| INTEGRATED MAGNETOELECTRONICS CORP. Patent applications |
| Patent application number | Title | Published |
| 20110211388 | HIGH GMR STRUCTURE WITH LOW DRIVE FIELDS - Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic. | 09-01-2011 |
| 20110211387 | SCALABLE NONVOLATILE MEMORY - Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density. | 09-01-2011 |
| 20080285331 | SCALABLE NONVOLATILE MEMORY - Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density. | 11-20-2008 |