| JX NIPPON MINING & METALS CORPORATION Patent applications |
| Patent application number | Title | Published |
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| 20120135266 | Copper Foil and Method for Producing Same - A copper foil comprising a plated layer containing nickel and zinc on a copper foil made of an electrolytic copper foil or a rolled copper foil, and a chromium plated layer on the plated layer containing nickel and zinc, wherein the zinc in the plated layer containing nickel and zinc is made of zinc oxide and metal zinc, and the ratio of metal zinc in the zinc oxide and metal zinc is 50% or less. This invention relates to a copper foil for a flexible printed board formed with a polyimide-based resin layer and in particular provides a copper foil having superior adhesive strength between the copper foil and the polyimide-based resin layer, having acid resistance and tin plating solution resistance, having high peel strength, comprising favorable etching properties and gloss level, and suitable for use in a flexible printed board capable of achieving fine patterning of wiring. | 05-31-2012 |
| 20120135160 | Method for Production of Non-Adhesive-Type Flexible Laminate - A non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer fanned on the tie-coat layer is provided. A ratio (T/Rz) of a tie-coat layer thickness (T) to a 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is made to be 2 or more. This improves initial adhesion, which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), and also increases adhesion of the laminate after heat aging (i.e., after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere). A method of manufacturing the laminate is also provided. | 05-31-2012 |
| 20120118734 | Ferromagnetic Material Sputtering Target - A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device. | 05-17-2012 |
| 20120107637 | Copper Foil for Semiconductor Package Substrate and Substrate for Semiconductor Package - A copper foil for a semiconductor package substrate comprising a chromate treatment layer or a coating layer made of zinc or zinc oxide and chromium oxide formed on a roughened surface of a copper foil to serve as an adherend surface with resin, and a silane coupling agent layer. With this copper foil for a semiconductor package substrate, the amount of Cr in the chromate coating layer is 25 to 150 μg/dm | 05-03-2012 |
| 20120104502 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - Disclosed is a method of producing a semiconductor device, able to form a source/drain of a Schottky junction (FET) with simple steps and able to improve the device characteristics. A gate is formed on an element region defined in a silicon substrate layer by element isolation regions (first step), the silicon substrate is etched by self-alignment using the gate and the element isolation regions as masks (second step), and an insulating film is formed on the side surfaces of the gate (third step). Then, a metal film acting as the source/drain is selectively formed on the etching region of the silicon substrate by electroless plating (fourth step). | 05-03-2012 |
| 20120103804 | Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact - An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering. | 05-03-2012 |
| 20120103229 | AQUEOUS SOLUTION CONTAINING DIVALENT IRON IONS - An object of the present invention is to provide an aqueous solution containing divalent iron ions having improved storage stability such that oxidation over time of divalent iron ions in the aqueous solution containing divalent iron ions to trivalent iron ions is suppressed and occurrence of the precipitation of iron (III) hydroxide is prevented for long periods. The present invention relates to an aqueous solution containing divalent iron ions having improved storage stability characterized in that it comprises divalent iron ions and a hydroxylamine salt as a reducing agent and has a pH of 3.0 or lower. The pH is preferably 2.2 or lower and more preferably 1.2 or lower. | 05-03-2012 |
| 20120098131 | Nickel Silicide Film - A nickel alloy sputtering target and a nickel silicide film formed with such a target are provided and enable the formation of a thermally stable silicide (NiSi) film, scarcely causing the aggregation of films or excessive formation of silicides, having low generation of particles upon forming the sputtered film, having favorable uniformity and superior plastic workability to the target, and which is particularly effective for the manufacture of a gate electrode material (thin film). The nickel alloy sputtering target contains 22 to 46 wt % of platinum and 5 to 100 wtppm of one or more components selected from iridium, palladium, and ruthenium, and remainder is nickel and inevitable impurities. | 04-26-2012 |
| 20120097535 | Sputtering Target of Ferromagnetic Material with Low Generation of Particles - A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device. | 04-26-2012 |
| 20120097530 | Target of Sintered Compact, and Method of Producing the Sintered Compact - Provided is a target of sintered compact essentially consisting of an element of (A), an element of (B) and an element of (C) below, wherein the thermal conductivity is 2.5 W/mK or more and the oxygen concentration is 5000 ppm or more:
| 04-26-2012 |
| 20120094114 | Metal Foil with Electric Resistance Film and Production Method Thereof - A metal foil comprising an electric resistance film in which the metal foil is made of copper or copper alloy, the surface roughness of at least one surface thereof is set to a 10-point average roughness Rz of 6.0 μm to 8.0 μm, and an electric resistance film is formed on that surface, wherein the peel strength of the electric resistance film is 0.60 kN/m or more, and variation of the resistance value of the electric resistance film is ±10% or less. Provided is a copper foil with an electric resistance film in which an electric resistance film is formed on the copper foil to enable the resistor to be built into the substrate, the adhesiveness thereof to a resin substrate is ensured, and variation of the resistance value of the electric resistance film is reduced. | 04-19-2012 |
| 20120073964 | Titanium Target for Sputtering - The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition. | 03-29-2012 |
| 20120045380 | Method of Storing Lanthanum Oxide Target, and Vacuum-Sealed Lanthanum Oxide Target - A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm | 02-23-2012 |
| 20120043509 | Indium Oxide Sintered Compact, Indium Oxide Transparent Conductive Film, and Manufacturing Method of Indium Oxide Transparent Conductive Film - An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film. | 02-23-2012 |
| 20120037501 | Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of molybdenum as an essential component, and having a purity of 99.998% or more excluding molybdenum and gas components. Additionally provided is a tantalum sputtering target according to the above further containing 0 to 100 mass ppm of niobium, excluding 0 mass ppm thereof, and having a purity of 99.998% or more excluding molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target that has a uniform and fine structure and which yields stable plasma and superior film evenness, in other words, uniformity. | 02-16-2012 |
| 20120034525 | Positive Electrode Active Material For Lithium Ion Battery - Disclosed is a positive electrode active material that provides an improved capacity density. Specifically disclosed is a positive electrode active material for a lithium ion battery with a layered structure represented by Li | 02-09-2012 |
| 20120034475 | Metal-Coated Polyimide Resin Substrate with Excellent Thermal Aging Resistance Properties - [Object] To provide a metal-coated polyimide resin substrate that does not deteriorate the initial adhesion between the metal-coated polyimide resin film and the metal layer and has high adhesion after aging at 150° C. for 168 hours. | 02-09-2012 |
| 20120031756 | Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity). | 02-09-2012 |
| 20120031533 | Cu-Co-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME - The present invention provides Cu—Co—Si system alloys that have desirable mechanical and electrical characteristics as a copper alloy for electronic materials, and have uniform mechanical characteristics. The copper alloys for electronic materials contain 0.5 to 4.0 mass % Co, 0.1 to 1.2 mass % Si, and the balance being Cu and unavoidable impurities. An average grain size is 15 to 30 μm and an average difference between maximum grain size and minimum grain size in every observation field of 0.5 mm | 02-09-2012 |
| 20120024192 | Sputtering Target of Sintered Ti-Nb Based Oxide, Thin Film of Ti-Nb Based Oxide, and Method of Producing the Thin Film - Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter. | 02-02-2012 |
| 20120018050 | STEEL FOR SURFACE LAYER HARDENING TREATMENT, SURFACE LAYER-HARDENED STEEL PART, AND METHOD OF MANUFACTURING THE SAME - In the steel for a surface layer hardening which is treated with carburizing in a temperature range of 800° C. to 900° C., chemical composition thereof contains, by mass %, C: 0.10% to 0.60%, Si: 0.01% to 2.50%, Mn: 0.20% to 2.00%, S: 0.0001% to 0.10%, Cr: 2.00% to 5.00%, Al: 0.001% to 0.50%, N: 0.0020% to 0.020%, P: 0.001% to 0.050%, and O: 0.0001% to 0.0030%; the remaining portion thereof includes Fe and unavoidable impurities; and the total amount of Cr, Si, and Mn satisfies, by mass %, 2.0≦Cr+Si+Mn≦8.0. | 01-26-2012 |
| 20120012463 | Method of Roughening Rolled Copper or Copper Alloy Foil - A rolled copper or copper alloy foil having a roughened surface formed of fine copper particles is obtained by subjecting a rolled foil to roughening plating with a plating bath containing copper sulfate (Cu equivalent of 1 to 50 g/L), 1 to 150 g/L of sulfuric acid, and one or more additives selected among sodium octyl sulfate, sodium decyl sulfate, and sodium dodecyl sulfate under the conditions of temperature of 20 to 50° C. and current density of 10 to 100 A/dm | 01-19-2012 |
| 20120012367 | Flexible Laminate and Flexible Electronic Circuit Board Formed by using the same - An adhesive-free flexible laminate formed from a polyimide film in which at least one surface has been plasma treated, a tie-coat layer formed on the surface of the plasma-treated polyimide film, a metal seed layer made of either copper or copper alloy and which is formed on the tie-coat layer, and a metal conductive layer made of either copper or copper alloy and which is formed on the metal seed layer, wherein the atomic percent of Cu inclusion in the tie-coat layer is 0.5 at % or less. Consequently, provided is a flexible laminate capable of effectively inhibiting the deterioration of the peel strength upon producing a flexible laminate (in particular a two-layer metalizing laminate). | 01-19-2012 |
| 20120009496 | FUEL CELL SEPARATOR MATERIAL, FUEL CELL SEPARATOR USING SAME, FUEL CELL STACK, AND METHOD FOR PRODUCING FUEL CELL SEPARATOR MATERIAL - A fuel cell separator material, comprising an alloy layer 6 containing Au and a first component containing Al, Cr, Co, Ni, Cu, Mo, Sn or Bi, or an Au single layer | 01-12-2012 |
| 20110318602 | Metal-Coated Polyimide Resin Substrate with Excellent Thermal Aging Resistance Properties - [Object] To provide a metal-coated polyimide resin substrate that does not deteriorate the initial adhesion between the metal-coated polyimide resin film and the metal layer and has high adhesion after aging at 150° C. for 168 hours. | 12-29-2011 |
| 20110311834 | TWO-LAYER FLEXIBLE SUBSTRATE, AND COPPER ELECTROLYTIC SOLUTION FOR PRODUCING SAME - It is an object of the invention to provide a two-layer flexible substrate that excels in folding endurance and free from occurrence of Kirkendall voids or the like even when lead portions of COF are plated with tin and heat treatment is performed. The present invention is directed to a two-layer flexible substrate in which a copper layer is provided on one or both faces of an insulating film by using a copper electrolytic solution, wherein an average size of copper crystal grains constituting the copper layer is equal to or greater than 1 μm and equal to or less than a thickness of the copper layer, and a ratio of peak intensity of (200) to a sum total of intensities of six principal peaks {[peak intensity of (200)]/[sum total of peak intensities of (111), (200), (220), (311), (400), (331)]} in the X-ray diffraction of the copper layer is equal to or greater than 0.4. The above copper electrolytic solution for forming the copper layer contains a chloride ion and one or more of thiourea, thiourea derivatives, and thiosulfuric acid as additives. | 12-22-2011 |
| 20110308940 | Lanthanum Target for Sputtering - Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 μm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same. | 12-22-2011 |
| 20110300401 | Rolled Copper Foil or Electrolytic Copper Foil for Electronic Circuit, and Method of Forming Electronic Circuit using same - A rolled copper foil or electrolytic copper foil for an electronic circuit to be used for forming a circuit by etching, characterized in comprising a layer of metal of one or more types among a platinum group, gold and silver with an etching rate that is lower than the copper formed on an etching surface side of the rolled copper foil or the electrolytic copper foil, or alternatively comprising a layer of an alloy having the above-described metal as its main component. This invention aims to achieve the following upon forming a circuit by etching a copper foil of a copper clad laminate; specifically, to prevent sagging caused by the etching; to form a uniform circuit of the intended circuit width; to shorten the time of forming a circuit by etching as much as possible; to improve the etching properties in pattern etching; and to prevent the occurrence of short circuits and defects in the circuit width. | 12-08-2011 |
| 20110300017 | Method for Manufacturing High-Purity Erbium, High-Purity Erbium, Sputtering Target Composed of High-Purity Erbium, and Metal Gate Film having High-Purity Erbium as Main Component - Provided are a method for manufacturing high-purity erbium, wherein crude erbium oxide is mixed with reducing metal, erbium is reduced and distilled by heating the mixture in a vacuum, and the distillate is melted in an inert atmosphere to obtain high-purity erbium; and high-purity erbium, wherein the purity excluding rare-earth elements and gas components is 4 N or higher and the oxygen content is 200 wtppm or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to be refined in a molten metal state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target composed of high-purity erbium, and a metal gate film having high-purity erbium as a main component. | 12-08-2011 |
| 20110297641 | Rolled Copper Foil or Electrolytic Copper Foil for Electronic Circuit, and Method of Forming Electronic Circuit using same - Provided is a rolled copper foil or electrolytic copper foil for an electronic circuit to be used for forming a circuit by etching, wherein the copper foil comprises a nickel or nickel alloy layer with a lower etching rate than copper formed on an etching side of the rolled copper foil or electrolytic copper foil, and a heat resistance layer composed of zinc or zinc alloy or its oxide formed on the nickel or nickel alloy layer. This invention aims to prevent sagging caused by the etching, to form a uniform circuit having the intended circuit width, and to shorten the time of forming a circuit by etching as much as possible, when forming a circuit by etching a copper foil of the copper-clad laminate; and also aims to make the thickness of the nickel or nickel alloy layer as thin as possible, to inhibit oxidation when exposed to heat, to prevent tarnish (discoloration) known as “YAKS”, to improve the etching properties in pattern etching, and to prevent the occurrence of short circuits and defects in the circuit width. | 12-08-2011 |
| 20110293960 | Rolled Copper Foil or Electrolytic Copper Foil for Electronic Circuit, and Method of Forming Electronic Circuit using same - Provided is a rolled copper foil or electrolytic copper foil for an electronic circuit to be used for forming a circuit by etching, wherein the copper foil comprises a heat resistance layer composed of zinc or zinc alloy or its oxide formed on an etching side of the rolled copper foil or electrolytic copper foil, and a layer of nickel or nickel alloy, which is a metal or alloy with a lower etching rate than copper, formed on the heat resistance layer. This invention aims to prevent sagging caused by the etching, to form a uniform circuit having the intended circuit width, and to shorten the time of forming a circuit by etching as much as possible, when forming a circuit by etching a copper foil of the copper-clad laminate; and also aims to make the thickness of the nickel or nickel alloy layer as thin as possible, to inhibit oxidation when exposed to heat, to prevent tarnish (discoloration) known as “YAKE”, to improve the etching properties in pattern etching, and to prevent the occurrence of short circuits and defects in the circuit width. | 12-01-2011 |
| 20110290644 | Lanthanum Target for Sputtering - Provided are a lanthanum target for sputtering which has a Vickers hardness of 60 or more and no spotty macro patterns on the surface, and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering that has no spotty macro patterns on the surface, and a method of producing the same. | 12-01-2011 |
| 20110284496 | Method of Forming Electronic Circuit - Provided is a method of forming an electronic circuit, wherein a nickel or nickel alloy layer is formed on an etching side of a rolled copper foil or an electrolytic copper foil, the rolled copper foil or the electrolytic copper foil is bonded to a resin substrate to obtain a copper-clad laminate, a resist pattern for forming a circuit is subsequently applied on the copper foil, any unwanted portion of the copper foil and the nickel or nickel alloy layer of the copper-clad laminate other than the portion to which the resist pattern was applied is removed using an etching solution of an aqueous ferric chloride, the resist is further removed, and soft etching is additionally performed in order to remove the remnant nickel or nickel alloy layer and thereby form a circuit in which the space between copper circuit lines is of a width that is double or more from the thickness of copper. This invention aims to form a circuit with a uniform circuit width, improve the etching properties in pattern etching, and prevent the occurrence of short circuits and defects in the circuit width. | 11-24-2011 |
| 20110284373 | Inorganic-Particle-Dispersed Sputtering Target - Provided is an inorganic-particle-dispersed sputtering target in which inorganic particles are dispersed in a Co base material, wherein the inorganic particles have an electric resistivity of 1×10 | 11-24-2011 |
| 20110278511 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputternig Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component, wherein the thin film includes titanium, oxygen and copper, content of Ti is 29.0 at % or higher and 34.0 at % or less and content of Cu is 0.003 at % or higher and 7.7 at % or less with remainder being oxygen and unavoidable impurities, and ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. This invention aims to obtain a thin film comprising titanium oxide as its main component with a high refractive index and low extinction coefficient and a sintered compact sputtering target comprising titanium oxide as its main component which is suitable for producing the foregoing thin film, to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 11-17-2011 |
| 20110266145 | Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity). | 11-03-2011 |
| 20110262764 | Copper Foil for Printed Circuit - Provided is a copper foil for a printed circuit with an electrodeposited ternary-alloy layer composed of copper, cobalt and nickel formed on a surface of the copper foil, wherein the electrodeposited layer comprises dendritic particles grown on the copper foil surface, and the entire surface of the copper foil is covered with particles having an area as seen from above the copper foil surface of 0.1 to 0.5 μm | 10-27-2011 |
| 20110262722 | Method of Producing Laminated Body, and Laminated Body - Provided is a method of producing a laminated body, wherein, while winding off a carrier A from a bobbin, an adhesive is applied to both facing ends thereof, a metal foil B is laid on and bonded to a side to which the adhesive was applied while being wound off from a bobbin, the obtained laminated body is subsequently cut, the cut laminated bodies are aligned, a roller is applied from the top of an object to be cut configured from the aligned laminated bodies when the elevation of the center of the object to be cut becomes high to vent air existing between the objects to be cut and in the laminated bodies, and the adhesive is eventually hardened to mutually bond the laminated bodies. In particular, this invention provides a carrier-attached copper foil to be used upon producing a laminated plate, and aims to realize the improvement in the handling ability in the production process of a printed board and cost reduction based on an improved production yield. | 10-27-2011 |
| 20110259848 | Rolled Copper Foil or Electrolytic Copper Foil for Electronic Circuit, and Method of Forming Electronic Circuit Using Same - Provided is a rolled copper foil or electrolytic copper foil for an electronic circuit to be used for forming a circuit by etching, wherein the rolled copper foil or the electrolytic copper foil comprises a nickel alloy layer with lower etching rate than copper, which is formed on an etching side of the copper foil, and the nickel alloy layer contains zinc. This invention aims to prevent sagging caused by the etching, to form a uniform circuit having the intended circuit width, and to shorten the time of forming a circuit by etching as much as possible, when forming a circuit by etching a copper foil of the copper-clad laminate; and also aims to make the thickness of the nickel alloy layer as thin as possible, to inhibit oxidation when exposed to heat, to prevent tarnish (discoloration) known as “YAKE”, to improve the etching properties in pattern etching, and to prevent the occurrence of short circuits and defects in the circuit width. | 10-27-2011 |
| 20110250468 | Metal Foil with Carrier - Provided is a metal foil with a carrier as a laminated body in which a carrier A and a metal foil B are placed alternately, wherein the metal foil with a carrier comprises a structure where the adjoining carrier A has an area which covers the entire surface of the metal foil B, and the edge of the carrier A protrudes partially or entirely from the metal foil B. The copper foil with a carrier is used for producing a single-sided laminated plate or a multilayer laminated plate of two or more layers or an ultrathin coreless substrate for use in a printed wiring board. In particular, this copper foil with a carrier is used for producing a laminated plate, and its objective is to improve the handling performance in the production process of a printed board and reduce costs by increasing the yield. | 10-13-2011 |
| 20110247930 | Nonmagnetic Material Particle-Dispersed Ferromagnetic Material Sputtering Target - A nonmagnetic material particle-dispersed ferromagnetic material sputtering target comprising a mixture of an alloy containing 5 mol % or more and 20 mol % or less of Cr, 5 mol % or more and 30 mol % or less of Pt, and Co as the remainder thereof, and nonmagnetic material particles, wherein the structure of the target includes a phase (A) in which the nonmagnetic material particles are uniformly micro-dispersed in the alloy, and a spherical alloy phase (B) dispersed in the phase (A) in which the ratio of its volume in the target is 4% or more and 40% or less. Obtained is a nonmagnetic material particle-dispersed ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device, and which has high density and generates few particles during sputtering. | 10-13-2011 |
| 20110244260 | Cu-Ni-Si-Co COPPER ALLOYS FOR ELECTRONIC MATERIALS AND MANUFACTURING METHODS THEREOF - Provided is a Cu—Ni—Si—Co based copper alloy with which high levels of strength and conductivity are achieved, and that also has excellent permanent fatigue resistance. The copper alloy for electronic materials contains Ni: 1.0-2.5 mass %, Co: 0.5-2.5 mass %, and Si: 0.3-12 mass %, and the remainder comprises Cu and unavoidable impurities. Of the second phase particles precipitated in the matrix, the number density of those having a particle diameter of 5-50 nm is 1×10 | 10-06-2011 |
| 20110244255 | Metal Foil with Carrier - Provided is a metal foil with a carrier as a laminated body in which a carrier A and a metal foil B are placed alternately, wherein the carrier A and the metal foil B respectively have a glossy surface, so-called ‘S surface’, and the said surfaces are laminated to face each other. The present invention relates to a copper foil with a carrier which is used for producing a single-sided laminated plate or a multilayer laminated plate of two or more layers for use in a printed wiring board. In particular, this copper foil with a carrier is used for producing a laminated plate, and its objective is to improve the handling performance during the production process of a printed board and reduce costs by increasing the yield. | 10-06-2011 |
| 20110243817 | Zirconium Crucible - Provided is a zirconium crucible for analytical use, wherein the purity excluding gas components is 3N or higher and the content of oxygen as a gas component is 500 mass ppm or less. In light of the recent analytical technology for which a fast and accurate measurement of high-purity materials is required; an object of the present invention is to inhibit the incorporation of impurities from a crucible by using a high-purity crucible, and provide a zirconium crucible for analytical use, wherein a two-stage separation/decomposition process is not required in the analysis of samples in which various types of oxides and metals such as sludge, bottom sediment samples and soil coexist, and the number of times that the crucible can be used is increased by improving the durability of high-purity zirconium metal. | 10-06-2011 |
| 20110240182 | Ni-Si-Co COPPER ALLOY AND MANUFACTURING METHOD THEREFOR - Disclosed is a Ni—Si—Co copper alloy that is suitable for use for various kinds of electronic parts and has particularly good uniform plating adhesion properties. The copper alloy for electronic materials comprises Ni: 1.0-2.5 mass %, Co: 0.5-2.5 mass % and Si: 0.3-1.2 mass % and the remainder is made of Cu and unavoidable impurities. For the copper alloy for electronic materials, the mean crystal size, at the plate thickness center, is 20 μm or less, and there are five or fewer crystal particles that contact the surface and have a long axis of 45 μm or greater per 1 mm rolling direction length. The copper alloy may comprise a maximum of 0.5 mass % Cr and may comprise a maximum in total of 2.0 mass % of one, two or more selected from a group comprising Mg, P, As, Sb, Be, B, Mn, Sn, Ti, Zr, Al, Fe, Zn and Ag. | 10-06-2011 |
| 20110236714 | Metal Foil with Electric Resistance Film and Method of Producing the Same - A copper foil with an electric resistance film in which a film with higher electrical resistivity than the metal foil is provided on the metal foil, wherein a plurality of electric resistance films with different electric resistance is arranged in parallel on the same metal foil. With conventionally used built-in resistor elements, one resistor element is configured of one type of substance on the copper foil. Nevertheless, when actually mounting the resistor elements, the circuit design tolerance can be increased and the number of man-hours can be reduced with two resistor elements and further with a plurality of resistor elements compared to a case with one resistor element. This invention aims to provide a metal foil with a built-in resistor element comprising two or more types of resistor elements on one metal foil. | 09-29-2011 |
| 20110233320 | METHOD OF WINDING UP COPPER FOIL OR COPPER CLAD LAMINATE - Two pieces of narrow double-sided adhesive tapes each having a length that is equal to or slightly longer than the width of a material to be wound up and one piece of a wide adhesive backup tape having a length that is longer than the width of the foregoing double-sided adhesive tape and the material to be wound up are prepared in a method of winding up the material to be wound up. The first and second double-sided adhesive tapes are affixed, parallel to the axis of a core tube, onto a surface of the core tube with a gap provided therebetween. Subsequently, the material to be wound up is affixed with the first double-sided adhesive tape as the starting end, the core tube is rotated, and, upon reaching a position where the second double-sided adhesive tape is present, the material to be wound is affixed to the second double-sided adhesive tape. After the wide adhesive backup tape having a length that is longer than the width of the material to be wound is affixed to the core tube on top of the first and second double-sided adhesive tapes and the material to be wound up wrapped therearound, the winding-up operation is continued. Consequently, the occurrence of wrinkles and puckers can be inhibited during the winding-up operation and the winding collapse can be prevented by increasing the winding tension. | 09-29-2011 |
| 20110229385 | METHOD OF LEACHING COPPER SULFIDE ORE - A method of leaching copper sulfide ore includes leaching copper from copper sulfide ore using a sulfuric acid solution comprising iodide ion and iron (III) ion surplus to the iodide ion as a leaching solution; reducing iodine in a solution obtained after the leaching step to less than 1 mg/L by an activated carbon treatment; and oxidizing iron (II) ion or newly added iron (II) ion in a solution obtained after the iodine reduction step by using iron oxidizing microbes to recover iron (III) ion. | 09-22-2011 |
| 20110163447 | High-Purity Copper or High-Purity Copper Alloy Sputtering Target, Process for Manufacturing the Sputtering Target, and High-Purity Copper or High-Purity Copper Alloy Sputtered Film - Provided is a high-purity copper or high-purity copper alloy sputtering target of which the purity is 6N or higher and in which the content of the respective components of P, S, O and C is 1 ppm or less, wherein the number of nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less is 30,000 inclusions/g or less. As a result of using high-purity copper or high-purity copper alloy from which harmful inclusions of P, S, C and O system have been reduced as the raw material and controlling the existence form of nonmetal inclusions, the present invention addresses a reduction in the percent defect of wirings of semiconductor device formed by sputtering a high-purity copper target so as to ensure favorable repeatability. | 07-07-2011 |
| 20110163279 | OXIDE SINTERED COMPACT FOR PRODUCING TRANSPARENT CONDUCTIVE FILM - The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element. | 07-07-2011 |
| 20110162971 | Sputtering Target and Process for Producing Same - A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target. Provided are a sputtering target capable of improving the target surface in which numerous substances without ductility exist and preventing or inhibiting the generation of nodules and particles during sputtering, and a method of producing such a sputtering | 07-07-2011 |
| 20110162322 | Method for Storing Target Comprising Rare Earth Metal or Oxide Thereof - Provided is a method for storing a target comprising a rare earth metal or oxide thereof, wherein oxide of the same rare earth metal as the material of the rare earth metal or its oxide target to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the target is stored by sealing the storage container or the film-type seal. This invention aims to provide technology for enabling the long-term storage of a target by devising the method for storing a target comprising a rare earth metal or oxide thereof, and thereby inhibiting the pulverization of the target caused by the oxidation and hydroxylation of such target due to the ingress of air. | 07-07-2011 |
| 20110158885 | HIGH PURITY CRYSTALLINE SILICON, HIGH PURITY SILICON TETRACHLORIDE AND PROCESSES FOR PRODUCING THE SAME - An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C., whereby crude crystalline silicon is formed at a chip part of a silicon tetrachloride gas-supplying nozzle, and the crude crystalline silicon is grown downward from the chip part of the silicon tetrachloride gas-supplying nozzle; the grown crude crystalline silicon is discharged to an outside of the reactor, and the discharged crude crystalline silicon is subjected to acid treatment. | 06-30-2011 |
| 20110155570 | Barrier Film for Semiconductor Wiring, Sintered Compact Sputtering Target and Method of Producing the Sputtering Target - Provided are a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30 unit: atomic percent), and a sintered compact sputtering target for forming a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30, unit: atomic percent), and comprising a target structure configured from a W matrix and Ni particles existing therein and in which W is diffused in the Ni particles. The present invention aims to provide a sputtering target that is particularly effective for use in forming a barrier film in which the target itself has the same composition as the barrier film without depending on the nitriding reaction in the sputtering process, which is capable of effectively preventing the reaction of a semiconductor device, which is free from the generation of particles in the sputtering process, and which yields superior characteristics upon forming the barrier film, as well as a method of producing such a target. | 06-30-2011 |
| 20110142742 | METHOD FOR PURIFICATION OF SILICON TETRACHLORIDE - An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption. | 06-16-2011 |
| 20110135942 | Nickel Alloy Sputtering Target and Nickel Silicide Film - Provided are a nickel alloy sputtering target, and a nickel silicide film formed with such a target, enabling the formation of a thermally stable silicide (NiSi) film, scarcely causing the aggregation of films or excessive formation of silicides, having low generation of particles upon forming the sputtered film, having favorable uniformity and superior plastic workability to the target, and which is particularly effective for the manufacture of a gate electrode material (thin film). This nickel alloy sputtering target contains 22 to 46 wt % of platinum and 5 to 100 wtppm of one or more components selected from iridium, palladium, and ruthenium, and remainder is nickel and inevitable impurities. | 06-09-2011 |
| 20110132757 | Sputtering Target with Few Surface Defects, and Surface Processing Method Thereof - A sputtering target and surface processing method is provided. Intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in the target surface in a highly ductile matrix phase at a volume ratio of 1 to 50%. The target surface is preliminarily subjected to primary processing of cutting work, and then subsequently subjected to finish processing via polishing. The sputtering target subject to this surface processing has an improved target surface with numerous substances without ductility and prevents or suppresses the generation of nodules and particles upon sputtering. | 06-09-2011 |
| 20110123795 | Hybrid Silicon Wafer and Method for Manufacturing Same - Provided is a hybrid silicon wafer comprising a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer. Also provided is a method for manufacturing a hybrid silicon wafer having a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer, wherein a part of the sintered polysilicon is hollowed, a single crystal ingot is inserted into the hollowed portion, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon and the single-crystal silicon ingot, and the complex is sliced. Thereby provided are a hybrid silicon wafer comprising functions of both the polysilicon wafer and the single-crystal wafer, and a method for manufacturing such a hybrid silicon wafer. | 05-26-2011 |
| 20110123389 | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis - High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, 0-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility. | 05-26-2011 |
| 20110114879 | Method of Producing Mixed Powder Comprising Noble Metal Powder and Oxide Powder, and Mixed Powder Comprising Noble Metal Powder and Oxide Powder - Provided are a method of producing mixed powder comprising noble metal powder and oxide powder, wherein powder of ammonium chloride salt of noble metal and oxide powder are mixed, the mixed powder is subsequently roasted, and ammonium chloride is desorbed by the roasting process in order to obtain mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder, wherein chlorine is less than 1000 ppm, nitrogen is less than 1000 ppm, 90% or more of the grain size of the noble metal powder is 20 μm or less, and 90% or more of the grain size of the oxide powder is 12 μm or less. Redundant processes in the production of noble metal powder are eliminated, and processes are omitted so that the inclusion of chlorine contained in the royal water and nitrogen responsible for hydrazine reduction reaction is eliminated as much as possible. Consequently, the present invention aims to omit the drying process at a high temperature and thereby prevent grain growth and aggregation, and further eliminate the pulverization and classification processes in order to considerably reduce the production cost. | 05-19-2011 |
| 20110114482 | Oxide Sintered Compact, Sputtering Target Composed of the Sintered Compact, and Method of Producing the Sintered Compact and the Sintered Compact Sputtering Target - An oxide sintered compact composed of a composite oxide of lanthanum and hafnium, wherein the amount of hafnium contained in the sintered compact is equivalent or more relative to the lanthanum. A method of producing an oxide sintered compact of lanthanum and hafnium, wherein La | 05-19-2011 |
| 20110114481 | Lanthanum Oxide-based Sintered Compact, Sputtering Target Composed of said Sintered Compact, Method of Producing Lanthanum Oxide-based Sintered Compact, and Method of Producing Sputtering Target based on said Production Method - A lanthanum oxide-based sintered compact having lanthanum oxide as a basic component, wherein the sintered compact contains one or more of titanium oxide, zirconium oxide and hafnium oxide with the remainder being lanthanum oxide and unavoidable impurities. A method of producing a lanthanum oxide-based sintered compact, wherein La | 05-19-2011 |
| 20110094879 | Tungsten Sintered Sputtering Target - Provided is a tungsten sintered sputtering target, wherein the phosphorus content is 1 wtppm or less and the remainder is other unavoidable impurities and tungsten. The inclusion of phosphorus heavily affects the abnormal grain growth of tungsten and the deterioration in the target strength. In particular, if phosphorus is contained in an amount exceeding 1 ppm, crystal grains subject to abnormal grain growth will exist in the tungsten target. Thus, the object is to prevent the abnormal grain growth of tungsten and improve the product yield of the target by strongly recognizing the phosphorus contained in the tungsten as a harmful impurity and controlling the inclusion thereof to be as low as possible. | 04-28-2011 |
| 20110072936 | METHOD FOR SEPARATING AND RECOVERING NICKEL AND LITHIUM - A method for extracting nickel and lithium includes solvent extraction step of using three or more extraction stages to subject a solution containing lithium and nickel to solvent extraction with 2-Ethylhexyl phosphonic acid mono-2-ethylhexyl ester at a pH of 8.0 to 8.5, whereby the nickel and the lithium are co-extracted into a resultant organic phase. | 03-31-2011 |
| 20110068014 | Ni-Pt Alloy and Target Comprising the Same - A Ni—Pt alloy and target superior in workability containing 0.1 to 20 wt % Pt and having a Vickers hardness of 40 to 90. A method of manufacturing the Ni—Pt alloy comprises steps of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, neutralizing the electrolytically leached solution with ammonia, removing impurities through filtration with activated carbon, blowing carbon dioxide into the resultant solution to form nickel carbonate, exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, leaching a raw material Pt having a purity of 3N level with acid, subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and dissolving the resultant high purity Ni powder and high purity electrodeposited Pt. The method enables rolling of the Ni—Pt alloy ingot upon reducing the hardness thereof, which results in the stable and efficient manufacture of a rolled target. | 03-24-2011 |
| 20110065002 | Positive Electrode Active Material for Lithium Ion Battery, Positive Electrode for Secondary Battery using said Positive Electrode Active Material, and Lithium Ion Secondary Battery using Secondary Battery Positive Electrode - Provided is a positive electrode active material for a lithium ion battery, wherein the oil absorption of NMP (N-methylpyrrolidone) measured with a method that is compliant with JIS K5101-13-1 is 30 mL or more and 50 mL or less per 100 g of powder, and wherein [the positive electrode active material] is represented with Li | 03-17-2011 |
| 20110048935 | Sputtering Target with Low Generation of Particles - Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 μm or less, a ten-point average roughness Rz is 0.4 μm or less, a distance between local peaks (roughness motif) AR is 120 μm or less, and an average length of waviness motif AW is 1500 μm or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof. | 03-03-2011 |
| 20110044838 | Iron Silicide Sputtering Target and Method for Production Thereof - An iron silicide sputtering target in which the oxygen as a gas component in the target is 1000 ppm or less and a method of manufacturing such an iron silicide sputtering target are provided. The method includes the steps of melting/casting high purity iron and silicon under high vacuum to prepare an alloy ingot, subjecting the ingot to gas atomization with inert gas to prepare fine powder, and thereafter sintering the fine powder. The amount of impurities in the target will be reduced, the thickness of a βFeSi | 02-24-2011 |
| 20110036710 | Ge-Cr Alloy Sputtering Target - A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 μm or less, and Ge powder having a minus sieve of 250 μm or less and having a BET specific surface area of 0.4 m | 02-17-2011 |
| 20110033369 | High Purity Copper Sulfate and Method for Production Thereof - High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less is provided. A method for producing such high purity copper sulfate includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration. | 02-10-2011 |
| 20110031437 | Positive Electrode Active Material for Lithium Ion Battery, Positive Electrode for Secondary Battery, and Lithium Ion Battery - Provided is a positive electrode active material for a lithium ion battery positive electrode material made of lithium-containing nickel-manganese-cobalt composite oxide of a layered structure represented with LiaNixMnyCozO | 02-10-2011 |
| 20110027122 | Cu-Ni-Si-Co-Cr System Alloy for Electronic Materials - The problem to be solved by the present invention is to provide a significant improvement in the properties in Cu—Ni—Co—Si alloy by adding Cr, i.e., to provide Corson alloys having high strength and high electrical conductivity. There is provided a copper alloy for electronic materials comprising 1.0 to 4.5 mass % of Ni, 0.50 to 1.2 mass % of Si, 0.1 to 2.5 mass % of Co, 0.003 to 0.3 mass % of Cr, with the balance being Cu and unavoidable impurities, the mass concentration ratio of the total mass of Ni and Co to Si ([Ni+Co]/Si ratio) satisfies the formula: 4≦[Ni+Co]/Si≦5, and with regard to Cr—Si compound whose size is 0.1 to 5 μm dispersed in the material, atomic concentration ratio of Cr to Si in the dispersed particle is 1-5, and area dispersion density thereof is more than 1×10 | 02-03-2011 |
| 20110017590 | Sintered Compact Target and Method of Producing Sintered Compact - Disclosed is a sintered compact target containing an element (A) and an element (B) below, wherein the sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm | 01-27-2011 |
