JORDAN VALLEY SEMICONDUCTORS LTD. Patent applications |
Patent application number | Title | Published |
20140286473 | ESTIMATION OF XRF INTENSITY FROM AN ARRAY OF MICRO-BUMPS - A method for inspection includes capturing an optical image of one or more features on a surface of a sample and irradiating an area of the sample containing at least one of the features with an X-ray beam. An intensity of X-ray fluorescence emitted from the sample in response to the irradiating X-ray beam is measured. The optical image is processed so as to extract geometrical parameters of the at least one of the features and to compute a correction factor responsively to the geometrical parameters. The correction factor is applied to the measured intensity in order to derive a property of the at least one of the features. | 09-25-2014 |
20130287178 | X-RAY BEAM CONDITIONING - An X-ray optical device includes a crystal containing a channel, which passes through the crystal and has multiple internal faces. A mount is configured to hold the crystal in a fixed location relative to a source of an X-ray beam and to shift the crystal automatically between two predefined dispositions: a first disposition in which the X-ray beam passes through the channel while diffracting from one or more of the internal faces, and a second disposition in which the X-ray beam passes through the channel without diffraction by the crystal. | 10-31-2013 |
20130089178 | X-ray inspection of bumps on a semiconductor substrate - A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap. | 04-11-2013 |
20130039471 | Detection of Wafer-Edge Defects - Apparatus for inspection of a disk, which includes a crystalline material and has first and second sides. The apparatus includes an X-ray source, which is configured to direct a beam of X-rays to impinge on an area of the first side of the disk. An X-ray detector is positioned to receive and form input images of the X-rays that are diffracted from the area of the first side of the disk in a reflective mode. A motion assembly is configured to rotate the disk relative to the X-ray source and detector so that the area scans over a circumferential path in proximity to an edge of the disk. A processor is configured to process the input images formed by the X-ray detector along the circumferential path so as to generate a composite output image indicative of defects along the edge of the disk. | 02-14-2013 |
20120281814 | High-Resolution X-Ray Diffraction Measurement with Enhanced Sensitivity - A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer. | 11-08-2012 |
20120275568 | Combining X-ray and VUV Analysis of Thin Film Layers - Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample. | 11-01-2012 |
20120182542 | Optical Vacuum Ultra-Violet Wavelength Nanoimprint Metrology - An optical metrology apparatus for measuring nanoimprint structures using Vacuum Ultra-Violet (VUV) light is described. | 07-19-2012 |
20120140889 | FAST MEASUREMENT OF X-RAY DIFFRACTION FROM TILTED LAYERS - A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer. | 06-07-2012 |
20120014508 | ENHANCING ACCURACY OF FAST HIGH-RESOLUTION X-RAY DIFFRACTOMETRY - A method for analysis includes directing a converging beam of X-rays toward a surface of a sample and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum of the sample. The diffraction spectrum is corrected to compensate for a non-uniform property of the converging beam. | 01-19-2012 |
20110164730 | High-Resolution X-Ray Diffraction Measurement with Enhanced Sensitivity - A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer. | 07-07-2011 |
20100328648 | BROAD BAND REFERENCING REFLECTOMETER - A spectroscopy system is provided which is optimized for operation in the VUV region and capable of performing well in the DUV-NIR region. Additionally, the system incorporates an optical module which presents selectable sources and detectors optimized for use in the VUV and DUV-NIR. As well, the optical module provides common delivery and collection optics to enable measurements in both spectral regions to be collected using similar spot properties. The module also provides a means of quickly referencing measured data so as to ensure that highly repeatable results are achieved. The module further provides a controlled environment between the VUV source, sample chamber and VUV detector which acts to limit in a repeatable manner the absorption of VUV photons. The use of broad band data sets which encompass VUV wavelengths, in addition to the DUV-NIR wavelengths enables a greater variety of materials to be meaningfully characterized. Array based detection instrumentation may be exploited to permit the simultaneous collection of larger wavelength regions. | 12-30-2010 |
20100301225 | Method and Apparatus for Accurate Calibration of VUV Reflectometer - A calibration technique is provided that utilizes a standard sample that allows for calibration in the wavelengths of interest even when the standard sample may exhibit significant reflectance variations at those wavelengths for subtle variations in the properties of the standard sample. A second sample, a reference sample may have a relatively featureless reflectance spectrum over the same spectral region and is used in combination with the calibration sample to achieve the calibration. In one embodiment the spectral region may include the VUV spectral region. | 12-02-2010 |
20100290033 | Method and System for Using Reflectometry Below Deep Ultra-Violet (DUV) Wavelengths for Measuring Properties of Diffracting or Scattering Structures on Substrate Work Pieces - A method and apparatus is disclosed for using below deep ultra-violet (DUV) wavelength reflectometry for measuring properties of diffracting and/or scattering structures on semiconductor work-pieces is disclosed. The system can use polarized light in any incidence configuration, but one technique disclosed herein advantageously uses un-polarized light in a normal incidence configuration. The system thus provides enhanced optical measurement capabilities using below deep ultra-violet (DUV) radiation, while maintaining a small optical module that is easily integrated into other process tools. A further refinement utilizes an r-θ stage to further reduce the footprint. | 11-18-2010 |
20100277741 | COMBINED OPTICAL METROLOGY TECHNIQUES - A method and apparatus is disclosed for using below deep ultra-violet (DUV) wavelength reflectometry for measuring properties of diffracting and/or scattering structures on semiconductor work-pieces is disclosed. The system can use polarized light in any incidence configuration, but one technique disclosed herein advantageously uses un-polarized light in a normal incidence configuration. The system thus provides enhanced optical measurement capabilities using below deep ultra-violet (DUV) radiation, while maintaining a small optical module that is easily integrated into other process tools. A further refinement utilizes an r-θ stage to further reduce the footprint. | 11-04-2010 |
20090074141 | Automated selection of x-ray reflectometry measurement locations - A computer-implemented method for inspection of a sample includes defining a plurality of locations on a surface of the sample, irradiating the surface at each of the locations with a beam of X-rays, and measuring an angular distribution of the X-rays that are emitted from the surface responsively to the beam, so as to produce a respective plurality of X-ray spectra. The X-ray spectra are analyzed to produce respective figures-of-merit indicative of a measurement quality of the X-ray spectra at the respective locations. One or more locations are selected out of the plurality of locations responsively to the figures-of-merit, and a property of the sample is estimated using the X-ray spectra measured at the selected locations. | 03-19-2009 |
20090074137 | ACCURATE MEASUREMENT OF LAYER DIMENSIONS USING XRF - A method for inspection of a sample includes directing an excitation beam to impinge on an area of a planar sample that includes a feature having sidewalls perpendicular to a plane of the sample, the sidewalls having a thin film thereon. An intensity of X-ray fluorescence (XRF) emitted from the sample responsively to the excitation beam is measured, and a thickness of the thin film on the sidewalls is assessed based on the intensity. In another method, the width of recesses in a surface layer of a sample and the thickness of a material deposited in the recesses after polishing are assessed using XRF. | 03-19-2009 |