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Integrated Micro Sensors Inc.

Integrated Micro Sensors Inc. Patent applications
Patent application numberTitlePublished
20100157509High Temperature Boron Oxynitride Capacitor - A method for storing energy in a capacitor includes connecting a first conductor to a first electrode and a second conductor to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron oxynitride, BON. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode by means of the first and second conductors.06-24-2010