| INTERNATIONAL RECTIFIER CORP. Patent applications |
| Patent application number | Title | Published |
|---|
| 20110248284 | SCHOTTKY DIODE WITH IMPROVED SURGE CAPABILITY - An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device. | 10-13-2011 |
| 20100230775 | TERMINATION FOR A SUPERJUNCTION DEVICE - A superjunction device that includes a termination region having a transition region adjacent the active region thereof, the transition region including a plurality of spaced columns. | 09-16-2010 |
