| Kanto Kagaku Kabushiki Kaisha Patent applications |
| Patent application number | Title | Published |
|---|
| 20120119352 | ELECTROLESS GOLD PLATING SOLUTION FOR FORMING FINE GOLD STRUCTURE, METHOD OF FORMING FINE GOLD STRUCTURE USING SAME, AND FINE GOLD STRUCTURE FORMED USING SAME - An electroless gold plating solution with which one or more openings formed in a resist overlying a substrate can be filled in a short time, the openings having a width on the order of micrometer, in particular, 100 μm or smaller, in terms of the width of the exposed substrate area, and having a height of 3 μm or larger. The electroless gold plating solution contains a deposition accelerator for deposition in fine areas, and a microfine pattern of 100 μm or finer is formed therefrom. | 05-17-2012 |
| 20120065426 | PROCESS FOR PREPARING AMINE COMPOUND - The present invention aims to provide a practical process for preparing amine compounds through a generalized highly-diastereoselective reductive amination reaction. The present invention relates to a process for diastereoselectively preparing an amine compound using a catalyst employed in a reductive amination reaction, comprising a specific organometallic compound represented by the following general formula (1): | 03-15-2012 |
| 20120031764 | MICROCRYSTALLINE-TO-AMORPHOUS GOLD ALLOY AND PLATED FILM, AND PLATING SOLUTION FOR THOSE, AND PLATED FILM FORMATION METHOD - Disclosed is a microcrystalline-to-amorphous gold alloy-plated film having excellent electrical properties and excellent mechanical properties. Physical properties including both the advantageous properties of a crystalline structure and the advantageous properties of an amorphous structure can be obtained by allowing a microcrystalline phase and an amorphous phase to exist in a mixed state at a specific ratio. The average particle diameter of the microcrystals is 30 nm or smaller, the volume fraction of the microcrystals is 10 to 90%, the knoop hardness is Hk 180 or more, the specific resistivity is 200 μΩ-cm or less. In the film, hardness and abrasion resistance can be improved while maintaining a good specific resistivity value and chemical stability both inherent to gold at practically insignificant levels. Therefore, the film is useful as a material for connecting an electric or electronic component such as a connector and a relay. | 02-09-2012 |
| 20110319671 | PROCESS FOR PRODUCING OPTICALLY ACTIVE ALIPHATIC FLUOROALCOHOL - The problem to be resolved by the present invention is to provide a method for efficiently synthesizing optically active lower aliphatic alcohols that have difficulty in separation from organic solvents, without using a special reactor. | 12-29-2011 |
| 20110306743 | NOVEL CROSSLINKED HEXAARYL BISIMIDAZOLE COMPOUND AND DERIVATIVE THEREOF, METHOD FOR PRODUCING THE COMPOUND AND PRECURSOR COMPOUND TO BE USED IN THE PRODUCTION METHOD - Provided is a crosslinked hexaaryl bisimidazole compound which can achieve photochromic characteristics, i.e., visually showing decoloring simultaneously with the stop of light irradiation and enables precise control of color tone, density and so on in coloring. Also provided are a method for producing the aforesaid compound whereby the degrees of freedom in molecular design and synthesis can be increased, and a precursor compound to be used in the production method. | 12-15-2011 |
| 20110297873 | ETCHING SOLUTION COMPOSITIONS FOR METAL LAMINATE FILMS - Disclosed are etching solution compositions that comprise fluorine compounds and iron ions, which are used for bulk etching of metal laminate films wherein a layer comprising aluminum or an aluminum alloy is laminated on top and a layer comprising titanium or a titanium alloy on bottom, and an etching method using said etching solution compositions. | 12-08-2011 |
| 20110282077 | PROCESS FOR PRODUCING OPTICALLY ACTIVE ALCOHOL - The object of the present invention is to solve the problems in the prior arts, and to find more improved reaction conditions for suppressing the racemization of the product and obtaining an optically active alcohol at a high optical purity. The inventors achieved to solve the above problems by using a solvent system that is capable of resolving both an asymmetric catalyst and a formate salt, allowing the hydrogen source and the asymmetric catalyst to be present in the same phase. | 11-17-2011 |
| 20100261924 | ASYMMETRIC CATALYST AND PROCESS FOR PREPARING OPTICALLY ACTIVE ALCOHOLS USING THE SAME - The present invention provides an organic metal compound, a ligand, an asymmetric catalyst, and a process for preparing optically-active alcohols using the asymmetric catalyst. The organic metal compound of the present invention is expressed by the following general formula (1): | 10-14-2010 |
| 20100234596 | NOVEL ORGANIC METAL COMPLEX AND PROCESS FOR PREPARING AMINE COMPOUND - [Problem] The present invention aims to provide a novel organometallic compound that can be used as a general-use highly active catalyst with superior selectivity for functional groups. | 09-16-2010 |
| 20100090158 | ALKALINE AQUEOUS SOLUTION COMPOSITION FOR TREATING A SUBSTRATE - An aqueous solution of ammonia, tetramethylammonium hydroxide and sodium hydroxide, etc. has been used as a cleaning liquid and an etching liquid of a semiconductor substrate and a glass substrate. However, the metal impurities in the alkali components are adsorbed onto the substrate surface during treatment, so that a process for removing the adsorbed metal impurities is necessary as the next process. In addition, in the case of the cleaning liquid, though it is effective in the removal of fine particles, the metal impurities cannot be cleaned, so that it is necessary to carry out acid cleaning, which makes the process complicated. According to the present invention, the alkaline aqueous solution for treating a substrate wherein an alkali component and a specific chelating agent are combined prevents adsorption of metal impurities onto the substrate, and further cleans and removes the metals adhered to the substrate. If necessary, it is also possible to add a metal anticorrosive and a surfactant to suppress corrosion of the metal materials, or enhance affinity to the substrate and ability for removing fine particles. | 04-15-2010 |
| 20100086882 | POSITIVE RESIST PROCESSING LIQUID COMPOSITION AND LIQUID DEVELOPER - Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). | 04-08-2010 |
| 20100069683 | Organic metal compound and process for preparing optically-active alcohols using the same - The present invention provides an asymmetric reduction catalyst effective in preparing optically-active alcohol compounds having various functional groups, and a process for preparing optically-active alcohol compounds using said asymmetric reduction catalyst. | 03-18-2010 |
| 20100048443 | LIQUID COMPOSITION FOR REMOVING PHOTORESIST RESIDUE AND POLYMER RESIDUE - Provided is a liquid composition for, at a low temperature in a short time, removing a photoresist residue and a polymer residue generated in a semiconductor circuit element manufacturing process A residue removing method using such composition is also provided. The composition removes the photoresist residue and/or the polymer residue generated in the manufacturing process of a semiconductor circuit element having a metal wiring. The composition includes a fluorine compound of 0.5-3.0 mass % and water not over 30 mass %, and has a pH of 4 or less. | 02-25-2010 |
| 20100000865 | METHOD AND REAGENT FOR PROTEIN ANALYSIS - A convenient, rapid, and highly sensitive protein detection method is provided. According to the present invention, an easily water-soluble compound of formula I is provided: | 01-07-2010 |
| 20090286708 | CLEANING LIQUID COMPOSITION FOR A SEMICONDUCTOR SUBSTRATE - It is an object of the present invention to provide a liquid composition for cleaning a semiconductor substrate capable of removing metal impurities on the substrate surface without corroding a copper wiring in the manufacturing process of a semiconductor circuit element. | 11-19-2009 |
| 20090124091 | ETCHING SOLUTION COMPOSITION FOR METAL FILMS - The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudation trace. Said problems have been solved by the present invention, which is an etching solution composition for etching metal films containing one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof. | 05-14-2009 |
| 20090062573 | Organic metal compound and process for preparing optically-active alcohols using the same - The present invention provides an asymmetric reduction catalyst effective in preparing optically-active alcohol compounds having various functional groups, and a process for preparing optically-active alcohol compounds using said asymmetric reduction catalyst. | 03-05-2009 |
| 20090001315 | ALKALINE AQUEOUS SOLUTION COMPOSITION USED FOR WASHING OR ETCHING SUBSTRATES - As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process for removing the adsorbed metal impurities is required. In addition, when a washing liquid is used, it cannot wash off metal impurities; therefore an acid washing process is required. The present invention provides an aqueous solution composition, which is an alkaline aqueous solution but is able to prevent adsorption of metal impurities, which also has cleaning capability. | 01-01-2009 |
| 20080214002 | Cleaning solution and manufacturing method for semiconductor device - A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %. | 09-04-2008 |
