KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D Patent applications |
Patent application number | Title | Published |
20160141174 | MOLYBDENUM DISULFIDE FILM FORMATION AND TRANSFER TO A SUBSTRATE - A method is provided for forming an unsupported MoS | 05-19-2016 |
20160112063 | System and method for compressed sensing - A system for compressed sensing comprising: a compressive sampling module configured for providing a CS-sampled signal and a signal reconstruction module configured for receiving and allocating a first plurality of measurement windows comprising a number of samples from the CS-sampled signal, calculating a corresponding first plurality of reconstruction windows based on the first plurality of measurement windows and calculating a first version of a reconstructed signal based on the first plurality of reconstruction windows. The signal reconstruction module is also configured to allocate a second plurality measurement windows overlapping in content with the first plurality of measurement windows, calculate a second plurality of reconstruction windows based on the second plurality of measurement windows, calculate a second version of the reconstructed signal based on the second plurality of reconstructed windows and generate a reconstructed signal based on values from the first version and the second version of the reconstructed signal. | 04-21-2016 |
20160111283 | METHOD FOR DISSOLVING CHALCOGEN ELEMENTS AND METAL CHALCOGENIDES IN NON-HAZARDOUS SOLVENTS - The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate. | 04-21-2016 |
20160110492 | Error Resilient Digital Signal Processing Device - The present disclosure relates to an error resilient scheme for a signal processing device configured to perform iterative processing on clocked input data and to provide output data. The signal processing device includes a computation circuit comprising at least one computation unit circuit configured to perform one computation in each iteration on the clocked input data and to provide or generate processed data, and a selection circuit configured to provide as the output signal either the processed data or the clocked input data, depending on a control signal representative of a set-up timing error detected in an input data. | 04-21-2016 |
20150335257 | Hyperdrive and Neuroprobes for Stimulation Purposes - A kit of parts for electrical stimulation and/or recording of activity of excitable cells in a tissue is described. The kit of parts comprises on the one hand a probe guiding means comprising a plurality of accommodation channels, each channel being adapted for accommodating a probe device having a plurality of stimulation means and/or recording means located on a die. At least one of the plurality of accommodation channels has a curved shape. The kit of parts also comprises at least one probe device for electrical stimulation and/or recording of activity of excitable cells in a tissue, the probe device comprising a plurality of stimulation means and/or recording means located on a die having a thinned and etched surface for providing flexibility to the probe device. | 11-26-2015 |
20150276624 | Quality Assessment of Directed Self-Assembling Method - A method for evaluating the quality of a directed self-assembling method used for generating directed self-assembling patterns. The method for evaluating comprises obtaining at least one set of parameter values for a parameterized set of processing steps and material properties characterizing the directed self-assembling method, thus characterizing a specific directed self-assembling method used for generating a directed self-assembled pattern. The method furthermore comprises obtaining a scattered radiation pattern on the directed self-assembled pattern obtained using the directed self-assembling method characterized by the set of parameter values, thus obtaining scattered radiation pattern results for the directed self-assembled pattern. The method furthermore comprises determining based on the scattered radiation pattern results a qualification score and correlating the qualification score with the set of parameter values. | 10-01-2015 |
20150228497 | Plasma Method for Reducing Post-Lithography Line Width Roughness - The present disclosure is related to a method for treating a photoresist structure on a substrate, the method comprising producing one or more resist structures on a substrate, introducing the substrate in a plasma reactor, and subjecting the substrate to a plasma treatment at a temperature lower than zero degrees Celsius, such as between zero and −110° C. The plasma treatment may be a H | 08-13-2015 |
20150221805 | Implantable SERS Sensing Device and Method to Fabricate - A method for manufacturing a SERS sensing device ( | 08-06-2015 |
20150197742 | Plasma Membrane Isolation - The present invention relates to a population of monodisperse magnetic nanoparticles with a diameter between 1 and 100 nm which are coated with a layer with hydrophilic end groups. Herein the layer with hydrophilic end groups comprises an inner layer of monosaturated and/or monounsaturated fatty acids bound to said nanoparticles and bound to said fatty acids, an outer layer of a phospholipid conjugated to a monomethoxy polyethyleneglycol (PEG) comprising a hydrophilic end group, | 07-16-2015 |
20150179605 | Method for Aligning Micro-Electronic Components - Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid. | 06-25-2015 |
20150118731 | ANTIMICROBIAL AGENTS - The application relates to antimicrobial agents against Gram-negative bacteria, in particular to fusion proteins composed of an enzyme having the activity of degrading the cell wall of Gram-negative bacteria and a peptide stretch fused to the enzyme at the N- or C-terminus, as well as pharmaceutical compositions comprising the same. Moreover, it relates to nucleic acid molecules encoding such a fusion protein, vectors comprising said nucleic acid molecules and host cells comprising either said nucleic acid molecules or said vectors. In addition, it relates to such a fusion protein for use as a medicament, in particular for the treatment or prevention of Gram-negative bacterial infections, as diagnostic means or as cosmetic substance. The application also relates to the treatment or prevention of Gram-negative bacterial contamination of foodstuff, of food processing equipment, of food processing plants, of surfaces coming into contact with foodstuff, of medical devices, of surfaces in hospitals and surgeries. | 04-30-2015 |
20150111335 | Module-Level Processing of Silicon Photovoltaic Cells - A method for module-level processing of photovoltaic cells is provided. The method includes: bonding at least one crystalline silicon photovoltaic substrate to a carrier by means of an adhesive layer, thereby leaving part of the adhesive layer uncovered; after bonding, exposing the uncovered part of the adhesive layer and the at least one crystalline silicon photovoltaic substrate to a plasma; and removing a surface portion of the at least one crystalline photovoltaic substrate. The method may further include performing an annealing step of the adhesive before bonding the at least one photovoltaic substrate to the carrier, and performing an outgassing step of the adhesive after bonding the at least one photovoltaic substrate to the carrier. The method may further include module-level rear side processing of the at least one crystalline silicon photovoltaic substrate to make a photovoltaic module. | 04-23-2015 |
20150105297 | Electrical Polynucleotide Mapping - A micro-fluidic device for mapping a DNA or RNA strand labeled at a plurality of specific sites with labels suitable for generating a detection signal when interacting with a detector element, the device comprising:
| 04-16-2015 |
20150084661 | Method for the Extraction of Recombination Characteristics at Metallized Semiconductor Surfaces - The present disclosure relates to methods for determining recombination characteristics at metallized semiconductor surfaces and of metallized semiconductor junctions, based on photo-conductance decay measurements. Dedicated test structures are used comprising a plurality of metal features in contact with a semiconductor surface at predetermined locations, the metal features being provided in a plurality of zones, each of the plurality of zones having a different metal coverage. The method comprises performing a photo-conductance decay measurement in each of the plurality of zones, thereby determining effective lifetimes for different injection levels as a function of metal coverage; and extracting the recombination characteristics from the determined effective lifetimes. | 03-26-2015 |
20150071940 | SINGLE DOMAIN ANTIBODIES CAPABLE OF MODULATING BACE ACTIVITY - Described are single domain antibodies with a specificity for BACE1. More specifically, described are single variable-domain antibodies derived from camelids that bind to BACE1 and are capable of inhibiting the activity of BACE1. The antibodies can be used for research and medical applications. Specific applications include the use of BACE1-specific antibodies for the treatment of Alzheimer's disease. | 03-12-2015 |
20150028428 | III-V Semiconductor Device with Interfacial Layer - A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same. | 01-29-2015 |
20150024469 | ENDOLYSIN OBPGPLYS - The present invention relates to a polypeptide with an amino acid sequence according to SEQ ID NO: 1 and fragments or derivatives thereof. The present invention further relates to fusion proteins comprising said polypeptide and an additional peptide stretch fused to said polypeptide at the N- or C-terminus. Moreover, the present invention relates to nucleic acid molecules encoding said polypeptide or fusion protein, vectors comprising said nucleic acid molecules and host cells comprising either said nucleic acid molecules or said vectors. In addition, the present invention relates to said polypeptide or fusion protein for use as a medicament, in particular for the treatment or prevention of Gram-negative bacterial infections, as diagnostic means, as cosmetic substance or as sanitizing agent. The present invention also relates to the use of said polypeptide or fusion protein for the treatment or prevention of Gram-negative bacterial contamination of foodstuff, of food processing equipment, of food processing plants, of surfaces coming into contact with foodstuff, of medical devices, of surfaces in hospitals and surgeries. Furthermore, the present invention relates to a pharmaceutical composition comprising said polypeptide or fusion protein. | 01-22-2015 |
20140376816 | Analysis and Sorting of Objects in Flow | 12-25-2014 |
20140374867 | Pinned Photodiode (PPD) Pixel Architecture With Separate Avalanche Region - Described herein is a pinned photodiode pixel architecture having a p-type substrate that is independently biased with respect to a pixel area to provide an avalanche region between an n-type region and a p-type region formed on the substrate. Such a pinned photodiode pixel can be used in imaging sensors that are used in low light level conditions. | 12-25-2014 |
20140356892 | Optical Stimulation Device - In an aspect of the disclosure, a stimulation device includes a probe attached to a first support. The probe includes at least one grating coupler for coupling light into the probe. The device further includes at least one optical source for providing an optical stimulation signal mounted on a second support, and at least one means for detachably attaching the first support to the second support. The position of the at least one optical source is aligned with the position of the at least one grating coupler to allow light emitted from the at least one optical source to be received by the at least one grating coupler. | 12-04-2014 |
20140213586 | VIRAL REPLICATION INHIBITORS - The present invention relates to a series of novel compounds, methods to prevent or treat viral infections in animals by using the novel compounds and to said novel compounds for use as a medicine, more preferably for use as a medicine to treat or prevent viral infections, particularly infections with RNA viruses, more particularly infections with viruses belonging to the family of the Flaviviridae, and yet more particularly infections with the Dengue virus. The present invention furthermore relates to pharmaceutical compositions or combination preparations of the novel compounds, to the compositions or preparations for use as a medicine, more preferably for the prevention or treatment of viral infections. The invention also relates to processes for preparation of the compounds. | 07-31-2014 |
20140121549 | METHOD AND APPARATUS FOR DETERMINING THE MYOCARDIAL INOTROPIC STATE - A method for determining myocardial inotropic state is described. The method involves receiving a value of stretch for different myocardial segments during passive filling, e.g. atrial contraction, and receiving associated values representative of total systolic strain. The method also involves using a relationship between the stretch of different myocardial segments during atrial contraction and the associated values representative for total systolic strain as an index of the myocardial inotropic state. A corresponding system and computer program product also is described. | 05-01-2014 |
20140107458 | Resilient Sensor for Biopotential Measurements - A sensor for biopotential measurement, comprising: an electrical contacting unit for establishing an electrical contact with an animal or human skin, the electrical contacting unit being resilient. The sensor comprises a housing comprising a cavity wherein the electrical contacting unit is partially secured, and means for maintaining said electrical contacting unit in a resiliently deformed state when in contact with said skin. | 04-17-2014 |
20140088088 | ANTI-CANCER ACTIVITY OF NOVEL BICYCLIC HETEROCYCLES - The present invention relates to compound of formula I, II, III, or IV, and/or a pharmaceutical acceptable addition salt thereof and/or a stereoisomer thereof and/or a solvate thereof, Formulas (I), (II), (III) and (IV) wherein R | 03-27-2014 |
20140079921 | Hierarchical Carbon Nano and Micro Structures - Disclosed are methods for fabricating pyrolysed carbon nanostructures. An example method includes providing a substrate, depositing a polymeric material, subjecting the polymeric material to a plasma etching process to form polymeric nanostructures, and pyrolysing the polymeric nanostructures to form carbon nanostructures. The polymeric material comprises either compounds with different plasma etch rates or compounds that can mask a plasma etching process. The plasma etching process may be an oxygen plasma etching process. | 03-20-2014 |
20140070972 | Circuit For Digitizing A Sum Of Signals - A circuit for digitizing a sum of a first input signal and a plurality of second input signals has a passive adder that sums the second input signals and outputs a summation signal and a multi-bit quantizer circuit. The quanitzer circuit compares the summation signal at a first comparator input with a signal at a second comparator input, which is derived from the first input signal and has an appropriate polarity so that the difference between the summation signal and the signal at the second comparator input is indicative of the sum of the first input signal and the plurality of second input signals. The comparator also produces a comparator output signal based on the sum of the first input signal and the plurality of second input signals. The quantizer circuit also has a control logic block for determining a multi-bit representation of the sum from the comparator output signal. | 03-13-2014 |
20140017224 | NOVEL ENDOLYSIN - The present invention relates to a polypeptide with endolysin activity comprising an amino acid sequence according to SEQ ID No. 1 and fragments or derivatives thereof, or fusion proteins derived thereof. Moreover, the present invention relates to nucleic acid molecules encoding said polypeptide or fusion protein, vectors comprising said nucleic acid molecules and host cells comprising either said nucleic acid molecules or said vectors. In addition, the present invention relates to said polypeptide, fragment, derivative or fusion protein for use as a medicament, in particular for the treatment or prevention of Gram-negative bacterial infections, as diagnostic means, as cosmetic substance or as sanitizing agent. The present invention also relates to the use of said polypeptide, fragment, derivative or fusion protein for the treatment or prevention of Gram-negative bacterial contamination of foodstuff, of food processing equipment, of food processing plants, of surfaces coming into contact with foodstuff, of medical devices, of surfaces in hospitals and surgeries. Furthermore, the present invention relates to a pharmaceutical composition comprising said polypeptide, fragment, derivative or fusion protein. | 01-16-2014 |
20130330421 | COMBINATIONS OF THERAPEUTIC AGENTS FOR TREATING MELANOMA - The present disclosure relates to the field of oncology, more particularly to the field of melanoma. Provided are methods of treating melanoma, particularly advanced cutaneous melanoma, with a combination of pharmaceutical agents comprising MDM4-specific antagonists (such as an inhibitor of the MDM4-p53 interaction or a molecule that decreases MDM4 protein stability) or MDM4-MDM2 dual inhibitors (i.e., molecules that disrupt the interactions between p53 and MDM2 and p53 and MDM4) and one or more chemotherapeutic agents such as for example alkylating agents (i.e., Dacarbazine (DITC) or melphalan), alkylating-like agents (i.e., cisplatin or carboplatin) or mitotic inhibitors (taxanes docetaxel or paclitaxel) and PI3K-AKT, B-RAF and MEK inhibitors. Further provided are pharmaceutical formulations of MDM4-specific antagonists (be it an inhibitor of the MDM4-p53 interaction or a molecule that decreases MDM4 protein stability) or MDM4-MDM2 dual inhibitors (i.e., molecules that disrupt the interactions between p53 and MDM2 and p53 and MDM4) and a pharmaceutical formulation of one or more chemotherapeutic agents such as for example alkylating agents (i.e., Dacarbazine (DITC) or melphalan), alkylating-like agents (i.e., cisplatin or carboplatin) or mitotic inhibitors (taxanes docetaxel or paclitaxel) and B-RAF and MEK inhibitors. | 12-12-2013 |
20130313522 | GRAPHENE-BASED SEMICONDUCTOR DEVICE - A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating layer contacting the first graphene layer, the first electrically insulating layer comprising an electrically insulating material, and a substance suitable for creating free charge carriers of a first type in the first graphene layer, the semiconductor device further comprising an electrically insulating region contacting the second graphene layer and suitable for creating free charge carriers of a second type, opposite to the first type, in the second graphene layer. | 11-28-2013 |
20130308860 | Feature Detection in Numeric Data - A method for detecting features in digital numeric data comprises obtaining digital numeric data comprising values corresponding to a plurality of sampling points over a domain space having at least one dimension, computing a plurality of scale-space data comprising filtering said digital numeric data using a filter bank, determining a plurality of feature regions each corresponding to a local extremum in scale and location of the scale-space data; and determining a feature region descriptor for each of said plurality of feature regions. The filter bank is a Cosine Modulated Gaussian filter bank in which the standard deviation parameter of the Gaussian equals | 11-21-2013 |
20130267426 | MICROSATELLITE INSTABILITY MARKERS IN DETECTION OF CANCER - The present application relates to the field of cancer, particularly to mismatch repair (MMR−) deficient tumors. New markers are presented herein that have a high sensitivity to detect whether a tumor is mismatch repair deficient or not. The markers are particularly mutations in microsatellite regions. Accordingly, methods are provided for diagnosing microsatellite instability of a tumor, comprising determining the presence of these markers. Further, kits are provided to detect the presence of these markers (or subsets thereof) in a sample. | 10-10-2013 |
20130231307 | NOVEL ANTIVIRAL ACYCLIC NUCLEOSIDE PHOSPHONATES - Compounds of formula (I) wherein A represents a nucleobase or a derivative thereof, n is equal to 0 or 1 and R′, R″ are carbonic chain, and R | 09-05-2013 |
20130187680 | Complementary Logic Device Comprising Metal-to-Insulator Transition Material - A complementary logic technology is disclosed whereby a logic gate comprises at least two metal-to-insulator transition (MIT) elements and at least two thermoelectric elements, each MIT element being thermally coupled to a corresponding thermoelectric element. In logic gates, each electric signal at an input terminal of a logic gate is first converted into two complementary thermal signals, and these thermal signals in turn determine the status of the output terminal of the logic gate, thereby generating an electrical output signal inverse to the electrical input signal or an output signal which is a Boolean operation on input signals. The parallel connection(s) of thermoelectric elements of the logic gate is used to create corresponding thermal signals for each electrical input signal. The MIT elements of the logic gate are then arranged to, in response to the associated thermal signals, execute a Boolean operation. | 07-25-2013 |
20130187113 | Nonvolatile Memory Device Comprising a Metal-to-Insulator Transition Material - A nonvolatile memory device is disclosed comprising a metal-to-insulator transition material thermally coupled to a Peltier element. During programming, a selected current is flowing through the Peltier element, the level thereof determining whether the temperature of the Peltier element and hence of the thermally coupled metal-to-insulator transition material decreases or increases. In response to this temperature change, the metal-to-insulator transition material will change from one electrical conduction phase to another. The memory device is read by applying current through the metal-to-insulator transition material, the current level being selected to maintain the phase of the metal-to-insulator transition material. | 07-25-2013 |
20130166616 | System and Method for Implementing a Multiplication - The present system and method relate to a system for performing a multiplication. The system is arranged for receiving a first data value, and comprises means for calculating at run time a set of instructions for performing a multiplication using the first data value, storage means for storing the set of instructions calculated at run time, multiplication means arranged for receiving a second data value and at least one instruction from the stored set of instructions and arranged for performing multiplication of the first and the second data values using the at least one instruction. | 06-27-2013 |
20130161750 | N-Channel Laterally Diffused Metal-Oxide-Semiconductor Device - The disclosure relates to an n-channel laterally diffused metal-oxide-semiconductor device comprising an n+ source ( | 06-27-2013 |
20130154112 | Method for Forming Isolation Trenches in Micro-Bump Interconnect Structures and Devices Obtained Thereof - The disclosure is related to a substrate suitable for use in a stack of interconnected substrates, comprising: a base layer having a front side and a back side surface parallel to the plane of the base layer; one or more interconnect structures, each of said structures comprising: a via filled with an electrically conductive material, said via running through the complete thickness of the base layer, thereby forming an electrical connection between said front side and back side surfaces of the base layer, and on the back side surface of the base layer: a landing pad and a micro-bump in electrical connection with said filled via; characterized in that the backside surface of said base layer comprises one or more isolation ring trenches each of said trenches surrounding one or more of said interconnect structures. The disclosure is equally related to methods for producing said substrates and stacks of substrates. | 06-20-2013 |
20130134382 | Selector Device for Memory Applications - The present disclosure is related to a selector device for memory applications. The selector device for selecting a memory element in a memory array comprises an MIT element and a decoupled heater, thermally linked to the MIT element. The MIT element comprises a MIT material component and a barrier component and is switchable from a high to a low resistance state by heating the MIT element above a transition temperature with the decoupled heater. The barrier component is provided to increase the resistance of the MIT element in the high resistance state. | 05-30-2013 |
20130078155 | Method and Device for Thermal Insulation of Micro-Reactors - A micro-fluidic device is described. The micro-fluidic device includes a semiconductor substrate; at least one micro-reactor in the semiconductor substrate; one or more micro-fluidic channels in the semiconductor substrate, connected to the at least one micro-reactor; a cover layer bonded to the semiconductor substrate for sealing the one or more micro-fluidic channels; and at least one through-substrate trench surrounding the at least one micro-reactor and the one or more micro-fluidic channels. | 03-28-2013 |
20130064005 | TUNNEL TRANSISTOR, LOGICAL GATE COMPRISING THE TRANSISTOR, STATIC RANDOM-ACCESS MEMORY USING THE LOGICAL GATE AND METHOD FOR MAKING SUCH A TUNNEL TRANSISTOR - A tunnel transistor is provided comprising a drain, a source and at least a first gate for controlling current between the drain and the source, wherein the first sides of respectively the first and the second gate dielectric material are positioned substantially along and substantially contact respectively the first and the second semiconductor part. | 03-14-2013 |
20130045528 | Microneedle - The electronic device for sensing and/or actuating comprises a device surface to which an biological cell ( | 02-21-2013 |
20130028840 | FABRICATION OF CONDUCTING OPEN NANOSHELLS - A method involving ion milling is demonstrated to fabricate open-nanoshell suspensions and open-nanoshell monolayer structures. Ion milling technology allows the open-nanoshell geometry and upward orientation on substrates to be controlled. Substrates can be fabricated covered with stable and dense open-nanoshell monolayer structures, showing nanoaperture and nanotip geometry with upward orientation, that can be used as substrates for SERS-based biomolecule detection. | 01-31-2013 |
20120295520 | Method for Sharpening Microprobe Tips - The present disclosure is related to a method for sharpening the tip of a microprobe, in particular a neural probe or an array of neuroprobes having a common base portion. | 11-22-2012 |
20120295011 | BANANA PROMOTERS - This invention provides promoter sequences that are useful for modulating transcription of a desired polynucleotide and/or in the construction of recombinant genes for plant transformation to enable expression of foreign or endogenous coding sequences in plants. The promoters are functional in a both monocotyledonous and dicotyledonous plant species and are active in a wide range of vegetative or generative plant organs. The invention also provides a polynucleotide construct comprising a promoter of the invention operably linked to a foreign or endogenous polynucleotide encoding a protein of interest or a transcript capable of modulating expression of a target gene. The invention is further concerned with transformed plant cells, as well as differentiated plants, plant parts, plant tissues or plant seeds containing the construct. | 11-22-2012 |
20120287429 | Waveguide-Integrated Plasmonic Resonator for Integrated SERS Measurements - A resonator structure is disclosed. In some embodiments, the resonator structure may include a metal-insulator-metal waveguide comprising a first metal layer, a second metal layer, and an insulating layer between the first metal layer and the second metal layer, wherein the insulating layer comprises a resonating cavity. The resonator structure may further include a mirror formed in the resonating cavity, wherein the mirror comprises at least one nanoscale metallic reflector positioned at least partly in the insulating layer. | 11-15-2012 |
20120266912 | Method and Apparatus for Cleaning Semiconductor Substrates - The present invention is related to a method and apparatus for cleaning a substrate, in particular a semiconductor substrate such as a silicon wafer. The substrate is placed in a tank containing a cleaning liquid, at an angle with respect to acoustic waves produced in said liquid. The angle corresponds to the angle of transmission, i.e. the angle at which waves are not reflected off the substrate surface. A damping material is provided in the tank, arranged to absorb substantially all waves thus transmitted through the substrate. A significant improvement in terms of cleaning efficiency is obtained by the method of the invention. | 10-25-2012 |
20120258544 | Plasmonic Force Manipulation in Nanostructures | 10-11-2012 |
20120208778 | AVERMECTINS AND MILBEMYCINS FOR THE TREATMENT, PREVENTION OR AMELIORATION OF FLAVIVIRUS INFECTIONS - Avermectin and milbemycin compounds, particularly the substance ivermectin, for preparing an antiviral medicament for the treatment, prevention or amelioration of a Flavivirus infection, such as those caused by YFV (yellow fever virus), DENV (Dengue virus), JEV (Japanese encephalitis virus), TBEV (tick-borne encephalitis virus) or MODV (Modoc virus) are provided. The antiviral compositions of the present invention are suitable for oral administration to a Flavivirus-infected subject or a subject at risk of a Flavivirus infection, such as a human or other mammal. | 08-16-2012 |
20120138928 | Method of Manufacturing Low Resistivity Contacts on n-Type Germanium - Disclosed are methods for manufacturing semiconductor devices and the devices thus obtained. In one embodiment, the method comprises obtaining a semiconductor substrate comprising a germanium region doped with n-type dopants at a first doping level and forming an interfacial silicon layer overlying the germanium region, where the interfacial silicon layer is doped with n-type dopants at a second doping level and has a thickness higher than a critical thickness of silicon on germanium, such that the interfacial layer is at least partially relaxed. The method further includes forming over the interfacial silicon layer a layer of material having an electrical resistivity smaller than 1×10 | 06-07-2012 |
20120136045 | SCREENING FOR COMPOUNDS THAT MODULATE GPR3-MEDIATED BETA-ARRESTIN SIGNALING AND AMYLOID BETA PEPTIDE GENERATION - The invention relates to the field of disorders of the peripheral or central nervous system, in particular, Alzheimer's disease, and the prevention and/or treatment thereof. In particular, the invention relates to the screening of compounds that modulate GPR3 activity and/or beta-arrestin signaling in a mammalian cell and, in particular, compounds that reduce the formation of amyloid beta peptides. The invention also relates to inhibiting agents targeting beta-arrestin signaling and pharmaceutical compositions thereof, and their use in therapeutic applications of those disorders. | 05-31-2012 |
20120115296 | TUNNEL FIELD-EFFECT TRANSISTOR WITH GATED TUNNEL BARRIER - A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to the shorter gate, the total gate capacitance is reduced, which is directly reflected in an improved switching speed of the device. In addition to the advantage of an improved switching speed, the transistor also has a processing advantage (no alignment of the gate with the drain is necessary), as well as a performance improvement (the ambipolar behavior of the TFET is reduced). | 05-10-2012 |
20120107550 | PHOTON INDUCED FORMATION OF METAL COMPRISING ELONGATED NANOSTRUCTURES - The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. The method comprises exposing a metal halide compound surface to a photon comprising ambient to initiate formation of the at least one metal comprising elongated nanostructure. The preferred embodiments also provide metal comprising elongated nanostructures obtained by the method according to preferred embodiments. | 05-03-2012 |
20120092674 | Determination of Electromagnetic Properties of Samples - Disclosed are methods and devices for measuring electromagnetic properties of samples. In one embodiment, a device is disclosed that includes a substantially two-dimensional measurement chamber comprising a reflective surface, where the reflective surface has a substantially elliptical shape that forms a part of an ellipse having a first focal point and a second focal point. The device further includes an input/output port located at the first focal point and a sample holder located at the second focal point. | 04-19-2012 |
20120045879 | TUNNEL EFFECT TRANSISTORS BASED ON ELONGATE MONOCRYSTALLINE NANOSTRUCTURES HAVING A HETEROSTRUCTURE - Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents an elongate monocrystalline nanostructure-based TFET with a heterostructure made of a different semiconducting material (e.g. germanium (Ge)) is used. An elongate monocrystalline nanostructure made of a different semiconducting material is introduced which acts as source (or alternatively drain) region of the TFET. The introduction of the heterosection is such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these elongate monocrystalline nanostructure Si/Ge TFETs resulting in ultra-high on-chip transistor densities. | 02-23-2012 |
20120032234 | Antiphase Domain Boundary-Free III-V Compound Semiconductor Material on Semiconductor Substrate and Method for Manufacturing Thereof - Methods of manufacturing a III-V compound semiconductor material, and the semiconductor material thus manufactured, are disclosed. In one embodiment, the method comprises providing a substrate comprising a first semiconductor material having a {001} orientation and an insulating layer overlaying the first semiconductor material. The insulating layer comprises a recessed region exposing an exposed region of the first semiconductor material. The method further comprises forming a buffer layer overlaying the exposed region that comprises a group IV semiconductor material. The method further comprises thermally annealing the substrate and the buffer layer, thereby roughening the buffer layer to create a rounded, double-stepped surface having a step density and a step height. A product of the step density and the step height is greater than or equal to 0.05 on the surface. The method further comprises at least partially filling the recessed region with a III-V compound semiconductor material overlaying the surface. | 02-09-2012 |
20120007024 | Triplet Excitation Scavenging in Solid-State Organic Materials - The present invention is directed to solid state organic light emitting devices and to methods for triplet excitation scavenging in such devices. More particularly, the present invention relates to a method for substantially reducing a triplet population in a solid state organic material, the method comprising providing molecules exhibiting non-vertical triplet energy transfer in the solid state organic material or at a distance smaller than a triplet exciton diffusion length from the solid state organic material. | 01-12-2012 |
20120002207 | Method for Determining an Analyte in a Sample - In one aspect of the invention, a method or apparatus is described for determining concentration(s) of one or more analytes in a sample using plasmonic excitations. In another aspect, a method relates to designing systems for such concentration determination, wherein metallic nanostructures are used in combination with local electrical detection of such plasmon resonances via a semiconducting photodetector. In certain aspects, the method exploits the coupling of said metallic nanostructure(s) to a semiconducting photodetector, said detector being placed in the “metallic structure's” near field. Surface plasmon excitation can be transduced efficiently into an electrical signal through absorption of light that is evanescently coupled or scattered in a semiconductor volume. This local detection technique allows the construction of sensitive nanoscale bioprobes and arrays thereof. | 01-05-2012 |
20110313270 | NEURAL PROBE WITH MODULAR MICROELECTRODE - The present disclosure relates to a neural probe system comprising: a carrier, at least one planar microelectrode attached to the carrier, the planar microelectrode comprising a set of two or more conductive segments, the set being confined in an area of from 15 μm | 12-22-2011 |
20110312056 | Plasma Membrane Isolation - The present invention relates to a population of monodisperse magnetic nanoparticles with a diameter between 1 and 100 nm which are coated with a layer with hydrophilic end groups. Herein the layer with hydrophilic end groups comprises an inner layer of monosaturated and/or monounsaturated fatty acids bound to said nanoparticles and bound to said fatty acids, an outer layer of a phospholipid conjugated to a monomethoxy polyethyleneglycol (PEG) comprising a hydrophilic end group, | 12-22-2011 |
20110282625 | Time Interval Analyzing System and a Method Thereof - A time interval measuring system is disclosed. In one embodiment, the time interval measuring system includes a plurality of time interval analyzers, each having a resolution that differs from a resolution of at least one other time interval analyzer in the plurality of time interval analyzers. The plurality of time interval analyzers are configured to receive a first event signal representing a first event, receive a second event signal representing a second event, and generate digital first estimates representing a time difference between the first event and the second event. The time interval measuring system further includes a post-processing unit configured to receive the digital first estimates and combine the digital first estimates according to at least one algorithm to generate a digital second estimate representing the time difference between the first event and the second event having higher precision than each of the digital first estimates. | 11-17-2011 |
20110272789 | Nanochannel Device and Method for Manufacturing Thereof - The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device. | 11-10-2011 |
20110269172 | Micro-Electrode Grid Array for Top and Bottom Recording from Samples - A mixed micro-fluidic multi-electrode grid array (MEGA) device ( | 11-03-2011 |
20110257501 | Bio-Hybrid Implant for Connecting a Neural Interface With a Host Nervous System - A bio-hybrid implant suitable for recording and/or stimulating cells, the implant comprising (a) at least one closed insulated chamber ( | 10-20-2011 |
20110253981 | METHOD OF MANUFACTURING A VERTICAL TFET - The present disclosure provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack comprising a layer of channel material with on top thereof a layer of sacrificial material, removing material from the stack so as to form at least one nanowire from the layer of channel material and the layer of sacrificial material, and replacing the sacrificial material in the at least one nanowire by heterojunction material. A method according to embodiments of the present disclosure is advantageous as it enables easy manufacturing of complementary TFETs. | 10-20-2011 |
20110249259 | Single Molecule Optical Spectroscopy in Solid-State Nanopores in a Transmission-Based Approach - Methods and apparatus in the field of single molecule sensing are described, e.g. for molecular analysis of analytes such as molecular analytes, e.g. nucleic acids, proteins, polypeptides, peptides, lipids and polysaccharides. Molecular spectroscopy on a molecule translocating through a solid-state nanopore is described. Optical spectroscopic signals are enhanced by plasmonic field-confinement and antenna effects and probed in transmission by plasmon-enabled transmission of light through an optical channel that overlaps with the physical channel. | 10-13-2011 |
20110224208 | NOVEL INHIBITORS OF FLAVIVIRUS REPLICATION - The present invention relates to a series of Isoquinolone derivatives which are suitable to treat infections with viruses belonging to the family of the Flaviviridae and more preferably infections with Hepatitis C virus (HCV). The present invention also relates to Isoquinolone compounds for use as a medicine for the prevention or treatment of viral infections, preferably infections with viruses belonging to the family of the Flaviviridae. | 09-15-2011 |
20110180943 | Thin Film Wafer Level Package - Anchor designs for thin film packages are disclosed that, in a preferred embodiment are a combination of SiGe-filled trenches and Si-oxide-filled spacing. Depending on the release process, additional manufacturing process steps are performed in order to obtain a desired mechanical strength. For aggressive release processes, additional soft sputter etch and a Ti—TiN interlayer in the anchor region may be added. The ratio of the total SiGe—SiGe anchor area to the SiO | 07-28-2011 |
20110180886 | Method for Manufacturing a Micromachined Device and the Micromachined Device Made Thereof - Methods for manufacturing micromachined devices and the devices obtained are disclosed. In one embodiment, the method comprises providing a structural layer comprising an amorphous semiconductor material, forming a shielding layer on a first portion of the structural layer and leaving exposed a second portion of the structural layer, and annealing the second portion using a first fluence. The method further comprises removing the shielding layer, and annealing the first portion and the second portion using a second fluence that is less than half the first fluence. In an embodiment, the device comprises a substrate layer, an underlying layer formed on the substrate layer, and a sacrificial layer formed on only a portion of the underlying layer. The device further comprises a structural layer that is in contact with the underlying layer and comprises a first region annealed using a first fluence and a second region annealed using a second fluence. | 07-28-2011 |
20110127650 | Method of Manufacturing a Semiconductor Device and Semiconductor Devices Resulting Therefrom - A method is disclosed for manufacturing a semiconductor device, including providing a substrate comprising a main surface with a non flat topography, the surface comprising at least one substantial topography variation, forming a first capping layer over the main surface such that, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluid to pass through. Associated membrane layers, capping layers, and microelectronic devices are also disclosed. | 06-02-2011 |
20110097881 | Method of Forming Mono-Crystalline Germanium or Silicon Germanium - A method is presented for forming mono-crystalline germanium or silicon germanium in a trench. In an embodiment, the method comprises providing a substrate comprising at least one active region that is adjacent to two insulating regions, forming in the active region a trench having a width of less than 100 nm, and forming in the trench a fill layer at a temperature of less than 450° C. that comprises germanium or silicon germanium and substantially fills the trench. The method further comprises heating the fill layer to a temperature sufficient to substantially melt the fill layer and allowing re-crystallization of the substantially melted fill layer, thereby forming mono-crystalline germanium or silicon germanium in the trench. In an embodiment, the method further comprises forming a mono-crystalline germanium or silicon germanium fin by removing at least a portion of the insulating regions. The mono-crystalline fin may be comprised in a fin field-effect-transistor (finFET). | 04-28-2011 |
20110091446 | SINGLE DOMAIN ANTIBODIES CAPABLE OF MODULATING BACE ACTIVITY - The present invention relates to single domain antibodies with a specificity for BACE1. More specifically, the invention provides single variable domain antibodies derived from camelids which bind to BACE1 and are capable of inhibiting the activity of BACE1. Said antibodies can be used for research and medical applications. Specific applications include the use of BACE1 specific antibodies for the treatment of Alzheimer's disease. | 04-21-2011 |
20110060020 | PROCESS FOR RELEASE OF BIOLOGICALLY ACTIVE SPECIES - A process for the release of a biologically active species comprising the steps of:
| 03-10-2011 |
20110032065 | Two Layer Transformer - One aspect of the invention relates to a symmetrical transformer with a stacked coil structure comprising two coils each having at least two turns, said coils being located in two conductive planes. The structure comprises four identical basic elements, each basic element providing a conductive path for part of said coils. The terminals of the transformer are located at opposite sites of the structure so that the structure can be easily connected in a chain. | 02-10-2011 |
20110015866 | Active Interface Device - An active interface device including a transducer or sensor array having a plurality of transducers or sensors arranged to transform a cell activity into an electrical signal, at least one detection unit for detecting the electrical signal(s), at least one recording unit for recording the electrical signal(s), comprising a plurality of recording channels arranged for being routed to the transducers or sensors, and at least one control unit. The control unit is arranged for addressing the transducers or sensors to the detection unit(s), for activating transducers or sensors, and for routing the recording channels to activated transducers or sensors. | 01-20-2011 |
20110006406 | FABRICATION OF POROGEN RESIDUES FREE AND MECHANICALLY ROBUST LOW-K MATERIALS - A method is provided for producing a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) or Chemical Vapor Deposition (CVD) onto a substrate and then first Performing an atomic hydrogen treatment at elevated wafer temperature in the range of 200° C. up to 350° C. to remove all the porogens and then performing a UV assisted thermal curing step. | 01-13-2011 |
20100320606 | Method for Forming MEMS Devices Having Low Contact Resistance and Devices Obtained Thereof - The present disclosure proposes a method for manufacturing in a MEMS device a low-resistance contact between a silicon-germanium layer and a layer contacted by this silicon-germanium layer, such as a CMOS metal layer or another silicon-germanium layer, through an opening in a dielectric layer stack separating both layers. An interlayer is formed in this opening, thereby covering at least the sidewalls of the opening on the exposed surface of the another layer at the bottom of this opening. This interlayer may comprise a TiN layer in contact with the silicon-germanium layer. This interlayer can further comprise a Ti layer in between the TiN layer and the layer to be contacted. In another embodiment this interlayer comprises a TaN layer in contact with the silicon-germanium layer. This interlayer can then further comprise a Ta layer in between the TaN layer and the layer to be contacted. | 12-23-2010 |
20100240605 | NOVEL IMMUNOTHERAPY STRATEGY - The present invention relates to polyacetal-carboxylic acids, more in particular chlorite-oxidized oxyamylose (COAM) for use as a medicine, more in particular for the treatment or prevention of cancer and auto-immune disorders or relates to the use of polyacetal-carboxylic acids for the manufacture of a medicament for the prevention or treatment of cancer or auto-immune disorders. The invention provides also pharmaceutical compositions comprising said polyacetal-carboxylic acids and method of preventing or treating cancer and auto-immune disorders. | 09-23-2010 |
20100234454 | TREATMENT OF CNIDARIA INTOXICATION - The present invention relates to the use of vanilloid receptor (VR) antagonists, and more particularly vanilloid receptor 1 (VR1) antagonist, as analgesics in the treatment and/or prohylaxis of cnidaria envenomations. | 09-16-2010 |
20100210073 | Method for Encapsulating a Device in a Microcavity - Manufacturing a semiconductor device involves forming ( | 08-19-2010 |
20100178810 | Connecting Scheme for Orthogonal Assembly of Microstructures - In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures ( | 07-15-2010 |
20100090251 | SURFACE TREATMENT AND PASSIVATION OF AIGaN/GaN HEMT - In the preferred embodiments, a method to reduce gate leakage and dispersion of group III-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, in combination with cleaning of the in-situ SiN before gate deposition and before deposition of the second passivation layer. | 04-15-2010 |
20090311267 | Inhibition of VWF - GPIb/V/IX interaction and platelet-collagen interaction for prevention and treatment of cerebral attacks - The invention relates generally to an anti-thrombotic treatment of occlusive syndromes in the cerebral vascular system causing cerebral infarct due to stroke or ischemic stroke, which is a major cause of death and permanent disability in industrialized countries. More particularly, the invention relates to a system and method of preventing and treating such occlusive syndromes in the cerebral vascular by inhibiting initial adhesion/attachment of platelets to the endothelium by preventing or inhibiting binding of von Willebrand factor to platelet glycoprotein Ib by administration of a subject in such need anti-glycoprotein Ib monovalent antibodies and/or anti-vWF monovalent antibodies, rather than by blocking the common pathway of platelet aggregation by blockade of platelet aggregation with anti-glycoprotein IIb/IIIa. | 12-17-2009 |
20090243103 | SYNTHESIS OF ZEOLITE CRYSTALS AND FORMATION OF CARBON NANOSTRUCTURES IN PATTERNED STRUCTURES - A method is provided for incorporating zeolite crystals in patterned structures, the zeolite crystals having pores (channels) with an orientation which is defined by the topology of the zeolite crystal type and the geometry of the patterned structure, resulting in pores parallel with the length axis of the patterned structures. The patterned structures may be vias (vertical contacts) and trenches (horizontal lines) in a semiconductor substrate. These zeolite crystals can advantageously be used for dense and aligned nanocarbon growth or in other words growth of carbon nanostructures such as carbon nanotubes (CNT) within the pores of the zeolite structure. The growth of CNT is achieved within the porous structure of the zeolite crystals whereby the pores can be defined as confined spaces (channels) in nanometer dimensions acting as a micro-reactor for CNT growth. A method for growing carbon nanostructures within zeolite crystals is also provided, by adding, after creation of the zeolite crystals, a novel compound within the porous structure of the zeolite crystals whereby said novel compound is acting as a carbon source to create the carbon nanostructures. The improved growth method gives a significantly higher carbon density (yield) compared to state of the art techniques. | 10-01-2009 |
20090203010 | MSMB-gene based diagnosis, staging and prognosis of prostate cancer - This invention relates generally to a method of diagnosis for distinguishing between a benign prostate hyperplasia and a prostate cancer and between a hormone-sensitive and a hormone-refractory prostate cancer condition and specifically to identification of a hypermethylated (on CpG and non-CpG dinucleotides) CpG island in the beta-microseminoprotein (MSMB) regulatory regions surrounding the transcriptional start site of the MSMB gene as a diagnostic indicator of prostate cancer (PrCa) and for distinguishing androgen-refractory from androgen-sensitive prostate cancer. | 08-13-2009 |
20090192205 | PROCESS FOR RELEASE OF BIOLOGICALLY ACTIVE SPECIES - A process for the release of a biologically active species comprising the steps of:
| 07-30-2009 |
20090068768 | QUANTIFICATION OF HYDROPHOBIC AND HYDROPHILIC PROPERTIES OF MATERIALS - A non-destructive and simple analytical method is provided which allows in situ monitoring of plasma damage during the plasma processing such as resist stripping. If a low-k film is damaged during plasma processing, one of the reaction products is water, which is remained adsorbed onto the low-k film (into pores), if the temperature is lower than 100-150 C. A plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules forming electronically excited oxygen atoms is used to detect the adsorbed water. The excited oxygen is detected from optical emission at 777 nm. Therefore, the higher the adsorbed water concentration (higher damage), a more intensive (oxygen) signal is detected. Therefore, intensity of oxygen signal is a measure of plasma damage in the previous strip step. The proposed analytical method can be performed in-situ immediately after plasma processing and most preferred the optical emission of oxygen radicals is monitored during the de-chucking step in the plasma chamber. | 03-12-2009 |
20090065025 | CLEANING OF PLASMA CHAMBER WALLS USING NOBLE GAS CLEANING STEP - An improved reaction chamber cleaning process is provided for removing water residues that makes use of noble-gas plasma reactions. The method is easy applicable and may be combined with standard cleaning procedure. A noble-gas plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules to form electronically excited oxygen atoms is used to remove the adsorbed water. | 03-12-2009 |
20090027681 | Method for determining an analyte in a sample - In one aspect of the invention, a method or apparatus is described for determining concentration(s) of one or more analytes in a sample using plasmonic excitations. In another aspect, a method relates to designing systems for such concentration determination, wherein metallic nanostructures are used in combination with local electrical detection of such plasmon resonances via a semiconducting photodetector. In certain aspects, the method exploits the coupling of said metallic nanostructure(s) to a semiconducting photodetector, said detector being placed in the “metallic structure's” near field. Surface plasmon excitation can be transduced efficiently into an electrical signal through absorption of light that is evanescently coupled or scattered in a semiconductor volume. This local detection technique allows the construction of sensitive nanoscale bioprobes and arrays thereof. | 01-29-2009 |
20090019847 | Stepping Actuator and Method of Fabrication - The current invention provides a stepping actuator, achieving large range up to ±35 μm with low operating voltages of 15V or lower and large output forces of up to ±110 μN. The actuator has an in-plane-angular deflection conversion which allows achieving step sizes varying from few nanometers to few micrometers with a minor change in the design. According to certain embodiments of the invention, the stepping actuator comprises a geometrical structure with a displacement magnification ratio of between 0.15 and 2 at operating voltages of 15V or lower. The present invention also provides a method for forming such stepping actuators. | 01-22-2009 |
20080319298 | CMOS Compatible Microneedle Structures - The present invention provides an electronic device for sensing and/or actuating, the electronic device comprising at least one microneedle ( | 12-25-2008 |
20080294882 | DISTRIBUTED LOOP CONTROLLER ARCHITECTURE FOR MULTI-THREADING IN UNI-THREADED PROCESSORS - In one aspect, a virtually multi-threaded distributed instruction memory hierarchy that can support the execution of multiple incompatible loops in parallel is disclosed. In addition to regular loops, irregular loops with conditional constructs and nested loops can be mapped. The loop buffers are clustered, each loop buffer having its own local controller, and each local controller is responsible for indexing and regulating accesses to its loop buffer. | 11-27-2008 |