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INTEGRATED MAGNETOELECTRONICS CORP.

INTEGRATED MAGNETOELECTRONICS CORP. Patent applications
Patent application numberTitlePublished
20110211388HIGH GMR STRUCTURE WITH LOW DRIVE FIELDS - Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.09-01-2011
20110211387SCALABLE NONVOLATILE MEMORY - Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.09-01-2011
20080285331SCALABLE NONVOLATILE MEMORY - Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.11-20-2008