| International Busines Machines Corporation Patent applications |
| Patent application number | Title | Published |
|---|
| 20110087857 | AUTOMATIC PAGE PROMOTION AND DEMOTION IN MULTIPLE PAGE SIZE ENVIRONMENTS - Functionality can be implemented in a virtual memory manager (VMM) to allow small pages (e.g., 4 KB) to be coalesced into large pages (e.g., 64 KB), so that a single free list can be maintained for the large pages (“maintained pages”). When a process requests a small page, the VMM can associate a maintained page with a memory segment accessible by the process. Then, the maintained page can be divided to form a set of small pages (“fragments”). The fragments can become available pages in a broken page list. The VMM can satisfy the request by allocating one of the fragments in the broken page list. If the process requests additional small pages, the additional requests can be satisfied from the broken page list. When the process terminates, the fragments in the broken page list become a maintained page and can be returned to the free list. | 04-14-2011 |
| 20080276205 | COMPUTER PROGRAM PRODUCT FOR DESIGNING MEMORY CIRCUITS HAVING SINGLE-ENDED MEMORY CELLS WITH IMPROVED READ STABILITY - A memory cell for interconnection with READ and WRITE word lines and READ and WRITE bit lines includes a logical storage element such as a flip-flop formed by a first inverter and a second inverter cross-coupled to the first inverter. The storage element has first and second terminals and a storage element supply voltage terminal configured for interconnection with a first supply voltage. A WRITE access device is configured to selectively interconnect the first terminal to the WRITE bit line under control of the WRITE word line, and a pair of series READ access devices are configured to ground the READ bit line when the READ word line is active and the second terminal is at a high logical level. A logical “one” can be written to the storage element when a second supply voltage, greater than the first supply voltage, is applied to the WRITE word line, substantially without the use of a complementary WRITE bit line. | 11-06-2008 |
| 20080273374 | METHODS OF OPERATING AND DESIGNING MEMORY CIRCUITS HAVING SINGLE-ENDED MEMORY CELLS WITH IMPROVED READ STABILITY - A memory cell for interconnection with READ and WRITE word lines and READ and WRITE bit lines includes a logical storage element such as a flip-flop formed by a first inverter and a second inverter cross-coupled to the first inverter. The storage element has first and second terminals and a storage element supply voltage terminal configured for interconnection with a first supply voltage. A WRITE access device is configured to selectively interconnect the first terminal to the WRITE bit line under control of the WRITE word line, and a pair of series READ access devices are configured to ground the READ bit line when the READ word line is active and the second terminal is at a high logical level. A logical “one” can be written to the storage element when a second supply voltage, greater than the first supply voltage, is applied to the WRITE word line, substantially without the use of a complementary WRITE bit line. | 11-06-2008 |
