| JENN FENG NEW ENERGY CO., LTD. Patent applications |
| Patent application number | Title | Published |
|---|
| 20110292664 | ANGLE ADJUSTING MECHANISM FOR STREETLAMP - An angle adjusting mechanism for a streetlamp includes a housing connected with a lamp, and an angle positioning board and a lamppost sleeve installed in the housing. The angle positioning board has a first positioning hole and a plurality of second positioning holes. The lamppost sleeve has a first positioning tube and a second positioning tube. Through pre-arranging corresponding angles of the angle positioning board and the lamppost sleeve, the illumination angle of the lamp is capable of being adjusted. Moreover, the lamppost sleeve and the angle positioning board are fastened by screws, so the illumination angle of the lamp and the housing can be rapidly adjusted through loosening or fastening the screws. | 12-01-2011 |
| 20110252853 | METHOD AND APPARATUS FOR COMPACTING A CIGS THIN FILM IN A NON-VACUUM ENVIRONMENT - A method and an apparatus for compacting a CIGS thin film in a non-vacuum environment are provided. According to the present invention, a substrate having a CIGS light absorbing layer configured thereon is processed with a soft baking process. Then, a pneumatic cylinder is employed for providing a pressure for driving a roller which is fixed to a holder. The holder is connected to the pneumatic cylinder. The roller is driven to downwardly apply a pressing force onto the CIGS light absorbing layer. The substrate is then moved back and forth to compact the CIGS light absorbing layer uniformly. | 10-20-2011 |
| 20110215281 | METHOD FOR PREPARING CIGS INKS WITHOUT SURFACTANT - A method for preparing a CIGS ink without a surfactant or a binder is provided. In accordance with the method of the present invention, an initial CIGS mixture powder is obtained by mixing two component powder, three component powder or four component powder of copper, indium, gallium, and selenium in predetermined proportions. Then additional selenide powder is added and mixed into the initial CIGS mixture powder to form a final CIGS mixture powder. Then, a certain proportion of solvent is added into the final CIGS mixture powder, and the mixture powder is then stirred to obtain a CIGS ink in a predetermined copper/indium/gallium/selenium ratio as desired. | 09-08-2011 |
| 20110189813 | METHOD FOR FABRICATING COPPER/INDIUM/GALLIUM/SELENIUM SOLAR CELL BY WET PROCESS UNDER NON-VACUUM CONDITION - A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided. In the method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition, a substrate having a backside electrode layer is provided, and then a first transparent conduction oxide (TCO) layer, a copper/indium/gallium/selenium layer and a cadmium sulfide layer, a zinc oxide layer, and a second TCO layer are sequentially formed on the backside electrode layer by using a first TCO layer forming process, a copper/indium/gallium/selenium layer and a cadmium sulfide layer forming process, a zinc oxide layer forming process, and a second TCO layer forming process to form the copper/indium/gallium/selenium solar cell with a high conversion efficiency, wherein the first TCO layer forming process, the zinc oxide layer forming process, and the second TCO layer forming process respectively comprise a laser cutting process to individually perform laser cutting and scraping knife cutting for the work piece such that the segmented work pieces are formed for increasing the integration of process and the quality of production. | 08-04-2011 |
| 20110111129 | METHOD FOR FABRICATING CADMIUM SULFIDE THIN FILM - A method for fabricating a cadmium sulfide thin film, in which the chemical bath including the sulfur-containing compounds and the cadmium-containing compounds is adjusted to alkaline by adding aqueous ammonia, followed by adding the buffer salts while stirring and heating, and then the glass substrate is immersed in the chemical bath such that when the immersing time is increased, the thickness of cadmium sulfide thin film will be increased, and the cadmium sulfide thin film obtained does not have a dual structure, and thereby the obtained cadmium sulfide thin film can have excellent adhesion to the glass substrate, and thereby the quality of cadmium sulfide thin film can be improved. | 05-12-2011 |
| 20110073688 | METHOD FOR FABRICATING CIGS NANOPARTICLES - A wet ball mill method for fabricating copper/indium/gallium/selenium (CIGS) nanoparticles, comprising an individual milling process, a homogeneously mixing process, a primary milling process, and an advanced milling process, wherein in the individual milling process, the individual particles or compound particles including copper, indium, gallium and/or selenium are milled to the individual milled materials with a particle size 500 nm to 600 nm; in the homogeneously mixing process, the individual milled materials are mixed to a mixed homogenate; in the primary milling process, the mixed homogenate is milled to the primary milled materials with particle size 100 nm to 200 nm; and in the advanced milling process, the primary milled materials are milled to the advanced milled materials with particle size less than 50 nm which are the CIGS nanoparticles for fabricating the absorption layer of CIGS solar cell. | 03-31-2011 |
