20150115459 | INTEGRATED CIRCUIT STRUCTURE WITH METAL CAP AND METHODS OF FABRICATION - The present disclosure generally provides for an integrated circuit (IC) structure with a TSV, and methods of manufacturing the IC structure and the TSV. An IC structure according to embodiments of the present invention may include a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end; and a metal cap contacting the axial end of the TSV, wherein the metal cap has a greater electrical resistivity than the TSV. | 04-30-2015 |