| Jian Zhong Yuan Patent applications |
| Patent application number | Title | Published |
|---|
| 20100129996 | SILICON MATERIAL SURFACE ETCHING FOR LARGE GRAIN POLYSILICON THIN FILM DEPOSITION AND STRUCTURE - A method of surface treatment for silicon material. The method includes providing a first silicon material having a surface region. The first silicon material has a first purity characteristics and a first surface roughness characteristics. A chemical polishing process is perform to the surface region to cause the surface region to have a second roughness characteristics. Thereafter, a chemical leaching process is performed to the surface region to cause the first silicon material in a depth within a vicinity of the surface region to have a second purity characteristics. A polysilicon material characterized by a grain size greater than about 0.1 mm is formed using a deposition process overlying the surface region. | 05-27-2010 |
| 20100126576 | SILICON MATERIAL SURFACE ETCHING FOR LARGE POLYSILICON THIN FILM DEPOSITION AND STRACTURE - A method for forming a photovoltaic cell. The method includes providing a first silicon material characterized by a resistivity less than about 0.5 ohm cm | 05-27-2010 |
| 20090272720 | METHOD AND HEATING DEVICE FOR FORMING LARGE GRAIN SIZE SILICON MATERIAL STRUCTURE FOR PHOTOVOLTAIC DEVICES - A method for forming polysilicon material for photovoltaic cells. A first silicon material characterized by a first purity level is provided. The first silicon material is subjected to a thermal process to transform the first silicon material to a molten state confined in a first spatial volume. The molten first silicon material is subjected to a directional cooling process provided in a second spatial volume for a predetermined period, removing thermal energy from a first region. A polycrystalline silicon material characterized by a second purity level and an average grain size greater than about 0.1 mm is formed from the molten first silicon material in a vicinity of the first region. One or more silicon wafers is formed from the polycrystalline silicon material. A polysilicon film material characterized by a grain size greater than about 0.1 mm is deposited overlying each of the silicon wafers. | 11-05-2009 |
