K.C. Tech CO., LTD. Patent applications |
Patent application number | Title | Published |
20140366913 | SUBSTRATE CLEANING APPARATUS AND METHOD AND BRUSH ASSEMBLY USED THEREIN - Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate. | 12-18-2014 |
20120309275 | MEMBRANE ASSEMBLY AND CARRIER HEAD HAVING THE MEMBRANE ASSEMBLY - Provided is a membrane assembly of a carrier head in a chemical-mechanical polishing apparatus. The membrane assembly includes a main membrane and a circular ring. The main membrane has a wafer contacting surface in contact with a wafer while a chemical-mechanical polishing process is being performed. The circular ring is disposed at an edge portion of the main membrane and receives an air pressure to downwardly apply the air pressure to the main membrane at the edge portion. | 12-06-2012 |
20100186669 | ATOMIC LAYER DEPOSITION APPARATUS - An atomic deposition apparatus is provided for simultaneously loading/unloading a plurality of substrates. The atomic deposition apparatus which may load/unload the plurality of substrates when transmitting the plurality of substrates to a process module, includes a loading/unloading module for loading/unloading a substrate, a process module including a plurality of process chambers for simultaneously receiving a plurality of substrates and performing a deposition process, each of the plurality of process chambers including a gas spraying unit having an exhaust portion by which an exhaust gas is drawn in from inside the process chamber and the drawn in gas is exhausted above the process chamber, and a transfer module including a transfer robot provided between the loading/unloading module and the process module, the transfer robot being adopted for simultaneously holding the plurality of substrates while transporting the substrate. | 07-29-2010 |
20090193721 | ABRASIVE PARTICLES, METHOD OF MANUFACTURING THE ABRASIVE PARTICLES, AND METHOD OF MANUFACTURING CHEMICAL MECHANICAL POLISHING SLURRY - Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created. | 08-06-2009 |
20090133336 | POLISHING SLURRY, METHOD OF PRODUCING SAME, AND METHOD OF POLISHING SUBSTRATE - Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same. | 05-28-2009 |
20090100765 | POLISHING SLURRY, METHOD OF PRODUCING SAME, AND METHOD OF POLISHING SUBSTRATE - Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same. | 04-23-2009 |
20090039178 | NOZZLE FOR SPRAYING SUBLIMABLE SOLID PARTICLES ENTRAINED IN GAS FOR CLEANING SURFACE - A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO | 02-12-2009 |