| 20100035432 | CHEMICAL VAPOR DEPOSITION METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICES - A method of and system for chemical vapor deposition of layers of material on substrates for producing thin film semiconductor devices provides for continuous in-line processing. The method and system are adapted for size and potential speed, and for scaling to further increase the rate of production. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layer, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The chemical vapor for deposition at each region covers an area that is substantial for substrates, then, also having a substantial area. The chemical vapor may include an organometallic material, such as diethyl zinc vapor, or dimethyl zinc vapor, as well as a material that provides oxygen, such as water vapor or nitrous oxide gas. It may also include a material that provides a dopant. Thus, the layers of material may be a zinc oxide material. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor. The chemical vapor deposition head includes an emission and distribution face at the region for the head, and wall structure defining a first plenum layer having a first plenum and a second plenum layer having a second plenum, for receiving chemical materials from the supply apparatus and for maintaining separation of received chemical materials. The head also includes wall structure defining a third plenum layer having a first set of elongated plenums for receiving chemical material from the first plenum and distributing such chemical material to the emission and distribution face, and a second set of elongated plenums for receiving chemical material from the second plenum and distributing such chemical material to the emission and distribution face. One exemplary number of deposition regions is seven. | 02-11-2010 |
