IWATANI CORPORATION Patent applications |
Patent application number | Title | Published |
20150075516 | CARTRIDGE-TYPE GAS GRILL - A structure which performs safety operation with certainty when a gas container is replaced or when an abnormality occurs and is easy to used is provided. A cartridge-type gas grill 11 having a plurality of systems includes two gas container accommodation sections 12; two burners 13; and gas flow paths for connecting the gas container accommodation sections 12 and the burners 13 in a one-to-one relationship. All the gas container accommodation sections 12 are each provided with a container attachment switch 19 for detecting that a gas container 15 is connected. Open/close valves 18, provided in the gas flow paths, for adjusting a gas flow are each formed of an electromagnetic valve. Operation knobs 63 each for making an operation on the corresponding open/close valve 18 are each provided with an ignition switch 20, which is turned ON when the corresponding open/close valve 18 is opened and is turned OFF when the corresponding open/close valve 18 is closed. The container attachment switches 19, the open/close valves 18, and the ignition switches 20 are electronically controlled. For an ignition process, the ignition switches are validated under the condition that all the container attachment switches 19 are ON. For a recovery process, all the ignition switches 19 need to be turned OFF. | 03-19-2015 |
20150041430 | METHOD FOR TREATING INNER SURFACE OF CHLORINE TRIFLUORIDE SUPPLY PASSAGE IN APPARATUS USING CHLORINE TRIFLUORIDE - Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF | 02-12-2015 |
20140061031 | PROCESSING METHOD UTILIZING CLUSTER - A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture. | 03-06-2014 |
20130340893 | COMBUSTIBLE GAS - Combustible gas, which is easy to be stored, transported and the like and can contribute to improving the quality of a finished state of an operation such as gas cutting, gas welding or brazing, contains ethylene at 38 v/v % or more and 45 v/v % or less and the remainder being hydrogen and unavoidable impurity. | 12-26-2013 |
20130079269 | METHOD FOR PRODUCING HIGH CONCENTRATION OZONATED WATER AND DEVICE FOR PRODUCING HIGH CONCENTRATION OZONATED WATER - The disclosed device and method produce high concentration ozonated water by connecting a high concentration ozone gas-supplying system that comprises an ozone gas-generating unit ( | 03-28-2013 |
20130061750 | METHOD AND APPARATUS FOR CONCENTRATING OZONE GAS - A method of concentrating ozone gas including: causing ozone gas contained in ozone-oxygen mixture gas to be selectively adsorbed to adsorbents which are filled in a non-cooled state in at least two adsorbing cylinders arranged parallel to one another; desorbing the ozone gas from the adsorbents by subjecting a depressurizing process to each adsorbing cylinder during an ozone gas desorption operation; repeating an adsorption step and a desorption step alternately in the at least two adsorbing cylinders; and controlling the adsorbing cylinders, in such a way that one of the adsorbing cylinders is performing the adsorption step while another one of the adsorbing cylinders is performing the desorption step. | 03-14-2013 |
20130056033 | SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING DEVICE - A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign material | 03-07-2013 |
20130056024 | SUBSTRATE CLEANING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS - A substrate cleaning method for cleaning a substrate on which a film is formed with a pattern in a vacuum-state processing chamber includes a preprocessing step where the film formed on the substrate on which the pattern has been formed by an etching process is cleaned by using a cleaning gas; and a consecutive step including an oxidation step where residues attached on a surface of the pattern are oxidized by using an oxidizing gas and a reduction step where the oxidized residues are reduced by using a reducing gas, which are consecutively carried out posterior to the preprocessing step. The gases used in the preprocessing step and the consecutive step are clustered by ejecting the gases into the processing chamber from a gas nozzle whose internal pressure P | 03-07-2013 |
20130040459 | SUBSTRATE WIRING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE - In a substrate wiring method, copper is embedded all the way to the lowest parts of a wiring pattern formed on a substrate. The method is used to wire a substrate in a processing chamber kept in a vacuum state, the substrate having a wiring pattern formed thereon. The method includes a preprocessing step in which the wiring pattern on the substrate is cleaned using a desired cleaning gas and an embedding step in which, after the preprocessing step, metal nanoparticles are embedded in the wiring pattern using a clustered metal gas. | 02-14-2013 |
20130008470 | SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD - A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered. | 01-10-2013 |
20130008286 | METHOD FOR PRODUCING NICKEL NANOPARTICLES - A method for producing nickel nanoparticles is described, including a first step of heating a mixture of a nickel carboxylate with 1-12 carbon atoms in its moiety excluding —COOH and a primary amine to obtain a complexed reaction solution with a nickel complex foiiiied therein, and a second step of heating the complexed reaction solution by a microwave to obtain a Ni-nanoparticle slurry. In the first step, the heating is preferably conducted at a temperature of 105-175° C. for 15 minutes or longer. In the second step, the heating is preferably conducted at a temperature of 180° C. or higher. | 01-10-2013 |
20120312334 | RESIST REMOVAL APPARATUS AND RESIST REMOVAL METHOD - A resist removal apparatus and method are effective in removing a resist without oxidizing the substrate material other than the resist. The resist removal apparatus, which removes resist from a wafer on which a resist film has been formed, includes a cluster spraying unit which sprays a wafer with clusters each of which is formed of a plurality of organic solvent molecules agglomerated together. | 12-13-2012 |
20120247670 | SUBSTRATE CLEANING APPARATUS AND VACUUM PROCESSING SYSTEM - A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules. | 10-04-2012 |
20120114832 | CALCIUM PHOSPHATE COMPLEX, AND METHOD FOR PRODUCTION THEREOF - Provided is a means for fixing calcium phosphate onto the surface of a metal by a treatment method which uses no acid and produces less residue. A method of producing a calcium phosphate composite in which calcium phosphate is bonded to the surface of a base material, the method including a surface treatment step of bringing the surface of the base material into contact with a surface treating agent, and then into contact with a silane coupling agent, to surface treat the base material; a polymerization step of initiating, after the surface treatment step, polymerization of the silane coupling agent by means of a polymerization initiator; and a bonding step of bonding the silane coupling agent at the surface of the base material after the polymerization step, with calcium phosphate; wherein the base material is a metal, and the surface treating agent is ozone water. | 05-10-2012 |
20110147896 | CLUSTER JET PROCESSING METHOD, SEMICONDUCTOR ELEMENT, MICROELECTROMECHANICAL ELEMENT, AND OPTICAL COMPONENT - A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room. | 06-23-2011 |
20110123430 | METHOD OF CONCENTRATING OZONE GAS AND APPARATUS THEREFOR - A method of concentrating ozone gas in which, although the apparatus configuration is simple, ozone gas of a predetermined concentration can be efficiently taken out, and an apparatus therefor are provided. In a method of concentrating ozone gas in which an ozone-oxygen mixture gas is acted in an adsorbing column that is filled with an adsorbent, to cause the adsorbent to selectively adsorb the ozone gas, and the selectively adsorbed ozone gas is desorbed, thereby concentrating and purifying the ozone gas, the ozone-oxygen mixture gas is acted on the adsorbent in a non-cooled state to cause the ozone gas to be selectively adsorbed to the adsorbent, the adsorbing column is vacuumed when performing an operation desorbing of the ozone gas, thereby desorbing the ozone gas from the adsorbent, and an initial amount of the leading out of the desorbed ozone gas is not recovered, thereby obtaining high-concentration ozone gas. | 05-26-2011 |
20100005961 | METHOD AND APPARATUS FOR CONDENSING OZONE GAS - The present invention provides a method and an apparatus for condensing ozone arranged so as to efficiently take out the ozone gas of a predetermined concentration, although its construction is simple. The method for condensing the ozone gas comprises acting ozone-oxygen mixture gas on an adsorbing cylinder which is filled in its interior area with an adsorbent so as to selectively adsorb the ozone gas to an adsorbent and desorbing the selectively adsorbed ozone gas so as to condense and purify the ozone gas. The method further includes acting the ozone-oxygen mixture gas on the adsorbent in non-cooled state to selectively adsorb the ozone gas to the adsorbent and vacuuming the adsorbing cylinder on performing desorption-operation of the ozone gas to desorb the ozone gas from the adsorbent. | 01-14-2010 |