| KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D Patent applications |
| Patent application number | Title | Published |
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| 20120136045 | SCREENING FOR COMPOUNDS THAT MODULATE GPR3-MEDIATED BETA-ARRESTIN SIGNALING AND AMYLOID BETA PEPTIDE GENERATION - The invention relates to the field of disorders of the peripheral or central nervous system, in particular, Alzheimer's disease, and the prevention and/or treatment thereof. In particular, the invention relates to the screening of compounds that modulate GPR3 activity and/or beta-arrestin signaling in a mammalian cell and, in particular, compounds that reduce the formation of amyloid beta peptides. The invention also relates to inhibiting agents targeting beta-arrestin signaling and pharmaceutical compositions thereof, and their use in therapeutic applications of those disorders. | 05-31-2012 |
| 20120115296 | TUNNEL FIELD-EFFECT TRANSISTOR WITH GATED TUNNEL BARRIER - A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to the shorter gate, the total gate capacitance is reduced, which is directly reflected in an improved switching speed of the device. In addition to the advantage of an improved switching speed, the transistor also has a processing advantage (no alignment of the gate with the drain is necessary), as well as a performance improvement (the ambipolar behavior of the TFET is reduced). | 05-10-2012 |
| 20120107550 | PHOTON INDUCED FORMATION OF METAL COMPRISING ELONGATED NANOSTRUCTURES - The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. The method comprises exposing a metal halide compound surface to a photon comprising ambient to initiate formation of the at least one metal comprising elongated nanostructure. The preferred embodiments also provide metal comprising elongated nanostructures obtained by the method according to preferred embodiments. | 05-03-2012 |
| 20120092674 | Determination of Electromagnetic Properties of Samples - Disclosed are methods and devices for measuring electromagnetic properties of samples. In one embodiment, a device is disclosed that includes a substantially two-dimensional measurement chamber comprising a reflective surface, where the reflective surface has a substantially elliptical shape that forms a part of an ellipse having a first focal point and a second focal point. The device further includes an input/output port located at the first focal point and a sample holder located at the second focal point. | 04-19-2012 |
| 20120045879 | TUNNEL EFFECT TRANSISTORS BASED ON ELONGATE MONOCRYSTALLINE NANOSTRUCTURES HAVING A HETEROSTRUCTURE - Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents an elongate monocrystalline nanostructure-based TFET with a heterostructure made of a different semiconducting material (e.g. germanium (Ge)) is used. An elongate monocrystalline nanostructure made of a different semiconducting material is introduced which acts as source (or alternatively drain) region of the TFET. The introduction of the heterosection is such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these elongate monocrystalline nanostructure Si/Ge TFETs resulting in ultra-high on-chip transistor densities. | 02-23-2012 |
| 20120032234 | Antiphase Domain Boundary-Free III-V Compound Semiconductor Material on Semiconductor Substrate and Method for Manufacturing Thereof - Methods of manufacturing a III-V compound semiconductor material, and the semiconductor material thus manufactured, are disclosed. In one embodiment, the method comprises providing a substrate comprising a first semiconductor material having a {001} orientation and an insulating layer overlaying the first semiconductor material. The insulating layer comprises a recessed region exposing an exposed region of the first semiconductor material. The method further comprises forming a buffer layer overlaying the exposed region that comprises a group IV semiconductor material. The method further comprises thermally annealing the substrate and the buffer layer, thereby roughening the buffer layer to create a rounded, double-stepped surface having a step density and a step height. A product of the step density and the step height is greater than or equal to 0.05 on the surface. The method further comprises at least partially filling the recessed region with a III-V compound semiconductor material overlaying the surface. | 02-09-2012 |
| 20120007024 | Triplet Excitation Scavenging in Solid-State Organic Materials - The present invention is directed to solid state organic light emitting devices and to methods for triplet excitation scavenging in such devices. More particularly, the present invention relates to a method for substantially reducing a triplet population in a solid state organic material, the method comprising providing molecules exhibiting non-vertical triplet energy transfer in the solid state organic material or at a distance smaller than a triplet exciton diffusion length from the solid state organic material. | 01-12-2012 |
| 20120002207 | Method for Determining an Analyte in a Sample - In one aspect of the invention, a method or apparatus is described for determining concentration(s) of one or more analytes in a sample using plasmonic excitations. In another aspect, a method relates to designing systems for such concentration determination, wherein metallic nanostructures are used in combination with local electrical detection of such plasmon resonances via a semiconducting photodetector. In certain aspects, the method exploits the coupling of said metallic nanostructure(s) to a semiconducting photodetector, said detector being placed in the “metallic structure's” near field. Surface plasmon excitation can be transduced efficiently into an electrical signal through absorption of light that is evanescently coupled or scattered in a semiconductor volume. This local detection technique allows the construction of sensitive nanoscale bioprobes and arrays thereof. | 01-05-2012 |
| 20110313270 | NEURAL PROBE WITH MODULAR MICROELECTRODE - The present disclosure relates to a neural probe system comprising: a carrier, at least one planar microelectrode attached to the carrier, the planar microelectrode comprising a set of two or more conductive segments, the set being confined in an area of from 15 μm | 12-22-2011 |
| 20110312056 | Plasma Membrane Isolation - The present invention relates to a population of monodisperse magnetic nanoparticles with a diameter between 1 and 100 nm which are coated with a layer with hydrophilic end groups. Herein the layer with hydrophilic end groups comprises an inner layer of monosaturated and/or monounsaturated fatty acids bound to said nanoparticles and bound to said fatty acids, an outer layer of a phospholipid conjugated to a monomethoxy polyethyleneglycol (PEG) comprising a hydrophilic end group, | 12-22-2011 |
| 20110282625 | Time Interval Analyzing System and a Method Thereof - A time interval measuring system is disclosed. In one embodiment, the time interval measuring system includes a plurality of time interval analyzers, each having a resolution that differs from a resolution of at least one other time interval analyzer in the plurality of time interval analyzers. The plurality of time interval analyzers are configured to receive a first event signal representing a first event, receive a second event signal representing a second event, and generate digital first estimates representing a time difference between the first event and the second event. The time interval measuring system further includes a post-processing unit configured to receive the digital first estimates and combine the digital first estimates according to at least one algorithm to generate a digital second estimate representing the time difference between the first event and the second event having higher precision than each of the digital first estimates. | 11-17-2011 |
| 20110272789 | Nanochannel Device and Method for Manufacturing Thereof - The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device. | 11-10-2011 |
| 20110269172 | Micro-Electrode Grid Array for Top and Bottom Recording from Samples - A mixed micro-fluidic multi-electrode grid array (MEGA) device ( | 11-03-2011 |
| 20110257501 | Bio-Hybrid Implant for Connecting a Neural Interface With a Host Nervous System - A bio-hybrid implant suitable for recording and/or stimulating cells, the implant comprising (a) at least one closed insulated chamber ( | 10-20-2011 |
| 20110253981 | METHOD OF MANUFACTURING A VERTICAL TFET - The present disclosure provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack comprising a layer of channel material with on top thereof a layer of sacrificial material, removing material from the stack so as to form at least one nanowire from the layer of channel material and the layer of sacrificial material, and replacing the sacrificial material in the at least one nanowire by heterojunction material. A method according to embodiments of the present disclosure is advantageous as it enables easy manufacturing of complementary TFETs. | 10-20-2011 |
| 20110249259 | Single Molecule Optical Spectroscopy in Solid-State Nanopores in a Transmission-Based Approach - Methods and apparatus in the field of single molecule sensing are described, e.g. for molecular analysis of analytes such as molecular analytes, e.g. nucleic acids, proteins, polypeptides, peptides, lipids and polysaccharides. Molecular spectroscopy on a molecule translocating through a solid-state nanopore is described. Optical spectroscopic signals are enhanced by plasmonic field-confinement and antenna effects and probed in transmission by plasmon-enabled transmission of light through an optical channel that overlaps with the physical channel. | 10-13-2011 |
| 20110224208 | NOVEL INHIBITORS OF FLAVIVIRUS REPLICATION - The present invention relates to a series of Isoquinolone derivatives which are suitable to treat infections with viruses belonging to the family of the Flaviviridae and more preferably infections with Hepatitis C virus (HCV). The present invention also relates to Isoquinolone compounds for use as a medicine for the prevention or treatment of viral infections, preferably infections with viruses belonging to the family of the Flaviviridae. | 09-15-2011 |
| 20110180943 | Thin Film Wafer Level Package - Anchor designs for thin film packages are disclosed that, in a preferred embodiment are a combination of SiGe-filled trenches and Si-oxide-filled spacing. Depending on the release process, additional manufacturing process steps are performed in order to obtain a desired mechanical strength. For aggressive release processes, additional soft sputter etch and a Ti—TiN interlayer in the anchor region may be added. The ratio of the total SiGe—SiGe anchor area to the SiO | 07-28-2011 |
| 20110180886 | Method for Manufacturing a Micromachined Device and the Micromachined Device Made Thereof - Methods for manufacturing micromachined devices and the devices obtained are disclosed. In one embodiment, the method comprises providing a structural layer comprising an amorphous semiconductor material, forming a shielding layer on a first portion of the structural layer and leaving exposed a second portion of the structural layer, and annealing the second portion using a first fluence. The method further comprises removing the shielding layer, and annealing the first portion and the second portion using a second fluence that is less than half the first fluence. In an embodiment, the device comprises a substrate layer, an underlying layer formed on the substrate layer, and a sacrificial layer formed on only a portion of the underlying layer. The device further comprises a structural layer that is in contact with the underlying layer and comprises a first region annealed using a first fluence and a second region annealed using a second fluence. | 07-28-2011 |
| 20110127650 | Method of Manufacturing a Semiconductor Device and Semiconductor Devices Resulting Therefrom - A method is disclosed for manufacturing a semiconductor device, including providing a substrate comprising a main surface with a non flat topography, the surface comprising at least one substantial topography variation, forming a first capping layer over the main surface such that, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluid to pass through. Associated membrane layers, capping layers, and microelectronic devices are also disclosed. | 06-02-2011 |
| 20110097881 | Method of Forming Mono-Crystalline Germanium or Silicon Germanium - A method is presented for forming mono-crystalline germanium or silicon germanium in a trench. In an embodiment, the method comprises providing a substrate comprising at least one active region that is adjacent to two insulating regions, forming in the active region a trench having a width of less than 100 nm, and forming in the trench a fill layer at a temperature of less than 450° C. that comprises germanium or silicon germanium and substantially fills the trench. The method further comprises heating the fill layer to a temperature sufficient to substantially melt the fill layer and allowing re-crystallization of the substantially melted fill layer, thereby forming mono-crystalline germanium or silicon germanium in the trench. In an embodiment, the method further comprises forming a mono-crystalline germanium or silicon germanium fin by removing at least a portion of the insulating regions. The mono-crystalline fin may be comprised in a fin field-effect-transistor (finFET). | 04-28-2011 |
| 20110091446 | SINGLE DOMAIN ANTIBODIES CAPABLE OF MODULATING BACE ACTIVITY - The present invention relates to single domain antibodies with a specificity for BACE1. More specifically, the invention provides single variable domain antibodies derived from camelids which bind to BACE1 and are capable of inhibiting the activity of BACE1. Said antibodies can be used for research and medical applications. Specific applications include the use of BACE1 specific antibodies for the treatment of Alzheimer's disease. | 04-21-2011 |
| 20110060020 | PROCESS FOR RELEASE OF BIOLOGICALLY ACTIVE SPECIES - A process for the release of a biologically active species comprising the steps of:
| 03-10-2011 |
| 20110032065 | Two Layer Transformer - One aspect of the invention relates to a symmetrical transformer with a stacked coil structure comprising two coils each having at least two turns, said coils being located in two conductive planes. The structure comprises four identical basic elements, each basic element providing a conductive path for part of said coils. The terminals of the transformer are located at opposite sites of the structure so that the structure can be easily connected in a chain. | 02-10-2011 |
| 20110015866 | Active Interface Device - An active interface device including a transducer or sensor array having a plurality of transducers or sensors arranged to transform a cell activity into an electrical signal, at least one detection unit for detecting the electrical signal(s), at least one recording unit for recording the electrical signal(s), comprising a plurality of recording channels arranged for being routed to the transducers or sensors, and at least one control unit. The control unit is arranged for addressing the transducers or sensors to the detection unit(s), for activating transducers or sensors, and for routing the recording channels to activated transducers or sensors. | 01-20-2011 |
| 20110006406 | FABRICATION OF POROGEN RESIDUES FREE AND MECHANICALLY ROBUST LOW-K MATERIALS - A method is provided for producing a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) or Chemical Vapor Deposition (CVD) onto a substrate and then first Performing an atomic hydrogen treatment at elevated wafer temperature in the range of 200° C. up to 350° C. to remove all the porogens and then performing a UV assisted thermal curing step. | 01-13-2011 |
| 20100320606 | Method for Forming MEMS Devices Having Low Contact Resistance and Devices Obtained Thereof - The present disclosure proposes a method for manufacturing in a MEMS device a low-resistance contact between a silicon-germanium layer and a layer contacted by this silicon-germanium layer, such as a CMOS metal layer or another silicon-germanium layer, through an opening in a dielectric layer stack separating both layers. An interlayer is formed in this opening, thereby covering at least the sidewalls of the opening on the exposed surface of the another layer at the bottom of this opening. This interlayer may comprise a TiN layer in contact with the silicon-germanium layer. This interlayer can further comprise a Ti layer in between the TiN layer and the layer to be contacted. In another embodiment this interlayer comprises a TaN layer in contact with the silicon-germanium layer. This interlayer can then further comprise a Ta layer in between the TaN layer and the layer to be contacted. | 12-23-2010 |
| 20100240605 | NOVEL IMMUNOTHERAPY STRATEGY - The present invention relates to polyacetal-carboxylic acids, more in particular chlorite-oxidized oxyamylose (COAM) for use as a medicine, more in particular for the treatment or prevention of cancer and auto-immune disorders or relates to the use of polyacetal-carboxylic acids for the manufacture of a medicament for the prevention or treatment of cancer or auto-immune disorders. The invention provides also pharmaceutical compositions comprising said polyacetal-carboxylic acids and method of preventing or treating cancer and auto-immune disorders. | 09-23-2010 |
| 20100234454 | TREATMENT OF CNIDARIA INTOXICATION - The present invention relates to the use of vanilloid receptor (VR) antagonists, and more particularly vanilloid receptor 1 (VR1) antagonist, as analgesics in the treatment and/or prohylaxis of cnidaria envenomations. | 09-16-2010 |
| 20100210073 | Method for Encapsulating a Device in a Microcavity - Manufacturing a semiconductor device involves forming ( | 08-19-2010 |
| 20100178810 | Connecting Scheme for Orthogonal Assembly of Microstructures - In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures ( | 07-15-2010 |
| 20100090251 | SURFACE TREATMENT AND PASSIVATION OF AIGaN/GaN HEMT - In the preferred embodiments, a method to reduce gate leakage and dispersion of group III-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, in combination with cleaning of the in-situ SiN before gate deposition and before deposition of the second passivation layer. | 04-15-2010 |
| 20090311267 | Inhibition of VWF - GPIb/V/IX interaction and platelet-collagen interaction for prevention and treatment of cerebral attacks - The invention relates generally to an anti-thrombotic treatment of occlusive syndromes in the cerebral vascular system causing cerebral infarct due to stroke or ischemic stroke, which is a major cause of death and permanent disability in industrialized countries. More particularly, the invention relates to a system and method of preventing and treating such occlusive syndromes in the cerebral vascular by inhibiting initial adhesion/attachment of platelets to the endothelium by preventing or inhibiting binding of von Willebrand factor to platelet glycoprotein Ib by administration of a subject in such need anti-glycoprotein Ib monovalent antibodies and/or anti-vWF monovalent antibodies, rather than by blocking the common pathway of platelet aggregation by blockade of platelet aggregation with anti-glycoprotein IIb/IIIa. | 12-17-2009 |
| 20090243103 | SYNTHESIS OF ZEOLITE CRYSTALS AND FORMATION OF CARBON NANOSTRUCTURES IN PATTERNED STRUCTURES - A method is provided for incorporating zeolite crystals in patterned structures, the zeolite crystals having pores (channels) with an orientation which is defined by the topology of the zeolite crystal type and the geometry of the patterned structure, resulting in pores parallel with the length axis of the patterned structures. The patterned structures may be vias (vertical contacts) and trenches (horizontal lines) in a semiconductor substrate. These zeolite crystals can advantageously be used for dense and aligned nanocarbon growth or in other words growth of carbon nanostructures such as carbon nanotubes (CNT) within the pores of the zeolite structure. The growth of CNT is achieved within the porous structure of the zeolite crystals whereby the pores can be defined as confined spaces (channels) in nanometer dimensions acting as a micro-reactor for CNT growth. A method for growing carbon nanostructures within zeolite crystals is also provided, by adding, after creation of the zeolite crystals, a novel compound within the porous structure of the zeolite crystals whereby said novel compound is acting as a carbon source to create the carbon nanostructures. The improved growth method gives a significantly higher carbon density (yield) compared to state of the art techniques. | 10-01-2009 |
| 20090203010 | MSMB-gene based diagnosis, staging and prognosis of prostate cancer - This invention relates generally to a method of diagnosis for distinguishing between a benign prostate hyperplasia and a prostate cancer and between a hormone-sensitive and a hormone-refractory prostate cancer condition and specifically to identification of a hypermethylated (on CpG and non-CpG dinucleotides) CpG island in the beta-microseminoprotein (MSMB) regulatory regions surrounding the transcriptional start site of the MSMB gene as a diagnostic indicator of prostate cancer (PrCa) and for distinguishing androgen-refractory from androgen-sensitive prostate cancer. | 08-13-2009 |
| 20090192205 | PROCESS FOR RELEASE OF BIOLOGICALLY ACTIVE SPECIES - A process for the release of a biologically active species comprising the steps of:
| 07-30-2009 |
| 20090068768 | QUANTIFICATION OF HYDROPHOBIC AND HYDROPHILIC PROPERTIES OF MATERIALS - A non-destructive and simple analytical method is provided which allows in situ monitoring of plasma damage during the plasma processing such as resist stripping. If a low-k film is damaged during plasma processing, one of the reaction products is water, which is remained adsorbed onto the low-k film (into pores), if the temperature is lower than 100-150 C. A plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules forming electronically excited oxygen atoms is used to detect the adsorbed water. The excited oxygen is detected from optical emission at 777 nm. Therefore, the higher the adsorbed water concentration (higher damage), a more intensive (oxygen) signal is detected. Therefore, intensity of oxygen signal is a measure of plasma damage in the previous strip step. The proposed analytical method can be performed in-situ immediately after plasma processing and most preferred the optical emission of oxygen radicals is monitored during the de-chucking step in the plasma chamber. | 03-12-2009 |
| 20090065025 | CLEANING OF PLASMA CHAMBER WALLS USING NOBLE GAS CLEANING STEP - An improved reaction chamber cleaning process is provided for removing water residues that makes use of noble-gas plasma reactions. The method is easy applicable and may be combined with standard cleaning procedure. A noble-gas plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules to form electronically excited oxygen atoms is used to remove the adsorbed water. | 03-12-2009 |
| 20090027681 | Method for determining an analyte in a sample - In one aspect of the invention, a method or apparatus is described for determining concentration(s) of one or more analytes in a sample using plasmonic excitations. In another aspect, a method relates to designing systems for such concentration determination, wherein metallic nanostructures are used in combination with local electrical detection of such plasmon resonances via a semiconducting photodetector. In certain aspects, the method exploits the coupling of said metallic nanostructure(s) to a semiconducting photodetector, said detector being placed in the “metallic structure's” near field. Surface plasmon excitation can be transduced efficiently into an electrical signal through absorption of light that is evanescently coupled or scattered in a semiconductor volume. This local detection technique allows the construction of sensitive nanoscale bioprobes and arrays thereof. | 01-29-2009 |
| 20090019847 | Stepping Actuator and Method of Fabrication - The current invention provides a stepping actuator, achieving large range up to ±35 μm with low operating voltages of 15V or lower and large output forces of up to ±110 μN. The actuator has an in-plane-angular deflection conversion which allows achieving step sizes varying from few nanometers to few micrometers with a minor change in the design. According to certain embodiments of the invention, the stepping actuator comprises a geometrical structure with a displacement magnification ratio of between 0.15 and 2 at operating voltages of 15V or lower. The present invention also provides a method for forming such stepping actuators. | 01-22-2009 |
| 20080319298 | CMOS Compatible Microneedle Structures - The present invention provides an electronic device for sensing and/or actuating, the electronic device comprising at least one microneedle ( | 12-25-2008 |
| 20080294882 | DISTRIBUTED LOOP CONTROLLER ARCHITECTURE FOR MULTI-THREADING IN UNI-THREADED PROCESSORS - In one aspect, a virtually multi-threaded distributed instruction memory hierarchy that can support the execution of multiple incompatible loops in parallel is disclosed. In addition to regular loops, irregular loops with conditional constructs and nested loops can be mapped. The loop buffers are clustered, each loop buffer having its own local controller, and each local controller is responsible for indexing and regulating accesses to its loop buffer. | 11-27-2008 |
