Intellectual Property Law

Patent application number	Title	Published
Intellectual Property Law Patent applications
20090323228	TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH IMPROVED FERROMAGNETIC UNDERLAYER FOR MgO TUNNELING BARRIER LAYER - A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (Co	12-31-2009
20090268353	CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE - A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL	10-29-2009