| Interuniversitair Micro-Elecronica Centrum Patent applications |
| Patent application number | Title | Published |
|---|
| 20100276693 | FINFET FIELD EFFECT TRANSISTOR INSULATED FROM THE SUBSTRATE - A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate through a mask which is then subsequently used to form the thin fin portion of the channel. The channel of the finFET transistor is thus electrically insulated from the circuit substrate in the same manner as in MOS integrated circuits realized from bulk silicon substrates. | 11-04-2010 |
| 20090001463 | FINFET FIELD EFFECT TRANSISTOR INSULTATED FROM THE SUBSTRATE - A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate through a mask which is then subsequently used to form the thin fin portion of the channel. The channel of the finFET transistor is thus electrically insulated from the circuit substrate in the same manner as in MOS integrated circuits realized from bulk silicon substrates. | 01-01-2009 |
