| IPDIA Patent applications |
| Patent application number | Title | Published |
|---|
| 20100316911 | MULTILAYER STRUCTURE AND METHOD OF PRODUCING THE SAME - A multilayer structure, in particular a trench capacitor, is provided comprising a patterned layer structure comprising trenches, and a first electrode, wherein the patterned layer structure comprises a FASS-curve structure, and wherein at least parts of the first electrode are formed on the FASS-curve structure. | 12-16-2010 |
| 20100244189 | INTEGRATION SUBSTRATE WITH A ULTRA-HIGH-DENSITY CAPACITOR AND A THROUGH-SUBSTRATE VIA - An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. —The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously. | 09-30-2010 |
