or flatness as the production substrate. The instrument may be subjected a substrate process and one or more parameters may be measured with the instrument during the process. The behavior of a production wafer in the substrate process may be characterized based on measurements of the parameters made with the one or more sensors. | 03-05-2009 |
| 20090055783 | COMPUTER-IMPLEMENTED METHODS FOR DETERMINING IF ACTUAL DEFECTS ARE POTENTIALLY SYSTEMATIC DEFECTS OR POTENTIALLY RANDOM DEFECTS - Various computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects are provided. One computer-implemented method for determining if actual defects are potentially systematic defects or potentially random defects includes comparing a number of actual defects in a group to a number of randomly generated defects in a group. The actual defects are detected on a wafer. A portion of a design on the wafer proximate a location of each of the actual defects in the group and each of the randomly generated defects in the group is substantially the same. The method also includes determining if the actual defects in the group are potentially systematic defects or potentially random defects based on results of the comparing step. | 02-26-2009 |
| 20090050823 | APPARATUS AND METHODS FOR SCATTERING-BASED SEMICONDUCTOR INSPECTION AND METROLOGY - Disclosed are apparatus and methods for inspecting or measuring one or more semiconductor targets. An incident beam is directed towards a first target as the first target substantially, continuously moves such that the incident beam remains directed at such first target during a first time period in which the first target substantially, continuously moves between a first position and a second position. An output beam scattered from the first target, in response to the incident beam being directed towards the first target during the first time period in which the first target substantially, continuously moves between the first and second positions, is detected such that information is obtained from the detected output beam during the first time period. The first time period is selected so that the information that is collected from the detected output beam during such first time period can be used to determine a characteristic of the first target. | 02-26-2009 |
| 20090041332 | METHODS FOR GENERATING A STANDARD REFERENCE DIE FOR USE IN A DIE TO STANDARD REFERENCE DIE INSPECTION AND METHODS FOR INSPECTING A WAFER - Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step. | 02-12-2009 |
| 20090015821 | SCATTEROMETRY TARGET AND METHOD - Embodiments of the invention include a SCOL targeting groups configured to increase target to target separation and thereby increase target utility to simultaneous exposures to multiple illumination dots and associated inspection methodologies. The embodiments of the invention further relate to apparatus for projection simultaneous illumination dots onto different targets of the same targeting group on a wafer to conduct multiple simultaneous target inspections. Embodiments of the invention further relate to methods used to inspect SCOL targets using simultaneous illumination dots directed onto different targets of the same targeting group to conduct multiple simultaneous target inspections. | 01-15-2009 |
| 20080316442 | FEEDFORWARD/FEEDBACK LITHO PROCESS CONTROL OF STRESS AND OVERLAY - A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables. | 12-25-2008 |
| 20080304057 | SYSTEM AND METHOD FOR CONTROLLING LIGHT SCATTERED FROM A WORKPIECE SURFACE IN A SURFACE INSPECTION SYSTEM - In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target a radiation beam onto a surface; and a scattered radiation collecting assembly that collects radiation scattered from the surface. The radiation targeting assembly generates primary and secondary beams. Data collected from the reflections of the primary and secondary beams may be used in a dynamic range extension routine, alone or in combination with a power attenuation routine. | 12-11-2008 |
| 20080285053 | MEASURING THE SHAPE, THICKNESS VARIATION, AND MATERIAL INHOMOGENEITY OF A WAFER - In one embodiment, an interferometer system comprises an unequal path interferometer assemble comprising; a first reference flat having a first length L | 11-20-2008 |
| 20080278732 | Reduced coherence symmetric grazing incidence differential interferometer - A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a diffraction grating that widens and passes nth order (n>0) wave fronts to the specimen surface and a reflective surface for each channel of the light beam. Two channels and two reflective surfaces are preferably employed, and the wavefronts are combined using a second diffraction grating and passed to a camera system having a desired aspect ratio. The system preferably comprises a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes-means for stitching scans together, providing for smaller and less expensive optical elements. | 11-13-2008 |
| 20080273196 | Confocal wafer inspection system and method - A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask. The offset pattern of the offset fly lens array is chosen such that spots produced can be recombined into a continuous image, and the system utilizes a time delay and integration charge coupled device for rapid sensing along with an autofocus system that measures and cancels topological features of the specimen. | 11-06-2008 |
| 20080266561 | OPTICAL GAIN APPROACH FOR ENHANCEMENT OF OVERLAY AND ALIGNMENT SYSTEMS PERFORMANCE - A resultant image of a grating target may be obtained by dividing an image of the target into first and second portions and optically modifying the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern. The resultant image may be analyzed to determine a shift in the grating target from a shift in the Moiré pattern. Optical alignment apparatus may include a first beam splitter, an image transformation element optically coupled to the first beam splitter, and a second beam splitter. The first beam splitter divides an image of a grating target into first and second portions. The second beam splitter combines the first portion and the second portion. The image transformation element optically modifies the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern. | 10-30-2008 |
| 20080225298 | High throughput brightfield/darkfield water inspection system using advanced optical techniques - The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate. | 09-18-2008 |
| 20080225275 | Detection system for nanometer scale topographic measurements of reflective surfaces - A linear position array detector system is provided which imparts light energy to a surface of a specimen, such as a semiconductor wafer, receives light energy from the specimen surface and monitors deviation of the retro or reflected beam from that expected to map the contours on the specimen surface. The retro beam will, with ideal optical alignment, return along the same path as the incident beam if and only if the surface is normal to the beam. The system has a measurement device or sensor within the path of the retro or reflected beam to measure deviation of the retro beam from expected. The sensor is preferably a multiple element array of detector-diodes aligned in a linear fashion. A unique weighting and summing scheme is provided which increases the mechanical dynamic range while preserving sensitivity. The system further includes a bright field Nomarski Differential Interference Contrast sensor used to split the beam into two beams and for scanning in an orientation orthogonal to the orientation of the optical lever created by the system. | 09-18-2008 |
| 20080204739 | Process Excursion Detection - A method for analyzing defect information on a substrate, including logically dividing the substrate into zones, and detecting defects on the substrate to produce the defect information. The defect information from the substrate is analyzed on a zone by zone basis to produce defect level classifications for the defects within each zone. The zonal defect level classifications are analyzed according to at least one analysis method. The defect level classifications are preferably selected from a group of defect level classifications that is specified by a recipe. Preferably, the at least one analysis method includes at least one of zonal defect distribution, automatic defect classification, spatial signature analysis, and excursion detection. The defect level classifications preferably include at least one of individual defect, defect cluster, and spatial signature analysis signature. In one embodiment the defect information is logically divided into configurable zones after the defects on the substrate have been detected. | 08-28-2008 |
| 20080197277 | METHOD AND INSTRUMENT FOR CHEMICAL DEFECT CHARACTERIZATION IN HIGH VACUUM - A method and the instrument for characterization of the defects on a surface with Auger electron spectroscopy in a high vacuum environment are disclosed. Defects on the surface of a sample may be characterized with Auger electron spectroscopy in a high vacuum environment at a pressure of about 10 | 08-21-2008 |
